MJW21195 (PNP) MJW21196 (NPN) Preferred Devices Silicon Power Transistors The MJW21195 and MJW21196 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. http://onsemi.com • Total Harmonic Distortion Characterized • High DC Current Gain – • • hFE = 20 Min @ IC = 8 Adc Excellent Gain Linearity High SOA: 2.25 A, 80 V, 1 Second MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 250 Vdc Collector–Base Voltage VCBO 400 Vdc Emitter–Base Voltage VEBO 5.0 Vdc Collector–Emitter Voltage – 1.5 V VCEX 400 Vdc Collector Current – Continuous Collector Current – Peak (Note 1) IC 16 30 Adc Base Current – Continuous IB 5.0 Adc Total Power Dissipation @ TC = 25°C Derate Above 25°C PD 200 1.43 Watts W/°C TJ, Tstg – 65 to +150 °C Symbol Max Unit Thermal Resistance, Junction to Case RθJC 0.7 °C/W Thermal Resistance, Junction to Ambient RθJA 40 °C/W Operating and Storage Junction Temperature Range 16 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 250 VOLTS 200 WATTS 1 2 3 TO–247 CASE 340K STYLE 3 MARKING DIAGRAM THERMAL CHARACTERISTICS Characteristic MJW 2119x LLYWW 1 BASE 1. Pulse Test: Pulse Width = 5 s, Duty Cycle ≤ 10%. 3 EMITTER 2 COLLECTOR MJW2119x = Device Code x = 5 or 6 LL = Location Code Y = Year WW = Work Week ORDERING INFORMATION Device Package Shipping MJW21195 TO–247 30 Units/Rail MJW21196 TO–247 30 Units/Rail Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2002 March, 2002 – Rev. 1 1 Publication Order Number: MJW21195/D MJW21195 (PNP) MJW21196 (NPN) ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typical Max Unit VCEO(sus) 250 – – Vdc ICEO – – 100 µAdc Symbol Min Typical Max Unit Emitter Cutoff Current (VCE = 5 Vdc, IC = 0) IEBO – – 50 µAdc Collector Cutoff Current (VCE = 250 Vdc, VBE(off) = 1.5 Vdc) ICEX – – 50 µAdc 4.0 2.25 – – – – 20 8 – – 80 – – – 2.0 – – – – 1.0 3 OFF CHARACTERISTICS Collector–Emitter Sustaining Voltage (IC = 100 mAdc, IB = 0) Collector Cutoff Current (VCE = 200 Vdc, IB = 0) ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS SECOND BREAKDOWN IS/b Second Breakdown Collector Current with Base Forward Biased (VCE = 50 Vdc, t = 1 s (non–repetitive) (VCE = 80 Vdc, t = 1 s (non–repetitive) Adc ON CHARACTERISTICS hFE DC Current Gain (IC = 8 Adc, VCE = 5 Vdc) (IC = 16 Adc, IB = 5 Adc) Base–Emitter On Voltage (IC = 8 Adc, VCE = 5 Vdc) VBE(on) Collector–Emitter Saturation Voltage (IC = 8 Adc, IB = 0.8 Adc) (IC = 16 Adc, IB = 3.2 Adc) VCE(sat) Vdc Vdc DYNAMIC CHARACTERISTICS Total Harmonic Distortion at the Output VRMS = 28.3 V, f = 1 kHz, PLOAD = 100 WRMS (Matched pair hFE = 50 @ 5 A/5 V) THD % hFE unmatched hFE matched Current Gain Bandwidth Product (IC = 1 Adc, VCE = 10 Vdc, ftest = 1 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, ftest = 1 MHz) – 0.8 – – 0.08 – fT 4 – – MHz Cob – – 500 pF NPN MJW21196 6.0 F T, CURRENT BANDWIDTH PRODUCT (MHz) F T, CURRENT BANDWIDTH PRODUCT (MHz) PNP MJW21195 6.5 VCE = 10 V 5.5 5.0 VCE = 5 V 4.5 4.0 3.5 TJ = 25°C ftest = 1 MHz 3.0 2.5 2.0 0.1 1.0 10 7.5 7.0 6.5 6.0 5.5 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 VCE = 10 V VCE = 5 V TJ = 25°C ftest = 1 MHz 0.1 1.0 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) Figure 1. Typical Current Gain Bandwidth Product Figure 2. Typical Current Gain Bandwidth Product http://onsemi.com 2 10 MJW21195 (PNP) MJW21196 (NPN) TYPICAL CHARACTERISTICS PNP MJW21195 NPN MJW21196 1000 h FE , DC CURRENT GAIN h FE , DC CURRENT GAIN 1000 TJ = 100°C 100 25°C -25°C 10 VCE = 20 V 0.1 1.0 10 IC, COLLECTOR CURRENT (AMPS) 0.1 PNP MJW21195 NPN MJW21196 TJ = 100°C 25°C -25°C VCE = 5 V 0.1 1.0 10 IC, COLLECTOR CURRENT (AMPS) 25°C -25°C 10 100 TJ = 100°C 100 VCE = 5 V 0.1 Figure 5. DC Current Gain, VCE = 5 V PNP MJW21195 IC , COLLECTOR CURRENT (A) 2.0 A 1.5 A 20 1.0 A 15 IB = 0.5 A 10 5.0 TJ = 25°C 0 100 NPN MJW21196 30 25 1.0 10 IC, COLLECTOR CURRENT (AMPS) Figure 6. DC Current Gain, VCE = 5 V 30 IC , COLLECTOR CURRENT (A) 100 1000 100 0 1.0 10 IC, COLLECTOR CURRENT (AMPS) Figure 4. DC Current Gain, VCE = 20 V h FE , DC CURRENT GAIN h FE , DC CURRENT GAIN VCE = 20 V Figure 3. DC Current Gain, VCE = 20 V 1000 10 25°C -25°C 10 100 TJ = 100°C 100 5.0 10 15 20 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 1.5 A 25 1.0 A 20 IB = 0.5 A 15 10 5.0 0 25 2.0 A TJ = 25°C 0 Figure 7. Typical Output Characteristics 5.0 10 15 20 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 8. Typical Output Characteristics http://onsemi.com 3 25 MJW21195 (PNP) MJW21196 (NPN) TYPICAL CHARACTERISTICS PNP MJW21195 NPN MJW21196 1.4 TJ = 25°C IC/IB = 10 2.5 SATURATION VOLTAGE (VOLTS) SATURATION VOLTAGE (VOLTS) 3.0 2.0 1.5 VBE(sat) 1.0 0.5 0 1.0 VBE(sat) 0.8 0.6 0.4 VCE(sat) 0.2 VCE(sat) 0.1 TJ = 25°C IC/IB = 10 1.2 1.0 10 IC, COLLECTOR CURRENT (AMPS) 0 100 0.1 Figure 9. Typical Saturation Voltages 1.0 10 IC, COLLECTOR CURRENT (AMPS) Figure 10. Typical Saturation Voltages NPN MJW21196 10 VBE(on) , BASE-EMITTER VOLTAGE (VOLTS) VBE(on) , BASE-EMITTER VOLTAGE (VOLTS) PNP MJW21195 TJ = 25°C 1.0 VCE = 20 V VCE = 5 V 0.1 0.1 1.0 100 10 100 10 TJ = 25°C 1.0 VCE = 20 V VCE = 5 V 0.1 0.1 1.0 10 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) Figure 11. Typical Base–Emitter Voltage Figure 12. Typical Base–Emitter Voltage http://onsemi.com 4 100 MJW21195 (PNP) MJW21196 (NPN) The data of Figure 13 is based on TJ(pk) = 150°C; TC is variable depending on conditions. At high case temperatures, thermal limitations will reduce the power than can be handled to values less than the limitations imposed by second breakdown. There are two limitations on the power handling ability of a transistor; average junction temperature and secondary breakdown. Safe operating area curves indicate IC – VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. TYPICAL CHARACTERISTICS PNP MJW21195 NPN MJW21196 100 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) 100 10 ms 100 ms 10 1 Sec 1 0.1 10 ms 100 ms 10 1 Sec 1 0.1 1 10 100 1000 1 10 100 1000 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) Figure 13. Active Region Safe Operating Area Figure 14. Active Region Safe Operating Area http://onsemi.com 5 MJW21195 (PNP) MJW21196 (NPN) 10000 10000 C, CAPACITANCE (pF) Cib 1000 Cob 1000 TJ = 25°C ftest = 1 MHz TJ = 25°C ftest = 1 MHz 100 0.1 1.0 10 100 100 0.1 Cob 1.0 10 VR, REVERSE VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) Figure 15. MJW21195 Typical Capacitance Figure 16. MJW21196 Typical Capacitance 1.2 1.1 T , TOTAL HARMONIC HD DISTORTION (%) C, CAPACITANCE (pF) Cib 1.0 0.9 0.8 0.7 0.6 10 100 1000 10000 100000 FREQUENCY (Hz) Figure 17. Typical Total Harmonic Distortion +50 V AUDIO PRECISION MODEL ONE PLUS TOTAL HARMONIC DISTORTION ANALYZER SOURCE AMPLIFIER 50 Ω DUT 0.5 Ω 0.5 Ω DUT -50 V Figure 18. Total Harmonic Distortion Test Circuit http://onsemi.com 6 8.0 Ω 100 MJW21195 (PNP) MJW21196 (NPN) PACKAGE DIMENSIONS TO–247 CASE 340K–01 ISSUE C 0.25 (0.010) M –T– –Q– T B M E –B– C L U A R 1 K 2 3 –Y– P V H F D 0.25 (0.010) M 4 Y Q NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. J G DIM A B C D E F G H J K L P Q R U V MILLIMETERS MIN MAX 19.7 20.3 15.3 15.9 4.7 5.3 1.0 1.4 1.27 REF 2.0 2.4 5.5 BSC 2.2 2.6 0.4 0.8 14.2 14.8 5.5 NOM 3.7 4.3 3.55 3.65 5.0 NOM 5.5 BSC 3.0 3.4 STYLE 3: PIN 1. BASE 2. COLLECTOR 3. EMITTER S http://onsemi.com 7 INCHES MIN MAX 0.776 0.799 0.602 0.626 0.185 0.209 0.039 0.055 0.050 REF 0.079 0.094 0.216 BSC 0.087 0.102 0.016 0.031 0.559 0.583 0.217 NOM 0.146 0.169 0.140 0.144 0.197 NOM 0.217 BSC 0.118 0.134 MJW21195 (PNP) MJW21196 (NPN) ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. 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