MOTOROLA MRF5S19090LR3

MOTOROLA
Freescale Semiconductor, Inc.
Order this document
by MRF5S19090L/D
SEMICONDUCTOR TECHNICAL DATA
MRF5S19090LR3 and MRF5S19090LSR3 replaced by MRF5S19090HR3 and
MRF5S19090HSR3. “H” suffix indicates lower thermal resistance package.
The RF MOSFET Line
MRF5S19090LR3
RF Power Field Effect Transistors MRF5S19090LSR3
Designed for PCN and PCS base station applications with frequencies up to
1.9 to 2.0 GHz. Suitable for TDMA, CDMA and multicarrier amplifier
applications.
• Typical 2 - Carrier N - CDMA Performance for VDD = 28 Volts,
IDQ = 850 mA, f1 = 1958.75 MHz, f2 = 1961.25 MHz
IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13)
1.2288 MHz Channel Bandwidth Carrier. Adjacent Channels Measured
over a 30 kHz Bandwidth at f1 - 885 kHz and f2 +885 kHz. Distortion
Products Measured over 1.2288 MHz Bandwidth at f1 - 2.5 MHz and
f2 +2.5 MHz. Peak/Avg. = 9.8 dB @ 0.01% Probability on CCDF.
Output Power — 18 Watts Avg.
Power Gain — 14.5 dB
Efficiency — 25.8%
ACPR — - 51 dB
IM3 — - 37 dBc
• Internally Matched, Controlled Q, for Ease of Use
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 1960 MHz,
90 Watts CW Output Power
• Excellent Thermal Stability
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Qualified Up to a Maximum of 32 VDD Operation
• Low Gold Plating Thickness on Leads. L Suffix Indicates 40µ″ Nominal.
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
1990 MHz, 18 W AVG.,
2 x N - CDMA, 28 V
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465- 06, STYLE 1
NI - 780
MRF5S19090LR3
CASE 465A - 06, STYLE 1
NI - 780S
MRF5S19090LSR3
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain - Source Voltage
VDSS
65
Vdc
Gate - Source Voltage
VGS
- 0.5, +15
Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
261
1.49
Watts
W/°C
Storage Temperature Range
Tstg
- 65 to +200
°C
Operating Junction Temperature
TJ
200
°C
Symbol
Value (1,2)
Unit
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80°C, 90 W CW
Case Temperature 80°C, 18 W CW
RθJC
0.67
0.75
°C/W
(1) MTTF calculator available at http://www.motorola.com/semiconductors/rf . Select Tools/Software/Application Software/Calculators to
access the MTTF calculators by product.
(2) Refer to AN1955/D, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.motorola.com/semiconductors/rf .
Select Documentation/Application Notes - AN1955.
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 1
MOTOROLA
RF DEVICE DATA
 Motorola,
Inc. 2004
MRF5S19090LR3 MRF5S19090LSR3
1
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N - Channel Enhancement - Mode Lateral MOSFETs
Freescale Semiconductor, Inc.
ESD PROTECTION CHARACTERISTICS
Test Conditions
Class
Human Body Model
1 (Minimum)
Machine Model
M3 (Minimum)
Charge Device Model
C7 (Minimum)
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
µAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
µAdc
Gate - Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
µAdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 200 µAdc)
VGS(th)
2.5
2.7
3.5
Vdc
Gate Quiescent Voltage
(VDS = 28 Vdc, ID = 850 mAdc)
VGS(Q)
—
3.7
—
Vdc
Drain - Source On - Voltage
(VGS = 10 Vdc, ID = 2 Adc)
VDS(on)
—
0.26
—
Vdc
Forward Transconductance
(VDS = 10 Vdc, ID = 2 Adc)
gfs
—
5
—
S
Crss
—
1.7
—
pF
ON CHARACTERISTICS (DC)
DYNAMIC CHARACTERISTICS
Reverse Transfer Capacitance (1)
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) 2 - Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carriers. ACPR
measured in 30 kHz Bandwidth and IM3 measured in 1.2288 MHz Bandwidth. Peak/Avg. Ratio = 9.8 dB @ 0.01% Probability on CCDF.
Common - Source Amplifier Power Gain
(VDD = 28 Vdc, Pout = 18 W Avg., IDQ = 850 mA, f1 = 1930 MHz,
f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 =1990 MHz)
Gps
13.5
14.5
—
dB
Drain Efficiency
(VDD = 28 Vdc, Pout = 18 W Avg., IDQ = 850 mA, f1 = 1930 MHz,
f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 =1990 MHz)
η
24
25.8
—
%
IM3
—
- 37
- 35
dBc
ACPR
—
- 51
- 48
dBc
IRL
—
- 14.5
-9
dB
Third Order Intermodulation Distortion
(VDD = 28 Vdc, Pout = 18 W Avg., IDQ = 850 mA, f1 = 1930 MHz,
f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 =1990 MHz); IM3 measured
over 1.2288 MHz bandwidth at f1 - 2.5 MHz and f2 = +2.5 MHz)
Adjacent Channel Power Ratio
(VDD = 28 Vdc, Pout = 18 W Avg., IDQ = 850 mA, f1 = 1930 MHz,
f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 =1990 MHz); ACPR
measured over 30 kHz bandwidth at f1 - 885 kHz and f2 +885 kHz)
Input Return Loss
(VDD = 28 Vdc, Pout = 18 W Avg., IDQ = 850 mA, f1 = 1930 MHz,
f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 =1990 MHz)
(1) Part is internally matched both on input and output.
MRF5S19090LR3 MRF5S19090LSR3
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MOTOROLA RF DEVICE DATA
ARCHIVE INFORMATION
Freescale Semiconductor, Inc.
ARCHIVE
INFORMATION
OFF CHARACTERISTICS
Freescale Semiconductor, Inc.
B1
VGG
W1
+
R1
C3
R2
C4
C5
+
+
R3
C8
C7
C13
C11
+
C9
C12
VDD
+
C10
R4
C6
Z9
Z6
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z2
Z3
C15
C14
0.140″
0.450″
0.140″
0.525″
0.636″
0.340″
0.320″
Z4
Z5
Z8
Z10
Z11
Z12
Z7
Z13
RF
OUTPUT
C2
C1
x 0.080″ Microstrip
x 0.080″ Microstrip
x 0.080″ Microstrip
x 0.080″ Microstrip
x 0.141″ Microstrip
x 0.050″ Microstrip
x 1.401″ Microstrip
Z8
Z9
Z10
Z11
Z12
Z13
PCB
0.091″ x 1.133″ Microstrip
0.542″ x 0.071″ Microstrip
0.450″ x 1.133″ Microstrip
0.640″ x 0.141″ Microstrip
0.316″ x 0.080″ Microstrip
1.209″ x 0.080″ Microstrip
Arlon GX - 0300 - 55 - 22, 30 mil, εr = 2.55
Figure 1. MRF5S19090 Test Circuit Schematic
Table 1. MRF5S19090 Test Circuit Component Designations and Values
Part
Description
Value, P/N or DWG
Manufacturer
B1
Short RF Bead
95F786
Newark
C1
22 pF Chip Capacitor, B Case
100B220CP 500X
ATC
C2
10 pF Chip Capacitor, B Case
100B100CP 500X
ATC
C3, C13
1 µF, 50 V SMT Tantalum Capacitors
T494C105(1)050AS
Kemet
C4, C12
0.1 µF Chip Capacitors, B Case
CDR33BX104AKWS
Kemet
C5, C11
1k pF Chip Capacitors, B Case
100B102JP 500X
ATC
C6, C7
4.3 pF Chip Capacitors, B Case
100B4R3JP 500X
ATC
C8
10 µF, 35 V SMT Tantalum Capacitor
T494D106(1)035AS
Kemet
C9, C10
22 µF, 35 V SMT Tantalum Capacitors
T494X226(1)035AS
Kemet
C14
2.7 pF Chip Capacitor, B Case
100B2.7BP 500X
ATC
C15
0.6 – 4.5 Gigatrim Variable Capacitor
44F3358
Newark
R1
1 kW Chip Resistor
D5534M07B1K00R
Newark
R2
560 kW Chip Resistor
CR1206 564JT
Newark
R3, R4
12 W Chip Resistors
RM73B2B120JT
Garrett Electronics
W1
1 turn 14 gauge wire
MOTOROLA RF DEVICE DATA
MRF5S19090LR3 MRF5S19090LSR3
3
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Freescale Semiconductor, Inc.
RF
INPUT
Z1
DUT
Freescale Semiconductor, Inc.
C8
C13
C7
R1
R3
B1
W1
C6
C11
C12
R2 C3 C4C5
C14
Freescale Semiconductor, Inc.
ARCHIVE
INFORMATION
C15
C9
CUT OUT AREA
C1
VDD
R4
C10
C2
MRF5S19090
Rev 02
Figure 2. MRF5S19090 Test Circuit Component Layout
MRF5S19090LR3 MRF5S19090LSR3
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MOTOROLA RF DEVICE DATA
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VGG
Freescale Semiconductor, Inc.
Gps
η
30
VDD = 28 Vdc, Pout = 18 W (Avg.), IDQ = 850 mA
2−Carrier N−CDMA, 2.5 MHz Carrier Spacing
1.2288 MHz Channel Bandwidth
Peak/Avg. = 9.8 dB @ 0.01% Probability (CCDF)
12
10
IRL
20
−20
IM3
8
−40
−20
−30
−40
−50
f, FREQUENCY (MHz)
Figure 3. 2 - Carrier N - CDMA Broadband Performance
−15
IDQ = 1300 mA
16
15
1100 mA
850 mA
650 mA
14
13
450 mA
VDD = 28 Vdc
f1 = 1958.75 MHz, f2 = 1961.25 MHz
Two−Tone Measurement, 2.5 MHz Tone Spacing
12
1
10
IM3, THIRD ORDER
INTERMODULATION DISTORTION (dBc)
17
G ps , POWER GAIN (dB)
VDD = 28 Vdc
f1 = 1958.75 MHz, f2 = 1961.25 MHz
Two−Tone Measurement, 2.5 MHz Tone Spacing
−20
−25
−30
−35
IDQ = 450 mA
−40
1100 mA
1300 mA
−45
−50
850 mA
650 mA
−55
100
1
10
100
Pout, OUTPUT POWER (WATTS) PEP
Pout, OUTPUT POWER (WATTS) PEP
Figure 4. Two - Tone Power Gain versus
Output Power
Figure 5. Third Order Intermodulation Distortion
versus Output Power
−25
56
Ideal
55
−30
Pout , OUTPUT POWER (dBm)
ARCHIVE INFORMATION
−10
6
−60
1860 1880 1900 1920 1940 1960 1980 2000 2020 2040 2060 2080
IMD, INTERMODULATION DISTORTION (dBc)
Freescale Semiconductor, Inc.
ACPR
0
IM3 (dBc), ACPR (dBc)
G ps , POWER GAIN (dB)
14
3rd Order
−35
−40
5th Order
−45
7th Order
P3dB = 51.21 dBm (132.13 W)
54
53
P1dB = 50.82 dBm (120.78 W)
52
51
Actual
50
49
48
VDD = 28 Vdc, IDQ = 850 mA
Pulsed CW, 8 µsec(on), 1 msec(off)
Center Frequency = 1960 MHz
47
−50
VDD = 28 Vdc, Pout = 90 W (PEP), IDQ = 850 mA
Two−Tone Measurements, Center Frequency = 1960 MHz
−55
0.1
1
10
46
45
31
32
33
34
35
36
37
38
39
40
41
TWO−TONE SPACING (MHz)
Pin, INPUT POWER (dBm)
Figure 6. Intermodulation Distortion Products
versus Tone Spacing
Figure 7. Pulse CW Output Power versus
Input Power
MOTOROLA RF DEVICE DATA
42
MRF5S19090LR3 MRF5S19090LSR3
5
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40
η, DRAIN
EFFICIENCY (%)
16
IRL, INPUT RETURN LOSS (dB)
TYPICAL CHARACTERISTICS
Freescale Semiconductor, Inc.
40
−25
VDD = 28 Vdc, IDQ = 850 mA
f1 = 1958.75 MHz, f2 = 1961.25 MHz
2 x N−CDMA, 2.5 MHz @ 1.2288 MHz Bandwidth
Peak/Avg. = 9.8 dB @ 0.01% Probability (CCDF)
35
30
−30
η
25
−35
−40
IM3
20
−45
Gps
15
−50
η
10
−55
ACPR
5
−60
−65
1
10
Figure 8. 2 - Carrier N - CDMA ACPR, IM3, Power Gain
and Drain Efficiency versus Output Power
0
109
−10
MTBF FACTOR (HOURS x AMPS2 )
1.2288 MHz
Channel BW
−20
−IM3 @
1.2288 MHz
Integrated BW
−30
+IM3 @
1.2288 MHz
Integrated BW
−40
−50
−60
−70
−ACPR @ 30 kHz
Integrated BW
+ACPR @ 30 kHz
Integrated BW
−80
108
107
106
100
−90
120
140
160
180
200
220
TJ, JUNCTION TEMPERATURE (°C)
−100
−7.5
−6
−4.5
−3
−1.5
0
1.5
3
4.5
f, FREQUENCY (MHz)
Figure 9. 2 - Carrier N - CDMA Spectrum
6
7.5
This above graph displays calculated MTBF in hours x ampere2
drain current. Life tests at elevated temperatures have correlated to
better than ±10% of the theoretical prediction for metal failure. Divide
MTBF factor by ID2 for MTBF in a particular application.
Figure 10. MTBF Factor versus Junction Temperature
MRF5S19090LR3 MRF5S19090LSR3
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MOTOROLA RF DEVICE DATA
ARCHIVE INFORMATION
0
Pout, OUTPUT POWER (WATTS) AVG.
(dB)
Freescale Semiconductor, Inc.
ARCHIVE
INFORMATION
IM3
IM3 (dBc), ACPR (dBc)
η, DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB)
TYPICAL CHARACTERISTICS
Freescale Semiconductor, Inc.
f = 1990 MHz
Zo = 10 Ω
Zload*
f = 1930 MHz
f = 1990 MHz
ARCHIVE INFORMATION
Freescale Semiconductor, Inc.
ARCHIVE INFORMATION
Zsource
f = 1930 MHz
VDD = 28 V, IDQ = 850 mA, Pout = 18 W Avg.
f
MHz
Zsource
Ω
Zload
Ω
1930
2.98 - j5.12
2.07 - j1.31
1960
3.36 - j4.65
2.02 - j1.18
1990
4.06 - j4.64
1.93 - j1.01
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured
from drain to ground.
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
source
Z
load
Figure 11. Series Equivalent Input and Output Impedance
MOTOROLA RF DEVICE DATA
MRF5S19090LR3 MRF5S19090LSR3
7
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ARCHIVE INFORMATION
Freescale Semiconductor, Inc.
ARCHIVE
INFORMATION
NOTES
MRF5S19090LR3 MRF5S19090LSR3
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MOTOROLA RF DEVICE DATA
Freescale Semiconductor, Inc.
ARCHIVE INFORMATION
ARCHIVE INFORMATION
Freescale Semiconductor, Inc.
NOTES
MOTOROLA RF DEVICE DATA
MRF5S19090LR3 MRF5S19090LSR3
9
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ARCHIVE INFORMATION
Freescale Semiconductor, Inc.
ARCHIVE
INFORMATION
NOTES
MRF5S19090LR3 MRF5S19090LSR3
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MOTOROLA RF DEVICE DATA
Freescale Semiconductor, Inc.
PACKAGE DIMENSIONS
G
Q
bbb
2X
1
M
T A
M
B
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M−1994.
2. CONTROLLING DIMENSION: INCH.
3. DELETED
4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
M
3
B
K
2
(FLANGE)
D
bbb
M
T A
M
B
M
M
bbb
ARCHIVE INFORMATION
Freescale Semiconductor, Inc.
R
(INSULATOR)
N
M
T A
M
B
M
ccc
M
T A
S
(LID)
ccc
H
(LID)
B
M
M
T A
M
B
M
aaa
M
T A
M
(INSULATOR)
B
M
M
C
F
E
A
T
A
SEATING
PLANE
(FLANGE)
CASE 465 - 06
ISSUE F
NI - 780
MRF5S19090LR3
4X Z
(LID)
K
2X
2
B
D
bbb
M
T A
M
B
M
N
R
(LID)
ccc
M
M
T A
M
B
M
M
B
M
ccc
M
T A
M
aaa
M
T A
M
S
(INSULATOR)
bbb
M
T A
(LID)
B
M
(INSULATOR)
B
M
E
A
A
(FLANGE)
MOTOROLA RF DEVICE DATA
DIM
A
B
C
D
E
F
H
K
M
N
R
S
U
Z
aaa
bbb
ccc
INCHES
MIN
MAX
0.805
0.815
0.380
0.390
0.125
0.170
0.495
0.505
0.035
0.045
0.003
0.006
0.057
0.067
0.170
0.210
0.774
0.786
0.772
0.788
0.365
0.375
0.365
0.375
−−− 0.040
−−− 0.030
0.005 REF
0.010 REF
0.015 REF
MILLIMETERS
MIN
MAX
20.45
20.70
9.65
9.91
3.18
4.32
12.57
12.83
0.89
1.14
0.08
0.15
1.45
1.70
4.32
5.33
19.61
20.02
19.61
20.02
9.27
9.53
9.27
9.52
−−−
1.02
−−−
0.76
0.127 REF
0.254 REF
0.381 REF
STYLE 1:
PIN 1. DRAIN
2. GATE
5. SOURCE
H
C
3
MILLIMETERS
MIN
MAX
33.91
34.16
9.65
9.91
3.18
4.32
12.57
12.83
0.89
1.14
0.08
0.15
27.94 BSC
1.45
1.70
4.32
5.33
19.66
19.96
19.60
20.00
3.00
3.51
9.27
9.53
9.27
9.52
0.127 REF
0.254 REF
0.381 REF
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M−1994.
2. CONTROLLING DIMENSION: INCH.
3. DELETED
4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
1
(FLANGE)
INCHES
MIN
MAX
1.335
1.345
0.380
0.390
0.125
0.170
0.495
0.505
0.035
0.045
0.003
0.006
1.100 BSC
0.057
0.067
0.170
0.210
0.774
0.786
0.772
0.788
.118
.138
0.365
0.375
0.365
0.375
0.005 REF
0.010 REF
0.015 REF
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
4X U
(FLANGE)
B
DIM
A
B
C
D
E
F
G
H
K
M
N
Q
R
S
aaa
bbb
ccc
F
T
SEATING
PLANE
CASE 465A - 06
ISSUE F
NI - 780S
MRF5S19090LSR3
MRF5S19090LR3 MRF5S19090LSR3
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B
Information in this document is provided solely to enable system and software implementers to use Motorola products. There are no express or implied copyright
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters that may be provided in Motorola
data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including
“Typicals”, must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the
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owners. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.
E Motorola Inc. 2004
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MRF5S19090LR3 MRF5S19090LSR3
MOTOROLA RF DEVICE DATA
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MRF5S19090L/D