Order this document by MRF650/D SEMICONDUCTOR TECHNICAL DATA The RF Line Designed for 12.5 Volt UHF large–signal amplifier applications in industrial and commercial FM equipment operating to 520 MHz. • Guaranteed 440, 470, 512 MHz 12.5 Volt Characteristics Output Power = 50 Watts Minimum Gain = 5.2 dB @ 440, 470 MHz Efficiency = 55% @ 440, 470 MHz IRL = 10 dB 50 W, 512 MHz RF POWER TRANSISTOR NPN SILICON • Characterized with Series Equivalent Large–Signal Impedance Parameters from 400 to 520 MHz • Built–In Matching Network for Broadband Operation • Triple Ion Implanted for More Consistent Characteristics • Implanted Emitter Ballast Resistors • Silicon Nitride Passivated • 100% Tested for Load Mismatch Stress at all Phase Angles with 20:1 VSWR @ 15.5 Vdc, 2.0 dB Overdrive • Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ. CASE 316–01, STYLE 1 MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 16.5 Vdc Collector–Emitter Voltage VCES 38 Vdc Emitter–Base Voltage VEBO 4.0 Vdc Collector Current — Continuous IC 12 Adc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 135 0.77 Watts W/°C Storage Temperature Range Tstg – 65 to +150 °C TJ 200 °C Symbol Max Unit RθJC 1.3 °C/W Operating Junction Temperature THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit V(BR)CEO V(BR)CES 16.5 — — Vdc 38 — — Vdc V(BR)EBO ICES 4.0 — — Vdc — — 5.0 mAdc hFE 20 70 120 — Cob — 135 170 OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = 50 mAdc, IB = 0) Collector–Emitter Breakdown Voltage (IC = 50 mAdc, VBE = 0) Emitter–Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCE = 15 Vdc, VBE = 0, TC = 25°C) ON CHARACTERISTICS DC Current Gain (IC = 1.0 Adc, VCE = 5.0 Vdc) DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 12.5 Vdc, IE = 0, f = 1.0 MHz) pF (continued) REV 8 RF DEVICE DATA MOTOROLA Motorola, Inc. 1997 MRF650 1 ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Common–Emitter Amplifier Power Gain (VCC = 12.5 Vdc, Pout = 50 W, f = 440, 470 MHz) Gpe 5.2 6.1 — dB Common–Emitter Amplifier Power Gain (VCC = 12.5 Vdc, Pout = 50 W, f = 512 MHz) Gpe 5.0 5.9 — dB Input Return Loss (VCC = 12.5 Vdc, Pout = 50 W, f = 440, 470, 512 MHz) IRL 10 15 — dB Collector Efficiency (VCC = 12.5 Vdc, Pout = 50 W, f = 440, 470 MHz) η 55 65 — % Collector Efficiency (VCC = 12.5 Vdc, Pout = 50 W, f = 512 MHz) — 50 60 — % FUNCTIONAL TESTS (In Motorola Test Fixture. See Figure 1.) ψ (2) Output Mismatch Stress (VCC = 15.5 V, 2.0 dB Overdrive, f = 470 MHz, VSWR = 20:1, All Phase Angles) (1) No Degradation in Output Power NOTES: 1. Pin = 2.0 dB above drive requirement for 50 W output at 12.5 Vdc. 2. ψ = Mismatch stress factor — the electrical criterion established to verify the device resistance to load mismatch failure. The mismatch stress test is accomplished in the standard test fixture (Figure 1) terminated in a 20:1 minimum load mismatch at all phase angles. R1 ∆ VRE PORT R2 B1 B2 B3 B6 B7 B8 +12.5 Vdc SOCKET + C1 C2 C3 B5 B4 C4 C5 C6 + C7 C8 L2 L1 D.U.T. RF INPUT 50 Ω TL1 C9 TL3 TL4 TL7 TL8 TL9 TL10 C16 TL12 RF OUTPUT 50 Ω TL5 TL6 N2 N1 C12 TL2 C10 C13 C11 B1, B8 — Ferrite Bead Ferroxcube VK200 20–4B B2, B3, B4, B5, B6, B7 — Ferrite Bead Ferroxcube #56–590–3B C1, C8 — 10 µF, 25 V, 25%, Electrolytic, ECS TE–1204 C2, C7 — 1000 pF, Chip Cap, 5%, ATC 100B102JC50 C3, C6 — 91 pF, 5%, Mica, SAHA 3HS0006–91 C4, C5, C12, C13 — 36 pF, 5%, SAHA 3HS0006–36 C9, C16 — 220 pF, Chip Cap, 5%, ATC 100B221JC200 C10, C11, C15 — 0.8 – 10 pF, Variable, Johanson JMC501 PG26J200 C14 — 1.0 – 20 pF, Variable, Johanson JMC5501 PG26J200 L1, L2 — 3 Turns, 18 AWG, 0.19″ ID — Total Length 3.5″ N1, N2 — N Coaxial Conn., Omni–Spectra 3052–1648–10 R1, R2 — 10 Ohm, 10%, 1.0 W, Carbon, RCA 831010 C14 TL11 C15 TL1, TL12 — Zo = 50 Ohm TL2 — See Photomaster TL3 — See Photomaster TL4 — See Photomaster TL5 — See Photomaster TL6 — See Photomaster TL7 — See Photomaster TL8 — See Photomaster TL9 — See Photomaster TL10 — See Photomaster TL11 — See Photomaster Transmission Line Boards: 1/16″ Glass–Teflon Transmission Line Boards: Keene GX–0600–55–22 Transmission Line Boards: 2 oz. Cu Clad Both Sides Transmission Line Boards: εr = 2.55 Bias Boards: 1/16″ G10 or Equivalent Bias Boards: 2 oz. Cu Clad Double Sided Figure 1. 440 to 512 MHz Broadband Test Circuit Schematic MRF650 2 MOTOROLA RF DEVICE DATA 90 80 70 512 MHz 520 MHz 60 50 40 30 20 VCC = 12.5 Vdc 10 0 4 0 12 8 16 20 24 28 40 30 20 VCC = 12.5 Vdc 0 32 400 440 420 460 480 500 520 Pin, INPUT POWER (WATTS) f, FREQUENCY (MHz) Figure 2. Output Power versus Input Power Figure 3. Output Power versus Frequency 16 Pin = 17 W 15 W 13 W 11 W 70 60 Po = 50 W VCC = 12.5 Vdc 14 50 40 30 f = 512 MHz Pin, INPUT POWER (WATTS) 80 Po, OUTPUT POWER (WATTS) 15 W 13 W 11 W 50 10 90 12 Pin 7 8 9 10 11 12 13 14 15 16 80 ηc 8 70 6 60 4 2.0:1 0 17 90 10 VSWR 2 20 10 Pin = 17 W 60 η c , COLLECTOR EFFICIENCY (%) Po, OUTPUT POWER (WATTS) Po, OUTPUT POWER (WATTS) 70 440 460 1.5:1 480 500 1.0:1 520 VCC, SUPPLY VOLTAGE (VOLTS) f, FREQUENCY (MHz) Figure 4. Output Power versus Supply Voltage Figure 5. Broadband Performance for Po = 50 W VSWR f = 400 MHz 470 MHz 80 Pout = 50 W, VCC = 12.5 Vdc TUNED FOR MAXIMUM GAIN AT Po = 50 W Zin 470 440 f = 400 MHz 512 520 f (MHz) Zin Ω ZOL* Ω 400 440 470 512 520 0.7 + j2.8 0.7 + j3.2 0.8 + j3.3 0.8 + j3.2 0.7 + j3.0 1.4 + j2.3 1.1 + j2.6 0.8 + j2.7 0.7 + j2.9 0.6 + j3.0 NOTE: Zin & ZOL* are given from base–to–base and collector–to–collector respectively. ZOL* 520 470 512 440 f = 400 MHz ZOL* = Conjugate of the optimum load impedance ZOL* = into which the device operates at a given ZOL* = output power, voltage and frequency. Figure 6. Input and Output Impedance Normalized to 10 Ohms Circuit Tuned for Maximum Gain @ Po = 50 W MOTOROLA RF DEVICE DATA MRF650 3 R1, R2, R3, R4 B1 (440 – 512 MHz) L1 B3 L2 +12.5 Vdc C2 C10 C3 C5 TL4 C1 TL2 TL3 TL5 TL6 TL8 C11 C13 TL11 C7 D.U.T. TL1 B2 TL9 TL10 TL12 TL13 C12 TL14 TL7 N2 N1 C4 C6 C8 C9 R1, R2, R3, R4 — 39 Ohm 1/8 W 5% Rohm B1, B2 — Ferrite Bead Fair Rite Products Corp. B3 — Ferrite Bead Fair Rite Products Corp. TL1 — Zo = 50 Ohm TL2 — Zo = 50 Ohm TL3 — Zo = 50 Ohm TL4 — See Photomaster TL5 — Zo = 50 Ohm TL6 — See Photomaster TL7 — See Photomaster TL8 — See Photomaster TL9 — See Photomaster TL10 — Zo = 50 Ohm TL11 — See Photomaster TL12 — Zo = 50 Ohm TL13 — Zo = 50 Ohm TL14 — Zo = 50 Ohm C2, C11 — 820 pF, 5% C3, C10 — 91 pF, 5%, Mica, SAHA 3HS0006–91 C1, C12 — 220 pF, 5%, Murata Erie C4 — 9.1 pF, 5%, Murata Erie C5, C6, C7, C8 — 43 pF, 5%, Mica SAHA 3HS0006–43 C9 — 10 pF, 5%, Murata Erie C13 — 10 µF, Electrolytic, 50 V, Panasonic L1 — 7 Turns, 24 AWG, ID Dia. 0.116″ L2 — 5 Turns, 18 AWG, ID Dia. 0.165″ N1, N2 — SMA Flange Mount, Omni–Spectra 2052–1618–02 Board Material: 1/16″ G10, εr = 4.5 Board Material: 2 oz. Cu Clad Both Sides Figure 7. Schematic of Broadband Demonstration Amplifier (3) 80 f = 400 MHz 470 MHz 70 512 MHz 60 50 40 30 20 10 0 5 10 15 20 25 30 35 40 Pin = 15 W VCC = 12.5 V Po 60 ηc 50 80 40 70 30 60 20 2.0:1 10 VCC = 12.5 Vdc 0 70 0 430 1.5:1 VSWR 440 450 460 470 480 490 500 510 520 Pin, INPUT POWER (WATTS) f, FREQUENCY (MHz) Figure 8. Output Power versus Input Power Figure 9. Po, ηc and VSWR versus Frequency 1.0:1 530 VSWR 80 90 Pout , OUTPUT POWER (WATTS) Pout , OUTPUT POWER (WATTS) 100 η c , COLLECTOR EFFICIENCY (%) PERFORMANCE CHARACTERISTICS OF BROADBAND DEMONSTRATION AMPLIFIER (3) Detailed design and performance information available from Motorola upon request. MRF650 4 MOTOROLA RF DEVICE DATA PACKAGE DIMENSIONS F D 4 R NOTES: 1. FLANGE IS ISOLATED IN ALL STYLES. K 3 DIM A B C D E F H J K L N Q R U 1 Q 2 L B J C E N INCHES MIN MAX 24.38 25.14 12.45 12.95 5.97 7.62 5.33 5.58 2.16 3.04 5.08 5.33 18.29 18.54 0.10 0.15 10.29 11.17 3.81 4.06 3.81 4.31 2.92 3.30 3.05 3.30 11.94 12.57 MILLIMETERS MIN MAX 0.960 0.990 0.490 0.510 0.235 0.300 0.210 0.220 0.085 0.120 0.200 0.210 0.720 0.730 0.004 0.006 0.405 0.440 0.150 0.160 0.150 0.170 0.115 0.130 0.120 0.130 0.470 0.495 H A U STYLE 1: PIN 1. 2. 3. 4. EMITTER COLLECTOR EMITTER BASE CASE 316–01 ISSUE D MOTOROLA RF DEVICE DATA MRF650 5 Motorola reserves the right to make changes without further notice to any products herein. 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Mfax is a trademark of Motorola, Inc. How to reach us: USA / EUROPE / Locations Not Listed: Motorola Literature Distribution; P.O. Box 5405, Denver, Colorado 80217. 303–675–2140 or 1–800–441–2447 JAPAN: Nippon Motorola Ltd.: SPD, Strategic Planning Office, 4–32–1, Nishi–Gotanda, Shinagawa–ku, Tokyo 141, Japan. 81–3–5487–8488 Mfax: [email protected] – TOUCHTONE 602–244–6609 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, – US & Canada ONLY 1–800–774–1848 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 INTERNET: http://motorola.com/sps MRF650 6 ◊ MRF650/D MOTOROLA RF DEVICE DATA