ONSEMI MC100LVEL05

SEMICONDUCTOR TECHNICAL DATA
The MC100LVEL05 is a 2-input differential AND/NAND gate. The
device is functionally equivalent to the MC100EL05 device and operates
from a 3.3V supply voltage. With propagation delays and output transition
times equivalent to the EL05, the LVEL05 is ideally suited for those
applications which require the ultimate in AC performance at low voltage
power supplies.
Because a negative 2-input NAND is equivalent to a 2-input OR
function, the differential inputs and outputs of the device allows the
LVEL05 to also be used as a 2-input differential OR/NOR gate.
•
•
•
•
340ps Propagation Delay
High Bandwidth Output Transitions
75kΩ Internal Input Pulldown Resistors
>2000V ESD Protection
D SUFFIX
8–LEAD PLASTIC SOIC PACKAGE
CASE 751-05
LOGIC DIAGRAM AND PINOUT ASSIGNMENT
D0 1
8 VCC
D0 2
7 Q
D1 3
6 Q
D1 4
5 VEE
PIN DESCRIPTION
PIN
FUNCTION
D0, D1
Q
Data Inputs
Data Outputs
1/97
 Motorola, Inc. 1997
3–1
REV 0
MC100LVEL05
DC CHARACTERISTICS (VEE = VEE(min) to VEE(max); VCC = GND)
–40°C
Symbol
Characteristic
IEE
Power Supply Current
VEE
Power Supply Voltage
IIH
Input HIGH Current
IIL
Input LOW Current
Min
0°C
Typ
Max
18
25
–3.0
–3.8
Min
Typ
Max
18
25
–3.0
–3.8
150
0.5
25°C
Min
Typ
Max
18
25
–3.0
–3.8
150
0.5
85°C
Min
Typ
Max
Unit
19
26
mA
–3.8
V
150
µA
–3.0
150
0.5
µA
0.5
AC CHARACTERISTICS (VEE = VEE(min) to VEE(max); VCC = GND)
–40°C
Symbol
Characteristic
0°C
Min
Typ
Max
Min
260
440
240
Typ
25°C
85°C
Max
Min
Typ
Max
Min
440
240
340
440
250
tPLH
tPHL
Propagation Delay to
Output
240
VPP
Minimum Input Swing
(Note 1.)
150
VCMR
Common Mode Range
(Note 2.) VPP < 500mV
VPP ≥ 500mV
–2.1
–1.9
–0.2
–0.2
–2.2
–2.0
–0.2
–0.2
–2.2
–2.0
tr
tf
Output Rise/Fall Times Q
(20% – 80%)
100
320
100
320
100
Typ
Max
Unit
ps
450
mV
150
150
150
V
–0.2
–0.2
–2.2
–2.0
–0.2
–0.2
320
100
320
ps
210
1. Minimum input swing for which AC parameters are guaranteed. The device has a DC gain of ≈40.
2. The CMR range is referenced to the most positive side of the differential input signal. Normal operation is obtained if the HIGH level falls within
the specified range and the peak-to-peak voltage lies between VPPmin and 1V. The lower end of the CMR range varies 1:1 with VEE. The number
in the spec table assumes a nominal VEE = –3.3V. Note for PECL operation, the VCMR(min) will be fixed at 3.3V – |VCMR(min)|.
MOTOROLA
3–2
ECLinPS and ECLinPS Lite
DL140 — Rev 3
MC100LVEL05
OUTLINE DIMENSIONS
D SUFFIX
PLASTIC SOIC PACKAGE
CASE 751–05
ISSUE R
D
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. DIMENSIONS ARE IN MILLIMETERS.
3. DIMENSION D AND E DO NOT INCLUDE MOLD
PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 PER SIDE.
5. DIMENSION B DOES NOT INCLUDE MOLD
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.127 TOTAL IN EXCESS
OF THE B DIMENSION AT MAXIMUM MATERIAL
CONDITION.
C
8
5
0.25
H
E
M
B
M
1
4
h
B
X 45 _
e
q
A
C
SEATING
PLANE
L
0.10
A1
B
0.25
M
C B
S
A
S
DIM
A
A1
B
C
D
E
e
H
h
L
q
MILLIMETERS
MIN
MAX
1.35
1.75
0.10
0.25
0.35
0.49
0.18
0.25
4.80
5.00
3.80
4.00
1.27 BSC
5.80
6.20
0.25
0.50
0.40
1.25
0_
7_
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◊
ECLinPS and ECLinPS Lite
DL140 — Rev 3
3–3
MC100LVEL05/D
MOTOROLA