2SK2174 L , 2SK2174 S Silicon N Channel MOS FET Application HDPAK 4 High speed power switching Features • • • • 4 1 2 Low on–resistance High speed switching No secondary breakdown Suitable for Switching regulator, DC – DC converter 3 2, 4 1 1 3 1. 2. 3. 4. 2 3 Gate Drain Source Drain Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS 500 V ——————————————————————————————————————————— Gate to source voltage VGSS ±30 V ——————————————————————————————————————————— Drain current ID 20 A ——————————————————————————————————————————— Drain peak current ID(pulse)* 80 A ——————————————————————————————————————————— Body–drain diode reverse drain current IDR 20 A ——————————————————————————————————————————— Channel dissipation Pch** 120 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at Tc = 25 °C 2SK2174 L , 2SK2174 S Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source breakdown voltage V(BR)DSS 500 — — V ID = 10 mA, VGS = 0 ——————————————————————————————————————————— Gate to source breakdown voltage V(BR)GSS ±30 — — V IG = ±100 µA, VDS = 0 ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±25 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — 250 µA VDS = 400 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) 2.0 — 3.0 V ID = 1 mA, VDS = 10 V ——————————————————————————————————————————— Static drain to source on state resistance RDS(on) — 0.22 0.27 Ω ID = 10 A VGS = 10 V * ——————————————————————————————————————————— Forward transfer admittance |yfs| 10 16 — S ID = 10 A VDS = 10 V * ——————————————————————————————————————————— Input capacitance Ciss — 2800 — pF VDS = 10 V ———————————————————————————————— Output capacitance Coss — 780 — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — 90 — pF f = 1 MHz ——————————————————————————————————————————— Turn–on delay time td(on) — 32 — ns ID = 10 A ———————————————————————————————— Rise time tr — 115 — ns ———————————————————————————————— Turn–off delay time td(off) — 200 — ns VGS = 10 V RL = 3 Ω ———————————————————————————————— Fall time tf — 90 — ns ——————————————————————————————————————————— Body–drain diode forward voltage VDF — 1.0 — V IF = 20 A, VGS = 0 ——————————————————————————————————————————— Body–drain diode reverse recovery time trr — 500 — µs IF = 20 A, VGS = 0, diF / dt = 100 A / µs ——————————————————————————————————————————— * Pulse Test ■ See characteristic curves of 2SK1170. 2SK2174 L , 2SK2174 S Power vs. Temperature Derating Channel Dissipation Pch (W) 160 120 80 40 0 50 100 Case Temperature 150 Tc (°C) 200