Order this document by MRF21125/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N – P C S / c e l l u l a r r a d i o a n d W L L applications. • Typical 2–carrier W–CDMA Performance for VDD = 28 Volts, IDQ = 1600 mA, f1 = 2.1125 GHz, f2 = 2.1225 GHz, Channel bandwidth = 3.84 MHz, adjacent channels at ± 5 MHz , ACPR and IM3 measured in 3.84 MHz bandwidth. Peak/Avg = 8.5 dB @ 0.01% probability on CCDF. Output Power — 20 Watts Efficiency — 18% Gain — 13 dB IM3 — –43 dBc ACPR — –45 dBc • 100% Tested under 2–carrier W–CDMA • Internally Matched, Controlled Q, for Ease of Use • High Gain, High Efficiency and High Linearity • Integrated ESD Protection • Designed for Maximum Gain and Insertion Phase Flatness • Capable of Handling 5:1 VSWR, @ 28 Vdc, 2170 MHz, 125 Watts (CW) Output Power • Excellent Thermal Stability • Characterized with Series Equivalent Large–Signal Impedance Parameters • Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. 2170 MHz, 125 W, 28 V LATERAL N–CHANNEL RF POWER MOSFETs CASE 465B–03, STYLE 1 (NI–880) (MRF21125) CASE 465C–02, STYLE 1 (NI–880S) (MRF21125S) MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDSS 65 Vdc Gate–Source Voltage VGS +15, –0.5 Vdc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 330 1.89 Watts W/°C Storage Temperature Range Tstg –65 to +150 °C Operating Junction Temperature TJ 200 °C ESD PROTECTION CHARACTERISTICS Test Conditions Class Human Body Model 2 (Minimum) Machine Model M3 (Minimum) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol Max Unit RθJC 0.53 °C/W NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 5 MOTOROLA RF DEVICE DATA Motorola, Inc. 2002 MRF21125 MRF21125S MRF21125SR3 1 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Symbol Min Typ Max Unit V(BR)DSS 65 — — Vdc Gate–Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 1 µAdc Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS — — 10 µAdc Forward Transconductance (VDS = 10 Vdc, ID = 3 Adc) gfs — 10.8 — S Gate Threshold Voltage (VDS = 10 V, ID = 300 µA) VGS(th) 2 — 4 Vdc Gate Quiescent Voltage (VDS = 28 V, ID = 1300 mA) VGS(Q) 2.5 3.9 4.5 Vdc Drain–Source On–Voltage (VGS = 10 V, ID = 1 A) VDS(on) — 0.12 — Vdc Crss — 5.4 — pF Characteristic OFF CHARACTERISTICS Drain–Source Breakdown Voltage (VGS = 0 Vdc, ID = 100 µAdc) ON CHARACTERISTICS DYNAMIC CHARACTERISTICS Reverse Transfer Capacitance (1) (VDS = 28 Vdc, VGS = 0, f = 1 MHz) FUNCTIONAL TESTS (In Motorola Test Fixture) 2–carrier W–CDMA, 3.84 MHz Channel Bandwidth, IM3 measured in 3.84 MHz Bandwidth. Peak/Avg = 8.5 dB @ 0.01% probability on CCDF. Common–Source Amplifier Power Gain (VDD = 28 Vdc, Pout = 20 W Avg, 2–carrier W–CDMA, IDQ = 1600 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz) Gps 12 13 — dB Drain Efficiency (VDD = 28 Vdc, Pout = 20 W Avg, 2–carrier W–CDMA, IDQ = 1600 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz) η 17 18 — % Third Order Intermodulation Distortion (VDD = 28 Vdc, Pout = 20 W Avg, 2–carrier W–CDMA, IDQ = 1600 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz; IM3 measured at f1 –15 MHz and f2 +15 MHz referenced to carrier channel power.) IM3 — –43 –40 dBc Adjacent Channel Power Ratio (VDD = 28 Vdc, Pout = 20 W Avg, 2–carrier W–CDMA, IDQ = 1600 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz; ACPR measured at f1 –10 MHz and f2 +10 MHz referenced to carrier channel power.) ACPR — –45 –40 dBc Input Return Loss (VDD = 28 Vdc, Pout = 20 W Avg, 2–carrier W–CDMA, IDQ = 1600 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz) IRL — –12 –9.0 dB Output Mismatch Stress (VDD = 28 Vdc, Pout = 125 W CW, IDQ = 1600 mA, f = 2170 MHz, VSWR = 5:1, All Phase Angles at Frequency of Test) Ψ No Degradation In Output Power Before and After Test (1) Part is internally matched both on input and output. MRF21125 MRF21125S MRF21125SR3 2 MOTOROLA RF DEVICE DATA ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Common–Source Amplifier Power Gain (VDD = 28 Vdc, Pout = 125 W PEP, IDQ = 1600 mA, f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz) Gps — 12 — dB Drain Efficiency (VDD = 28 Vdc, Pout = 125 W PEP, IDQ = 1600 mA, f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz) η — 34 — % Intermodulation Distortion (VDD = 28 Vdc, Pout = 125 W PEP, IDQ = 1600 mA, f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz) IMD — –30 — dBc Common–Source Amplifier Power Gain (VDD = 28 Vdc, Pout = 125 W CW, IDQ = 1600 mA, f1 = 2170.0 MHz) Gps — 11.5 — dB Drain Efficiency (VDD = 28 Vdc, Pout = 125 W CW, IDQ = 1600 mA, f = 2170.0 MHz) η — 46 — % TYPICAL TWO–TONE PERFORMANCE (In Motorola Test Fixture) TYPICAL CW PERFORMANCE MOTOROLA RF DEVICE DATA MRF21125 MRF21125S MRF21125SR3 3 Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 1.212″ x 0.082″ Microstrip 0.236″ x 0.082″ Microstrip 0.086″ x 0.254″ Microstrip 0.357″ x 0.082″ Microstrip 0.274″ x 1.030″ Microstrip 0.466″ x 0.050″ Microstrip 0.501″ x 0.050″ Microstrip 0.600″ x 1.056″ Microstrip Z9 Z10 Z11 Z12 Z13 Raw Board Material 0.179″ x 0.219″ Microstrip 0.100″ x 0.336″ Microstrip 0.534″ x 0.142″ Microstrip 0.089″ x 0.080″ Microstrip 0.620″ x 0.080″ Microstrip 0.030″ Glass Teflon, 2 oz Copper, 3″ x 5″ Dimensions, Arlon GX0300–55–22, εr = 2.55 Figure 1. MRF21125 Test Circuit Schematic Table 1. MRF21125 Test Circuit Component Designations and Values Designators Description B1 Ferrite Bead (Square), Fair Rite #2743019447 C1 9.1 pF Chip Capacitor, B Case, ATC #100B9R1CCA500X C2, C4, C11, C12 22 µF, 35 V Tantalum Surface Mount Chip Capacitors, Kemet #T491X226K035AS4394 C3, C7 20000 pF Chip Capacitors, B Case, ATC #100B203JCA50X C5, C14 5.1 pF Chip Capacitors, B Case, ATC #100B5R1CCA500X C6 100000 pF Chip Capacitor, B Case, ATC #100B104JCA50X C8 10000 pF Chip Capacitor, B Case, ATC #100B103JCA50X C9 7.5 pF Chip Capacitor, B Case, ATC #100B7R5CCA500X C10 1.2 pF Chip Capacitor, B Case, ATC #100B1R2CCA500X C13 0.1 µF Chip Capacitor, Kemet #CDR33BX104AKWS C15 16 pF Chip Capacitor, B Case, ATC #100B160KP500X C16 0.6 – 4.5 pF Variable Capacitor, Johanson Gigatrim #27271SL R1 1.0 kΩ, 1/8 W Chip Resistor R2 560 kΩ, 1/8 W Chip Resistor R3 4.7 Ω, 1/8 W Chip Resistor R4 12 Ω, 1/8 W Chip Resistor W1 Solid Copper Buss Wire, 16 AWG MRF21125 MRF21125S MRF21125SR3 4 MOTOROLA RF DEVICE DATA Figure 2. MRF21125 Test Circuit Component Layout MOTOROLA RF DEVICE DATA MRF21125 MRF21125S MRF21125SR3 5 ) ) %1( ) ) ) ) ) ) ), @ , @ < &' < &' ) @ < &' @ < &' ) η ./0 1 2 1 2 97 *+ " %,-( η ,""$%=( 97 ",%1( ./0 "%,-( η ,""$%=( 97 ",%1( ) 4, 4, 4, 2 13 ./0 2 %"( # 2 4, 5.).+ 67/84+0 &' .+ -963*+: ./0 " %,-( " Figure 7. Intermodulation Distortion versus Output Power MRF21125 MRF21125S MRF21125SR3 6 ) ) ) 97 ) ) "#"$ %&'( ) 4, 4, 4, 4, 2 13 2 < &' 2 < &' 5.).+ 67/84+0 &' .+ -963*+: ) ) ; 97 ",%1( ";,-%13( 4, ) Figure 6. Broadband Linearity Performance ) ) ) η ) ./0 " %,- ,< %),(( 2 13 2 < &' 2 < &' 5.).+ 67/84+0 &' .+ -963*+: ) ) ) ) ) , Figure 5. CW Performance ) ) Figure 4. 2 Carrier W–CDMA ACPR, IM3, Power Gain and Drain Efficiency versus Output Power ) Figure 3. 2 Carrier (10 MHz spacing) W–CDMA Spectrum ) ) ) 2 13 # 2 4, 2 &' ) "#"$ %&'( ) 2 13 # 2 4, 2 < &' 2 < &' >6++? -963*+: %>6++? 6+15*10>(A &' @ < &' 6BC,:< 2 < 1 @ < = 8.D6D*?*0E %( η 97 ± %13( ± ,%13( < &' >6++? ) ; ";--%1( ";,-%13( ) η ,""$%=( 97 ",%1( TYPICAL CHARACTERISTICS ./0 " %,-( " Figure 8. Power Gain versus Output Power MOTOROLA RF DEVICE DATA 2 &' *+ &' 2 # 2 4, ./0 2 %,:<( )688*8 ), f MHz . 2 Ω 2 &' Zin ;F Zin Ω ZOL* Ω 2110 3.81 + j6.86 1.56 – j1.58 2140 4.33 + j7.90 1.53 – j1.90 2170 4.84 + j8.46 1.48 – j2.26 = Complex conjugate of source impedance. ZOL* = Complex conjugate of the optimum load impedance at a given output power, voltage, IMD, bias current and frequency. &' .0 A ;F 567 3>.7+ D671 .+ 0861.7 D05+ :6*+ ./09/0 9.58 186*+ *3*+3E 6+1 *+084.1/?60*.+ 1*70.80*.+< .0 A 67/84+07 58 06B+ .+ 0> 070 3*83/*0 5*0> -, ;6/+3>87< +9/0 603>*+: 05.8B /09/0 603>*+: 05.8B *3 +18 70 Z in Z * OL Figure 9. Series Equivalent Input and Output Impedance MOTOROLA RF DEVICE DATA MRF21125 MRF21125S MRF21125SR3 7 NOTES MRF21125 MRF21125S MRF21125SR3 8 MOTOROLA RF DEVICE DATA NOTES MOTOROLA RF DEVICE DATA MRF21125 MRF21125S MRF21125SR3 9 NOTES MRF21125 MRF21125S MRF21125SR3 10 MOTOROLA RF DEVICE DATA PACKAGE DIMENSIONS B 4 G 2X 1 Q DDD , "-A < "- , ;", " ,- $ <) < < ;; "-A &< < "- & - ",-" < %<( ,,$ ,G," $< < """ ; "" "- < %<( ,-" -"< B (FLANGE) 3 K 2 DDD D , M DDD , , 333 N 333 R (INSULATOR) , S (LID) 666 , (LID) (INSULATOR) H C T A A (FLANGE) INCHES MIN MAX < < < < < < < < < < < < < - < < < < < < < < < < < < < < <" < " < " SEATING PLANE CASE 465B–03 ISSUE C (NI–880) (MRF21125) B "-A < "- , ;", " ,- $ <) < < ;; "-A &< < "- & - ",-" < %<( ,,$ ,G," $< 1 B (FLANGE) K 2 DDD D , MILLIMETERS MIN MAX < < < < < < < < < < < < <- < < < < < < < < < < < < < < < " <" < " -$;" A < , < ," < -" F E DIM A B C D E F G H K M N Q R S aaa bbb ccc DDD , 333 , M (INSULATOR) N R 333 , 666 , S (LID) (LID) (INSULATOR) DIM A B C D E F H K M N R S aaa bbb ccc INCHES MIN MAX < < < < < < < < < < < < < < < < < < < < < < < < <" < " < " MILLIMETERS MIN MAX < < < < < < < < < < < < < < < < < < < < < < < < < " <" < " -$;" A < , < ," < -" H C F E T A A (FLANGE) MOTOROLA RF DEVICE DATA SEATING PLANE CASE 465C–02 ISSUE A (NI–880S) (MRF21125S) MRF21125 MRF21125S MRF21125SR3 11 Motorola reserves the right to make changes without further notice to any products herein. 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MOTOROLA and the logo are registered in the US Patent & Trademark Office. All other product or service names are the property of their respective owners. E Motorola, Inc. 2002. How to reach us: USA/EUROPE/Locations Not Listed: Motorola Literature Distribution; P.O. Box 5405, Denver, Colorado 80217. 1–303–675–2140 or 1–800–441–2447 JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center, 3–20–1, Minami–Azabu. Minato–ku, Tokyo 106–8573 Japan. 81–3–3440–3569 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. 852–26668334 Technical Information Center: 1–800–521–6274 HOME PAGE: http://www.motorola.com/semiconductors/ MRF21125 MRF21125S MRF21125SR3 ◊ 12 MOTOROLA RF DEVICE MRF21125/D DATA