Freescale Semiconductor Technical Data Document Number: MRF6S9060 Rev. 1, 6/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large - signal, common - source amplifier applications in 28 volt base station equipment. • Typical Single - Carrier N - CDMA Performance @ 880 MHz, VDD = 28 Volts, IDQ = 450 mA, Pout = 14 Watts Avg., IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain — 21.4 dB Drain Efficiency — 32.1% ACPR @ 750 kHz Offset — - 47.6 dBc @ 30 kHz Bandwidth GSM EDGE Application • Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 500 mA, Pout = 21 Watts Avg., Full Frequency Band (921 - 960 MHz) Power Gain — 20 dB Drain Efficiency — 46% Spectral Regrowth @ 400 kHz Offset = - 62 dBc Spectral Regrowth @ 600 kHz Offset = - 78 dBc EVM — 1.5% rms GSM Application • Typical GSM Performance: VDD = 28 Volts, IDQ = 500 mA, Pout = 60 Watts, Full Frequency Band (921 - 960 MHz) Power Gain — 20 dB Drain Efficiency — 63% • Capable of Handling 10:1 VSWR, @ 28 Vdc, 880 MHz, 60 Watts CW Output Power • Characterized with Series Equivalent Large - Signal Impedance Parameters • Integrated ESD Protection • N Suffix Indicates Lead - Free Terminations • 200°C Capable Plastic Package • TO - 270 - 2 in Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel. • TO - 272 - 2 in Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel. MRF6S9060NR1 MRF6S9060NBR1 MRF6S9060MR1 MRF6S9060MBR1 880 MHz, 14 W AVG., 28 V SINGLE N - CDMA LATERAL N - CHANNEL BROADBAND RF POWER MOSFETs CASE 1265- 08, STYLE 1 TO - 270 - 2 PLASTIC MRF6S9060NR1(MR1) CASE 1337 - 03, STYLE 1 TO - 272 - 2 PLASTIC MRF6S9060NBR1(MBR1) Table 1. Maximum Ratings Rating Symbol Value Unit Drain - Source Voltage VDSS - 0.5, +68 Vdc Gate - Source Voltage VGS - 0.5, + 12 Vdc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 227 1.3 W W/°C Storage Temperature Range Tstg - 65 to +150 °C Operating Junction Temperature TJ 200 °C NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. Freescale Semiconductor, Inc., 2005. All rights reserved. RF Device Data Freescale Semiconductor MRF6S9060NR1 MRF6S9060NBR1 MRF6S9060MR1 MRF6S9060MBR1 1 Table 2. Thermal Characteristics Characteristic Value (1,2) Symbol Thermal Resistance, Junction to Case Case Temperature 80°C, 60 W CW Case Temperature 80°C, 14 W CW RθJC Unit °C/W 0.77 0.88 Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22 - A114) 1A (Minimum) Machine Model (per EIA/JESD22 - A115) A (Minimum) Charge Device Model (per JESD22 - C101) IV (Minimum) Table 4. Moisture Sensitivity Level Test Methodology Per JESD 22 - A113, IPC/JEDEC J - STD - 020 Rating Package Peak Temperature Unit 3 260 °C Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted) Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 68 Vdc, VGS = 0 Vdc) IDSS — — 10 µAdc Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS — — 1 µAdc Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 1 µAdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 200 µA) VGS(th) 1 2 3 Vdc Gate Quiescent Voltage (VDS = 28 Vdc, ID = 450 mAdc) VGS(Q) — 2.9 — Vdc Drain - Source On - Voltage (VGS = 10 Vdc, ID = 1.5 Adc) VDS(on) — 0.18 0.4 Vdc gfs — 4.2 — S Input Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Ciss — 106 — pF Output Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Coss — 33 — pF Reverse Transfer Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss — 1.4 — pF Characteristic Off Characteristics On Characteristics Forward Transconductance (VDS = 10 Vdc, ID = 3 Adc) Dynamic Characteristics Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 450 mA, Pout = 14 W Avg., f = 880 MHz, Single - Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth @ ±750 kHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF Power Gain Gps 20.5 21.4 23.5 dB Drain Efficiency ηD 30.5 32.1 — % ACPR — - 47.6 - 45 dBc IRL — - 15.3 -9 dB Adjacent Channel Power Ratio Input Return Loss 1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access the MTTF calculators by product. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. MRF6S9060NR1 MRF6S9060NBR1 MRF6S9060MR1 MRF6S9060MBR1 2 RF Device Data Freescale Semiconductor Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Typical GSM EDGE Performances (In Freescale GSM EDGE Test Fixture Optimized for 921 - 960 MHz, 50 οhm system) VDD = 28 Vdc, IDQ = 500 mA, Pout = 21 W Avg., f = 921 - 960 MHz, GSM EDGE Signal Power Gain Gps — 20 — dB Drain Efficiency ηD — 46 — % Error Vector Magnitude EVM — 1.5 — % Spectral Regrowth at 400 kHz Offset SR1 — - 62 — dBc Spectral Regrowth at 600 kHz Offset SR2 — - 78 — dBc Typical CW Performances (In Freescale GSM Test Fixture Optimized for 921 - 960 MHz, 50 οhm system) VDD = 28 Vdc, IDQ = 500 mA, Pout = 60 W, f = 921 - 960 MHz Power Gain Gps — 20 — dB Drain Efficiency ηD — 63 — % IRL — - 12 — dB P1dB — 67 — W Input Return Loss Pout @ 1 dB Compression Point (f = 940 MHz) MRF6S9060NR1 MRF6S9060NBR1 MRF6S9060MR1 MRF6S9060MBR1 RF Device Data Freescale Semiconductor 3 B2 B1 R1 VBIAS + + C9 RF INPUT C15 R3 R2 C7 C8 Z2 Z3 Z4 Z5 L1 Z6 + + + C16 C17 C19 C11 L2 Z10 Z1 R4 Z7 Z8 Z11 Z12 Z13 C10 C1 C13 C12 C18 RF Z15 OUTPUT Z14 C6 Z9 VSUPPLY C14 DUT C2 Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 0.215″ 0.221″ 0.500″ 0.460″ 0.040″ 0.280″ 0.087″ 0.435″ x 0.065″ x 0.065″ x 0.100″ x 0.270″ x 0.270″ x 0.270″ x 0.525″ x 0.525″ C3 C4 C5 Microstrip Microstrip Microstrip Microstrip Microstrip x 0.530″ Taper Microstrip Microstrip Z9 Z10 Z11 Z12 Z13 Z14 Z15 PCB 0.057″ x 0.525″ Microstrip 0.360″ x 0.270″ Microstrip 0.063″ x 0.270″ Microstrip 0.360″ x 0.065″ Microstrip 0.170″ x 0.065″ Microstrip 0.880″ x 0.065″ Microstrip 0.260″ x 0.065″ Microstrip Taconic RF - 35 0.030″, εr = 3.5 Figure 1. MRF6S9060NR1(NBR1)/MR1(MBR1) Test Circuit Schematic Table 6. MRF6S9060NR1(NBR1)/MR1(MBR1) Test Circuit Component Designations and Values Part Description Part Number Manufacturer B1 Ferrite Bead 95F786 Newark B2 Ferrite Bead 95F787 Newark C1, C8, C14, C15 47 pF Chip Capacitors 100B470JP500X Newark C2, C4, C13 0.8 - 8.0 pF Variable Capacitors, Gigatrim 44F3360 Newark C3 3.0 pF Chip Capacitor 100B3R0JP500X Newark C5, C6 15 pF Chip Capacitors 100B150JP500X Newark C7, C16, C17 10 µF, 35 V Tantalum Capacitors 93F2975 Newark C9 100 µF, 50 V Electrolytic Capacitor 51F2913 Newark C10, C11 13 pF Chip Capacitors 100B130JP500X Newark C12 3.9 pF Chip Capacitor 100B3R9JP500X Newark C18 0.56 µF Chip Capacitor 700A561MP150X Newark C19 470 µF, 63 V Electrolytic Capacitor 95F4579 Newark L1, L2 12.5 nH Inductor A04T - 5 Coilcraft R1 1 kΩ Chip Resistor 05F1545 Newark R2 560 kΩ Chip Resistor 84N2435 Newark R3 12 Ω Chip Resistor 97C9103 Newark R4 27 W Chip Resistor 04H7058 Newark MRF6S9060NR1 MRF6S9060NBR1 MRF6S9060MR1 MRF6S9060MBR1 4 RF Device Data Freescale Semiconductor C7 VGG R2 C19 B1 R3 R1 C8 C15 C9 C2 C3 C5 R4 C18 L2 CUT OUT AREA C6 L1 C1 VDD C16 C17 B2 C11 C10 C12 C14 C13 C4 TO−270/272 Surface / Bolt down Figure 2. MRF6S9060NR1(NBR1)/MR1(MBR1) Test Circuit Component Layout MRF6S9060NR1 MRF6S9060NBR1 MRF6S9060MR1 MRF6S9060MBR1 RF Device Data Freescale Semiconductor 5 21.8 35 ηD 30 21.6 Gps 21.4 −45 ACPR 21.2 −50 IRL 21 −55 −60 20.8 ALT1 −65 920 20.6 840 850 860 870 880 890 900 910 −8 ACPR (dBc), ALT1 (dBc) Gps, POWER GAIN (dB) 40 VDD = 28 Vdc, Pout = 14 W (Avg.), IDQ = 450 mA N−CDMA IS−95 Pilot, Sync, Paging, Traffic Codes 8 Through 13 −12 −16 −20 −24 IRL, INPUT RETURN LOSS (dB) 22 ηD, DRAIN EFFICIENCY (%) TYPICAL CHARACTERISTICS f, FREQUENCY (MHz) 48 ηD 46 44 21 Gps 20.8 −32 ACPR 20.6 −40 20.4 IRL −48 ALT1 20.2 20 840 −56 −64 850 860 870 880 890 900 910 −4 ACPR (dBc), ALT1 (dBc) Gps, POWER GAIN (dB) VDD = 28 Vdc, Pout = 28 W (Avg.), IDQ = 450 mA 21.4 N−CDMA IS−95 Pilot, Sync, Paging, Traffic Codes 8 Through 13 21.2 −8 −12 −16 −20 IRL, INPUT RETURN LOSS (dB) 50 21.6 ηD, DRAIN EFFICIENCY (%) Figure 3. Single - Carrier N - CDMA Broadband Performance @ Pout = 14 Watts Avg. 920 f, FREQUENCY (MHz) Figure 4. Single - Carrier N - CDMA Broadband Performance @ Pout = 28 Watts Avg. 23 IDQ = 675 mA 22 Gps, POWER GAIN (dB) IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc) −10 550 mA 450 mA 21 350 mA 20 225 mA 19 18 VDD = 28 Vdc, f1 = 880 MHz, f2 = 880.1 MHz Two −Tone Measurements, 100 kHz Tone Spacing VDD = 28 Vdc, f1 = 880 MHz, f2 = 880.1 MHz Two −Tone Measurements, 100 kHz Tone Spacing −20 −30 IDQ = 225 mA −40 350 mA −50 450 mA 550 mA 675 mA −60 17 1 10 100 300 1 Figure 5. Two - Tone Power Gain versus Output Power 10 100 Pout, OUTPUT POWER (WATTS) PEP Pout, OUTPUT POWER (WATTS) PEP Figure 6. Third Order Intermodulation Distortion versus Output Power MRF6S9060NR1 MRF6S9060NBR1 MRF6S9060MR1 MRF6S9060MBR1 6 RF Device Data Freescale Semiconductor −10 IMD, INTERMODULATION DISTORTION (dBc) IMD, INTERMODULATION DISTORTION (dBc) TYPICAL CHARACTERISTICS VDD = 28 Vdc, IDQ = 450 mA, f1 = 880 MHz −20 f2 = 880.1 MHz, Two −Tone Measurements Center Frequency = 880 MHz −30 −40 −50 3rd Order −60 5th Order −70 7th Order −80 1 10 100 300 0 VDD = 28 Vdc, Pout = 60 W (PEP) IDQ = 450 mA, Two −Tone Measurements Center Frequency = 880 MHz −10 −20 −30 3rd Order −40 5th Order −50 −60 7th Order −70 0.05 0.1 1 10 100 Pout, OUTPUT POWER (WATTS) PEP TWO −TONE SPACING (MHz) Figure 7. Intermodulation Distortion Products versus Output Power Figure 8. Intermodulation Distortion Products versus Tone Spacing Pout, OUTPUT POWER (dBm) 56 55 54 Ideal P3dB = 50 dBm (150 W) 53 52 51 50 49 300 P1dB = 49.1 dBm (100 W) Actual 48 47 VDD = 28 Vdc, IDQ = 450 mA Pulsed CW, 8 µsec(on), 1 msec(off) Center Frequency = 880 MHz 46 45 44 22 23 24 25 26 27 28 29 30 31 32 33 34 Pin, INPUT POWER (dBm) 55 −25 ηD VDD = 28 Vdc, IDQ = 450 mA f = 880 MHz, N−CDMA IS−95 Pilot, Sync, Paging, Traffic Codes 8 Through 13 45 ALT1 85_C −45 −30_C 25_C ACPR −55 35 25 Gps 15 TC = 25_C −35 25_C 85_C −65 −30_C 5 −5 25_C −75 −85 1 10 ACPR, ADJACENT CHANNEL POWER RATIO (dBc) ALT1, CHANNEL POWER (dBc) ηD, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB) Figure 9. Pulse CW Output Power versus Input Power Pout, OUTPUT POWER (WATTS) AVG. Figure 10. Single - Carrier N - CDMA ACPR, ALT1, Power Gain and Drain Efficiency versus Output Power MRF6S9060NR1 MRF6S9060NBR1 MRF6S9060MR1 MRF6S9060MBR1 RF Device Data Freescale Semiconductor 7 TYPICAL CHARACTERISTICS 22 21 70 Gps 25_C 25_C 60 85_C 50 20.5 85_C 20 40 19.5 30 19 20 ηD 18.5 VDD = 28 Vdc IDQ = 450 mA f = 880 MHz 18 1 ηD, DRAIN EFFICIENCY (%) TC = −30_C 21.5 Gps, POWER GAIN (dB) 80 −30_C 10 0 10 100 Pout, OUTPUT POWER (WATTS) CW Figure 11. Power Gain and Drain Efficiency versus CW Output Power Gps, POWER GAIN (dB) 22 21 20 19 18 17 28 V 32 V 24 V 16 15 14 20 V 16 V 13 12 11 10 IDQ = 450 mA f = 880 MHz VDD = 12 V 0 10 20 30 40 50 60 70 80 90 100 110 120 130 140 Pout, OUTPUT POWER (WATTS) CW Figure 12. Power Gain versus Output Power MTTF FACTOR (HOURS X AMPS2) 109 108 107 106 90 100 110 120 130 140 150 160 170 180 190 200 210 TJ, JUNCTION TEMPERATURE (°C) This above graph displays calculated MTTF in hours x ampere2 drain current. Life tests at elevated temperatures have correlated to better than ±10% of the theoretical prediction for metal failure. Divide MTTF factor by ID2 for MTTF in a particular application. Figure 13. MTTF Factor versus Junction Temperature MRF6S9060NR1 MRF6S9060NBR1 MRF6S9060MR1 MRF6S9060MBR1 8 RF Device Data Freescale Semiconductor N - CDMA TEST SIGNAL 100 −10 1.2288 MHz Channel BW −20 −30 1 −40 −50 0.1 (dB) PROBABILITY (%) 10 IS−95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) 1.2288 MHz Channel Bandwidth Carriers. ACPR Measured in 30 kHz Bandwidth @ ±750 kHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF. 0.01 0.001 −60 −70 −80 −ACPR @ 30 kHz Integrated BW −90 0.0001 0 2 4 6 8 10 +ACPR @ 30 kHz Integrated BW −100 PEAK −TO−AVERAGE (dB) Figure 14. Single - Carrier CCDF N - CDMA −110 −3.6 −2.9 −2.2 −1.5 −0.7 0 0.7 1.5 2.2 2.9 3.6 f, FREQUENCY (MHz) Figure 15. Single - Carrier N - CDMA Spectrum MRF6S9060NR1 MRF6S9060NBR1 MRF6S9060MR1 MRF6S9060MBR1 RF Device Data Freescale Semiconductor 9 Zo = 5 Ω f = 910 MHz f = 910 MHz Zload Zsource f = 850 MHz f = 850 MHz VDD = 28 Vdc, IDQ = 450 mA, Pout = 14 W Avg. f MHz Zsource Ω Zload Ω 850 0.44 - j0.20 2.28 + j0.23 865 0.44 - j0.07 2.18 + j0.33 880 0.45 + j0.50 2.20 + j0.47 895 0.48 + j0.18 2.15 + j0.61 910 0.52 + j0.29 2.00 + j0.68 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Input Matching Network Z source Z load Figure 16. Series Equivalent Source and Load Impedance MRF6S9060NR1 MRF6S9060NBR1 MRF6S9060MR1 MRF6S9060MBR1 10 RF Device Data Freescale Semiconductor NOTES MRF6S9060NR1 MRF6S9060NBR1 MRF6S9060MR1 MRF6S9060MBR1 RF Device Data Freescale Semiconductor 11 NOTES MRF6S9060NR1 MRF6S9060NBR1 MRF6S9060MR1 MRF6S9060MBR1 12 RF Device Data Freescale Semiconductor NOTES MRF6S9060NR1 MRF6S9060NBR1 MRF6S9060MR1 MRF6S9060MBR1 RF Device Data Freescale Semiconductor 13 PACKAGE DIMENSIONS E1 B 2X E4 aaa D aaa M M 2X D3 D A 2X D1 b1 D A PIN ONE ID E A E5 E3 PIN 2 D2 PIN 3 ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ EXPOSED HEATSINK AREA PIN 1 DIM A A1 A2 D D1 D2 D3 E E1 E2 E3 E4 E5 F b1 c1 aaa BOTTOM VIEW F c1 H DATUM PLANE NOTES: 1. CONTROLLING DIMENSION: INCH. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M−1994. 3. DATUM PLANE −H− IS LOCATED AT TOP OF LEAD AND IS COINCIDENT WITH THE LEAD WHERE THE LEAD EXITS THE PLASTIC BODY AT THE TOP OF THE PARTING LINE. 4. DIMENSIONS “D1" AND “E1" DO NOT INCLUDE MOLD PROTRUSION. ALLOWABLE PROTRUSION IS .006 PER SIDE. DIMENSIONS “D1" AND “E1" DO INCLUDE MOLD MISMATCH AND ARE DETER− MINED AT DATUM PLANE −H−. 5. DIMENSION b1 DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE .005 TOTAL IN EXCESS OF THE b1 DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. DATUMS −A− AND −B− TO BE DETERMINED AT DATUM PLANE −H−. 7. DIMENSION A2 APPLIES WITHIN ZONE “J" ONLY. 8. DIMENSIONS “D" AND “E2" DO NOT INCLUDE MOLD PROTRUSION. ALLOWABLE PROTRUSION IS .003 PER SIDE. DIMENSIONS “D" AND “E2" DO INCLUDE MOLD MISMATCH AND ARE DETER− MINED AT DATUM PLANE −D−. ZONE J A A1 INCHES MIN MAX .078 .082 .039 .043 .040 .042 .416 .424 .378 .382 .290 .320 .016 .024 .436 .444 .238 .242 .066 .074 .150 .180 .058 .066 .231 .235 .025 BSC .193 .199 .007 .011 .004 MILLIMETERS MIN MAX 1.98 2.08 0.99 1.09 1.02 1.07 10.57 10.77 9.60 9.70 7.37 8.13 0.41 0.61 11.07 11.28 6.04 6.15 1.68 1.88 3.81 4.57 1.47 1.68 5.87 5.97 0.64 BSC 4.90 5.06 0.18 0.28 0.10 STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE 2X A2 NOTE 7 E2 E5 D CASE 1265 - 08 ISSUE H TO - 270- 2 PLASTIC MRF6S9060NR1(MR1) MRF6S9060NR1 MRF6S9060NBR1 MRF6S9060MR1 MRF6S9060MBR1 14 RF Device Data Freescale Semiconductor 2X aaa M A E1 B r1 C A B GATE LEAD D1 2X ÉÉÉÉÉ ÉÉÉÉÉ ÉÉÉÉÉ ÉÉÉÉÉ ÉÉÉÉÉ ÉÉÉÉÉ ÉÉÉÉÉ ÉÉÉÉÉ ÉÉÉÉÉ ÉÉÉÉÉ ÉÉÉÉÉ ÉÉÉÉÉ ÉÉÉÉÉ DRAIN LEAD b1 aaa M D C A 2 E DRAIN ID PIN 3 1 NOTE 8 E2 VIEW Y - Y c1 H F ZONE "J" DATUM PLANE A A1 A2 7 E2 Y Y C SEATING PLANE STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE CASE 1337 - 03 ISSUE C TO - 272- 2 PLASTIC MRF6S9060NBR1(MBR1) NOTES: 1. CONTROLLING DIMENSION: INCH. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1994. 3. DATUM PLANE −H− IS LOCATED AT THE TOP OF LEAD AND IS COINCIDENT WITH THE LEAD WHERE THE LEAD EXITS THE PLASTIC BODY AT THE TOP OF THE PARTING LINE. 4. DIMENSIONS "D" AND "E1" DO NOT INCLUDE MOLD PROTRUSION. ALLOWABLE PROTRUSION IS .006 PER SIDE. DIMENSIONS "D" AND "E1" DO INCLUDE MOLD MISMATCH AND ARE DETERMINED AT DATUM PLANE −H−. 5. DIMENSION "b1" DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE .005 TOTAL IN EXCESS OF THE "b1" DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. DATUMS −A− AND −B− TO BE DETERMINED AT DATUM PLANE −H−. 7. DIMENSION A2 APPLIES WITHIN ZONE "J" ONLY. 8. CROSSHATCHING REPRESENTS THE EXPOSED AREA OF THE HEAT SLUG. DIM A A1 A2 D D1 E E1 E2 F b1 c1 r1 aaa INCHES MIN MAX .100 .104 .039 .043 .040 .042 .928 .932 .810 BSC .438 .442 .248 .252 .241 .245 .025 BSC .193 .199 .007 .011 .063 .068 .004 MILLIMETERS MIN MAX 2.54 2.64 0.99 1.09 1.02 1.07 23.57 23.67 20.57 BSC 11.12 11.23 6.30 6.40 6.12 6.22 0.64 BSC 5.05 4.90 .18 .28 1.60 1.73 .10 MRF6S9060NR1 MRF6S9060NBR1 MRF6S9060MR1 MRF6S9060MBR1 RF Device Data Freescale Semiconductor 15 How to Reach Us: Home Page: www.freescale.com E - mail: [email protected] USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370 1300 N. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. Freescale Semiconductor, Inc. 2005. All rights reserved. MRF6S9060NR1 MRF6S9060NBR1 MRF6S9060MR1 MRF6S9060MBR1 Document Number: MRF6S9060 Rev. 1, 6/2005 16 RF Device Data Freescale Semiconductor