ONSEMI NTS4173PT1G

NTS4173P
Power MOSFET
−30 V, −1.3 A, Single P−Channel, SC−70
Features
•
•
•
•
•
−30 V BVds, Low RDS(on) in SC−70 Package
Low Threshold Voltage
Fast Switching Speed
This is a Halide−Free Device
This is a Pb−Free Device
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V(BR)DSS
Applications
−30 V
• Load Switch
• Low Current Inverter and DC−DC Converters
• Power Switch for Printers, Communication Equipment
RDS(on) MAX
ID MAX
150 mW @ −10 V
−1.2 A
200 mW @ −4.5 V
−1.0 A
280 mW @ −2.5 V
−0.9 A
SC−70/SOT−323 (3 LEADS)
S
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
−30
V
Gate−to−Source Voltage
VGS
±12
V
ID
Continuous Drain
Current (Note 1)
Power Dissipation
(Note 1)
Steady
State
TA = 25°C
−1.2
TA = 85°C
−0.80
t≤5s
TA = 25°C
Steady
State
A
D
−1.3
0.29
TA = 25°C
W
1
0.35
IDM
−5.0
A
TJ,
Tstg
−55 to
150
°C
Source Current (Body Diode)
IS
−1.0
A
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
TL
260
°C
tp = 10 ms
Operating Junction and Storage Temperature
MARKING DIAGRAM/
PIN ASSIGNMENT
3
PD
t≤5s
Pulsed Drain Current
G
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL RESISTANCE RATINGS
3 Drain
2
SC−70/SOT−323
CASE 419
STYLE 8
TGMG
G
1
Gate
2
Source
TG
= Specific Device Code
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Symbol
Max
Unit
Device
Package
Shipping†
Junction−to−Ambient − Steady State (Note 1)
RqJA
425
°C/W
NTS4173PT1G
3000/Tape & Reel
Junction−to−Ambient − t ≤ 5 s (Note 1)
RqJA
360
SC−70
(Pb−Free)
Parameter
1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq
[2 oz] including traces)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
* Date code orientation may vary depending upon
manufacturing location
© Semiconductor Components Industries, LLC, 2008
September, 2008 − Rev. 0
1
Publication Order Number:
NTS4173P/D
NTS4173P
MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Typ
Max
Units
V(BR)DSS
VGS = 0 V, ID = −250 mA
−30
Zero Gate Voltage Drain Current
IDSS
VGS = 0 V, VDS = −24 V, TJ = 25°C
VGS = 0 V, VDS = −24 V, TJ = 85°C
−1.0
−5.0
mA
Gate−to−Source Leakage Current
IGSS
VDS = 0 V, VGS = "12 V
±0.1
mA
Gate Threshold Voltage
VGS(TH)
VGS = VDS, ID = −250 mA
−1.15
−1.5
V
Drain−to−Source On−Resistance
RDS(on)
VGS = −10 V, ID = −1.2 A
90
150
mW
VGS = −4.5 V, ID = −1.0 A
110
200
VGS = −2.5 V, ID = −0.9 A
165
280
VDS = −5 V, ID = −1.2 A
3.6
S
430
pF
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
ON CHARACTERISTICS (Note 3)
Forward Transconductance
gFS
−0.7
CHARGES, CAPACITANCES AND GATE RESISTANCE
Ciss
Input Capacitance
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
VGS = 0 V, f = 1.0 MHz,
VDS = −15 V
55
40
Total Gate Charge
QG(TOT)
Threshold Gate Charge
QG(TH)
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
1.5
Total Gate Charge
QG(TOT)
10.1
Threshold Gate Charge
QG(TH)
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
nC
4.8
VGS = −4.5 V, VDS = −15 V,
ID = −1.2 A
VGS = −10 V, VDS = −15 V,
ID = −1.2 A
0.6
1.1
nC
0.6
1.1
1.5
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
td(on)
tr
td(off)
VGS = −4.5 V, VDS = −15 V,
ID = −1.2 A, RG = 3 W
5.2
16.2
tf
6.7
td(on)
5.3
tr
td(off)
ns
7.7
VGS = −10 V, VDS = −15 V,
ID = −1.2 A, RG = 3 W
tf
ns
6.7
19.9
7.1
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
VSD
Reverse Recovery Time
tRR
Charge Time
ta
Discharge Time
tb
Reverse Recovery Charge
VGS = 0 V, IS = −1.0 A
−0.8
12
VDS = 20 V, VGS = 0 V, IS = −1.0 A,
dISD/dt = 100 A/ms
QRR
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2
V
ns
10
2.0
7.0
2. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces)
3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%
4. Switching characteristics are independent of operating junction temperatures
−1.0
nC
NTS4173P
TYPICAL CHARACTERISTICS
5.0
−4.5 V
TJ = 25°C
−3.0 V
3.5
−2.4 V
3.0
2.5
−2.2 V
2.0
1.5
−2.0 V
1.0
0.5
0
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
−ID, DRAIN CURRENT (A)
4.0
VDS ≥ −10 V
−2.6 V
−1.8 V
0
0.5
1.0
1.5
2.0
2.5
2.0
TJ = 125°C
1.0
TJ = 25°C
0.15
0.10
2.25
2.5
2.75
3
4
5
6
7
8
9
10
−VGS, GATE−TO−SOURCE VOLTAGE (V)
3.0
0.30
TJ = 25°C
0.25
VGS = −2.2 V
0.20
VGS = −2.5 V
0.15
VGS = −4.5 V
0.10
0.05
0.0
VGS = −10 V
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
−ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Gate Voltage
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
1000
1.6
VGS = −10 V
ID = −1.2 A
TJ = 150°C
−IDSS, LEAKAGE (nA)
RDS(on), DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
2.0
Figure 2. Transfer Characteristics
0.20
1.4
1.75
1.5
Figure 1. On−Region Characteristics
0.25
1.5
TJ = −55°C
1.25
−VGS, GATE−TO−SOURCE VOLTAGE (V)
TJ = 25°C
ID = −1.2 A
2
3.0
−VDS, DRAIN−TO−SOURCE VOLTAGE (V)
0.30
0.05
4.0
0
1.0
3.0
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
−ID, DRAIN CURRENT (A)
5.0
−10 V
4.5
1.3
1.2
1.1
1.0
0.9
0.8
100
TJ = 125°C
10
TJ = 85°C
0.7
0.6
−50
−25
0
25
50
75
100
125
150
1
0
TJ, JUNCTION TEMPERATURE (°C)
5
10
15
20
25
−VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
30
NTS4173P
VGS = 0 V
TJ = 25°C
f = 1 MHz
C, CAPACITANCE (pF)
500
Ciss
400
300
200
Coss
100
0
Crss
0
10
5
15
20
30
25
12
14
10
VDS
8
6
4
8
6
Qgs
Qgd
0
0
2
4
6
8
2
10
0
QG, TOTAL GATE CHARGE (nC)
Figure 8. Gate−to−Source Voltage vs. Total
Charge
100
10
VGS = −4.5 V
VDD = −15 V
ID = −1.2 A
−IS, SOURCE CURRENT (A)
td(off)
tf
tr
10
td(on)
1.0
10
TJ = 150°C
1.0
25°C
125°C
0.1
0.3
100
0.4
0.5
0.6
0.7
0.8
TJ = −55°C
0.9
1.0
1.1
1.2
RG, GATE RESISTANCE (W)
−VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
20
1.4
ID = −250 mA
1.3
18
16
1.2
14
POWER (W)
t, TIME (ns)
4
VDS = −15 V
ID = −1.2 A
TJ = 25°C
2
Figure 7. Capacitance Variation
−VGS(th), GATE−TO−SOURCE VOLTAGE (V)
12
VGS
10
−VDS, DRAIN−TO−SOURCE VOLTAGE (V)
1.0
16
QT
−VDS, DRAIN−TO−SOURCE VOLTAGE (V)
600
−VGS, GATE−TO−SOURCE VOLTAGE (V)
TYPICAL CHARACTERISTICS
1.1
1.0
10
8
6
0.9
4
0.8
0.7
−50
12
2
−25
0
25
50
75
100 125
TJ, JUNCTION TEMPERATURE (°C)
0
0.0001
150
Figure 11. Threshold Voltage
0.001
0.01
0.1
1
10
SINGLE PULSE TIME (s)
100
Figure 12. Single Pulse Maximum Power
Dissipation
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4
1000
NTS4173P
TYPICAL PERFORMANCE CURVES
−ID, DRAIN CURRENT (A)
10
10 ms
1.0
100 ms
1 ms
VGS = −12 V
SINGLE PULSE
TC = 25°C
0.1
10 ms
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.01
0.1
dc
10
1.0
−VDS, DRAIN−TO−SOURCE VOLTAGE (V)
100
R(t), EFFECTIVE TRANSIENT THERMAL
RESPONSE (NORMALIZED)
Figure 13. Maximum Rated Forward Biased
Safe Operating Area
1.0
0.5
0.2
0.1
0.1
0.05
0.02
0.01
Single Pulse
0.01
0.0001
0.001
0.01
0.1
1.0
t, TIME (SECONDS)
Figure 14. FET Thermal Response
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5
10
100
1000
NTS4173P
PACKAGE DIMENSIONS
D
SC−70 (SOT−323)
CASE 419−04
ISSUE M
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
e1
3
E
HE
1
DIM
A
A1
A2
b
c
D
E
e
e1
L
HE
2
b
e
A
0.05 (0.002)
c
A2
0.30
0.10
1.80
1.15
1.20
2.00
MILLIMETERS
NOM
MAX
0.90
1.00
0.05
0.10
0.7 REF
0.35
0.40
0.18
0.25
2.10
2.20
1.24
1.35
1.30
1.40
0.65 BSC
0.425 REF
2.10
2.40
MIN
0.032
0.000
0.012
0.004
0.071
0.045
0.047
0.079
INCHES
NOM
0.035
0.002
0.028 REF
0.014
0.007
0.083
0.049
0.051
0.026 BSC
0.017 REF
0.083
MAX
0.040
0.004
0.016
0.010
0.087
0.053
0.055
0.095
STYLE 8:
PIN 1. GATE
2. SOURCE
3. DRAIN
L
A1
MIN
0.80
0.00
SOLDERING FOOTPRINT*
0.65
0.025
0.65
0.025
1.9
0.075
0.9
0.035
0.7
0.028
SCALE 10:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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NTS4173P/D