Order this document by 2N3055A/D SEMICONDUCTOR TECHNICAL DATA !$"& %" "##$ "# . . . PowerBase complementary transistors designed for high power audio, stepping motor and other linear applications. These devices can also be used in power switching circuits such as relay or solenoid drivers, dc–to–dc converters, inverters, or for inductive loads requiring higher safe operating area than the 2N3055 and MJ2955. • Current–Gain — Bandwidth–Product @ IC = 1.0 Adc fT = 0.8 MHz (Min) – NPN = 2.2 MHz (Min) – PNP • Safe Operating Area — Rated to 60 V and 120 V, Respectively ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ *Motorola Preferred Device 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60, 120 VOLTS 115, 180 WATTS *MAXIMUM RATINGS Symbol 2N3055A MJ2955A MJ15015 MJ15016 Unit Collector–Emitter Voltage VCEO 60 120 Vdc Collector–Base Voltage VCBO 100 200 Vdc Collector–Emitter Voltage Base Reversed Biased VCEV 100 200 Vdc Emitter–Base Voltage VEBO 7.0 Vdc Collector Current — Continuous IC 15 Adc Base Current IB 7.0 Adc Total Device Dissipation @ TC = 25_C Derate above 25_C PD Rating Operating and Storage Junction Temperature Range TJ, Tstg 115 0.65 180 1.03 CASE 1–07 TO–204AA (TO–3) Watts W/_C _C – 65 to + 200 THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol Max Max Unit RθJC 1.52 0.98 _C/W PD(AV), AVERAGE POWER DISSIPATION (W) * Indicates JEDEC Registered Data. (2N3055A) 200 150 MJ15015 MJ15016 100 2N3055A MJ2955A 50 0 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (°C) 175 200 Figure 1. Power Derating Preferred devices are Motorola recommended choices for future use and best overall value. REV 1 Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data 1 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ v ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ v ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit VCEO(sus) 60 120 — — Vdc — — 0.7 0.1 — — 5.0 1.0 — — 30 6.0 — — 5.0 0.2 1.95 3.0 — — 10 20 5.0 70 70 — — — — 1.1 3.0 5.0 OFF CHARACTERISTICS (1) *Collector–Emitter Sustaining Voltage (IC = 200 mAdc, IB = 0) 2N3055A, MJ2955A MJ15015, MJ15016 Collector Cutoff Current (VCE = 30 Vdc, VBE(off) = 0 Vdc) (VCE = 60 Vdc, VBE(off) = 0 Vdc) 2N3055A, MJ2955A MJ15015, MJ15016 *Collector Cutoff Current (VCEV = Rated Value, VBE(off) = 1.5 Vdc) 2N3055A, MJ2955A MJ15015, MJ15016 Collector Cutoff Current (VCEV = Rated Value, VBE(off) = 1.5 Vdc, TC = 150_C) 2N3055A, MJ2955A MJ15015, MJ15016 Emitter Cutoff Current (VEB = 7.0 Vdc, IC = 0) 2N3055A, MJ2955A MJ15015, MJ15016 ICEO ICEV mAdc ICEV IEBO mAdc mAdc mAdc *SECOND BREAKDOWN Second Breakdown Collector Current with Base Forward Biased (t = 0.5 s non–repetitive) 2N3055A, MJ2955A (VCE = 60 Vdc) MJ15015, MJ15016 IS/b Adc *ON CHARACTERISTICS (1) DC Current Gain (IC = 4.0 Adc, VCE = 2.0 Vdc) (IC = 4.0 Adc, VCE = 4.0 Vdc) (IC = 10 Adc, VCE = 4.0 Vdc) hFE — Collector–Emitter Saturation Voltage (IC = 4.0 Adc, IB = 400 mAdc) (IC = 10 Adc, IB = 3.3 Adc) (IC = 15 Adc, IB = 7.0 Adc) VCE(sat) Vdc Base–Emitter On Voltage (IC = 4.0 Adc, VCE = 4.0 Vdc) VBE(on) 0.7 1.8 Vdc fT 0.8 2.2 6.0 18 MHz Cob 60 600 pF td — 0.5 µs tr — 4.0 µs ts — 3.0 µs tf — 6.0 µs *DYNAMIC CHARACTERISTICS Current–Gain — Bandwidth Product (IC = 1.0 Adc, VCE = 4.0 Vdc, f = 1.0 MHz) 2N3055A, MJ15015 MJ2955A, MJ15016 Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) *SWITCHING CHARACTERISTICS (2N3055A only) RESISTIVE LOAD Delay Time Rise Time Storage Time (VCC = 30 Vdc, IC = 4.0 Adc, IB1 = IB2 = 0.4 Adc, 2% tp = 25 µs Duty Cycle Fall Time (1) Pulse Test: Pulse Width = 300 µs, Duty Cycle * Indicates JEDEC Registered Data. (2N3055A) 2 2%. Motorola Bipolar Power Transistor Device Data VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS) 200 TJ = 150°C 100 hFE , DC CURRENT GAIN 70 50 – 55°C 30 20 25°C VCE = 4.0 V 10 7 5 3 2 0.2 0.3 0.5 0.7 1 2 3 5 IC, COLLECTOR CURRENT (AMP) 7 10 15 2.8 TJ = 25°C 2.4 2 IC = 1 A 1.6 0.8 0.4 0 0.005 0.01 0.02 V, VOLTAGE (VOLTS) 3 2.5 2 1.5 VBE(sat) @ IC/IB = 10 VBE(on) @ VCE = 4 V VCE(sat) @ IC/IB = 10 0.2 0.3 0.5 0.7 1 2 3 5 7 10 20 f T, CURRENT–GAIN — BANDWIDTH PRODUCT (MHz) TC = 25°C 0 2 5 MJ2955A MJ15016 5.0 2.0 2N3055A MJ15015 1.0 0.1 0.2 0.3 0.5 1.0 2.0 IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMPS) Figure 4. “On” Voltages Figure 5. Current–Gain — Bandwidth Product VCC + 30 V SCOPE 30 Ω 0 1N6073 –11 V t, TIME ( µs) 3 7.5 Ω 25 µs VCC = 30 V IC/IB = 10 TJ = 25°C 2 tr 1 0.7 0.5 0.3 0.2 tr, tf ≤ 10 ns DUTY CYCLE = 1.0% 1 10 10 7 5 +13 V 0.05 0.1 0.2 0.5 IB, BASE CURRENT (AMP) Figure 3. Collector Saturation Region 3.5 0.5 8A 1.2 Figure 2. DC Current Gain 1 4A –5 V Figure 6. Switching Times Test Circuit (Circuit shown is for NPN) Motorola Bipolar Power Transistor Device Data 0.1 td 0.2 0.3 5 0.5 0.7 1 2 3 IC, COLLECTOR CURRENT (AMP) 7 10 15 Figure 7. Turn–On Time 3 10 7 5 400 3 200 t, TIME ( µs) 2 C, CAPACITANCE (pF) TJ = 25°C ts tf 0.1 0.7 0.5 0.3 0.2 0.1 VCC = 30 IC/IB = 10 IB1 = IB2 TJ = 25°C 0.2 100 50 Cob 30 2 0.5 0.7 1 3 5 IC, COLLECTOR CURRENT (AMPS) 0.3 2N3055A MJ15015 MJ2955A MJ15016 Cib 7 10 20 1.0 15 2.0 5.0 10 20 50 100 200 VR, REVERSE VOLTAGE (VOLTS) Figure 8. Turn–Off Times 500 1000 Figure 9. Capacitances COLLECTOR CUT–OFF REGION NPN PNP 10,000 1000 VCE = 30 V 1000 IC, COLLECTOR CURRENT (µ A) IC, COLLECTOR CURRENT (µ A) VCE = 30 V 100 TJ = 150°C 10 100°C 1.0 IC = ICES REVERSE 0.1 FORWARD 100 10 TJ = 150°C 1.0 100°C IC = ICES 0.1 REVERSE 0.01 FORWARD 25°C 25°C 0.01 + 0.2 + 0.1 0 – 0.1 – 0.2 – 0.3 – 0.4 VBE, BASE–EMITTER VOLTAGE (VOLTS) – 0.5 0.001 – 0.2 Figure 10. 2N3055A, MJ15015 IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMPS) 0.1 ms 10 100 µs 1 ms 5 100 ms BONDING WIRE LIMIT THERMAL LIMIT @ TC = 25°C (SINGLE PULSE) SECOND BREAKDOWN LIMIT dc 10 20 60 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) 100 Figure 12. Forward Bias Safe Operating Area 2N3055A, MJ2955A There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe Operating area curves indicate IC – VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipa4 + 0.5 20 30 µs 1 0 + 0.1 + 0.2 + 0.3 + 0.4 VBE, BASE–EMITTER VOLTAGE (VOLTS) Figure 11. MJ2955A, MJ15016 20 2 – 0.1 10 5.0 1.0 ms 2.0 1.0 BONDING WIRE LIMIT THERMAL LIMIT @ TC = 25°C (SINGLE PULSE) SECOND BREAKDOWN LIMIT 0.5 0.2 15 100 ms dc 30 20 60 100 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) 120 Figure 13. Forward Bias Safe Operating Area MJ15015, MJ15016 tion than the curves indicate. The data of Figures 12 and 13 is based on TC = 25_C; TJ(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated for temperature according to Figure 1. Motorola Bipolar Power Transistor Device Data PACKAGE DIMENSIONS A N NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. ALL RULES AND NOTES ASSOCIATED WITH REFERENCED TO–204AA OUTLINE SHALL APPLY. C –T– E D K 2 PL 0.13 (0.005) U T Q M M Y M –Y– L V SEATING PLANE 2 H G B M T Y 1 –Q– 0.13 (0.005) M DIM A B C D E G H K L N Q U V INCHES MIN MAX 1.550 REF ––– 1.050 0.250 0.335 0.038 0.043 0.055 0.070 0.430 BSC 0.215 BSC 0.440 0.480 0.665 BSC ––– 0.830 0.151 0.165 1.187 BSC 0.131 0.188 MILLIMETERS MIN MAX 39.37 REF ––– 26.67 6.35 8.51 0.97 1.09 1.40 1.77 10.92 BSC 5.46 BSC 11.18 12.19 16.89 BSC ––– 21.08 3.84 4.19 30.15 BSC 3.33 4.77 STYLE 1: PIN 1. BASE 2. EMITTER CASE: COLLECTOR CASE 1–07 TO–204AA (TO–3) ISSUE Z Motorola Bipolar Power Transistor Device Data 5 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. 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Box 20912; Phoenix, Arizona 85036. 1–800–441–2447 JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, Toshikatsu Otsuki, 6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–3521–8315 MFAX: [email protected] – TOUCHTONE (602) 244–6609 INTERNET: http://Design–NET.com HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 6 ◊ Motorola Bipolar Power Transistor Device Data *2N3055A/D* 2N3055A/D