ONSEMI NTMS4404NR2

NTMS4404N
Power MOSFET
30 V, 12 A, Single N−Channel, SO−8
Features
• High Density Power MOSFET with Ultra Low RDS(on) for Higher
•
•
•
Efficiency
Miniature SO−8 Surface Mount Package Saving Board Space
IDSS Specified at Elevated Temperature
Diode Exhibits High Speed, Soft Recovery
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V(BR)DSS
ID MAX
9.7 m @ 10 V
30 V
Applications
•
•
•
•
RDS(on) TYP
12 A
15.5 m @ 4.5 V
Power Management for Battery Power Products
Portable Products
Computers, Printers, PCMCIA Cards
Cell Phones, Cordless Telephones
N−Channel
D
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current (Note 1)
Symbol
Value
Unit
VDSS
30
V
VGS
20
V
ID
9.6
A
Steady
State
TA = 25°C
TA = 70°C
7.6
tp 10 s
TA = 25°C
12
Steady State
PD
tp 10 s
Continuous Drain
Current (Note 2)
Steady
State
Power Dissipation
(Note 2)
Pulsed Drain Current
TA = 25°C
MARKING DIAGRAM/
PIN ASSIGNMENT
W
1.56
ID
A
7.0
5.6
TA = 25°C
PD
0.83
W
tp = 10 s, DC = 2 %
IDM
50
A
TJ,
TSTG
−55 to
150
°C
IS
6.0
A
EAS
500
mJ
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche
Energy (VDD = 20 V, VGS = 5 V, IPK = 7.25 A,
L = 19 mH, RG = 25 )
260
°C
Symbol
Max
Unit
Junction−to−Ambient – Steady State (Note 1)
RJA
80
°C/W
Junction−to−Ambient – t = 1 0 s (Note 1)
RJA
50
Junction−to−Ambient – Steady State (Note 2)
RJA
150
THERMAL RESISTANCE RATINGS
Parameter
1
SO−8
CASE 751
STYLE 12
Source
Source
Source
Gate
8
Drain
Drain
Drain
Drain
Top View
E4404N = Device Code
L
= Assembly Location
Y
= Year
WW
= Work Week
ORDERING INFORMATION
Device
TL
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
1
2.5
TA = 70°C
Operating Junction and Storage Temperature
S
E4404N
LYWW
Power Dissipation
(Note 1)
G
NTMS4404NR2
Package
Shipping†
SO−8
2500/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
1. Surface−mounted on FR4 board using 1 in sq. pad size
(Cu area = 1.127 in sq. [1 oz] including traces)
2. Surface−mounted on FR4 board using the minimum recommended pad
size (Cu area = 0.412 in sq.)
 Semiconductor Components Industries, LLC, 2003
November, 2003 − Rev. 1
1
Publication Order Number:
NTMS4404N/D
NTMS4404N
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 A
30
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/
TJ
Typ
Max
Units
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
IDSS
V
25
VGS = 0 V
V, VDS = 30 V
mV/°C
TJ = 25°C
1.0
TJ = 100°C
5.0
IGSS
VDS = 0 V, VGS = 20 V
VGS(TH)
VGS = VDS, ID = 250 A
100
A
nA
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
Gate Threshold Temperature Coefficient
Drain−to−Source On Resistance
Forward Transconductance
VGS(TH)/TJ
RDS(on)
( )
1.0
2.2
3.0
−5.0
VGS = 10 V, ID = 12 A
9.7
11.5
VGS = 4.5 V, ID = 6.0 A
15.5
17.5
VDS = 15 V, ID = 12 A
17.5
gFS
V
mV/°C
m
S
CHARGES AND CAPACITANCES
pF
Input Capacitance
CISS
1975
2500
Output Capacitance
COSS
575
750
Reverse Transfer Capacitance
CRSS
180
300
Total Gate Charge
QG(TOT)
50
70
nC
Threshold Gate Charge
QG(TH)
15
25
ns
25
50
35
55
15
30
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
VGS = 0 V,, f = 1 MHz,, VDS = 24 V
2.4
VGS = 10 V
V, VDS = 24 V
V, ID = 12 A
7.5
16
SWITCHING CHARACTERISTICS, VGS = 10 V (Note 4)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
td(ON)
tr
td(OFF)
VGS = 10 V, VDS = 24 V, ID = 12 A,
RG = 2.5 tf
SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 4)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
td(ON)
20
tr
80
td(OFF)
VGS = 4.5 V, VDS = 24 V, ID = 6.0 A,
RG = 2.5 tf
ns
25
15
DRAIN−SOURCE DIODE CHARACTERISTICS (Note 4)
Forward Diode Voltage
Reverse Recovery Time
VSD
TJ = 25°C
0.80
TJ = 125°C
0.65
tRR
Charge Time
ta
Discharge Time
tb
Reverse Recovery Charge
VGS = 0 V
V, IS = 6
6.0
0A
40
VGS = 0 V, dISD/dt = 100 A/s,
IS = 6.0 A
QRR
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2
V
55
ns
23
17
0.05
NOTES:
3. Pulse Test: pulse width 300 s, duty cycle 2%.
4. Switching characteristics are independent of operating junction temperatures.
1.1
C
NTMS4404N
TYPICAL PERFORMANCE CURVES
24
VGS = 10 V to 4.2 V
VDS ≥ 10 V
4V
ID, DRAIN CURRENT (AMPS)
ID, DRAIN CURRENT (AMPS)
24
20
TJ = 25°C
16
3.8 V
12
3.6 V
8
3.4 V
4
16
12
TJ = 25°C
8
0
TJ = −55°C
0
0
2
6
4
10
8
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
4
3
5
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
RDS(on), DRAIN−TO−SOURCE RESISTANCE ()
2
0.05
ID = 12 A
TJ = 25°C
0.04
0.03
0.02
0.01
0
2
4
6
5
7
8
9
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
3
10
6
0.025
TJ = 25°C
0.02
VGS = 4.5 V
0.015
VGS = 10 V
0.01
0.005
0
6
8
10
12
14
16
18
20
22
24
ID, DRAIN CURRENT (AMPS)
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
1.6
10000
VGS = 0 V
ID = 12 A
VGS = 10 V
1.4
IDSS, LEAKAGE (A)
RDS(on), DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
TJ = 100°C
4
3.0 V
3.2 V
RDS(on), DRAIN−TO−SOURCE RESISTANCE ()
20
TJ = 150°C
1000
1.2
1
100
TJ = 100°C
0.8
0.6
−50
10
−25
0
25
50
75
100
125
150
5
10
15
20
25
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
30
NTMS4404N
TYPICAL PERFORMANCE CURVES
C, CAPACITANCE (pF)
TJ = 25°C
4000 Ciss
30
QT
VDS
10
3000 C
rss
Ciss
2000
1000
Coss
Crss
0
10
5
0
VGS
5
10
15
20
20
VGS
5
QGS
0
0
30
10
20
40
QG, TOTAL GATE CHARGE (nC)
VDS
Figure 7. Capacitance Variation
12
VDD = 24 V
ID = 12 A
VGS = 10 V
IS, SOURCE CURRENT (AMPS)
1000
td(off)
tf
tr
100
td(on)
10
1
10
RG, GATE RESISTANCE (OHMS)
VGS = 0 V
TJ = 25°C
10
8
6
4
2
0
0.5
100
Figure 9. Resistive Switching Time
Variation vs. Gate Resistance
0.7
0.6
0.8
VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 10. Diode Forward Voltage vs. Current
100
ID, DRAIN CURRENT (AMPS)
t, TIME (ns)
0
50
Figure 8. Gate−To−Source and
Drain−To−Source Voltage vs. Total Charge
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
1
10
QGD
ID = 12 A
TJ = 25°C
30
25
VDS , DRAIN−TO−SOURCE VOLTAGE (VOLTS)
VGS = 0 V
VDS = 0 V
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
15
5000
10 ms
100 s
1 ms
10
dc
1
VGS = 10 V
SINGLE PULSE
TC = 25°C
0.1
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.01
0.1
1
10
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
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4
100
0.9
NTMS4404N
Rthja(t), EFFECTIVE TRANSIENT
THERMAL RESISTANCE
1000
DUTY CYCLE
100
MOUNTED TO MINIMUM RECOMMENDED FOOTPRINT
D = 0.5
0.2
0.1
0.05
10
0.02
0.01
P(pk)
1
t1
t2
DUTY CYCLE, D = t1/t2
SINGLE PULSE
0.1
1E−05
1E−04
1E−03
1E−02
1E−01
t, TIME (seconds)
1E+00
Figure 12. Thermal Response − Various Duty Cycles
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5
RθJA(t) = r(t) RθJA
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) − TA = P(pk) RθJA(t)
1E+01
1E+02
1E+03
NTMS4404N
PACKAGE DIMENSIONS
SOIC−8 NB
CASE 751−07
ISSUE AA
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A AND B DO NOT INCLUDE MOLD
PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER
SIDE.
5. DIMENSION D DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN
EXCESS OF THE D DIMENSION AT MAXIMUM
MATERIAL CONDITION.
6. 751−01 THRU 751−06 ARE OBSOLETE. NEW
STANDARD IS 751−07.
−X−
A
8
5
S
B
1
0.25 (0.010)
M
Y
M
4
K
−Y−
G
C
N
X 45 SEATING
PLANE
−Z−
0.10 (0.004)
H
M
D
0.25 (0.010)
M
Z Y
S
X
J
S
DIM
A
B
C
D
G
H
J
K
M
N
S
MILLIMETERS
MIN
MAX
4.80
5.00
3.80
4.00
1.35
1.75
0.33
0.51
1.27 BSC
0.10
0.25
0.19
0.25
0.40
1.27
0
8
0.25
0.50
5.80
6.20
STYLE 12:
PIN 1.
2.
3.
4.
5.
6.
7.
8.
INCHES
MIN
MAX
0.189
0.197
0.150
0.157
0.053
0.069
0.013
0.020
0.050 BSC
0.004
0.010
0.007
0.010
0.016
0.050
0
8
0.010
0.020
0.228
0.244
SOURCE
SOURCE
SOURCE
GATE
DRAIN
DRAIN
DRAIN
DRAIN
ON Semiconductor and
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NTMS4404N/D