Direct RDRAM™
K4R571669D/K4R881869D
256/288Mbit RDRAM(D-die)
512K x 16/18bit x 32s banks
Direct RDRAMTM
Version 1.4
July 2002
Page -1
Version 1.4 July 2002
Direct RDRAM™
K4R571669D/K4R881869D
Change History
Version 1.4( July 2002)
- First Copy ( Version 1.4 is named to unify the version of component and device operation datasheets)
- Based on the 256/288Mb A-die RDRAM Version 1.4
Page 0
Version 1.4 July 2002
Direct RDRAM™
K4R571669D/K4R881869D
Overview
The RDRAM device is a general purpose high-performance memory device suitable for use in a broad range of
applications including computer memory, graphics, video,
and any other application where high bandwidth and low
latency are required.
SAMSUNG 230
K4RXXXX69D-Fxxx
The 256/288-Mbit RDRAM devices are extremely highspeed CMOS DRAMs organized as 16M words by 16 or 18
bits. The use of Rambus Signaling Level (RSL) technology
permits up to 1066 MHz transfer rates while using conventional system and board design technologies. RDRAM
devices are capable of sustained data transfers up to 0.938ns
per two bytes (7.5ns per sixteen bytes).
The architecture of RDRAM devices allows the highest
sustained bandwidth for multiple, simultaneous randomly
addressed memory transactions. The separate control and
data buses with independent row and column control yield
over 95% bus efficiency. The RDRAM device's 32 banks
support up to four simultaneous transactions.
Figure 1: Direct RDRAM CSP Package
System oriented features for mobile, graphics and large
memory systems include power management, byte masking,
and x18 organization. The two data bits in the x18 organization are general and can be used for additional storage and
bandwidth or for error correction.
The 256/288-Mbit RDRAM devices are offered in a CSP
horizontal package suitable for desktop as well as lowprofile add-in card and mobile applications.
Key Timing Parameters/Part Numbers
Speed
Features
I/O
Freq.
MHz
tRAC
(Row
Access
Time) ns
Part Number
Bin
-CT9
1066
32P
K4R571669D-FbCcT9
-CN9
1066
32
K4R571669D-FCN9
-CM9
1066
35
K4R571669D-FCM9
-CM8
800
40
K4R571669D-FCM8
-CK8
800
45
K4R571669D-FCK8
-CT9
1066
32P
K4R881869D-FCT9
-CN9
1066
32
K4R881869D-FCN9
-CM9
1066
35
K4R881869D-FCM9
-CM8
800
40
K4R881869D-FCM8
-CK8
800
45
K4R881869D-FCK8
Organization
♦ Highest sustained bandwidth per DRAM device
- 2.1GB/s sustained data transfer rate
- Separate control and data buses for maximized
efficiency
- Separate row and column control buses for
easy scheduling and highest performance
- 32 banks: four transactions can take place simultaneously at full bandwidth data rates
512Kx16x32sa
♦ Low latency features
- Write buffer to reduce read latency
- 3 precharge mechanisms for controller flexibility
- Interleaved transactions
512Kx18x32s
♦ Advanced power management:
- Multiple low power states allows flexibility in power
consumption versus time to transition to active state
- Power-down self-refresh
♦ Organization: 2kbyte pages and 32 banks, x 16/18
a.“32s” - 32 banks which use a “split” bank architecture.
b.“F” - WBGA package.
- x18 organization allows ECC configurations or
increased storage/bandwidth
- x16 organization for low cost applications
c.“C” - RDRAM core uses normal power self refresh.
♦ Uses Rambus Signaling Level (RSL) for up to 1066MHz
operation
Page 1
Version 1.4 July 2002
Direct RDRAM™
K4R571669D/K4R881869D
Pinouts and Definitions
Center-Bonded Devices
These tables shows the pin assignments of the center-bonded
RDRAM package. The mechanical dimensions of this
package are shown in a later section. Refer to Section
“Center-Bonded WBGA Package” on page 18. Note - pin #1
is at the A1 position.
Table 1: Center-Bonded Device (top view)
10
VDD
GND
VDD
GND
VDD
VDD
VDD
VDD
GND
VDD
9
8
GND
VDD
CMD
VDD
GND
GNDa
GNDa
VDD
VDD
GND
GND
VDD
VDD
GND
GND
VCMOS
VDD
GND
7
VDD
DQA8
DQA7
DQA5
DQA3
DQA1
CTMN
CTM
RQ7
RQ5
RQ3
RQ1
DQB1
DQB3
DQB5
DQB7
DQB8
VDD
4
GND
GND
DQA6
DQA4
DQA2
DQA0
CFM
CFMN
RQ6
RQ4
RQ2
RQ0
DQB0
DQB2
DQB4
DQB6
GND
GND
3
VDD
GND
SCK
VCMOS
GND
VDD
GND
VDDa
VREF
GND
VDD
GND
GND
VDD
SIO0
SIO1
GND
VDD
VDD
GND
GND
VDD
GND
GND
GND
GND
GND
VDD
B
C
E
F
G
M
N
P
S
T
6
5
2
1
A
D
H
J
K
L
R
U
ROW
COL
SAMSUNG 230
K4RXXXX69D-Fxxx
Top View
Chip
The pin #1(ROW 1, COL A) is located at the
A1 position on the top side and the A1 position
is marked by the marker “ ”.
Page 2
Version 1.4 July 2002
Direct RDRAM™
K4R571669D/K4R881869D
Table 2: Pin Description
# Pins
center
Signal
I/O
Type
SIO1,SIO0
I/O
CMOSa
2
Serial input/output. Pins for reading from and writing to the control registers using a serial access protocol. Also used for power management.
CMD
I
CMOSa
1
Command input. Pins used in conjunction with SIO0 and SIO1 for reading
from and writing to the control registers. Also used for power management.
SCK
I
CMOSa
1
Serial clock input. Clock source used for reading from and writing to the
control registers
VDD
24
Supply voltage for the RDRAM core and interface logic.
VDDa
1
Supply voltage for the RDRAM analog circuitry.
VCMOS
2
Supply voltage for CMOS input/output pins.
GND
28
Ground reference for RDRAM core and interface.
GNDa
Description
2
Ground reference for RDRAM analog circuitry.
I/O
RSLb
9
Data byte A. Nine pins which carry a byte of read or write data between
the Channel and the RDRAM device. DQA8 is not used (no connection)
by RDRAM device with a x16 organization.
CFM
I
RSLb
1
Clock from master. Interface clock used for receiving RSL signals from
the Channel. Positive polarity.
CFMN
I
RSLb
1
Clock from master. Interface clock used for receiving RSL signals from
the Channel. Negative polarity
1
Logic threshold reference voltage for RSL signals
DQA8..DQA0
VREF
CTMN
I
RSLb
1
Clock to master. Interface clock used for transmitting RSL signals to the
Channel. Negative polarity.
CTM
I
RSLb
1
Clock to master. Interface clock used for transmitting RSL signals to the
Channel. Positive polarity.
RQ7..RQ5 or
ROW2..ROW0
I
RSLb
3
Row access control. Three pins containing control and address information for row accesses.
RQ4..RQ0 or
COL4..COL0
I
RSLb
5
Column access control. Five pins containing control and address information for column accesses.
I/O
RSLb
9
Data byte B. Nine pins which carry a byte of read or write data between
the Channel and the RDRAM device. DQB8 is not used (no connection)
by RDRAM device with a x16 organization.
DQB8..
DQB0
Total pin count per package
92
a. All CMOS signals are high-true; a high voltage is a logic one and a low voltage is logic zero.
b. All RSL signals are low-true; a low voltage is a logic one and a high voltage is logic zero.
Page 3
Version 1.4 July 2002
Direct RDRAM™
K4R571669D/K4R881869D
RQ7..RQ5 or
ROW2..ROW0
3
DQB8..DQB0
9
RQ4..RQ0 or
COL4..COL0
5
CTM CTMN SCK,CMD SIO0,SIO1 CFM CFMN
2
2
DQA8..DQA0
9
RCLK
RCLK
1:8 Demux
1:8 Demux
TCLK
RCLK
Control Registers
Packet Decode
ROWR
ROWA
11 5
5
9
ROP DR BR
AV
Match
DM
6
R
REFR
Power Modes
Mux
DEVID
Packet Decode
COLC
5
5
5
7
COLX
5
5
XOP DX BX COP DC BC
M
S
Match
Row Decode
Match
C
COLM
8
MB MA
Write
Buffer
XOP Decode
PRER
ACT
8
PREX
Mux
Mux
Column Decode & Mask
Bank 17
Bank 18
Bank 29
Bank 30
Bank 31
•••
9
•••
•••
RCLK
•••
SAmp SAmp SAmp
15
14/15 13/14
SAmp SAmp SAmp
17/18 16/17
16
•••
Bank 16
8:1 Mux
SAmp SAmp SAmp
31
30/31 29/30
Bank 15
9
TCLK
Write Buffer
Bank 14
9
1:8 Demux
1:8 Demux
Bank 13
9
Write Buffer
TCLK
Bank 2
72
SAmp SAmp SAmp
29/30 30/31
31
8:1 Mux
Bank 1
Internal DQA Data Path
SAmp SAmp SAmp
16
16/17 17/18
9
9
Bank 0
72
SAmp SAmp SAmp
13/14 14/15
15
9
9
64x72
RCLK
9
64x72 512x128x144
•••
72
72
RD, WR
PREC
DRAM Core
SAmp SAmp SAmp
0
0/1
1/2
Internal DQB Data Path
SAmp SAmp SAmp
1/2
0/1
0
Sense Amp
64x72
9
Figure 2: 256/288-Mbit (512Kx16/18x32s) RDRAM Device Block Diagram
Page 4
Version 1.4 July 2002
Direct RDRAM™
K4R571669D/K4R881869D
General Description
Figure 2 is a block diagram of the 256/288-Mbit RDRAM
device. It consists of two major blocks: a “core” block built
from banks and sense amps similar to those found in other
types of DRAM, and a Direct RambusTM interface block
which permits an external controller to access this core at up
to 2.1GB/s.
Control Registers: The CMD, SCK, SIO0, and SIO1
pins appear in the upper center of Figure 2. They are used to
write and read a block of control registers. These registers
supply the RDRAM configuration information to a
controller and they select the operating modes of the device.
The REFR value is used for tracking the last refreshed row.
Most importantly, the five bit DEVID specifies the device
address of the RDRAM device on the Channel.
Clocking: The CTM and CTMN pins (Clock-To-Master)
generate TCLK (Transmit Clock), the internal clock used to
transmit read data. The CFM and CFMN pins (Clock-FromMaster) generate RCLK (Receive Clock), the internal clock
signal used to receive write data and to receive the ROW and
COL pins.
DQA,DQB Pins: These 16/18 pins carry read (Q) and
write (D) data across the Channel. They are multiplexed/demultiplexed from/to two 64/72-bit data paths (running at
one-eighth the data frequency) inside the RDRAM.
Banks: The 32Mbyte core of the RDRAM device is
divided into thirty two 1Mbyte banks, each organized as 512
rows, with each row containing 128 dualocts, and each
dualoct containing 16/18 bytes. A dualoct is the smallest unit
of data that can be addressed.
Sense Amps: The RDRAM device contains 34 sense
amps. Each sense amp consists of 1kbyte of fast storage (512
bytes for DQA and 512 bytes for DQB) and can hold onehalf of one row of one bank of the RDRAM device. The
sense amp may hold any of the 1024 half-rows of an associated bank. However, each sense amp is shared between two
adjacent banks of the RDRAM device (except for sense
amps 0, 15, 16, and 31). This introduces the restriction that
adjacent banks may not be simultaneously accessed.
RQ Pins: These pins carry control and address information. They are broken into two groups. RQ7..RQ5 are also
called ROW2..ROW0, and are used primarily for controlling
row accesses. RQ4..RQ0 are also called COL4..COL0, and
are used primarily for controlling column accesses.
amps of the RDRAM device. These pins are de-multiplexed
into a 24-bit ROWA (row-activate) or ROWR (row-operation) packet.
COL Pins: The principle use of these five pins is to
manage the transfer of data between the DQA/DQB pins and
the sense amps of the RDRAM device. These pins are demultiplexed into a 23-bit COLC (column-operation) packet
and either a 17-bit COLM (mask) packet or a 17-bit COLX
(extended-operation) packet.
ACT Command: An ACT (activate) command from an
ROWA packet causes one of the 512 rows of the selected
bank to be loaded to its associated sense amps (two 512
bytes sense amps for DQA and two for DQB).
PRER Command: A PRER (precharge) command from
an ROWR packet causes the selected bank to release its two
associated sense amps, permitting a different row in that
bank to be activated, or permitting adjacent banks to be activated.
RD Command: The RD (read) command causes one of
the 128 dualocts of one of the sense amps to be transmitted
on the DQA/DQB pins of the Channel.
WR Command: The WR (write) command causes a
dualoct received from the DQA/DQB data pins of the
Channel to be loaded into the write buffer. There is also
space in the write buffer for the BC bank address and C
column address information. The data in the write buffer is
automatically retired (written with optional bytemask) to one
of the 128 dualocts of one of the sense amps during a subsequent COP command. A retire can take place during a RD,
WR, or NOCOP to another device, or during a WR or
NOCOP to the same device. The write buffer will not retire
during a RD to the same device. The write buffer reduces the
delay needed for the internal DQA/DQB data path turnaround.
PREC Precharge: The PREC, RDA and WRA
commands are similar to NOCOP, RD and WR, except that a
precharge operation is performed at the end of the column
operation. These commands provide a second mechanism
for performing precharge.
PREX Precharge: After a RD command, or after a WR
command with no byte masking (M=0), a COLX packet may
be used to specify an extended operation (XOP). The most
important XOP command is PREX. This command provides
a third mechanism for performing precharge.
ROW Pins: The principle use of these three pins is to
manage the transfer of data between the banks and the sense
Page 5
Version 1.4 July 2002
Direct RDRAM™
K4R571669D/K4R881869D
Packet Format
Figure 3 shows the formats of the ROWA and ROWR
packets on the ROW pins. Table 3 describes the fields which
comprise these packets. DR4T and DR4F bits are encoded to
contain both the DR4 device address bit and a framing bit
which allows the ROWA or ROWR packet to be recognized
by the RDRAM device.
The AV (ROWA/ROWR packet selection) bit distinguishes
between the two packet types. Both the ROWA and ROWR
packet provide a five bit device address and a five bit bank
address. An ROWA packet uses the remaining bits to specify
a nine bit row address, and the ROWR packet uses the
remaining bits for an eleven bit opcode field. Note the use of
the “RsvX” notation to reserve bits for future address field
extension.
Table 3: Field Description for ROWA Packet and ROWR Packet
Field
Description
DR4T,DR4F
Bits for framing (recognizing) a ROWA or ROWR packet. Also encodes highest device address bit.
DR3..DR0
Device address for ROWA or ROWR packet.
BR4..BR0
Bank address for ROWA or ROWR packet. RsvB denotes bits ignored by the RDRAM device.
AV
Selects between ROWA packet (AV=1) and ROWR packet (AV=0).
R8..R0
Row address for ROWA packet. RsvR denotes bits ignored by the RDRAM device.
ROP10..ROP0
Opcode field for ROWR packet. Specifies precharge, refresh, and power management functions.
Figure 3 also shows the formats of the COLC, COLM, and
COLX packets on the COL pins. Table 4 describes the fields
which comprise these packets.
The COLC packet uses the S (Start) bit for framing. A
COLM or COLX packet is aligned with this COLC packet,
and is also framed by the S bit.
The 23 bit COLC packet has a five bit device address, a five
bit bank address, a seven bit column address, and a four bit
opcode. The COLC packet specifies a read or write
command, as well as some power management commands.
The remaining 17 bits are interpreted as a COLM (M=1) or
COLX (M=0) packet. A COLM packet is used for a COLC
write command which needs bytemask control. The COLM
packet is associated with the COLC packet from at least tRTR
earlier. A COLX packet may be used to specify an independent precharge command. It contains a five bit device
address, a five bit bank address, and a five bit opcode. The
COLX packet may also be used to specify some housekeeping and power management commands. The COLX
packet is framed within a COLC packet but is not otherwise
associated with any other packet.
Table 4: Field Description for COLC Packet, COLM Packet, and COLX Packet
Field
Description
S
Bit for framing (recognizing) a COLC packet, and indirectly for framing COLM and COLX packets.
DC4..DC0
Device address for COLC packet.
BC4..BC0
Bank address for COLC packet. RsvB denotes bits reserved for future extension (controller drives 0 ’ s).
C6..C0
Column address for COLC packet. RsvC denotes bits ignored by the RDRAM device.
COP3..COP0
Opcode field for COLC packet. Specifies read, write, precharge, and power management functions.
M
Selects between COLM packet (M=1) and COLX packet (M=0).
MA7..MA0
Bytemask write control bits. 1=write, 0=no-write. MA0 controls the earliest byte on DQA8..0.
MB7..MB0
Bytemask write control bits. 1=write, 0=no-write. MB0 controls the earliest byte on DQB8..0.
DX4..DX0
Device address for COLX packet.
BX4..BX0
Bank address for COLX packet. RsvB denotes bits reserved for future extension (controller drives 0’ s).
XOP4..XOP0
Opcode field for COLX packet. Specifies precharge, IOL control, and power management functions.
Page 6
Version 1.4 July 2002
Direct RDRAM™
K4R571669D/K4R881869D
T0
T1
T2
T3
T8
CTM/CFM
T9
T10
T11
CTM/CFM
ROW2 DR4T DR2 BR0 BR3 RsvR R8
R5
R2
ROW2 DR4T DR2 BR0 BR3
ROW1
DR4F DR1 BR1 BR4 RsvR
R7
R4
R1
ROW1
DR4F DR1 BR1 BR4 ROP9 ROP7 ROP4 ROP1
ROW0
DR3 DR0 BR2 RsvB AV=1
R6
R3
R0
ROW0
DR3 DR0 BR2 RsvB AV=0 ROP6 ROP3 ROP0
ROWA Packet
T0
T1
T2
ROP10 ROP8 ROP5 ROP2
ROWR Packet
T3
T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15
CTM/CFM
CTM/CFM
S=1
C6
C4
C5
C3
COL4
DC4
COL3
DC3
COL2
DC2 COP1
RsvB BC2
C2
COL1
DC1 COP0
BC4 BC1
C1
COL0
DC0 COP2
COP3 BC3 BC0
C0
ROW2
..ROW0
ACT a0
COL4
..COL0
WR b1
PRER c0
tPACKET
MSK (b1)
PREX d0
DQA8..0
DQB8..0
COLC Packet
T8
T9
T10
T11
CTM/CFM
a
T12
T13
T14
T15
CTM/CFM
COL4
S=1a MA7 MA5 MA3 MA1
COL4
S=1b DX4 XOP4 RsvB BX1
COL3
M=1 MA6 MA4 MA2 MA0
COL3
M=0 DX3 XOP3 BX4 BX0
COL2
MB7 MB4 MB1
COL2
DX2 XOP2 BX3
COL1
MB6 MB3 MB0
COL1
DX1 XOP1 BX2
COL0
MB5 MB2
COL0
DX0 XOP0
The COLM is associated with a
previous COLC, and is aligned
with the present COLC, indicated
by the Start bit (S=1) position.
b The
COLM Packet
COLX Packet
COLX is aligned
with the present COLC,
indicated by the Start
bit (S=1) position.
Figure 3: Packet Formats
Page 7
Version 1.4 July 2002
Direct RDRAM™
K4R571669D/K4R881869D
Field Encoding Summary
Table 5 shows how the six device address bits are decoded
for the ROWA and ROWR packets. The DR4T and DR4F
encoding merges a fifth device bit with a framing bit. When
neither bit is asserted, the device is not selected. Note that a
broadcast operation is indicated when both bits are set.
Broadcast operation would typically be used for refresh and
power management commands. If the device is selected, the
DM (DeviceMatch) signal is asserted and an ACT or ROP
command is performed.
Table 5: Device Field Encodings for ROWA Packet and ROWR Packet
DR4T
DR4F
Device Selection
Device Match signal (DM)
1
1
All devices (broadcast)
DM is set to 1
0
1
One device selected
DM is set to 1 if {DEVID4..DEVID0} == {0,DR3..DR0} else DM is set to 0
1
0
One device selected
DM is set to 1 if {DEVID4..DEVID0} == {1,DR3..DR0} else DM is set to 0
0
0
No packet present
DM is set to 0
Table 6 shows the encodings of the remaining fields of the
ROWA and ROWR packets. An ROWA packet is specified
by asserting the AV bit. This causes the specified row of the
specified bank of this device to be loaded into the associated
sense amps.
An ROWR packet is specified when AV is not asserted. An
11 bit opcode field encodes a command for one of the banks
of this device. The PRER command causes a bank and its
two associated sense amps to precharge, so another row or
an adjacent bank may be activated. The REFA (refresh-activate) command is similar to the ACT command, except the
row address comes from an internal register REFR, and
REFR is incremented at the largest bank address. The REFP
(refresh-precharge) command is identical to a PRER
command.
The NAPR, NAPRC, PDNR, ATTN, and RLXR commands
are used for managing the power dissipation of the RDRAM
device and are described in more detail in “Power State
Management” on page 50. The TCEN and TCAL commands
are used to adjust the output driver slew rate and they are
described in more detail in “Current and Temperature
Control” on page 56.
Table 6: ROWA Packet and ROWR Packet Field Encodings
ROP10..ROP0 Field
DMa
AV
Name
10
9
-
8
-
7
-
6
-
5
-
4
-
3
0
-
-
1
1
Row address
-
1
0
1
1
0
0
0
xc
x
x
1
0
0
0
0
1
1
0
0
x
Command Description
2:0
---
-
No operation.
ACT
Activate row R8..R0 of bank BR4..BR0 of device and move device to ATTNb.
000
PRER
Precharge bank BR4..BR0 of this device.
000
REFA
Refresh (activate) row REFR8..REFR0 of bank BR4..BR0 of device.
Increment REFR if BR4..BR0 = 11111 (see Figure 52).
1
0
1
0
1
0
1
0
0
x
000
REFP
Precharge bank BR4..BR0 of this device after REFA (see Figure 52).
1
0
x
x
0
0
0
0
1
x
000
PDNR
Move this device into the powerdown (PDN) power state (see Figure 49).
1
0
x
x
0
0
0
1
0
x
000
NAPR
Move this device into the nap (NAP) power state (see Figure 49).
1
0
x
x
0
0
0
1
1
x
000
NAPRC
Move this device into the nap (NAP) power state conditionally
1
0
x
x
x
x
x
x
x
0
000
ATTNb
Move this device into the attention (ATTN) power state (see Figure 47).
1
0
x
x
x
x
x
x
x
1
000
RLXR
Move this device into the standby (STBY) power state (see Figure 48).
1
0
0
0
0
0
0
0
0
x
001
TCAL
Temperature calibrate this device (see Figure 55).
1
0
0
0
0
0
0
0
0
x
010
TCEN
Temperature calibrate/enable this device (see Figure 55).
1
0
0
0
0
0
0
0
0
0
000
NOROP
No operation.
a. The DM (Device Match signal) value is determined by the DR4T,DR4F, DR3..DR0 field of the ROWA and ROWR packets. See Table 5.
b. The ATTN command does not cause a RLX-to-ATTN transition for a broadcast operation (DR4T/DR4F=1/1).
c. An “x” entry indicates which commands may be combined. For instance, the three commands PRER/NAPRC/RLXR may be specified in one ROP value (011000111000).
Page 8
Version 1.4 July 2002
Direct RDRAM™
K4R571669D/K4R881869D
Table 7 shows the COP field encoding. The device must be
in the ATTN power state in order to receive COLC packets.
The COLC packet is used primarily to specify RD (read) and
WR (write) commands. Retire operations (moving data from
the write buffer to a sense amp) happen automatically. See
Figure 18 for a more detailed description.
The COLC packet can also specify a PREC command,
which precharges a bank and its associated sense amps. The
RDA/WRA commands are equivalent to combining RD/WR
with a PREC. RLXC (relax) performs a power mode transition. See “Power State Management” on page 50.
Table 7: COLC Packet Field Encodings
S
DC4.. DC0
(select device)a
COP3..0
Name
Command Description
0
----
-----
-
No operation.
1
/= (DEVID4 ..0)
-----
-
Retire write buffer of this device.
1
== (DEVID4 ..0)
x000b
NOCOP
Retire write buffer of this device.
1
== (DEVID4 ..0)
x001
WR
Retire write buffer of this device, then write column C6..C0 of bank BC4..BC0 to write buffer.
1
== (DEVID4 ..0)
x010
RSRV
Reserved, no operation.
1
== (DEVID4 ..0)
x011
RD
Read column C6..C0 of bank BC4..BC0 of this device.
1
== (DEVID4 ..0)
x100
PREC
Retire write buffer of this device, then precharge bank BC4..BC0 (see Figure 15).
1
== (DEVID4 ..0)
x101
WRA
Same as WR, but precharge bank BC4..BC0 after write buffer (with new data) is retired.
1
== (DEVID4 ..0)
x110
RSRV
Reserved, no operation.
1
== (DEVID4 ..0)
x111
RDA
Same as RD, but precharge bank BC4..BC0 afterward.
1
== (DEVID4 ..0)
1xxx
RLXC
Move this device into the standby (STBY) power state (see Figure 48).
a. “/=” means not equal, “==” means equal.
b. An “x” entry indicates which commands may be combined. For instance, the two commands WR/RLXC may be specified in one COP value (1001).
Table 8 shows the COLM and COLX field encodings. The
M bit is asserted to specify a COLM packet with two 8 bit
bytemask fields MA and MB. If the M bit is not asserted, an
COLX is specified. It has device and bank address fields,
and an opcode field. The primary use of the COLX packet is
to permit an independent PREX (precharge) command to be
specified without consuming control bandwidth on the ROW
pins. It is also used for the CAL(calibrate) and SAM (sample) current control commands (see “Current and Temperature Control” on page 56), and for the RLXX power mode
command (see “Power State Management” on page 50).
Table 8: COLM Packet and COLX Packet Field Encodings
M
DX4 .. DX0
(selects device)
XOP4..0
Name
Command Description
1
----
-
MSK
MB/MA bytemasks used by WR/WRA.
0
/= (DEVID4 ..0)
-
-
No operation.
0
== (DEVID4 ..0)
00000
NOXOP
No operation.
0
== (DEVID4 ..0)
1xxx0a
PREX
Precharge bank BX3..BX0 of this device (see Figure 15).
0
== (DEVID4 ..0)
x10x0
CAL
Calibrate (drive) IOL current for this device (see Figure 54).
0
== (DEVID4 ..0)
x11x0
CAL/SAM
Calibrate (drive) and Sample ( update) IOL current for this device (see Figure 54).
0
== (DEVID4 ..0)
xxx10
RLXX
Move this device into the standby (STBY) power state (see Figure 48).
0
== (DEVID4 ..0)
xxxx1
RSRV
Reserved, no operation.
a. An “x” entry indicates which commands may be combined. For instance, the two commands PREX/RLXX may be specified in one XOP value (10010).
Page 9
Version 1.4 July 2002
Direct RDRAM™
K4R571669D/K4R881869D
Electrical Conditions
Table 9: Electrical Conditions
Symbol
Parameter and Conditions
Min
Max
Unit
-
100
°C
2.50 - 0.13
2.50 + 0.13
V
TJ
Junction temperature under bias
VDD, VDDA
Supply voltage
VDD,N, VDDA,N
Supply voltage droop (DC) during NAP interval (tNLIMIT)
-
2.0
%
vDD,N, vDDA,N
Supply voltage ripple (AC) during NAP interval (tNLIMIT)
-2.0
2.0
%
VCMOSa
Supply voltage for CMOS pins (2.5V controllers)
Supply voltage for CMOS pins (1.8V controllers)
VDD
1.80 - 0.1
VDD
1.80 + 0.2
V
V
VREF
Reference voltage
1.40 - 0.2
1.40 + 0.2
V
VDIL
RSL data input - low voltage @ tCYCLE=1.875ns
VREF - 0.5
VREF - 0.15
RSL data input - low voltage @ tCYCLE=2.50ns
VREF - 0.5
VREF - 0.2
VREF + 0.15
VREF + 0.5
VREF + 0.2
VREF + 0.5
V
VDIH
RSL data input - high voltageb @ tCYCLE=1.875ns
RSL data input - high
voltageb
V
@ tCYCLE=2.50ns
RDA
RSL data asymmetry : RDA = (VDIH - VREF) / (VREF - VDIL)
0.67
1.00
-
VCM
RSL clock input - common mode VCM = (VCIH+VCIL)/2
1.3
1.8
V
VCIS,CTM
RSL clock input swing: VCIS = VCIH - VCIL (CTM,CTMN pins).
0.35
1.00
V
VCIS,CFM
RSL clock input swing: VCIS = VCIH - VCIL (CFM,CFMN pins).
0.225
1.00
V
0.3c
VCMOS/2 - 0.25
VIL,CMOS
VIH,CMOS
CMOS input low voltage
-
CMOS input high voltage
VCMOS/2 + 0.25
VCMOS+0.3
d
V
V
a. VCMOS must remain on as long as VDD is applied and cannot be turned off.
b. VDIH is typically equal to VTERM (1.8V±0.1V) under DC conditions in a system.
c. Voltage undershoot is limited to -0.7V for a duration of less than 5ns.
d. Voltage overshoot is limited toVCMOS +0.7V for a duration of less than 5ns
Page 10
Version 1.4 July 2002
Direct RDRAM™
K4R571669D/K4R881869D
Electrical Characteristics
Table 10: Electrical Characteristics
Symbol
Parameter and Conditions
ΘJC
Junction-to-Case thermal resistance
IREF
VREF current @ VREF,MAX
IOH
RSL output high current @ (0≤VOUT≤VDD)
RSL IOL current @ tCYCLE= 1.875ns VOL = 0.9V, VDD,MIN , TJ,MAX
IALL
RSL IOL current @ tCYCLE= 2.50ns VOL = 0.9V, VDD,MIN , TJ,MAX
∆IOL
RSL IOL current resolution step
rOUT
Dynamic output impedance @ VOL= 0.9V
IOL,NOM
RSL IOL current @ VOL = 1.0V
RSL IOL current @ VOL =
b,c@
1.0Vb,c
tCYCLE=1.875ns
a
a
Min
Max
Unit
-
0.5
°C/Watt
-10
10
µA
-10
10
µA
32.0
90.0
30.0
90.0
-
1.5
mA
150
-
Ω
27.1
30.1
26.6
30.6
-10.0
10.0
µA
-
0.3
V
VCMOS-0.3
-
V
mA
mA
@ tCYCLE=2.50ns
II,CMOS
CMOS input leakage current @ (0≤VI,CMOS≤VCMOS)
VOL,CMOS
CMOS output voltage @ IOL,CMOS= 1.0mA
VOH,CMOS
CMOS output high voltage @ IOH,CMOS= -0.25mA
a. This measurement is made in manual current control mode; i.e. with all output device legs sinking current.
b. This measurement is made in automatic current control mode after at least 64 current control calibration operations to a device and after CCA and
CCB are initialized to a value of 64. This value applies to all DQA and DQB pins.
c. This measurement is made in automatic current control mode in a 25Ω test system with VTERM= 1.714V and VREF= 1.357V and with the ASYMA
and ASYMB register fields set to 0.
Page 11
Version 1.4 July 2002
Direct RDRAM™
K4R571669D/K4R881869D
Timing Conditions
Table 11: Timing Conditions
Symbol
Parameter
Min
Max
Unit
Figure(s)
CTM and CFM cycle times (-1066)
1.875
2.5
CTM and CFM cycle times (-800)
2.50
3.33
ns
Figure 56
tCR, tCF
CTM and CFM input rise and fall times. Use the minimum value of
these parameters during testing.
0.2
0.5
ns
Figure 56
tCH, tCL
CTM and CFM high and low times
40%
60%
tCYCLE
Figure 56
CTM-CFM differential (MSE/MS=0/0)
CTM-CFM differential (MSE/MS=1/1)a
0.0
0.9
1.0
1.0
tCYCLE
CTM-CFM differential only for 1.875ns (MSE/MS=1/0)
-0.1
0.1
tDCW
Domain crossing window
-0.1
0.1
tCYCLE
Figure 62
tDR, tDF
DQA/DQB/ROW/COL input rise/fall times (20% to 80%). Use the
minimum value of these parameters during testing.
0.2
0.45
ns
Figure 57
DQA/DQB/ROW/COL-to-CFM set/hold @ t CYCLE=1.875ns
0.160b
-
0.200b.c
ns
Figure 57
DQA/DQB/ROW/COL-to-CFM set/hold @ t CYCLE=2.50ns
-
tCYCLE
tTR
tS, tH
Figure 43
Figure 56
tDR1, tDF1
SIO0, SIO1 input rise and fall times
-
5.0
ns
Figure 59
tDR2, tDF2
CMD, SCK input rise and fall times
-
2.0
ns
Figure 59
1000
-
SCK cycle time - Power transitions @ t CYCLE=1.875ns
7.5
-
ns
Figure 59
SCK cycle time - Power transitions @ t CYCLE=2.50ns
10
-
SCK high and low times @ t CYCLE=1.875ns
3.5
ns
Figure 59
SCK high and low times @ t CYCLE=2.50ns
4.25
-
CMD setup time to SCK rising or falling edged @ t CYCLE=1.875ns
1.0
ns
Figure 59
1.25
-
SCK cycle time - Serial control register transactions
tCYCLE1
tCH1, tCL1
tS1
CMD setup time to SCK rising or falling
edged @
t CYCLE=2.50ns
tH1
CMD hold time to SCK rising or falling edged
1
-
ns
Figure 59
tS2
SIO0 setup time to SCK falling edge
40
-
ns
Figure 59
tH2
SIO0 hold time to SCK falling edge
40
-
ns
Figure 59
tS3
PDEV setup time on DQA5..0 to SCK rising edge.
0
-
ns
Figure 50
tH3
PDEV hold time on DQA5..0 to SCK rising edge.
5.5
-
ns
Figure 60
tS4
ROW2..0, COL4..0 setup time for quiet window
-1
-
tCYCLE
Figure 50
tH4
ROW2..0, COL4..0 hold time for quiet windowe
5
-
tCYCLE
Figure 50
tNPQ
Quiet on ROW/COL bits during NAP/PDN entry
4
-
tCYCLE
Figure 49
tREADTOCC
Offset between read data and CC packets (same device)
12
-
tCYCLE
Figure 54
tCCSAMTOREAD
Offset between CC packet and read data (same device)
8
-
tCYCLE
Figure 54
tCE
CTM/CFM stable before NAP/PDN exit
2
-
tCYCLE
Figure 50
Page 12
Version 1.4 July 2002
Direct RDRAM™
K4R571669D/K4R881869D
Table 11: Timing Conditions
Symbol
Parameter
Min
Max
Unit
Figure(s)
tCD
CTM/CFM stable after NAP/PDN entry
100
-
tCYCLE
Figure 49
tFRM
ROW packet to COL packet ATTN framing delay
7
-
tCYCLE
Figure 48
tNLIMIT
Maximum time in NAP mode
10.0
µs
Figure 47
tREF
Refresh interval
32
ms
Figure 52
tBURST
Interval after PDN or NAP (with self-refresh) exit in which all
banks of the RDRAM device must be refreshed at least once.
200
µs
Figure 53
tCCTRL
Current control interval
100ms
ms/tCYCLE
Figure 54
tTEMP
Temperature control interval
100
ms
Figure 55
tTCEN
TCE command to TCAL command
150
-
tCYCLE
Figure 55
tTCAL
TCAL command to quiet window
2
2
tCYCLE
Figure 55
tTCQUIET
Quiet window (no read data)
140
-
tCYCLE
Figure 55
tPAUSE
RDRAM device delay (no RSL operations allowed)
200.0
µs
page 38
34 tCYCLE
a. MSE/MS are fields of the SKIP register. For this combination (skip override) the tDCW parameter range is effectively 0.0 to 0.0.
b. tS,MIN and tH,MIN for other tCYCLE values can be interpolated between or extrapolated from the timings at the 2 specified t CYCLE values.
c. This parameter also applies to a-1066 part when operated with tCYCLE = 2.50ns
d. With VIL,CMOS=0.5VCMOS-0.4V and VIH,CMOS=0.5VCMOS+0.4V
e. Effective hold becomes tH4’=tH4+[PDNXA•64•tSCYCLE+tPDNXB,MAX]-[PDNX•256•tSCYCLE]
if [PDNX•256•tSCYCLE] < [PDNXA•64•tSCYCLE+tPDNXB,MAX]. See Figure 50.
Page 13
Version 1.4 July 2002
Direct RDRAM™
K4R571669D/K4R881869D
Timing Characteristics
Table 12: Timing Characteristics
Symbol
Parameter
Min
Max
CTM-to-DQA/DQB output time @ tCYCLE=1.875ns
-0.195a
+0.195a
CTM-to-DQA/DQB output time @ tCYCLE=2.5ns
-0.260a,b
+0.260a,b
DQA/DQB output rise and fall times @ tCYCLE=1.875ns
0.2
0.32
DQA/DQB output rise and fall times @ tCYCLE=2.5ns
0.2
0.45
tQ
tQR, tQF
Unit
Figure(s)
ns
Figure 58
ns
Figure 58
tQ1
SCK(neg)-to-SIO0 delay @ CLOAD,MAX = 20pF (SD read data valid).
-
10
ns
Figure 61
tHR
SCK(pos)-to-SIO0 delay @ CLOAD,MAX = 20pF (SD read data hold).
2
-
ns
Figure 61
tQR1, tQF1
SIOOUT rise/fall @ CLOAD,MAX = 20pF
-
12
ns
Figure 61
tPROP1
SIO0-to-SIO1 or SIO1-to-SIO0 delay @ CLOAD,MAX = 20pF
-
20
ns
Figure 61
tNAPXA
NAP exit delay - phase A
-
50
ns
Figure 50
tNAPXB
NAP exit delay - phase B
-
40
ns
Figure 50
tPDNXA
PDN exit delay - phase A
-
4
µs
Figure 50
tPDNXB
PDN exit delay - phase B
-
9000
tCYCLE
Figure 50
tAS
ATTN-to-STBY power state delay
-
1
tCYCLE
Figure 48
tSA
STBY-to-ATTN power state delay
-
0
tCYCLE
Figure 48
tASN
ATTN/STBY-to-NAP power state delay
-
8
tCYCLE
Figure 49
tASP
ATTN/STBY-to-PDN power state delay
-
8
tCYCLE
Figure 49
a. tQ,MIN and tQ,MAX for other tCYCLE values can be interpolated between or extrapolated from the timings at the 3 specified tCYCLE values.
b.This parameter also applies to a-1066 part when operated with tCYCLE = 2.50ns
Page 14
Version 1.4 July 2002
Direct RDRAM™
K4R571669D/K4R881869D
Timing Parameters
Table 13: Timing Parameter Summary
Parameter
Min Min Min Min
-32P -32
-35
-40
-1066 -1066 -1066 -800
Description
Min
-45
-800
Max
Units
Figure(s)
tRC
Row Cycle time of RDRAM banks -the interval between ROWA packets with ACT commands to the same bank.
28
28
32
28
28
-
tCYCLE
Figure 16
Figure 17
tRAS
RAS-asserted time of RDRAM bank - the interval between ROWA
packet with ACT command and next ROWR packet with PRERa command to the same bank.
20
20
22
20
20
64µsb
tCYCLE
Figure 16
Figure 17
tRP
Row Precharge time of RDRAM banks - the interval between ROWR
packet with PRERa command and next ROWA packet with ACT command to the same bank.
8
8
10
8
8
-
tCYCLE
Figure 16
Figure 17
tPP
Precharge-to-precharge time of RDRAM device - the interval between
successive ROWR packets with PRERa commands to any banks of the
same device.
8
8
8
8
8
-
tCYCLE
Figure 13
tRR
RAS-to-RAS time of RDRAM device - the interval between successive
ROWA packets with ACT commands to any banks of the same device.
8
8
8
8
8
-
tCYCLE
Figure 14
tRCD
RAS-to-CAS Delay - the interval from ROWA packet with ACT command to COLC packet with RD or WR command). Note - the RAS-toCAS delay seen by the RDRAM core (tRCD-C) is equal to tRCD-C = 1 +
tRCD because of differences in the row and column paths through the
RDRAM interface.
9
9
9
7
9
-
tCYCLE
Figure 16
Figure 17
tCAC
CAS Access delay - the interval from RD command to Q read data. The
equation for tCAC is given in the TPARM register in Figure 40.
8
9
9
8
8
12
tCYCLE
Figure 5
Figure 40
tCWD
CAS Write Delay (interval from WR command to D write data.
6
6
6
6
6
6
tCYCLE
Figure 5
tCC
CAS-to-CAS time of RDRAM bank - the interval between successive
COLC commands).
4
4
4
4
4
-
tCYCLE
Figure 16
Figure 17
tPACKET
Length of ROWA, ROWR, COLC, COLM or COLX packet.
4
4
4
4
4
4
tCYCLE
Figure 3
tRTR
Interval from COLC packet with WR command to COLC packet which
causes retire, and to COLM packet with bytemask.
8
8
8
8
8
-
tCYCLE
Figure 18
tOFFP
The interval (offset) from COLC packet with RDA command, or from
COLC packet with retire command (after WRA automatic precharge),
or from COLC packet with PREC command, or from COLX packet
with PREX command to the equivalent ROWR packet with PRER. The
equation for tOFFP is given in the TPARM register in Figure 40.
4
4
4
4
4
4
tCYCLE
Figure 15
Figure 40
tRDP
Interval from last COLC packet with RD command to ROWR packet
with PRER.
4
4
4
4
4
-
tCYCLE
Figure 16
tRTP
Interval from last COLC packet with automatic retire command to
ROWR packet with PRER.
4
4
4
4
4
-
tCYCLE
Figure 17
a. Or equivalent PREC or PREX command. See Figure 15.
b. This is a constraint imposed by the core, and is therefore in units of µs rather than tCYCLE.
Page 15
Version 1.4 July 2002
Direct RDRAM™
K4R571669D/K4R881869D
Absolute Maximum Ratings
Table 14: Absolute Maximum Ratings
Symbol
Parameter
Min
Max
Unit
VI,ABS
Voltage applied to any RSL or CMOS pin with respect to Gnd
- 0.3
VDD+0.3
V
VDD,ABS, VDDA,ABS
Voltage on VDD and VDDA with respect to Gnd
- 0.5
VDD+1.0
V
TSTORE
Storage temperature
- 50
100
°C
TMIN
Minimum operation temperature
0
Note*
°C
Note*) Component : refer to TJ,ΘJC RIMM: refre to TPLATE, MAX
IDD - Supply Current Profile
Table 15: Supply Current Profile
Min
Max
(1066MHz, 32P/-32/-35)
Max
(800MHz,
-40/-45)
Unit
Device in PDN, self-refresh enabled and INIT.LSR=0.
-
6000
6000
µA
IDD,NAP
Device in NAP.
-
4
4
mA
IDD,STBY
Device in STBY. This is the average for a device in STBY with (1) no
packets on the Channel, and (2) with packets sent to other devices.
-
100
80
mA
IDD,REFRESH
Device in STBY and refreshing rows at the tREF,MAX period.
-
100
80
mA
IDD,ATTN
Device in ATTN. This is the average for a device in ATTN with (1) no
packets on the Channel, and (2) with packets sent to other devices.
-
150
120
mA
IDD,ATTN-W
Device in ATTN. ACT command every 8•tCYCLE, PRE command every
8•tCYCLE, WR command every 4•tCYCLE, and data is 1100..1100
-
790(x18)b
620(x18)
mA
730(x16)
575(x16)
Device in ATTN. ACT command every 8•tCYCLE, PRE command every
8•tCYCLE, RD command every 4•tCYCLE, and data is 1111..1111c
-
700(x18)
560(x18)
650(x16)
530(x16)
IDD value
RDRAM Power State and Steady-State Transaction Ratesa
IDD,PDN
IDD,ATTN-R
mA
a. CMOS interface consumes power in all power states.
b. x18/x16 RDRAM data width.
c. This does not include the IOL sink current. The RDRAM dissipates IOL•VOL in each output driver when a logic one is driven.
Table 16: Supply Current at Initialization
Symbol
Parameter
Allowed Range of tCYCLE
VDD
Min
Max
Unit
mA
mA
IDD,PWRUP,D
IDD from power -on to SETR
1.875ns to 2.5ns
VDD,MIN
-
200a
IDD,SETR,D
IDD from SETR to CLRR
1.875ns to 2.5ns
VDD,MIN
-
332
a. The supply current will be 150mA when tCYCLE is in the range 15ns to 1000ns.
Page 16
Version 1.4 July 2002
Direct RDRAM™
K4R571669D/K4R881869D
Capacitance and Inductance
Table 17: RSL Pin Parasitics
Symbol
LI
L12
Parameter and Conditions - RSL pins
Min
Max
Unit
Figure
RSL effective input inductance @ tCYCLE=1.875ns
-
3.5
RSL effective input inductance @ tCYCLE=2.5ns
-
4.0
nH
Figure 63
Mutual inductance between any DQA or DQB RSL signals.
-
0.2
nH
Mutual inductance between any ROW or COL RSL signals.
-
0.6
nH
Difference in LI value between any RSL pins of a single device.
-
1.8
nH
Figure 63
2.0
2.3
pF
Figure 63
2.0
2.4
Figure 63
∆LI
RSL effective input capacitancea @ tCYCLE=1.875ns
CI
RSL effective input
capacitancea @ t
CYCLE=2.5ns
C12
Mutual capacitance between any RSL signals.
-
0.1
pF
Figure 63
∆CI
Difference in CI value between average of {CTM, CTMN,
CFM, CFMN} and any RSL pins of a single device.
-
0.06
pF
Figure 63
RSL effective input resistance @ tCYCLE=1.875ns
4
10
Ω
Figure 63
RSL effective input resistance @ tCYCLE=2.5ns
4
15
Min
Max
Unit
Figure
RI
a. This value is a combination of the device IO circuitry and package capacitances
Table 18: CMOS Pin Parasitics
Symbol
Parameter and Conditions - CMOS pins
LI ,CMOS
CMOS effective input inductance
CI ,CMOS
CMOS effective input capacitance (SCK,CMD)a
CI ,CMOS,SIO
CMOS effective input capacitance (SIO1,
SIO0)a
8.0
nH
1.7
2.1
pF
-
7.0
pF
Figure 63
a. This value is a combination of the device IO circuitry and package capacitances.
Page 17
Version 1.4 July 2002
Direct RDRAM™
K4R571669D/K4R881869D
Center-Bonded WBGA Package
(92balls)
Figure 4 shows the form and dimensions of the recommended package for the 92balls center-bonded WBGA
device class.
D
A
B
C
D
E
F
Bottom
G
H
J
K
L
M N
P
R
S
T
U
Bottom
Top
1
2
3
4
A
5
6
7
8
e2
9
10
d
e1
Bottom
E
E1
Figure 4: Center-Bonded WBGA Package
Table lists the numerical values corresponding to dimensions shown in Figure 4.
Table 19: Center-Bonded WBGA Package Dimensions
Symbol
Parameter
Min.
Max.
Unit
e1
Ball pitch (x-axis)
0.80
0.80
mm
e2
Ball pitch (y-axis)
0.80
0.80
mm
A
Package body length
9.2
9.4
mm
D
Package body width
15.0
15.2
mm
E
Package total thickness
0.98
1.08
mm
E1
Ball height
0.30
0.40
mm
d
Ball diameter
0.40
0.50
mm
Page 18
Version 1.4 July 2002