KSC2755 KSC2755 RF AMP, FOR VHF &TV TUNER • Low NF, High GPE • Forward AGC Capability to 30 dB • NF=2.0dB (TYP.), GPE=23dB (TYP.) at f=200MHz 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Value 30 Units V VCEO VEBO Collector-Emitter Voltage 30 V Emitter-Base Voltage 5 V IC Collector Current 20 mA PC Collector Power Dissipation 150 mW TJ Junction Temperature 150 °C TSTG Storage Temperature -55 ~ 150 °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol ICBO Parameter Collector Cut-off Current Test Condition VCB=20V, IE=0 Min. Typ. Max. 0.1 240 Units µA hFE DC Current Gain VCE=10V, IC=3mA 60 120 fT Current Gain Bandwidth Product VCE=10V, IC=3mA 400 600 CRE Reverse Transfer Capacitance f=1MHz, VCB=10V, IE=0 GPE Power Gain VCE=10V, IC=3mA f=200MHz IAGC AGC Current f=200MHz IE at GR= -30dB -10 -12 mA NF Noise Figure VCE=10V, IC=3mA f=200MHz 2.0 0.3 dB 0.3 20 MHz 0.5 23 pF dB hFE Classification Classification R O Y hFE 60 ~ 120 90 ~ 180 120 ~ 240 Marking H1 O hFE grade ©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002 KSC2755 Typical Characteristics IB = 120µA 10 1000 IB = 140µA VCE = 10V 8 IB = 80µA 6 IB = 60µA 4 IB = 40µA hFE, DC CURRENT GAIN IC[mA], COLLECTOR CURRENT IB = 100µA IB = 20µA 2 2 4 6 8 10 1 0.1 0 0 100 10 VCE[V], COLLECTOR-EMITTER VOLTAGE 100 Figure 2. DC Current Gain 10000 10000 IC = 10 IB VBE(sat)[mV], SATURATION VOLTAGE VCE(sat)[mV], SATURATION VOLTAGE 10 IC[mA], COLLECTOR CURRENT Figure 1. Static Characteristics 1000 100 10 0.1 1 10 IC = 10 IB 1000 100 0.1 100 IC[mA], COLLECTOR CURRENT 1 10 100 IC[mA], COLLECTOR CURRENT Figure 3. Collector-Emitter Saturation Voltage Figure 4. Base-Emitter Saturation Voltage 1000 10 VCE = 10 V 100 10 0.1 1 10 IC[mA], COLLECTOR CURRENT Figure 5. fT - IC ©2002 Fairchild Semiconductor Corporation 100 Cre[pF], REVERSE TRANSFER CAPACITANCE fT[MHz], CURRENT GAIN BANDWIDTH PRODUCT 1 f = 1 MHz IE = 0 1 0.1 1 10 100 VCB[V], COLLECTOR-BASE VOLTAGE Figure 6. Cre - VCB Rev. A2, September 2002 KSC2755 Typical Characteristics (Continued) 60 40 150 bie[ms], SUSCEPTANCE PC[mW], POWER DISSIPATION 200 100 50 IC=3mA 0 25 50 75 100 125 150 175 10mA 200MHz300MHz 400MHz f=100MHz 200MHz 0 300MHz -20 yid=gie + jbie VCE =10V -40 0 f=100MHz 5mA 20 400MHz -60 200 0 20 40 o 60 80 100 120 gie[ms], CONDUCTANCE Ta[ C], AMBIENT TEMPERATURE Figure 7. Power Derating Figure 8. yie - f 25 0.0 f=100MHz 0 bfe[ms], SUSCEPTANCE bre[ms], SUSCEPTANCE -0.4 IC=3mA 200MHz 5mA -0.8 300MHz 10mA -1.2 400MHz -1.6 -2.0 -0.1 yre=gre + jbre VCE =10V 400MHz 300MHz IC=10mA 0.1 0.2 0.3 400MHz 200MHz -25 0 25 50 75 100 gfe[ms], CONDUCTANCE Figure 10. yfe - f 5 20 35 NF : f=200MHz VCE=10V 18 3 400MHz 2 300MHz IC=3mA 5mA 200MHz 1 NF[dB], NOISE FIGURE yoe=goe + jboe VCE=10V Gpe 14 30 Gpe: f=200MHz 25 VCE=10V 16 20 12 15 10 10 8 5 6 0 4 f=100MHz 10mA 0.25 0.50 0.75 goe[ms], CONDUCTANCE Figure 11. yoe - f ©2002 Fairchild Semiconductor Corporation Gpe[dB], POWER GAIN boe[ms], SUSCEPTANCE 200MHz 100MHz 5mA 300MHz Figure 9. yre - f 0 0.00 300MHz yfe=gfe + jbfe VCE=10V gre[ms], CONDUCTANCE 4 3mA 400MHz -75 -125 -50 0.4 100MHz f=100MHz -50 -100 0.0 200MHz -25 -5 NF 2 1.00 1.25 -10 0 -15 0 2 4 6 8 10 IC[mA], COLLECTOR CURRENT Figure 12. Gpe, NF - IC Rev. A2, September 2002 KSC2755 Package Dimensions ±0.10 ±0.10 2.40 0.40 ±0.03 1.30 0.45~0.60 0.20 MIN SOT-23 0.03~0.10 0.38 REF 0.40 ±0.03 +0.05 0.12 –0.023 0.96~1.14 0.97REF 2.90 ±0.10 0.95 ±0.03 0.95 ±0.03 1.90 ±0.03 0.508REF Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ Bottomless™ FAST® FASTr™ CoolFET™ CROSSVOLT™ FRFET™ GlobalOptoisolator™ DOME™ EcoSPARK™ GTO™ E2CMOS™ HiSeC™ EnSigna™ I2C™ Across the board. Around the world.™ The Power Franchise™ Programmable Active Droop™ ImpliedDisconnect™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench® QFET™ QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ SILENT SWITCHER® SMART START™ SPM™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ TruTranslation™ UHC™ UltraFET® VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2002 Fairchild Semiconductor Corporation Rev. I1