MOTOROLA MRF21030LSR3

MOTOROLA
Freescale Semiconductor, Inc.
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by MRF21030/D
SEMICONDUCTOR TECHNICAL DATA
The RF MOSFET Line
RF Power Field Effect Transistors
MRF21030LR3
MRF21030LSR3
Freescale Semiconductor, Inc...
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for PCN and PCS base station applications with frequencies from
2.0 to 2.2 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
applications. To be used in Class AB for PCN - PCS/cellular radio and WLL
applications.
• Wideband CDMA Performance: - 45 dB ACPR @ 4.096 MHz, 28 Volts
Output Power — 3.5 Watts
Power Gain — 14 dB
Efficiency — 15%
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 2.11 GHz, 30 Watts CW
Output Power
• Excellent Thermal Stability
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Low Gold Plating Thickness on Leads, 40µ″ Nominal.
• In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 Inch Reel.
2.2 GHz, 30 W, 28 V
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465E - 04, STYLE 1
NI - 400
MRF21030LR3
CASE 465F - 04, STYLE 1
NI - 400S
MRF21030LSR3
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain - Source Voltage
VDSS
65
Vdc
Gate - Source Voltage
VGS
- 0.5, +15
Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
83.3
0.48
Watts
W/°C
Storage Temperature Range
Tstg
- 65 to +150
°C
Operating Junction Temperature
TJ
200
°C
ESD PROTECTION CHARACTERISTICS
Test Conditions
Class
Human Body Model
2 (Minimum)
Machine Model
M3 (Minimum)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
Max
Unit
RθJC
2.1
°C/W
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Rev. 10
MOTOROLA
RF DEVICE DATA
 Motorola,
Inc. 2004
For More Information On This Product,
Go to: www.freescale.com
MRF21030LR3 MRF21030LSR3
1
Freescale Semiconductor, Inc.
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Drain - Source Breakdown Voltage
(VGS = 0 Vdc, ID = 20 µA)
V(BR)DSS
65
—
—
Vdc
Zero Gate Voltage Drain Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
µAdc
Gate - Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
µAdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 100 µAdc)
VGS(th)
2
3
4
Vdc
Gate Quiescent Voltage
(VDS = 28 Vdc, ID = 250 mA)
VGS(Q)
2
3.3
4.5
Vdc
Drain - Source On - Voltage
(VGS = 10 Vdc, ID = 1 Adc)
VDS(on)
—
0.29
0.4
Vdc
Forward Transconductance
(VDS = 10 Vdc, ID = 1 Adc)
gfs
—
2
—
S
Input Capacitance (Including Input Matching Capacitor in Package) (1)
(VDS = 28 Vdc, VGS = 0, f = 1 MHz)
Ciss
—
98.5
—
pF
Output Capacitance (1)
(VDS = 28 Vdc, VGS = 0, f = 1 MHz)
Coss
—
37
—
pF
Reverse Transfer Capacitance
(VDS = 28 Vdc, VGS = 0, f = 1 MHz)
Crss
—
1.3
—
pF
Two - Tone Common - Source Amplifier Power Gain
(VDD = 28 Vdc, Pout = 30 W PEP, IDQ = 250 mA,
f1 = 2140.0 MHz, f2 = 2140.1 MHz)
Gps
—
13
—
dB
Two - Tone Drain Efficiency
(VDD = 28 Vdc, Pout = 30 W PEP, IDQ = 250 mA,
f1 = 2140.0 MHz, f2 = 2140.1 MHz)
η
—
33
—
%
3rd Order Intermodulation Distortion
(VDD = 28 Vdc, Pout = 30 W PEP, IDQ = 250 mA,
f1 = 2140.0 MHz, f2 = 2140.1 MHz)
IMD
—
- 30
—
dBc
Input Return Loss
(VDD = 28 Vdc, Pout = 30 W PEP, IDQ = 250 mA,
f1 = 2140.0 MHz, f2 = 2140.1 MHz)
IRL
—
- 13
—
dB
Two - Tone Common - Source Amplifier Power Gain
(VDD = 28 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 2110.0 MHz,
f2 = 2110.1 MHz and f1 = 2170.0 MHz, f2 = 2170.1 MHz)
Gps
12
13
—
dB
Two - Tone Drain Efficiency
(VDD = 28 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 2110.0 MHz,
f2 = 2110.1 MHz and f1 = 2170.0 MHz, f2 = 2170.1 MHz)
η
31
33
—
%
3rd Order Intermodulation Distortion
(VDD = 28 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 2110.0 MHz,
f2 = 2110.1 MHz and f1 = 2170.0 MHz, f2 = 2170.1 MHz)
IMD
—
- 30
- 27.5
dBc
Input Return Loss
(VDD = 28 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 2110.0 MHz,
f2 = 2110.1 MHz and f1 = 2170.0 MHz, f2 = 2170.1 MHz)
IRL
—
- 13
-9
dB
OFF CHARACTERISTICS
Freescale Semiconductor, Inc...
ON CHARACTERISTICS
DYNAMIC CHARACTERISTICS
FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system)
Output Mismatch Stress
(VDD = 28 Vdc, Pout = 30 W CW, IDQ = 250 mA,
f = 2110 MHz, VSWR = 10:1, All Phase Angles at Frequency of Tests)
Ψ
No Degradation In Output Power
Before and After Test
(1) Part is internally matched both on input and output.
MRF21030LR3 MRF21030LSR3
2
MOTOROLA RF DEVICE DATA
For More Information On This Product,
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Freescale Semiconductor, Inc.
B1
VGG
+
C6
B2
+
R1
C5
C4
C8
C10
Z1
Z2
Z3
Z4
Z5
Z6
C2
C3
Z7
C12
C13
Z8
Z9
Z10
RF
OUTPUT
C9
DUT
C7
Short Ferrite Beads
1 pF Chip Capacitor
4.7 pF Chip Capacitor
0.5 pF Chip Capacitor
3.9 pF Chip Capacitor
0.1 µF Chip Capacitors
470 µF, 63 V Electrolytic Chip Capacitors
0.3 pF Chip Capacitors
3.6 pF Chip Capacitor
22 µF Tantalum Chip Capacitor
5.1 pF Chip Capacitor
12.5 nH Inductors
12 Ω Chip Resistors (1206)
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z9
PCB
0.153″ x 0.087″ Microstrip
0.509″ x 0.156″ Microstrip
0.572″ x 0.087″ Microstrip
0.509″ x 0.232″ Microstrip
0.277″ x 0.143″ Microstrip
0.200″ x 0.305″ Microstrip
0.200″ x 0.511″ Microstrip
0.510″ x 0.328″ Microstrip
0.608″ x 0.081″ Microstrip
Taconic TLX8, 30 mils, εr = 2.55
Figure 1. MRF21030LR3(LSR3) Test Circuit Schematic
C13
+
V BIAS
+
C5
C6
R2
B2
R1
B1
Ground
C3
WB2
C8
L1
CUT OUT AREA
C1
VSUPPLY
C10
C4
C2
C12
C11
WB1
Freescale Semiconductor, Inc...
C1
B1, B2
C1
C2
C3
C4
C5, C12
C6, C13
C7, C8
C9
C10
C11
L1, L2
R1, R2
+
R2
L2
L1
RF
INPUT
C11
VDD
L2
C9
C7
Ground
MRF21030
Rev 1
Figure 2. MRF21030LR3(LSR3) Test Circuit Component Layout
MOTOROLA RF DEVICE DATA
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MRF21030LR3 MRF21030LSR3
3
Freescale Semiconductor, Inc.
−10
IRL
30
−15
η
−20
VDD = 28 Vdc, Pout = 30 W (PEP), IDQ = 250 mA
Two−Tone Measurement, 100 kHz Tone Spacing
20
−25
Gps
10
−30
IMD
0
2080
2100
2120
2140
2160
f, FREQUENCY (MHz)
2180
−35
2200
VDD = 28 Vdc, IDQ = 250 mA, f = 2140 MHz
Channel Spacing (Channel Bandwidth):
4.096 MHz (5 MHz)
25
20
−40
ACPR
15
−50
η
−60
5
0
−50
−55
1.0
6
−70
Figure 4. CDMA ACPR, Power Gain and
Drain Efficiency versus Output Power
IMD, INTERMODULATION DISTORTION (dBc)
IMD, INTERMODULATION DISTORTION (dBc)
−45
1
2
3
4
5
Pout, OUTPUT POWER (WATTS Avg.) CDMA
−20
VDD = 28 Vdc, f = 2140 MHz
Two−Tone Measurement,
−30
100 kHz Tone Spacing
−40
Gps
10
−25
−35
−30
200 mA
250 mA
400 mA
300 mA
350 mA
10
Pout, OUTPUT POWER (WATTS) PEP
100
3rd Order
VDD = 28 Vdc, IDQ = 250 mA, f = 2140 MHz
Two−Tone Measurement,
100 kHz Tone Spacing
−30
−40
7th Order
−50
5th Order
−60
−70
1.0
Figure 5. Intermodulation Distortion
versus Output Power
10
Pout, OUTPUT POWER (WATTS) PEP
100
Figure 6. Intermodulation Distortion Products
versus Output Power
15
16
−22
−24
14.5
G ps , POWER GAIN (dB)
400 mA
15
350 mA
300 mA
14
250 mA
200 mA
VDD = 28 Vdc, f = 2140 MHz
Two−Tone Measurement, 100 kHz Tone Spacing
13
1.0
10
100
Pout, OUTPUT POWER (WATTS) PEP
Figure 7. Power Gain versus Output Power
MRF21030LR3 MRF21030LSR3
4
−26
Gps
−28
14
−30
IMD
−32
13.5
−34
Pout = 30 W (PEP)
IDQ = 250 mA, f = 2140 MHz
Two−Tone Measurement, 100 kHz Tone Spacing
13
20
22
24
26
28
30
−36
32
−38
34
VDD, DRAIN VOLTAGE (VOLTS)
Figure 8. Power Gain and
Intermodulation Distortion versus Supply Voltage
MOTOROLA RF DEVICE DATA
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IMD, INTERMODULATION DISTORTION (dBc)
40
−20
30
ADJACENT CHANNEL POWER RATIO (dB)
50
η, DRAIN EFFICIENCY (%),G ps , POWER GAIN (dB)
−5
IRL, INPUT RETURN LOSS (dB)
IMD, INTERMODULATION DISTORTION (dBc)
60
Figure 3. Class AB Broadband Circuit Performance
G ps , POWER GAIN (dB)
Freescale Semiconductor, Inc...
η, DRAIN EFFICIENCY (%),G ps , POWER GAIN (dB)
TYPICAL CHARACTERISTICS
Freescale Semiconductor, Inc.
Zo = 25 Ω
f = 2170 MHz
Zload
f = 2110 MHz
f = 2170 MHz
Zsource
Freescale Semiconductor, Inc...
f = 2110 MHz
VDD = 28 V, IDQ = 250 mA, Pout = 30 W PEP
f
MHz
Zsource
Ω
Zload
Ω
2110
15.3 - j9.4
3.7 - j0.78
2140
14.6 - j9.4
3.4 - j0.37
2170
14.3 - j8.8
3.0 + j0.13
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured
from drain to ground.
Output
Matching
Network
Device
Under Test
Input
Matching
Network
Z
source
Z
load
Figure 9. Series Equivalent Source and Load Impedance
MOTOROLA RF DEVICE DATA
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Go to: www.freescale.com
MRF21030LR3 MRF21030LSR3
5
Freescale Semiconductor, Inc.
Freescale Semiconductor, Inc...
NOTES
MRF21030LR3 MRF21030LSR3
6
MOTOROLA RF DEVICE DATA
For More Information On This Product,
Go to: www.freescale.com
Freescale Semiconductor, Inc.
PACKAGE DIMENSIONS
2X
G
bbb
Q
M
T B
M
A
M
NOTES:
1. CONTROLLING DIMENSION: INCH.
2. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M, 1994.
3. DIMENSION H IS MEASURED 0.030 (0.762)
AWAY FROM PACKAGE BODY.
4. INFORMATION ONLY: CORNER BREAK (4X) TO
BE .060±.005 (1.52±0.13) RADIUS OR .06±.005
(1.52±0.13) x 45° CHAMFER.
B
SEE NOTE 4
1
2X K
3
B
2
2X D
bbb
M
T A
M
B
M
N (LID)
Freescale Semiconductor, Inc...
ccc
M
T A
B
M
ccc
M
aaa
M
T A
M
B
M
A
M
F
S
(INSULATOR)
SEATING
PLANE
T
M
(INSULATOR)
B
M
R (LID)
C
E
T A
M
aaa
M
T A
M
H
B
M
CASE 465E - 04
ISSUE E
NI - 400
MRF21030LR3
M
B
2
2X K
M
T A
M
N
E
B
R
M
(LID)
ccc
(LID)
C
M
T A
M
B
M
M
B
M
F
3
A
T
A
(FLANGE)
M
aaa
M
T A
M
SEATING
PLANE
(INSULATOR)
B
M
MILLIMETERS
MIN
MAX
20.19
20.44
9.65
9.9
3.17
4.14
6.98
7.24
0.89
1.14
0.10
0.15
15.24 BSC
1.45
1.7
2.33
3.1
10
10.3
10
10.3
3.05
3.3
10
10.3
10
10.3
0.127 BSC
0.254 BSC
0.381 BSC
NOTES:
1. CONTROLLING DIMENSION: INCH.
2. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M−1994.
3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
M
1
ccc
INCHES
MIN
MAX
.795
.805
.380
.390
.125
.163
.275
.285
.035
.045
.004
.006
.600 BSC
.057
.067
.092
.122
.395
.405
.395
.405
.120
.130
.395
.405
.395
.405
.005 BSC
.010 BSC
.015 BSC
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
A
2X D
bbb M T A
DIM
A
B
C
D
E
F
G
H
K
M
N
Q
R
S
aaa
bbb
ccc
H
S
(INSULATOR)
aaa
B
(FLANGE)
M
T A
B
DIM
A
B
C
D
E
F
H
K
M
N
R
S
aaa
bbb
ccc
INCHES
MIN
MAX
.395
.405
.395
.405
.125
.163
.275
.285
.035
.045
.004
.006
.057
.067
.092
.122
.395
.405
.395
.405
.395
.405
.395
.405
.005 REF
.010 REF
.015 REF
MILLIMETERS
MIN
MAX
10.03
10.29
10.03
10.29
3.18
4.14
6.98
7.24
0.89
1.14
0.10
0.15
1.45
1.70
2.34
3.10
10.03
10.29
10.03
10.29
10.03
10.29
10.03
10.29
0.127 REF
0.254 REF
0.38 REF
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
CASE 465F - 04
ISSUE C
NI - 400S
MRF21030LSR3
MOTOROLA RF DEVICE DATA
For More Information On This Product,
Go to: www.freescale.com
MRF21030LR3 MRF21030LSR3
7
Freescale Semiconductor, Inc...
Freescale Semiconductor, Inc.
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specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters that may be provided in Motorola
data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including
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E Motorola Inc. 2004
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852-26668334
HOME PAGE: http://motorola.com/semiconductors
MRF21030LR3 MRF21030LSR3
8
MOTOROLA RF DEVICE DATA
◊For More Information On This Product,
Go to: www.freescale.com
MRF21030/D