NTMS4873NF Power MOSFET 30 V, 11.5 A, N−Channel, SO−8 Features • • • • • • Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Includes SyncFET Schottky Diode Optimized Gate Charge to Minimize Switching Losses SOIC−8 Surface Mount Package Saves Board Space This is a Pb−Free Device http://onsemi.com V(BR)DSS RDS(ON) MAX 12 mW @ 10 V 30 V Applications N−Channel MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Drain−to−Source Voltage Gate−to−Source Voltage Symbol Value Unit VDSS 30 V VGS ±20 V ID 8.9 A Continuous Drain Current RqJA (Note 1) TA = 25°C Power Dissipation RqJA (Note 1) TA = 25°C PD 1.39 W Continuous Drain Current RqJA (Note 2) TA = 25°C ID 7.1 A PD 0.87 Steady State ID W TA = 25°C Power Dissipation RqJA, t v 10 s(Note 1) TA = 25°C PD TA = 25°C, tp = 10 ms IDM 56 A TJ, Tstg −55 to 150 °C TA = 70°C Operating Junction and Storage Temperature 11.5 A 9.2 Source Current (Body Diode) Single Pulse Drain−to−Source Avalanche Energy (TJ = 25°C, VDD = 30 V, VGS = 10 V, IL = 11 Apk, L = 1 mH, RG = 25 W) 2.31 W IS 3.3 A EAS 60.5 mJ Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) 260 °C TL Symbol Value Unit Junction−to−Ambient – Steady State (Note 1) RqJA 89.9 °C/W Junction−to−Ambient – t v 10 s (Note 1) RqJA 54.2 Junction−to−Foot (Drain) RqJF 35.6 Junction−to−Ambient – Steady State (Note 2) RqJA 143 THERMAL RESISTANCE MAXIMUM RATINGS Parameter S MARKING DIAGRAM/ PIN ASSIGNMENT 5.7 Continuous Drain Current RqJA, t v 10 s (Note 1) Pulsed Drain Current G 7.2 TA = 70°C TA = 25°C D 1 SO−8 CASE 751 STYLE 12 Source Source Source Gate 1 8 4873NF AYWWG G Power Dissipation RqJA (Note 2) TA = 70°C 11.5 A 15 mW @ 4.5 V • Synchronous FET for DC−DC Converters • Low Side Notebook Non−VCORE Converters Parameter ID MAX Drain Drain Drain Drain Top View 4873NF = Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device NTMS4873NFR2G Package Shipping† SO−8 2500/Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surfacemounted on FR4 board using 1 sq−in pad, 2 oz Cu. 2. Surfacemounted on FR4 board using the minimum recommended pad size. © Semiconductor Components Industries, LLC, 2009 January, 2009 − Rev. 1 1 Publication Order Number: NTMS4873NF/D NTMS4873NF ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 30 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ Typ Max Unit OFF CHARACTERISTICS V 10 Zero Gate Voltage Drain Current IDSS Gate−to−Source Leakage Current IGSS VGS = 0 V, VDS = 24 V VDS = 0 V, VGS = ±20 V TJ = 25°C VGS(TH) VGS = VDS, ID = 250 mA mV/°C 250 mA ±100 nA 2.5 V ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Negative Threshold Temperature Coefficient VGS(TH)/TJ Drain−to−Source On Resistance RDS(on) Forward Transconductance 1.45 6 gFS mV/°C VGS = 10 V, ID = 10 A 9 12 VGS = 4.5 V, ID = 8.5 A 12 15 VDS = 1.5 V, ID = 10 A 22 mW S CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance VGS = 0 V, f = 1.0 MHz, VDS = 15 V 1275 1900 345 525 Crss 145 225 Total Gate Charge QG(TOT) 10.5 16 Threshold Gate Charge QG(TH) Gate−to−Source Charge QGS Gate−to−Drain Charge QGD Total Gate Charge QG(TOT) VGS = 4.5 V, VDS = 15 V, ID = 10 A VGS = 10 V, VDS = 15 V, ID = 10 A pF nC 1.3 3.7 6.0 3.9 6.5 21.4 32 nC 9.8 16 ns SWITCHING CHARACTERISTICS (Note 4) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(on) tr td(off) 3.8 7.0 22.3 45 14.3 25 TJ = 25°C 0.55 0.7 V TJ = 125°C 0.5 20 35 ns 9.5 15 VGS = 10 V, VDS = 15 V, ID = 1.0 A, RG = 6.0 W tf DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time Charge Time Discharge Time VSD VGS = 0 V, IS = 3.5 A tRR ta 10.6 20 QRR 9.0 14 Source Inductance LS 0.66 nH Drain Inductance LD 0.20 nH Gate Inductance LG 1.5 nH Gate Resistance RG Reverse Recovery Charge tb VGS = 0 V, dIS/dt = 100 A/ms, IS = 10 A nC PACKAGE PARASITIC VALUES TA = 25°C 1.5 3. Pulse Test: pulse width = 300 ms, duty cycle v 2%. 4. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 3.0 W NTMS4873NF TYPICAL CHARACTERISTICS ID, DRAIN CURRENT (A) 20 VDS ≥ 10 V VGS = 3.2 V 3.5 V 15 3V 10 2.8 V 5 2.6 V 2.4 V 0 0.5 1.0 1.5 2.0 TJ = 125°C 1 1.5 2 2.5 3 3.5 4 Figure 2. Transfer Characteristics 0.025 0.015 4 5 6 7 8 9 10 VGS, GATE−TO−SOURCE VOLTAGE (V) 4.5 0.015 TJ = 25°C VGS = 4.5 V 0.013 0.011 0.009 VGS = 10 V 0.007 0.005 2.5 7.5 12.5 17.5 22.5 ID, DRAIN CURRENT (A) Figure 3. On−Resistance vs. Gate−to−Source Voltage Figure 4. On−Resistance vs. Drain Current and Gate Voltage 100 M 1.5 ID = 11.5 V VGS = 10 V VGS = 0 V 1.3 IDSS, LEAKAGE (nA) RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) TJ = −55°C Figure 1. On−Region Characteristics 0.035 1.4 TJ = 25°C 10 VGS, GATE−TO−SOURCE VOLTAGE (V) ID = 10 A 3 20 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 0.045 0.005 30 0 2.5 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 40 5V 4.5 V 4.2 V 4V 10 V ID, DRAIN CURRENT (A) 25 TJ = 125°C 10 M 1.2 1.1 1.0 0.9 TJ = 100°C 1M 0.8 0.7 −50 −25 0 25 50 75 100 125 150 0.1 M 2.5 TJ, JUNCTION TEMPERATURE (°C) 7.5 12.5 17.5 22.5 27.5 VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage http://onsemi.com 3 NTMS4873NF TYPICAL CHARACTERISTICS 1750 C, CAPACITANCE (pF) VGS, GATE−TO−SOURCE VOLTAGE (V) VGS = 0 V TJ = 25°C 1500 Ciss 1250 1000 750 500 Coss 250 Crss 0 0 5 10 15 20 25 30 4 2 0 ID = 10 A TJ = 25°C 0 4 8 12 16 20 Figure 8. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge 6 IS, SOURCE CURRENT (A) t, TIME (ns) Qgd Figure 7. Capacitance Variation td(off) tf tr 10 td(on) 1 10 VGS = 0 V TJ = 25°C 5 4 3 2 1 0 100 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 RG, GATE RESISTANCE (W) VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current EAS, SINGLE PULSE DRAIN−TO− SOURCE AVALANCHE ENERGY (mJ) 100 10 ms −ID, DRAIN CURRENT (A) Qgs Qg, TOTAL GATE CHARGE (nC) 100 100 ms 10 1 ms 1 0.01 VGS 6 VDS, DRAIN−TO−SOURCE VOLTAGE (V) VDD = 15 V ID = 1 A VGS = 10 V 0.1 QT 8 1000 1 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 10 2000 10 ms VGS = 20 V Single Pulse TC = 25°C RDS(on) Limit Thermal Limit Package Limit 0.1 1 dc 10 100 60 ID = 11 A 50 40 30 20 10 0 25 50 75 100 125 −VDS, DRAIN−TO−SOURCE VOLTAGE (V) TJ, STARTING JUNCTION TEMPERATURE (°C) Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. Maximum Avalanche Energy vs. Starting Junction Temperature http://onsemi.com 4 150 NTMS4873NF TYPICAL CHARACTERISTICS R(t) (°C/W) 100 50% Duty Cycle 20% 10 10% 5% 2% 1 1% 0.1 0.01 Single Pulse 0.001 0.0000001 0.000001 0.00001 0.0001 0.01 0.001 0.1 1 PULSE TIME (sec) Figure 13. Thermal Response − RqJA at Steady State (1 inch sq pad) http://onsemi.com 5 10 100 1000 NTMS4873NF PACKAGE DIMENSIONS SOIC−8 CASE 751−07 ISSUE AJ −X− NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. 751−01 THRU 751−06 ARE OBSOLETE. NEW STANDARD IS 751−07. A 8 5 S B 0.25 (0.010) M Y M 1 4 −Y− K G C N DIM A B C D G H J K M N S X 45 _ SEATING PLANE −Z− 0.10 (0.004) H D 0.25 (0.010) M Z Y S X M J S SOLDERING FOOTPRINT* INCHES MIN MAX 0.189 0.197 0.150 0.157 0.053 0.069 0.013 0.020 0.050 BSC 0.004 0.010 0.007 0.010 0.016 0.050 0 _ 8 _ 0.010 0.020 0.228 0.244 STYLE 12: PIN 1. SOURCE 2. SOURCE 3. SOURCE 4. GATE 5. DRAIN 6. DRAIN 7. DRAIN 8. DRAIN 1.52 0.060 7.0 0.275 MILLIMETERS MIN MAX 4.80 5.00 3.80 4.00 1.35 1.75 0.33 0.51 1.27 BSC 0.10 0.25 0.19 0.25 0.40 1.27 0_ 8_ 0.25 0.50 5.80 6.20 4.0 0.155 0.6 0.024 1.270 0.050 SCALE 6:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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