MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF9030/D SEMICONDUCTOR TECHNICAL DATA The RF Sub - Micron MOSFET Line RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices make them ideal for large - signal, common - source amplifier applications in 26 volt base station equipment. Freescale Semiconductor, Inc... • Typical Two - Tone Performance at 945 MHz, 26 Volts Output Power — 30 Watts PEP Power Gain — 19 dB Efficiency — 41.5% IMD — - 32.5 dBc MRF9030LR1 MRF9030LSR1 945 MHz, 30 W, 26 V LATERAL N - CHANNEL BROADBAND RF POWER MOSFETs • Integrated ESD Protection • Designed for Maximum Gain and Insertion Phase Flatness • Capable of Handling 10:1 VSWR, @ 26 Vdc, 945 MHz, 30 Watts CW Output Power • Excellent Thermal Stability CASE 360B - 05, STYLE 1 NI - 360 MRF9030LR1 • Characterized with Series Equivalent Large - Signal Impedance Parameters • In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel. • Low Gold Plating Thickness on Leads. L Suffix Indicates 40µ″ Nominal. CASE 360C - 05, STYLE 1 NI - 360S MRF9030LSR1 MAXIMUM RATINGS Rating Symbol Value Unit Drain - Source Voltage VDSS 68 Vdc Gate - Source Voltage VGS - 0.5, + 15 Vdc PD 92 0.53 117 0.67 Watts W/°C Storage Temperature Range Tstg - 65 to +150 °C Operating Junction Temperature TJ 200 °C Symbol Max Unit RθJC 1.9 1.5 °C/W Total Device Dissipation @ TC = 25°C Derate above 25°C MRF9030LR1 MRF9030LSR1 THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case MRF9030LR1 MRF9030LSR1 ESD PROTECTION CHARACTERISTICS Test Conditions Human Body Model Class 1 (Minimum) Machine Model M1 (Minimum) NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 4 MOTOROLA RF DEVICE DATA Motorola, Inc. 2003 For More Information On This Product, Go to: www.freescale.com MRF9030LR1 MRF9030LSR1 1 Freescale Semiconductor, Inc. ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 68 Vdc, VGS = 0 Vdc) IDSS — — 10 µAdc Zero Gate Voltage Drain Leakage Current (VDS = 26 Vdc, VGS = 0 Vdc) IDSS — — 1 µAdc Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 1 µAdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 100 µAdc) VGS(th) 2 2.9 4 Vdc Gate Quiescent Voltage (VDS = 26 Vdc, ID = 250 mAdc) VGS(Q) — 3.8 — Vdc Drain - Source On - Voltage (VGS = 10 Vdc, ID = 0.7 Adc) VDS(on) — 0.19 0.4 Vdc gfs — 3 — S Input Capacitance (VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Ciss — 49.5 — pF Output Capacitance (VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Coss — 26.5 — pF Reverse Transfer Capacitance (VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss — 1 — pF OFF CHARACTERISTICS Freescale Semiconductor, Inc... ON CHARACTERISTICS Forward Transconductance (VDS = 10 Vdc, ID = 2 Adc) DYNAMIC CHARACTERISTICS (continued) MRF9030LR1 MRF9030LSR1 2 MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com Freescale Semiconductor, Inc. ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Two - Tone Common - Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 945.0 MHz, f2 = 945.1 MHz) Gps 18 19 — dB Two - Tone Drain Efficiency (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 945.0 MHz, f2 = 945.1 MHz) η 37 41.5 — % 3rd Order Intermodulation Distortion (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 945.0 MHz, f2 = 945.1 MHz) IMD — - 32.5 - 28 dBc Input Return Loss (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 945.0 MHz, f2 = 945.1 MHz) IRL — - 15.5 -9 dB Two - Tone Common - Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz, f2 = 960.1 MHz) Gps — 19 — dB Two - Tone Drain Efficiency (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz, f2 = 960.1 MHz) η — 41.5 — % 3rd Order Intermodulation Distortion (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz, f2 = 960.1 MHz) IMD — - 33 — dBc Input Return Loss (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz, f2 = 960.1 MHz) IRL — - 14 — dB Power Output, 1 dB Compression Point (VDD = 26 Vdc, Pout = 30 W CW, IDQ = 250 mA, f1 = 945.0 MHz) P1dB — 30 — W Common - Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 30 W CW, IDQ = 250 mA, f1 = 945.0 MHz) Gps — 19 — dB Drain Efficiency (VDD = 26 Vdc, Pout = 30 W CW, IDQ = 250 mA, f1 = 945.0 MHz) η — 60 — % Output Mismatch Stress (VDD = 26 Vdc, Pout = 30 W CW, IDQ = 250 mA, f = 945.0 MHz, VSWR = 10:1, All Phase Angles at Frequency of Tests) Ψ Freescale Semiconductor, Inc... FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) MOTOROLA RF DEVICE DATA No Degradation In Output Power For More Information On This Product, Go to: www.freescale.com MRF9030LR1 MRF9030LSR1 3 Freescale Semiconductor, Inc. B2 B1 VGG VDD + C7 C8 C14 C5 L1 RF INPUT Z1 Z2 Z3 Z4 Z5 Z6 Z7 + + C15 C16 C17 L2 C9 DUT + Z8 Z9 Z10 Z11 Z12 C13 C1 C2 B1 B2 C1, C8, C13, C14 C2, C4 C3 C5, C6 C7, C15, C16 C9, C10 C11 C12 C17 L1, L2 Z1 Z2 C3 C4 C6 Short Ferrite Bead Long Ferrite Bead 47 pF Chip Capacitors, B Case 0.8 pF to 8.0 pF Trim Capacitors 3.9 pF Chip Capacitor, B Case 7.5 pF Chip Capacitors, B Case 10 µF, 35 V Tantalum Capacitors 10 pF Chip Capacitors, B Case 9.1 pF Chip Capacitor, B Case 0.6 pF to 4.5 pF Trim Capacitor 220 µF, 50 V Electrolytic Capacitor 12.5 nH Surface Mount Inductors 0.260″ x 0.060″ Microstrip 0.240″ x 0.060″ Microstrip C10 Z3 Z4 Z5 Z6 Z7 Z8 Z9 Z10 Z11 Z12 Z13 PCB C11 C12 0.500″ x 0.100″ Microstrip 0.215″ x 0.270″ Microstrip 0.315″ x 0.270″ Microstrip 0.160″ x 0.270″ x 0.520″, Taper 0.285″ x 0.520″ Microstrip 0.140″ x 0.270″ Microstrip 0.450″ x 0.270″ Microstrip 0.250″ x 0.060″ Microstrip 0.720″ x 0.060″ Microstrip 0.490″ x 0.060″ Microstrip 0.290″ x 0.060″ Microstrip Taconic RF - 35 - 0300, 30 mil, εr = 3.55 Figure 1. 945 MHz Broadband Test Circuit Schematic C7 C17 VDD VGG C8 C9 L1 RF INPUT C1 C2 C14 C5 C15 C16 L2 C13 C3 C4 C6 CUT OUT AREA Freescale Semiconductor, Inc... Z13 RF OUTPUT C10 C11 RF OUTPUT C12 MRF9030 900 MHz Rev −02 Figure 2. 945 MHz Broadband Test Circuit Component Layout MRF9030LR1 MRF9030LSR1 4 MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com Freescale Semiconductor, Inc. 50 Gps G ps , POWER GAIN (dB) 19 45 η 18 40 VDD = 26 Vdc Pout = 30 W (PEP) IDQ = 250 mA Two −Tone, 100 kHz Tone Spac− ing 17 16 IMD 15 35 −30 −32 IRL 14 −34 13 −36 12 930 935 940 945 950 955 −38 960 −10 −12 −14 −16 −18 IRL, INPUT RETURN LOSS (dB) 20 η, DRAIN EFFICIENCY (%) IMD, INTERMODULATION DISTORTION (dBc) TYPICAL CHARACTERISTICS G ps , POWER GAIN (dB) 19.5 IDQ = 375 mA 19 300 mA 18.5 250 mA 200 mA 18 17.5 VDD = 26 Vdc f1 = 945 MHz, f2 = 945.1 MHz 17 1 10 VDD = 26 Vdc f1 = 945 MHz, f2 = 945.1 MHz −30 IDQ = 200 mA −40 300 mA 250 mA −50 375 mA −60 1 100 10 100 Pout, OUTPUT POWER (WATTS) PEP Pout, OUTPUT POWER (WATTS) PEP Figure 4. Power Gain versus Output Power Figure 5. Intermodulation Distortion versus Output Power 22 0 VDD = 26 Vdc IDQ = 250 mA f1 = 945 MHz, f2 = 945.1 MHz 20 G ps , POWER GAIN (dB) −10 −20 −20 −30 3rd Order −40 −50 5th Order 7th Order 1 50 Gps 18 40 16 30 η 14 20 12 −60 −70 60 VDD = 26 Vdc IDQ = 250 mA f = 945 MHz 10 100 Pout, OUTPUT POWER (WATTS) PEP Figure 6. Intermodulation Distortion Products versus Output Power MOTOROLA RF DEVICE DATA 10 0.1 η, DRAIN EFFICIENCY (%) 20 IMD, INTERMODULATION DISTORTION (dBc) Figure 3. Class AB Broadband Circuit Performance IMD, INTERMODULATION DISTORTION (dBc) Freescale Semiconductor, Inc... f, FREQUENCY (MHz) 10 0 1 10 100 Pout, OUTPUT POWER (WATTS) AVG. Figure 7. Power Gain and Efficiency versus Output Power For More Information On This Product, Go to: www.freescale.com MRF9030LR1 MRF9030LSR1 5 20 60 Gps G ps , POWER GAIN (dB) 18 40 16 20 VDD = 26 Vdc IDQ = 250 mA f1 = 945 MHz, f2 = 945.1 MHz η 14 12 10 0 −20 −40 IMD 8 η, DRAIN EFFICIENCY (%) IMD, INTERMODULATION DISTORTION (dBc) Freescale Semiconductor, Inc. −60 1 10 100 Pout, OUTPUT POWER (WATTS) PEP Freescale Semiconductor, Inc... Figure 8. Power Gain, Efficiency and IMD versus Output Power MRF9030LR1 MRF9030LSR1 6 MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com Freescale Semiconductor, Inc... Freescale Semiconductor, Inc. Zo = 5 Ω Zsource Zload f = 930 MHz f = 930 MHz f = 960 MHz f = 960 MHz VDD = 26 V, IDQ = 250 mA, Pout = 30 W PEP f MHz Zsource Ω Zload Ω 930 1.34 - j0.1 3.175 + j0.09 945 1.36 - j0.2 3.1 + j0.08 960 1.4 - j0.14 3.0 + j0.05 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Input Matching Network Z source Z load Figure 9. Series Equivalent Input and Output Impedance MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com MRF9030LR1 MRF9030LSR1 7 Freescale Semiconductor, Inc. Freescale Semiconductor, Inc... NOTES MRF9030LR1 MRF9030LSR1 8 MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com Freescale Semiconductor, Inc. Freescale Semiconductor, Inc... NOTES MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com MRF9030LR1 MRF9030LSR1 9 Freescale Semiconductor, Inc. Freescale Semiconductor, Inc... NOTES MRF9030LR1 MRF9030LSR1 10 MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com Freescale Semiconductor, Inc. PACKAGE DIMENSIONS Q aaa 2X G B M T A M B M NOTES: 1. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M−1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. 1 3 B (FLANGE) D bbb M T A K 2X 2X M B R M (LID) ccc N ccc (LID) Freescale Semiconductor, Inc... DIM A B C D E F G H K M N Q R S aaa bbb ccc 2 T A M M B M T A M B M F H M C E S (INSULATOR) T M bbb (INSULATOR) A aaa SEATING PLANE M T A M B M T A M B M MILLIMETERS MIN MAX 20.19 20.45 5.72 5.97 3.18 4.45 5.33 5.59 1.40 1.65 0.10 0.15 14.28 BSC 1.96 2.21 5.59 6.35 9.02 9.27 9.07 9.22 3.18 3.43 5.77 5.92 5.72 5.97 0.13 REF 0.25 REF 0.38 REF STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE M CASE 360B - 05 ISSUE F NI - 360 MRF9030LR1 A INCHES MIN MAX 0.795 0.805 0.225 0.235 0.125 0.175 0.210 0.220 0.055 0.065 0.004 0.006 0.562 BSC 0.077 0.087 0.220 0.250 0.355 0.365 0.357 0.363 0.125 0.135 0.227 0.233 0.225 0.235 0.005 REF 0.010 REF 0.015 REF A A (FLANGE) B 1 NOTES: 1. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M−1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. 2 B (FLANGE) 2X D bbb M T A M 2X K B M R (LID) ccc M T A M N (LID) ccc M B M F H T A M B M E C S (INSULATOR) PIN 3 T M (INSULATOR) bbb M T A M B SEATING PLANE M MOTOROLA RF DEVICE DATA aaa M T A M B M CASE 360C - 05 ISSUE D NI - 360S MRF9030LSR1 For More Information On This Product, Go to: www.freescale.com DIM A B C D E F H K M N R S aaa bbb ccc INCHES MIN MAX 0.375 0.385 0.225 0.235 0.105 0.155 0.210 0.220 0.035 0.045 0.004 0.006 0.057 0.067 0.085 0.115 0.355 0.365 0.357 0.363 0.227 0.23 0.225 0.235 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 9.53 9.78 5.72 5.97 2.67 3.94 5.33 5.59 0.89 1.14 0.10 0.15 1.45 1.70 2.16 2.92 9.02 9.27 9.07 9.22 5.77 5.92 5.72 5.97 0.13 REF 0.25 REF 0.38 REF STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE MRF9030LR1 MRF9030LSR1 11 Freescale Semiconductor, Inc... Freescale Semiconductor, Inc. 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E Motorola Inc. 2003 HOW TO REACH US: JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center, 3-20-1, Minami-Azabu, Minato-ku, Tokyo 106-8573, Japan 81-3-3440-3569 USA /EUROPE /LOCATIONS NOT LISTED: Motorola Literature Distribution P.O. Box 5405, Denver, Colorado 80217 1-800-521-6274 or 480-768-2130 ASIA /PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong 852-26668334 HOME PAGE: http://motorola.com/semiconductors MRF9030LR1 MRF9030LSR1 12 ◊ MRF9030/D MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com