MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF19030/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF19030LR3 MRF19030LSR3 RF Power Field Effect Transistors Freescale Semiconductor, Inc... N - Channel Enhancement - Mode Lateral MOSFETs Designed for class AB PCN and PCS base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. • CDMA Performance @ 1990 MHz, 26 Volts IS - 97 CDMA Pilot, Sync, Paging, Traffic Codes 8 Thru 13 885 kHz — - 47 dBc @ 30 kHz BW 1.25 MHz — - 55 dBc @ 12.5 kHz BW 2.25 MHz — - 55 dBc @ 1 MHz BW Output Power — 4.5 Watts Avg. Power Gain — 13.5 dB Efficiency — 17% • Internally Matched, Controlled Q, for Ease of Use • High Gain, High Efficiency and High Linearity • Integrated ESD Protection • Designed for Maximum Gain and Insertion Phase Flatness • Capable of Handling 10:1 VSWR, @ 26 Vdc, 1.93 GHz, 30 Watts CW Output Power • Excellent Thermal Stability • Characterized with Series Equivalent Large - Signal Impedance Parameters • Low Gold Plating Thickness on Leads, 40µ″ Nominal. • In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 Inch Reel. 2.0 GHz, 30 W, 26 V LATERAL N - CHANNEL RF POWER MOSFETs CASE 465E - 04, STYLE 1 NI - 400 MRF19030LR3 CASE 465F - 04, STYLE 1 NI - 400S MRF19030LSR3 MAXIMUM RATINGS Symbol Value Unit Drain - Source Voltage Rating VDSS 65 Vdc Gate - Source Voltage VGS - 0.5, +15 Vdc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 83.3 0.48 Watts W/°C Storage Temperature Range Tstg - 65 to +150 °C Operating Junction Temperature TJ 200 °C Symbol Value Unit RθJC 2.1 °C/W THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case ESD PROTECTION CHARACTERISTICS Test Conditions Human Body Model Class 2 (Minimum) Machine Model M3 (Minimum) NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. Rev. 10 MOTOROLA RF DEVICE DATA Motorola, Inc. 2004 For More Information On This Product, Go to: www.freescale.com MRF19030LR3 MRF19030LSR3 1 Freescale Semiconductor, Inc. ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Drain - Source Breakdown Voltage (VGS = 0 Vdc, ID = 20 µA) V(BR)DSS 65 — — Vdc Zero Gate Voltage Drain Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS — — 1 µAdc Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 1 µAdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 100 µAdc) VGS(th) 2 3 4 Vdc Gate Quiescent Voltage (VDS = 28 Vdc, ID = 300 mA) VGS(Q) 2 3.3 4.5 Vdc Drain - Source On - Voltage (VGS = 10 Vdc, ID = 1 Adc) VDS(on) — 0.29 0.4 Vdc Forward Transconductance (VDS = 10 Vdc, ID = 1 Adc) gfs — 2 — S Input Capacitance (Including Input Matching Capacitor in Package) (1) (VDS = 26 Vdc, VGS = 0, f = 1 MHz) Ciss — 98.5 — pF Output Capacitance (1) (VDS = 26 Vdc, VGS = 0, f = 1 MHz) Coss — 37 — pF Reverse Transfer Capacitance (VDS = 26 Vdc, VGS = 0, f = 1 MHz) Crss — 1.3 — pF Two - Tone Common - Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 300 mA, f1 = 1960.0 MHz, f2 = 1960.1 MHz) Gps — 13 — dB Two - Tone Drain Efficiency (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 300 mA, f1 = 1960.0 MHz, f2 = 1960.1 MHz) η — 36 — % 3rd Order Intermodulation Distortion (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 300 mA, f1 = 1960.0 MHz, f2 = 1960.1 MHz) IMD — - 31 — dBc Input Return Loss (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 300 mA, f1 = 1960.0 MHz, f2 = 1960.1 MHz) IRL — - 13 — dB Two - Tone Common - Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 300 mA, f1 = 1930.0 MHz, f2 = 1930.1 MHz and f1 = 1990.0 MHz, f2 = 1990.1 MHz) Gps 12 13 — dB Two - Tone Drain Efficiency (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 300 mA, f1 = 1930.0 MHz, f2 = 1930.1 MHz and f1 = 1990.0 MHz, f2 = 1990.1 MHz) η 33 36 — % 3rd Order Intermodulation Distortion (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 300 mA, f1 = 1930.0 MHz, f2 = 1930.1 MHz and f1 = 1990.0 MHz, f2 = 1990.1 MHz) IMD — - 31 - 28 dBc Input Return Loss (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 300 mA, f1 = 1930.0 MHz, f2 = 1930.1 MHz and f1 = 1990.0 MHz, f2 = 1990.1 MHz) IRL — - 13 -9 dB OFF CHARACTERISTICS Freescale Semiconductor, Inc... ON CHARACTERISTICS DYNAMIC CHARACTERISTICS FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) Output Mismatch Stress (VDD = 26 Vdc, Pout = 30 W CW, IDQ = 300 mA, f = 1930 MHz, VSWR = 10:1, All Phase Angles at Frequency of Tests) Ψ No Degradation In Output Power Before and After Test (1) Part is internally matched both on input and output. MRF19030LR3 MRF19030LSR3 2 MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com Freescale Semiconductor, Inc. VGG + C2 B1 B2 R3 R1 R2 R4 C3 C4 + C6 C9 B3 B4 B5 R5 R6 R7 C5 Z6 Z7 Z9 Z8 Z5 Z1 Z2 Z3 C8 Z10 RF OUTPUT C7 Z4 C1 + L3 L2 RF INPUT VDD DUT L4 C10 Freescale Semiconductor, Inc... L1 B1 - B5 C1, C7 C2, C8 C3, C5 C4, C6 C9 C10 L1 - L4 R1 - R7 Z1 Z2 Short Ferrite Beads 10 pF Chip Capacitors, B Case 470 µF, 35 V Electrolytic Capacitors 0.1 µF Chip Capacitors, B Case 5.1 pF Chip Capacitors, B Case 22 µF Tantalum Chip Capacitor 0.4 - 2.5 pF Variable Capacitor, Johanson Gigatrim 12.5 nH Inductors 12 Ω Chip Resistors (0805) 0.080″ x 0.595″ Microstrip 0.080″ x 0.600″ Microstrip Z3 Z4 Z5 Z6 Z7 Z8 Z9 Z10 Substrate 0.080″ 0.325″ 0.510″ 0.510″ 0.325″ 0.080″ 0.080″ 0.080″ 0.030″ Arlon x 0.480″ Microstrip x 0.280″ Microstrip x 0.200″ Microstrip x 0.200″ Microstrip x 0.280″ Microstrip x 0.480″ Microstrip x 0.530″ Microstrip x 0.671″ Microstrip x 3.00″ x 5.00″ Glass Teflon, Figure 1. MRF19030LR3(LSR3) Test Circuit Schematic C2 C8 C3 R1 B2 B1 R2 C5 R6 B4 C4 R3 R4 B3 R5 C9 L2 L3 C6 C7 C1 L1 R7 B5 L4 C10 MRF19030 Rev. 0 Figure 2. MRF19030LR3(LSR3) Test Circuit Component Layout MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com MRF19030LR3 MRF19030LSR3 3 Freescale Semiconductor, Inc. −15 η 20 −20 VDD = 26 Vdc IDQ = 300 mA, Pout = 30 W (PEP) Two−Tone Measurement, 100 kHz Tone Spacing −25 Gps 10 −30 IMD 0 1900 1920 1940 1960 1980 f, FREQUENCY (MHz) 2000 −35 2020 VDD = 26 Vdc IDQ = 350 mA, f = 1960 MHz, Channel Spacing (Channel Bandwidth): 885 kHz (30 kHz), 1.25 MHz (12.5 kHz), 2.25 MHz (1 MHz) 40 35 −50 2.25 MHz 25 885 kHz 20 1.25 MHz −70 15 Gps −80 10 CDMA 9 Channels Forward PILOT:0, PAGING:1, TRAFFIC:8−13, SYNC:32 −90 5 0 2 4 6 8 10 Pout, OUTPUT POWER (WATTS Avg.) CDMA −40 300 mA 400 mA −45 350 mA −50 300 mA −55 1.0 10 Pout, OUTPUT POWER (WATTS) PEP 100 VDD = 26 Vdc, IDQ = 300 mA, f = 1960 MHz Two−Tone Measurement, 100 kHz Tone Spacing −30 3rd Order −40 −50 5th Order 7th Order −60 −70 −80 1.0 Figure 5. Intermodulation Distortion versus Output Power 10 Pout, OUTPUT POWER (WATTS) PEP 100 Figure 6. Intermodulation Distortion Products versus Output Power 15 −22 14 G ps , POWER GAIN (dB) 400 mA 350 mA 300 mA 13 300 mA 200 mA f = 1960 MHz IDQ = 300 mA, Pout = 30 W (PEP) Two−Tone Measurement, 100 kHz Tone Spacing 13.5 −24 −26 Gps −28 −30 13 IMD −32 −34 12.5 VDD = 26 Vdc, f = 1960 MHz Two−Tone Measurement, 100 kHz Tone Spacing 11 1.0 −100 12 Figure 4. CDMA ACPR, Power Gain and Drain Efficiency versus Output Power IMD, INTERMODULATION DISTORTION (dBc) IMD, INTERMODULATION DISTORTION (dBc) 200 mA 12 −60 η −20 VDD = 26 Vdc, f = 1960 MHz Two−Tone Measurement, 100 kHz Tone Spacing −35 14 −40 30 −25 −30 −30 10 100 Pout, OUTPUT POWER (WATTS) PEP Figure 7. Power Gain versus Output Power MRF19030LR3 MRF19030LSR3 4 −36 12 20 22 24 26 28 30 32 −38 34 VDD, DRAIN VOLTAGE (VOLTS) Figure 8. Power Gain and Intermodulation Distortion versus Supply Voltage MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com IMD, INTERMODULATION DISTORTION (dBc) 30 −20 45 ADJACENT CHANNEL POWER RATION (dB) IRL 40 η, DRAIN EFFICIENCY (%),G ps , POWER GAIN (dB) −10 IRL, INPUT RETURN LOSS (dB) IMD, INTERMODULATION DISTORTION (dBc) 50 Figure 3. Class AB Broadband Circuit Performance G ps , POWER GAIN (dB) Freescale Semiconductor, Inc... η, DRAIN EFFICIENCY (%),G ps , POWER GAIN (dB) TYPICAL CHARACTERISTICS Freescale Semiconductor, Inc. f = 1990 MHz f = 1990 MHz Zload Zsource f = 1930 MHz Freescale Semiconductor, Inc... f = 1930 MHz Zo = 25 Ω VDD = 26 V, IDQ = 300 mA, Pout = 30 W PEP f MHz Zsource Ω Zload Ω 1930 10.57 - j7.69 5.81 - j5.01 1960 10.54 - j7.43 5.84 - j4.67 1990 10.47 - j7.21 5.84 - j4.35 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Input Matching Network Z source Z load Figure 9. Series Equivalent Source and Load Impedance MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com MRF19030LR3 MRF19030LSR3 5 Freescale Semiconductor, Inc. Freescale Semiconductor, Inc... NOTES MRF19030LR3 MRF19030LSR3 6 MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com Freescale Semiconductor, Inc. PACKAGE DIMENSIONS 2X G bbb Q M T B M A M NOTES: 1. CONTROLLING DIMENSION: INCH. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1994. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. 4. INFORMATION ONLY: CORNER BREAK (4X) TO BE .060±.005 (1.52±0.13) RADIUS OR .06±.005 (1.52±0.13) x 45° CHAMFER. B SEE NOTE 4 1 2X K 3 B 2 2X D bbb M T A M B M N (LID) Freescale Semiconductor, Inc... ccc M T A B M ccc M aaa M T A M B M A 2X D bbb M T A S (INSULATOR) SEATING PLANE aaa A M F T M (INSULATOR) B M R (LID) C E T A M M T A M H B M B 2 2X K M T A M N E B R M (LID) ccc (LID) C M T A M B M M B M F 3 A T A (FLANGE) M aaa M T A M SEATING PLANE (INSULATOR) B M MILLIMETERS MIN MAX 20.19 20.44 9.65 9.9 3.17 4.14 6.98 7.24 0.89 1.14 0.10 0.15 15.24 BSC 1.45 1.7 2.33 3.1 10 10.3 10 10.3 3.05 3.3 10 10.3 10 10.3 0.127 BSC 0.254 BSC 0.381 BSC NOTES: 1. CONTROLLING DIMENSION: INCH. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M−1994. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. M 1 ccc INCHES MIN MAX .795 .805 .380 .390 .125 .163 .275 .285 .035 .045 .004 .006 .600 BSC .057 .067 .092 .122 .395 .405 .395 .405 .120 .130 .395 .405 .395 .405 .005 BSC .010 BSC .015 BSC STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE CASE 465E - 04 ISSUE E NI - 400 MRF19030LR3 M DIM A B C D E F G H K M N Q R S aaa bbb ccc H S (INSULATOR) aaa B (FLANGE) M T A B DIM A B C D E F H K M N R S aaa bbb ccc INCHES MIN MAX .395 .405 .395 .405 .125 .163 .275 .285 .035 .045 .004 .006 .057 .067 .092 .122 .395 .405 .395 .405 .395 .405 .395 .405 .005 REF .010 REF .015 REF MILLIMETERS MIN MAX 10.03 10.29 10.03 10.29 3.18 4.14 6.98 7.24 0.89 1.14 0.10 0.15 1.45 1.70 2.34 3.10 10.03 10.29 10.03 10.29 10.03 10.29 10.03 10.29 0.127 REF 0.254 REF 0.38 REF STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE CASE 465F - 04 ISSUE C NI - 400S MRF19030LSR3 MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com MRF19030LR3 MRF19030LSR3 7 Freescale Semiconductor, Inc... Freescale Semiconductor, Inc. Information in this document is provided solely to enable system and software implementers to use Motorola products. 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MOTOROLA and the Stylized M Logo are registered in the US Patent and Trademark Office. All other product or service names are the property of their respective owners. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. E Motorola Inc. 2004 HOW TO REACH US: JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center, 3-20-1, Minami-Azabu, Minato-ku, Tokyo 106-8573, Japan 81-3-3440-3569 USA /EUROPE /LOCATIONS NOT LISTED: Motorola Literature Distribution P.O. Box 5405, Denver, Colorado 80217 1-800-521-6274 or 480-768-2130 ASIA /PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong 852-26668334 HOME PAGE: http://motorola.com/semiconductors MRF19030LR3 MRF19030LSR3 8 ◊ MOTOROLA RF DEVICE MRF19030/D DATA For More Information On This Product, Go to: www.freescale.com