HAT2169N Silicon N Channel Power MOS FET Power Switching Preliminary Rev.0.01 May.29.2005 Features • • • • • High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 3.1 mΩ typ. (at VGS = 10 V) Outline LFPAK-i 5 6 7 8 D D D D 2X XX 1(S) 2(S) 3(S) 4(G) 4 G 8(D) 7(D) 6(D) 5(D) 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain S S S 1 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Symbol VDSS Ratings 40 Unit V VGSS ID ±20 50 V A 200 50 A A 30 72 A mJ Note1 ID(pulse) IDR Note 2 Avalanche current Avalanche energy IAP Note 2 EAR Channel dissipation Channel to Case Thermal Resistance Pch θch-C 30 4.17 Tch Tstg 150 – 55 to + 150 Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tch = 25°C, Rg ≥ 50 Ω 3. Tc = 25°C Rev.0.01, May.29.2005, page 1 of 3 Note3 W °C/W °C °C HAT2169N Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Symbol V(BR)DSS Min 40 Typ — Max — Unit V Gate to source breakdown voltage Gate to source leak current V(BR)GSS IGSS ±20 — — — — ±10 V µA IG = ±100 µA, VDS = 0 VGS = ±16 V, VDS = 0 Zero gate voltage drain current Gate to source cutoff voltage IDSS VGS(off) — 1.0 — — 1 2.5 µA V VDS = 40 V, VGS = 0 VDS = 10 V, I D = 1 mA Static drain to source on state resistance RDS(on) RDS(on) — — 3.1 4.3 3.8 6.3 mΩ mΩ ID = 25 A, VGS = 10 V Note4 ID = 25 A, VGS = 4.5 V Forward transfer admittance Input capacitance |yfs| Ciss 39 — 65 6650 — — S pF ID = 25 A, VDS = 10 V Output capacitance Reverse transfer capacitance Coss Crss — — 890 360 — — pF pF Gate Resistance Total gate charge Rg Qg — — 0.5 45 — — Ω nc Gate to source charge Gate to drain charge Qgs Qgd — — 21 10 — — nc nc Turn-on delay time Rise time td(on) tr — — 15 64 — — ns ns Turn-off delay time Fall time td(off) tf — — 55 9.5 — — ns ns Body–drain diode forward voltage Body–drain diode reverse recovery time VDF trr — — 0.83 40 1.08 — V ns Notes: 4. Pulse test Rev.0.01, May.29.2005, page 2 of 3 Test Conditions ID = 10 mA, VGS = 0 Note4 Note4 VDS = 10 V VGS = 0 f = 1 MHz VDD = 10 V VGS = 4.5 V ID = 50 A VGS = 10 V, ID = 25 A VDD ≅ 10 V RL = 0.4 Ω Rg = 4.7 Ω Note4 IF = 50 A, VGS = 0 IF = 50 A, VGS = 0 diF/ dt = 100 A/ µs HAT2169N Package Dimensions Unit: mm 0.15 1.27 6 5 6.2MAX 3.95 2XX X (Laser Mark ) 1 2 3 1.2MAX 7 4 1.27 0.1MAX 5.3MAX 1.1MAX 0. 2 0. 5 8 0. 5 0.25 1.2MAX 0. 4 0. 4 0.15 Package Code JEDEC JEITA Mass (reference value) Rev.0.01, May.29.2005, page 3 of 3 LFPAK-i — — 0.080 g