NUP2301MW6T1 Low Capacitance Diode Array for ESD Protection in Two Data Lines NUP2301MW6T1 is a MicroIntegration device designed to provide protection for sensitive components from possible harmful electrical transients; for example, ESD (electrostatic discharge). http://onsemi.com Features PIN CONFIGURATION AND SCHEMATIC • Low Capacitance (2.0 pf Maximum Between I/O Lines) • Single Package Integration Design • Provides ESD Protection for JEDEC Standards JESD22 • • • • • Machine Model = Class C Human Body Model = Class 3B Protection for IEC61000−4−2 (Level 4) 8.0 kV (Contact) 15 kV (Air) Ensures Data Line Speed and Integrity Fewer Components and Less Board Space Direct the Transient to Either Positive Side or to the Ground Pb−Free Package is Available 6 Reverse Voltage I/O 2 5 I/O VP 3 4 N/C 54 MARKING DIAGRAM 3 68d ORDERING INFORMATION Symbol Value Device Unit NUP2301MW6T1 NUP2301MW6T1G VR 70 Vdc IF 200 mAdc IFM(surge) 500 mAdc Repetitive Peak Reverse Voltage VRRM 70 V Average Rectified Forward Current (Note 1) (Averaged over any 20 ms Period) IF(AV) 715 mA Repetitive Peak Forward Current IFRM 450 mA Non−Repetitive Peak Forward Current t = 1.0 ms t = 1.0 ms t = 1.0 S IFSM Peak Forward Surge Current N/C 68 = Specific Device Code d = Date Code MAXIMUM RATINGS (Each Diode) (TJ = 25°C unless otherwise noted) Forward Current 6 SC−88 CASE 419B STYLE 23 T1/E1 Secondary IC Protection T3/E3 Secondary IC Protection HDSL, IDSL Secondary IC Protection Video Line Protection Microcontroller Input Protection Base Stations I2C Bus Protection Rating 1 12 Applications • • • • • • • VN Package Shipping † SC−88 3000/Tape & Reel SC−88 3000/Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. A 2.0 1.0 0.5 Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. FR−5 = 1.0 0.75 0.062 in. Semiconductor Components Industries, LLC, 2005 January, 2005 − Rev. 2 1 Publication Order Number: NUP2301MW6T1/D NUP2301MW6T1 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit RqJA 625 °C/W TL 260 °C Junction Temperature TJ −55 to +150 °C Storage Temperature Tstg −55 to +150 °C Thermal Resistance Junction−to−Ambient Lead Solder Temperature Maximum 10 Seconds Duration ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) (Each Diode) Characteristic Symbol Min Typ Max Unit V(BR) 70 − − Vdc (VR = 70 Vdc) (VR = 25 Vdc, TJ = 150°C) (VR = 70 Vdc, TJ = 150°C) IR − − − − − − 2.5 30 50 mAdc Capacitance (between I/O pins) (VR = 0 V, f = 1.0 MHz) CD − 1.0 2.0 pF Capacitance (between I/O pin and ground) (VR = 0 V, f = 1.0 MHz) CD − 1.6 3 pF (IF = 1.0 mAdc) (IF = 10 mAdc) (IF = 50 mAdc) (IF = 150 mAdc) VF − − − − − − − − 715 855 1000 1250 mVdc OFF CHARACTERISTICS Reverse Breakdown Voltage (I(BR) = 100 mA) Reverse Voltage Leakage Current Forward Voltage 2. FR−5 = 1.0 0.75 0.062 in. 3. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. 10 IR, REVERSE CURRENT (mA) TA = 85°C 10 TA = −40°C 1.0 0.1 TA = 25°C 0.2 0.4 0.6 0.8 1.0 VF, FORWARD VOLTAGE (V) TA = 125°C 1.0 TA = 85°C 0.1 TA = 55°C 0.01 0.001 1.2 TA = 150°C TA = 25°C 0 10 Figure 1. Forward Voltage 20 30 40 VR, REVERSE VOLTAGE (V) Figure 2. Leakage Current 1.75 CD, DIODE CAPACITANCE (pF) IF, FORWARD CURRENT (mA) 100 1.5 1.25 1.0 0.75 0 2 4 6 VR, REVERSE VOLTAGE (V) Figure 3. Capacitance http://onsemi.com 2 8 50 NUP2301MW6T1 PACKAGE DIMENSIONS SC−88/SC70−6/SOT−363 CASE 419B−02 ISSUE 02U NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 419B−01 OBSOLETE, NEW STANDARD 419B−02. A G 6 5 4 1 2 3 DIM A B C D G H J K N S −B− S D 6 PL 0.2 (0.008) M B INCHES MIN MAX 0.071 0.087 0.045 0.053 0.031 0.043 0.004 0.012 0.026 BSC −−− 0.004 0.004 0.010 0.004 0.012 0.008 REF 0.079 0.087 M N J C H K SOLDERING FOOTPRINT* 0.50 0.0197 0.65 0.025 0.65 0.025 0.40 0.0157 1.9 0.0748 SCALE 20:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 3 MILLIMETERS MIN MAX 1.80 2.20 1.15 1.35 0.80 1.10 0.10 0.30 0.65 BSC −−− 0.10 0.10 0.25 0.10 0.30 0.20 REF 2.00 2.20 NUP2301MW6T1 MicroIntegration is a trademarks of Semiconductor Components Industries, LLC (SCILLC). ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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