Advanced
FLASH MEMORY
K9E2G08B0M
Document Title
256M x 8 Bits NAND Flash Memory
Revision History
Revision No. History
Draft Date
Remark
0.0
Initial issue.
Nov. 8th 2004
Advanced
0.1
1.Note1 of Program/Erase characteristics is added
2.Technical note is changed
Nov. 22th 2004
Preliminary
Note : For more detailed features and specifications including FAQ, please refer to Samsung’s Flash web site.
http://www.samsung.com/Products/Semiconductor/
The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right
to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have
any questions, please contact the SAMSUNG branch office near you.
1
Advanced
FLASH MEMORY
K9E2G08B0M
256M x 8 Bits NAND Flash Memory
PRODUCT LIST
Part Number
K9E2G08B0M-Y,P
Vcc Range
Organization
2.5V ~ 2.9V
X8
K9E2G08B0M-V,F
PKG Type
TSOP1
WSOP1
FEATURES
• Voltage Supply : 2.5V ~ 2.9V
• Organization
- Memory Cell Array : (256M + 8,192K)bits x 8bits
- Data Register : (512 + 16)bits x 8bits
• Automatic Program and Erase
- Page Program : (512 + 16)bits x 8bits
- Block Erase : (16K + 512)Bytes
• Page Read Operation
- Page Size : (512 + 16)Bytes
- Random Access
: 15µs(Max.)
- Serial Page Access : 50ns(Min.)
• Fast Write Cycle Time
- Program time : 200µs(Typ.)
- Block Erase Time : 2ms(Typ.)
• Command/Address/Data Multiplexed I/O Port
• Hardware Data Protection
- Program/Erase Lockout During Power Transitions
• Reliable CMOS Floating-Gate Technology
- Endurance
: 100K Program/Erase Cycles
- Data Retention : 10 Years
• Command Register Operation
• Intelligent Copy-Back
• Unique ID for Copyright Protection
• Package
- K9E2G08B0M-YCB0/YIB0
48 - Pin TSOP I (12 X 20 / 0.5 mm pitch)
- K9E2G08B0M-VCB0/VIB0
48 - Pin WSOP I (12 X 17 X 0.7mm)
- K9E2G08B0M-PCB0/PIB0
48 - Pin TSOP I (12 X 20 / 0.5 mm pitch)- Pb-free Package
- K9E2G08B0M-FCB0/FIB0
48 - Pin WSOP I (12 X 17 X 0.7mm)- Pb-free Package
GENERAL DISCRIPTION
Offered in 256Mx8bits, the K9E2G08B0M is 2Gbit with spare 64Mbit capacity. The device is offered in 2.7 Vcc. Its NAND cell provides
the most cost-effective solutIon for the solid state mass storage market. A program operation can be performed in typical 200µs on
the 528-bytes and an erase operation can be performed in typical 2ms on a 16K-bytes block. Data in the page can be read out at
50ns cycle time per byte. The I/O pins serve as the ports for address and data input/output as well as command input. The on-chip
write control automates all program and erase functions including pulse repetition, where required, and internal verification and margining of data. Even the write-intensive systems can take advantage of the K9E2G08B0M′s extended reliability of 100K program/
erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm.
The K9E2G08B0M is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable
applications requiring non-volatility.
2
Advanced
FLASH MEMORY
K9E2G08B0M
PIN CONFIGURATION (TSOP1)
K9E2G08B0M-YCB0,PCB0/YIB0,PIB0
N.C
N.C
N.C
N.C
N.C
N.C
R/B
RE
CE
N.C
N.C
Vcc
Vss
N.C
N.C
CLE
ALE
WE
WP
N.C
N.C
N.C
N.C
N.C
N.C
N.C
N.C
N.C
I/O7
I/O6
I/O5
I/O4
N.C
N.C
N.C
Vcc
Vss
N.C
N.C
N.C
I/O3
I/O2
I/O1
I/O0
N.C
N.C
N.C
N.C
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
PACKAGE DIMENSIONS
48-PIN LEAD/LEAD FREE PLASTIC THIN SMALL OUT-LINE PACKAGE TYPE(I)
48 - TSOP1 - 1220AF
0.10
MAX
0.004
Unit :mm/Inch
#48
#24
#25
12.40
0.488 MAX
12.00
0.472
+0.003
( 0.25 )
0.010
#1
0.008-0.001
0.50
0.0197
0.16 -0.03
+0.075
18.40±0.10
0.724±0.004
0~8°
0.45~0.75
0.018~0.030
+0.003
0.005-0.001
0.25
0.010 TYP
1.00±0.05
0.039±0.002
0.125 0.035
+0.07
0.20 -0.03
+0.07
20.00±0.20
0.787±0.008
( 0.50 )
0.020
3
1.20
0.047MAX
0.05
0.002 MIN
Advanced
FLASH MEMORY
K9E2G08B0M
PIN CONFIGURATION (WSOP1)
K9E2G08B0M-VCB0,FCB0/VIB0,FIB0
N.C
N.C
DNU
N.C
N.C
N.C
R/B
RE
CE
DNU
N.C
Vcc
Vss
N.C
DNU
CLE
ALE
WE
WP
N.C
N.C
DNU
N.C
N.C
N.C
N.C
DNU
N.C
I/O7
I/O6
I/O5
I/O4
N.C
DNU
N.C
Vcc
Vss
N.C
DNU
N.C
I/O3
I/O2
I/O1
I/O0
N.C
DNU
N.C
N.C
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
PACKAGE DIMENSIONS
48-PIN LEAD PLASTIC VERY VERY THIN SMALL OUT-LINE PACKAGE TYPE (I)
48 - WSOP1 - 1217F
Unit :mm
0.70 MAX
0.58±0.04
15.40±0.10
#48
#24
#25
0.20
0.50TYP
(0.50±0.06)
12.40MAX
12.00±0.10
+0.07
-0.03
0.16
+0.07
-0.03
#1
0° ~
0.10 +0.075
-0.035
(0.01Min)
8°
0.45~0.75
17.00±0.20
4
Advanced
FLASH MEMORY
K9E2G08B0M
PIN DESCRIPTION
Pin Name
Pin Function
I/O0 ~ I/O7
DATA INPUTS/OUTPUTS
The I/O pins are used to input command, address and data, and to output data during read operations. The I/
O pins float to high-z when the chip is deselected or when the outputs are disabled.
CLE
COMMAND LATCH ENABLE
The CLE input controls the activating path for commands sent to the command register. When active high,
commands are latched into the command register through the I/O ports on the rising edge of the WE signal.
ALE
ADDRESS LATCH ENABLE
The ALE input controls the activating path for address to the internal address registers. Addresses are
latched on the rising edge of WE with ALE high.
CE
CHIP ENABLE
The CE input is the device selection control. When the device is in the Busy state, CE high is ignored, and
the device does not return to standby mode in program or erase opertion. Regarding CE control during read
operation, refer to ’Page read’ section of Device operation .
RE
READ ENABLE
The RE input is the serial data-out control, and when active drives the data onto the I/O bus. Data is valid
tREA after the falling edge of RE which also increments the internal column address counter by one.
WE
WRITE ENABLE
The WE input controls writes to the I/O port. Commands, address and data are latched on the rising edge of
the WE pulse.
WP
WRITE PROTECT
The WP pin provides inadvertent write/erase protection during power transitions. The internal high voltage
generator is reset when the WP pin is active low.
R/B
READY/BUSY OUTPUT
The R/B output indicates the status of the device operation. When low, it indicates that a program, erase or
random read operation is in process and returns to high state upon completion. It is an open drain output and
does not float to high-z condition when the chip is deselected or when outputs are disabled.
VccQ
OUTPUT BUFFER POWER
VCCQ is the power supply for Output Buffer.
VccQ is internally connected to Vcc, thus should be biased to Vcc.
Vcc
POWER
VCC is the power supply for device.
Vss
GROUND
N.C
NO CONNECTION
Lead is not internally connected.
DNU
DO NOT USE
Leave it disconnected.
NOTE : Connect all VCC and VSS pins of each device to common power supply outputs.
Do not leave VCC or VSS disconnected.
5
Advanced
FLASH MEMORY
K9E2G08B0M
Figure 1. K9E2G08B0M FUNCTIONAL BLOCK DIAGRAM
VCC
VSS
A9 - A27
X-Buffers
Latches
& Decoders
A0 - A7
Y-Buffers
Latches
& Decoders
2G + 64M Bits
NAND Flash
ARRAY
(512 + 16)Bytes x 524,288
Page Register & S/A
A8
Y-Gating
Command
Command
Register
I/O Buffers & Latches
Control Logic
& High Voltage
Generator
CE
RE
WE
VCC/VCCQ
VSS
Output
Driver
Global Buffers
I/0 0
I/0 7
CLE ALE WP
Figure 2. K9E2G08B0M ARRAY ORGANIZATION
1 Block = 32 Pages
= (16K + 512) Bytes
256K Pages
(=8,192 Blocks)
1st half Page Register
2nd half Page Register
(=256 Bytes)
(=256 Bytes)
1 Page = 528 Bytes
1 Block = 528 Bytes x 32 Pages
= (16K + 512) Bytes
1 Device = 528Bytes x 32Pages x 16,384 Blocks
= 2,112 Mbits
8 bits
512Bytes
16 Bytes
I/O 0 ~ I/O 7
Page Register
512 Bytes
I/O 0
I/O 1
16 Bytes
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
1st Cycle
A0
A1
A2
A3
A4
A5
A6
A7
2nd Cycle
A9
A10
A11
A12
A13
A14
A15
A16
3rd Cycle
A17
A18
A19
A20
A21
A22
A23
A24
4th Cycle
A25
A26
A27
*L
*L
*L
*L
*L
NOTE : Column Address : Starting Address of the Register.
00h Command(Read) : Defines the starting address of the 1st half of the register.
01h Command(Read) : Defines the starting address of the 2nd half of the register.
* A8 is set to "Low" or "High" by the 00h or 01h Command.
* L must be set to "Low".
* The device ignores any additional input of address cycles than reguired.
6
Column Address
Row Address
(Page Address)
Advanced
FLASH MEMORY
K9E2G08B0M
Product Introduction
The K9E2G08B0M is a 2,112Mbits(2,214,592,512 bits) memory organized as 524,288 rows(pages) by 528 columns. Spare sixteen
columns are located from column address of 512 to 527. A 528-bytes data register is connected to memory cell arrays accommodating data transfer between the I/O buffers and memory during page read and page program operations. The memory array is made up
of 16 cells that are serially connected to form a NAND structure. Each of the 16 cells resides in a different page. A block consists of
the 32 pages formed two NAND structures. A NAND structure consists of 16 cells. Total 1,056 NAND structures reside in a block. The
array organization is shown in Figure 2. The program and read operations are executed on a page basis, while the erase operation is
executed on a block basis. The memory array consists of 16,384 separately erasable 16K-bytes blocks. It indicates that the bit by bit
erase operation is prohibited on the K9E2G08B0M.
The K9E2G08B0M has addresses multiplexed into 8 I/O's. This scheme dramatically reduces pin counts and allows systems
upgrades to future densities by maintaining consistency in system board design. Command, address and data are all written through
I/O's by bringing WE to low while CE is low. Data is latched on the rising edge of WE. Command Latch Enable(CLE) and Address
Latch Enable(ALE) are used to multiplex command and address respectively, via the I/O pins. The 256M byte physical space requires
28 addresses, thereby requiring four cycles for byte-level addressing : 1 cycle of column address, 3 cycles of row address, in that
order. Page Read and Page Program need the same four address cycles following the required command input. In Block Erase operation, however, only the 3 cycles of row address are used. Device operations are selected by writing specific commands into the command register. Table 1 defines the specific commands of the K9E2G08B0M.
The device provides simultaneous program/erase capability up to four pages/blocks. By dividing the memory array into eight 256Mbit
separate planes, simultaneous multi-plane operation dramatically increases program/erase performance by 4X while still maintaining
the conventional 512 bytes structure. The extended pass/fail status for multi-plane program/erase allows system software to quickly
identify the failing page/block out of selected multiple pages/blocks. Usage of multi-plane operations will be described further throughout this document.
In addition to the enhanced architecture and interface, the device incorporates copy-back program feature from one page to another
of the same plane without the need for transporting the data to and from the external buffer memory. Since the time-consuming burstreading and data-input cycles are removed, system performance for solid-state disk application is significantly increased.
The device includes one block sized OTP(One Time Programmable), which can be used to increase system security or to provide
identification capabilities. Detailed information can be obtained by contact with Samsung.
Table 1. Command Sets
Function
1’st Cycle
2’nd
Cycle
3’rd
Cycle
4’th Cycle
5’th Cycle
Read 1
00h/01h(1)
-
-
-
-
Read 2
50h
-
-
-
-
Read ID
90h/91h
-
-
-
-
FFh
-
-
-
-
Page Program
(True)(2)
80h
10h
-
-
-
Page Program
(Dummy)(2)
80h
11h
-
-
-
00h
8Ah
10h
-
-
03h
8Ah
11h
-
-
Reset
Copy-Back Program(True)(2)
Copy-Back Program(Dummy)
Block Erase
Multi-Plane Block Erase
Read Status
Read Multi-Plane Status
(2)
Acceptable Command
during Busy
O
60h
D0h
-
-
-
60h----60h
D0h
-
-
-
70h
-
-
-
-
O
-
-
-
-
O
(3)
71h
NOTE : 1. The 00h/01h command defines starting address of the 1st/2nd half of registers.
After data access on the 2nd half of register by the 01h command, the status pointer is automatically moved to the 1st half register(00h)
on the next cycle.
2. Page Program(True) and Copy-Back Program(True) are available on 1 plane operation.
Page Program(Dummy) and Copy-Back Program(Dummy) are available on the 2nd, 3rd, 4th plane of multi-plane operation.
3. The 71h command should be used for read status of Multi Plane operation.
Caution : Any undefined command inputs are prohibited except for above command set of Table 1.
7
Advanced
FLASH MEMORY
K9E2G08B0M
Memory Map
The device is arranged in eight 256Mbit memory planes. Each plane contains 2,048 blocks and 528 byte page registers. This allows
it to perform simultaneous page program and block erase by selecting one page or block from each plane. The block address map is
configured so that multi-plane program/erase operations can be executed for every four sequential blocks by dividing the memory
array into plane 0~3 or plane 4~7 separately. For example, multi-plane program/erase operations into plane 2,3,4 and 5 are prohibited.
Figure 3. Memory Array Map
Plane 0
(2048 Block)
Block 0
Plane 2
(2048 Block)
Plane 1
(2048 Block)
Block 2
Block 1
Plane 3
(2048 Block)
Block 3
Page 0
Page 0
Page 0
Page 0
Page 1
Page 1
Page 1
Page 1
Page 30
Page 31
Page 30
Page 31
Page 30
Page 31
Page 30
Page 31
Block 8188
Block 8190
Block 8189
Block 8191
Page 0
Page 0
Page 0
Page 0
Page 1
Page 1
Page 1
Page 1
Page 30
Page 31
Page 30
Page 31
Page 30
Page 31
Page 30
Page 31
528byte Page Registers
528byte Page Registers
528byte Page Registers
528byte Page Registers
Plane 4
(2048 Block)
Plane 5
(2048 Block)
Plane 6
(2048 Block)
Plane 7
(2048 Block)
Block 8192
Block 8194
Block 8193
Block 8195
Page 0
Page 0
Page 0
Page 0
Page 1
Page 1
Page 1
Page 1
Page 30
Page 31
Page 30
Page 31
Page 30
Page 31
Page 30
Page 31
Block 16380
Block 16381
Block 16382
Block 16383
Page 0
Page 0
Page 0
Page 0
Page 1
Page 1
Page 1
Page 1
Page 30
Page 31
Page 30
Page 31
Page 30
Page 31
Page 30
Page 31
528byte Page Registers
528byte Page Registers
528byte Page Registers
528byte Page Registers
8
Advanced
FLASH MEMORY
K9E2G08B0M
ABSOLUTE MAXIMUM RATINGS
Parameter
Voltage on any pin relative to VSS
Temperature Under Bias
Storage Temperature
Symbol
Rating
VIN/OUT
-0.6 to +4.6
VCC/VCCQ
-0.6 to +4.6
K9E2G08B0M-XCB0
K9E2G08B0M-XCB0
K9E2G08B0M-XIB0
Short Circuit Current
V
-10 to +125
TBIAS
K9E2G08B0M-XIB0
Unit
°C
-40 to +125
TSTG
-65 to +150
°C
IOS
5
mA
NOTE :
1. Minimum DC voltage is -0.6V on input/output pins. During transitions, this level may undershoot to -2.0V for periods <30ns.
Maximum DC voltage on input/output pins is VCC+0.3V which, during transitions, may overshoot to VCC+2.0V for periods <20ns.
2. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions
as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
RECOMMENDED OPERATING CONDITIONS
(Voltage reference to GND at the condision of K9E2G08B0M-XCB0 : TA=0 to 70°C or K9E2G08B0M-XIB0 : TA=-40 to 85°C)
Parameter
Supply Voltage
Symbol
Min
Typ.
Max
Unit
VCC
2.5
2.7
2.9
V
VCCQ
2.5
2.7
2.9
V
VSS
0
0
0
V
DC AND OPERATING CHARACTERISTICS (Recommended operating conditions otherwise noted.)
Paramete
Operating
Current
Symbol
Test Conditions
Sequential Read
ICC1
tRC=50ns, CE=VIL, IOUT=0mA
-
10
20
Program
ICC2
-
-
10
20
Erase
ICC3
-
-
10
20
-
-
1
Stand-by Current(TTL)
ISB1
CE=VIH, WP=0V/VCC
Stand-by Current(CMOS)
ISB2
Min
Typ
Max
CE=VCC-0.2, WP=0V/VCC
-
20
100
Input Leakage Current
ILI
VIN=0 to Vcc(max)
-
-
±10
Output Leakage Current
ILO
VOUT=0 to Vcc(max)
-
-
±10
Input High Voltage
VIH
Input Low Voltage, All inputs
VIL
Output High Voltage Level
VOH
IOH=-100µA
VCCQ-0.4
-
-
Output Low Voltage Level
VOL
IOL=100uA
-
-
0.4
Output Low Current(R/B)
IOL(R/B)
VOL=0.1V
3
4
-
I/O pins
VCCQ-0.4
-
VCCQ+0.3
Except I/O pins
VCC-0.4
-
VCC+0.3
-0.3
-
0.5
-
Notes :
1. Typical values are measured at Vcc=2.7, TA=25°C. And not 100% tested.
9
Unit
mA
µA
V
mA
Advanced
FLASH MEMORY
K9E2G08B0M
VALID BLOCK
Parameter
Valid Block Number
Symbol
Min
Typ.
Max
Unit
NVB
16,104
-
16,384
Blocks
NOTE :
1. The K9E2G08B0M may include invalid blocks when first shipped. Additional invalid blocks may develop while being used. The number of valid blocks
is presented with both cases of invalid blocks considered. Invalid blocks are defined as blocks that contain one or more bad bits. Do not erase or
program factory-marked bad blocks. Refer to the attached technical notes for a appropriate management of invalid blocks.
2. The 1st block, which is placed on 00h block address, is fully guaranteed to be a valid block, does not require Error Correction up to 1K Program/Erase
cycle.
3. Minimum 2,013 valid blocks are guaranteed for each contiguous 256Mb memory space.
AC TEST CONDITION
(K9E2G08B0M-XCB0 :TA=0 to 70°C, K9E2G08B0M-XIB0:TA=-40 to 85°C)
Parameter
Value
Input Pulse Levels
0.4V to 2.4V
Input Rise and Fall Times
5ns
Input and Output Timing Levels
1.5V
Output Load
VccQ=2.7+/-10% : 1 TTL GATE and CL=30pF
CAPACITANCE(TA=25°C, VCC=2.7, f=1.0MHz)
Symbol
Test Condition
Min
Max
Unit
Input/Output Capacitance
Item
CI/O
VIL=0V
-
20
pF
Input Capacitance
CIN
VIN=0V
-
20
pF
NOTE : Capacitance is periodically sampled and not 100% tested.
MODE SELECTION
CLE
ALE
CE
H
L
L
H
H
L
L
L
L
L
L
L
H
L
L
L
H
X
X
X
X
X
X
X
X
RE
WP
L
H
X
L
H
X
L
L
H
H
H
L
H
H
H
H
Data Input
X
Data Output
H
X
During Read (Busy)
X
X
H
During Program (Busy)
X
X
H
During Erase (Busy)
L
Write Protect
X
(1)
X
WE
X
X
X
H
X
X
Mode
Read Mode
Write Mode
Command Input
Address Input (4 clocks)
Command Input
Address Input (4 clocks)
0V/VCC(2) Stand-by
NOTE : 1. X can be VIL or VIH.
2. WP should be biased to CMOS high or CMOS low for standby.
Program / Erase Characteristics
Parameter
Program Time
Dummy Busy Time for Multi Plane Program
Number of Partial Program Cycles
in the Same Page
Block Erase Time
Main Array
Spare Array
Symbol
Min
Typ
Max
Unit
tPROG
-
200
500
µs
1
10
µs
-
1
cycle
tDBSY
Nop
tBERS
-
-
2
cycle
-
2
3
ms
NOTE : 1.Typical program time is defined as the time within more than 50% of the whole pages are programmed at Vcc of 3.3V and 25°C
10
Advanced
FLASH MEMORY
K9E2G08B0M
AC Timing Characteristics for Command / Address / Data Input
Parameter
Symbol
Min
Max
Unit
CLE Set-up Time
tCLS
0
-
ns
CLE Hold Time
tCLH
5
-
ns
CE Setup Time
tCS
0
.-
ns
CE Hold Time
tCH
5
-
ns
WE Pulse Width
tWP
ALE Setup Time
tALS
ALE Hold Time
tALH
5
-
ns
Data Setup Time
tDS
20
-
ns
25 (1)
0
-
ns
-
ns
Data Hold Time
tDH
5
-
ns
Write Cycle Time
tWC
45
-
ns
WE High Hold Time
tWH
15
-
ns
NOTE :
1. If tCS is set less than 10ns, tWP must be minimum 35ns, otherwise, tWP may be minimum 25ns.
AC Characteristics for Operation
Symbol
Min
Max
Unit
Data Transfer from Cell to Register
Parameter
tR
-
15
µs
ALE to RE Delay
tAR
10
-
ns
CLE to RE Delay
tCLR
10
-
ns
Ready to RE Low
tRR
20
-
ns
RE Pulse Width
tRP
25
-
ns
WE High to Busy
tWB
-
100
ns
Read Cycle Time
tRC
50
-
ns
CE Access Time
tCEA
-
45
ns
RE Access Time
tREA
-
30
ns
RE High to Output Hi-Z
tRHZ
-
30
ns
CE High to Output Hi-Z
tCHZ
-
20
ns
RE or CE High to Output hold
tOH
15
-
ns
RE High Hold Time
tREH
15
-
ns
tIR
0
-
ns
WE High to RE Low
tWHR
60
-
ns
Device Resetting Time(Read/Program/Erase)
tRST
-
5/10/500(1)
µs
Last RE High to Busy(at sequential read)
tRB
-
100
ns
CE High to Ready(in case of interception by CE at read)
tCRY
-
50 + tr(R/B)(3)
ns
CE High Hold Time(at the last serial read)
tCEH
100
-
ns
Output Hi-Z to RE Low
(2)
NOTE :
1. If reset command(FFh) is written at Ready state, the device goes into Busy for maximum 5us.
2. To break the sequential read cycle, CE must be held high for longer time than tCEH.
3. The time to Ready depends on the value of the pull-up resistor tied R/B pin.
11
Advanced
FLASH MEMORY
K9E2G08B0M
NAND Flash Technical Notes
Initial Invalid Block(s)
Invalid blocks are defined as blocks that contain one or more initial invalid bits whose reliability is not guaranteed by Samsung. The
information regarding the initial invalid block(s) is so called as the initial invalid block information. Devices with initial invalid block(s)
have the same quality level as devices with all valid blocks and have the same AC and DC characteristics. An initial invalid block(s)
does not affect the performance of valid block(s) because it is isolated from the bit line and the common source line by a select transistor. The system design must be able to mask out the initial invalid block(s) via address mapping. The 1st block, which is placed on
00h block address, is fully guaranteed to be a valid block, does not require Error Correction up to 1K program/Erase cycles.
Identifying Initial Invalid Block(s)
All device locations are erased(FFh) except locations where the initial invalid block(s) information is written prior to shipping. The initial invalid block(s) status is defined by the 6th byte in the spare area. Samsung makes sure that either the 1st or 2nd page of every
initial invalid block has non-FFh data at the column address of 517. Since the initial invalid block information is also erasable in most
cases, it is impossible to recover the information once it has been erased. Therefore, the system must be able to recognize the initial
invalid block(s) based on the initial invalid block information and create the initial invalid block table via the following suggested flow
chart(Figure 4). Any intentional erasure of the initial invalid block information is prohibited.
Start
Set Block Address = 0
Increment Block Address
Create (or update)
Initial Invalid
Block(s) Table
No
*
Check "FFh" at the column address 517
of the 1st and 2nd page in the block
Check "FFh" ?
Yes
No
Last Block ?
Yes
End
Figure 4. Flow chart to create initial invalid block table.
12
Advanced
FLASH MEMORY
K9E2G08B0M
NAND Flash Technical Notes (Continued)
Error in write or read operation
Within its life time, the additional invalid blocks may develop with NAND Flash memory. Refer to the qualification report for the actual
data.The following possible failure modes should be considered to implement a highly reliable system. In the case of status read failure after erase or program, block replacement should be done. Because program status fail during a page program does not affect
the data of the other pages in the same block, block replacement can be executed with a page-sized buffer by finding an erased
empty block and reprogramming the current target data and copying the rest of the replaced block. In case of Read, ECC must be
employed. To improve the efficiency of memory space, it is recommended that the read or verification failure due to single bit error be
reclaimed by ECC without any block replacement. The said additional block failure rate does not include those reclaimed blocks.
Failure Mode
Write
Read
ECC
Detection and Countermeasure sequence
Erase Failure
Status Read after Erase --> Block Replacement
Program Failure
Status Read after Program --> Block Replacement
Single Bit Failure
Verify ECC -> ECC Correction
: Error Correcting Code --> Hamming Code etc.
Example) 1bit correction & 2bits detection
Program Flow Chart
Start
Write 80h
Write Address
Write Data
Write 10h
Read Status Register
I/O 6 = 1 ?
or R/B = 1 ?
*
Program Error
No
Yes
No
I/O 0 = 0 ?
Yes
Program Completed
*
13
: If program operation results in an error, map out
the block including the page in error and copy the
target data to another block.
Advanced
FLASH MEMORY
K9E2G08B0M
NAND Flash Technical Notes (Continued)
Erase Flow Chart
Read Flow Chart
Start
Start
Write 60h
Write 00h
Write Block Address
Write Address
Write D0h
Read Data
Read Status Register
ECC Generation
No
I/O 6 = 1 ?
or R/B = 1 ?
Reclaim the Error
*
No
Verify ECC
Yes
Yes
Erase Error
No
Page Read Completed
I/O 0 = 0 ?
Yes
Erase Completed
*
: If erase operation results in an error, map out
the failing block and replace it with another block.
Block Replacement
1st
∼
(n-1)th
nth
{
Block A
2
an error occurs.
(page)
1st
∼
(n-1)th
nth
Buffer memory of the controller.
{
Block B
1
(page)
* Step1. When an error happens in the nth page of the Block ’A’ during erase or program operation.
* Step2. Copy the nth page data of the Block ’A’ in the buffer memory to the nth page of another free block. (Block ’B’)
* Step3. Then, copy the data in the 1st ~ (n-1)th page to the same location of the Block ’B’.
* Step4. Do not further erase Block ’A’ by creating an ’invalid Block’ table or other appropriate scheme.
14
Advanced
FLASH MEMORY
K9E2G08B0M
Pointer Operation of K9E2G08B0M
Samsung NAND Flash has three address pointer commands as a substitute for the two most significant column addresses. ’00h’
command sets the pointer to ’A’ area(0~255byte), ’01h’ command sets the pointer to ’B’ area(256~511byte), and ’50h’ command sets
the pointer to ’C’ area(512~527byte). With these commands, the starting column address can be set to any of a whole
page(0~527byte). ’00h’ or ’50h’ is sustained until another address pointer command is inputted. ’01h’ command, however, is effective
only for one operation. After any operation of Read, Program, Erase, Reset, Power_Up is executed once with ’01h’ command, the
address pointer returns to ’A’ area by itself. To program data starting from ’A’ or ’C’ area, ’00h’ or ’50h’ command must be inputted
before ’80h’ command is written. A complete read operation prior to ’80h’ command is not necessary. To program data starting from
’B’ area, ’01h’ command must be inputted right before ’80h’ command is written.
Table 2. Destination of the pointer
Command
Pointer position
Area
00h
01h
50h
0 ~ 255 byte
256 ~ 511 byte
512 ~ 527 byte
1st half array(A)
2nd half array(B)
spare array(C)
"A" area
(00h plane)
"B" area
(01h plane)
"C" area
(50h plane)
256 Bytes
256 Bytes
16 Bytes
"A"
"B"
"C"
Internal
Page Register
Pointer select
commnad
(00h, 01h, 50h)
Pointer
Figure 5. Block Diagram of Pointer Operation
(1) Command input sequence for programming ’A’ area
The address pointer is set to ’A’ area(0~255), and sustained
Address / Data input
00h
80h
Address / Data input
10h
00h
’A’,’B’,’C’ area can be programmed.
It depends on how many data are inputted.
80h
10h
’00h’ command can be omitted.
(2) Command input sequence for programming ’B’ area
The address pointer is set to ’B’ area(256~511), and will be reset to
’A’ area after every program operation is executed.
Address / Data input
01h
80h
Address / Data input
10h
01h
’B’, ’C’ area can be programmed.
It depends on how many data are inputted.
80h
10h
’01h’ command must be rewritten before
every program operation
(3) Command input sequence for programming ’C’ area
The address pointer is set to ’C’ area(512~527), and sustained
Address / Data input
50h
80h
Address / Data input
10h
50h
Only ’C’ area can be programmed.
80h
’50h’ command can be omitted.
15
10h
Advanced
FLASH MEMORY
K9E2G08B0M
System Interface Using CE don’t-care.
For an easier system interface, CE may be inactive during the data-loading or sequential data-reading as shown below. The internal
528bytes page registers are utilized as separate buffers for this operation and the system design gets more flexible. In addition, for
voice or audio applications which use slow cycle time on the order of u-seconds, de-activating CE during the data-loading and reading would provide significant savings in power consumption.
Figure 6. Program Operation with CE don’t-care.
CLE
CE don’t-care
WE
≈
≈
CE
ALE
I/OX
80h
Start Add.(4Cycle)
tCS
Data Input
tCH
Data Input
10h
tCEA
CE
CE
RE
tWP
tREA
WE
I/OX
out
Figure 7. Read Operation with CE don’t-care.
CLE
On K9E2G08B0M-Y,P or K9E2G08B0M-V,F
CE must be held
low during tR
CE don’t-care
≈
CE
RE
ALE
tR
R/B
WE
I/OX
00h
Data Output(sequential)
Start Add.(4Cycle)
16
Advanced
FLASH MEMORY
K9E2G08B0M
* Command Latch Cycle
CLE
tCLS
tCLH
tCS
tCH
CE
tWP
WE
tALH
tALS
ALE
tDH
tDS
Command
I/OX
* Address Latch Cycle
tCLS
CLE
tCS
tWC
tWC
tWC
CE
tWP
tWP
WE
tWH
tALH tALS
tWH
tALH tALS
tALS
tWP
tWP
tWH
tALH tALS
tALH
ALE
tDS
I/OX
tDH
A0~A7
tDS
tDH
A9~A16
17
tDS
tDH
A17~A24
tDS
tDH
A25~A27
Advanced
FLASH MEMORY
K9E2G08B0M
* Input Data Latch Cycle
tCLH
CLE
tCH
CE
tWC
tALS
ALE
tWP
tWH
tDH
tDS
tDH
tDS
tDH
≈
tDS
tWP
≈
tWP
WE
I/Ox
DIN n
DIN 1
≈
DIN 0
* Serial access Cycle after Read(CLE=L, WE=H, ALE=L)
tRC
≈
CE
tREA
tREA
≈
tREH
tCHZ*
tOH
tREA
RE
tRHZ*
tRHZ*
I/Ox
Dout
Dout
≈
tOH
Dout
≈
tRR
R/B
NOTES : Transition is measured ±200mV from steady state voltage with load.
This parameter is sampled and not 100% tested.
18
Advanced
FLASH MEMORY
K9E2G08B0M
* Status Read Cycle
tCLR
CLE
tCLS
tCLH
tCS
CE
tCH
tWP
WE
tCEA
tCHZ
tOH
tWHR
RE
tDH
tDS
I/OX
tRHZ
tREA
tIR
tOH
Status Output
70h
READ1 OPERATION(READ ONE PAGE)
CLE
≈ ≈
1)
CE
tCEH
On K9E2G08B0M-Y,P or K9E2G08B0M-V,F
CE must be held
low during tR
tCHZ
tOH
≈
tWC
WE
≈ ≈
tWB
ALE
tCRY
tAR
tR
tRHZ
tOH
≈
tRC
N Address
≈
RE
A9 ~ A16
Column
Address
R/B
A17 ~ A24
A25 ~ A27
Page(Row)
Address
Busy
Dout N
Dout N+1 Dout N+2
≈ ≈
00h or 01h A0 ~ A7
≈
I/OX
≈
tRR
Dout m
tRB
1)
NOTES : 1) is only valid on K9E2G08B0M-Y,P or K9E2G08B0M-V,F
19
Advanced
FLASH MEMORY
K9E2G08B0M
Read1 Operation(Intercepted by CE)
CLE
≈ ≈
On K9E2G08B0M-Y,P or K9E2G08B0M-V,F
CE must be held
low during tR
≈
CE
WE
≈ ≈
tWB
ALE
tCHZ
tOH
tAR
tRC
≈
tR
RE
I/OX
00h or 01h
A0 ~ A7
A9 ~ A16
A17 ~ A24
A25 ~ A27
≈
tRR
Dout N
Dout N+1
Dout N+2
Page(Row)
Address
Column
Address
Busy
≈
R/B
Read2 Operation(Read One Page)
CLE
On K9E2G08B0M-Y,P or K9E2G08B0M-V,F
CE must be held
low during tR
CE
WE
tR
tWB
ALE
tAR
RE
I/OX
50h
A0 ~ A7
Dout
n+M
A9 ~ A16 A17 ~ A24 A25 ~ A27
R/B
≈
≈
tRR
n+m
Selected
Row
M Address
A0~A3 : Valid Address
A4~A7 : Don′t care
512
16
Start
address M
20
Advanced
FLASH MEMORY
K9E2G08B0M
Sequential Row Read Operation ( Within a Block )
≈
CLE
≈ ≈
CE
WE
≈
≈
≈
Dout
1
Dout
527
≈
≈
Busy
Dout
0
≈
≈
Dout
527
Ready
Busy
R/B
Dout
N+1
Dout
N
≈
A0 ~ A7 A9 ~ A16 A17 ~ A24 A25 ~ A27
≈
≈
00h
≈
RE
I/OX
≈
≈
ALE
M
M+1
N
Output
Output
Page Program Operation
CLE
CE
tWC
≈
tWC
tWC
WE
tWB
tPROG
ALE
I/OX
80h
A0 ~ A7 A9 ~ A16 A17 ~ A24 A25 ~ A27
Sequential Data Column
Input Command Address
Page(Row)
Address
≈ ≈
RE
Din
Din
10h
N
527
1 up to 528 Byte Data Program
Command
Serial Input
≈
R/B
70h
21
I/O0
Read Status
Command
I/O0=0 Successful Program
I/O0=1 Error in Program
Advanced
FLASH MEMORY
K9E2G08B0M
BLOCK ERASE OPERATION(ERASE ONE BLOCK)
CLE
CE
tWC
WE
tWB
tBERS
ALE
RE
I/OX
60h
A9 ~ A16 A17 ~ A24 A25 ~ A27
DOh
70h
I/O 0
Page(Row)
Address
Busy
R/B
Erase Setup Command
Erase Command
22
Read Status
Command
I/O0=0 Successful Erase
I/O0=1 Error in Erase
23
R/B
I/OX
RE
ALE
WE
CE
CLE
Sequential Data
Input Command
80h
tWC
Max. three times repeatable
Page(Row)
Address
Din
m
tDBSY :
typ. 1us
max. 10us
tDBSY
80h
I/O0~7
R/B
80h
A0 ~ A7 & A9 ~ A27
528 Byte Data
Address &
Data Input
11h
tDBSY
80h
A0 ~ A7 & A9 ~ A27
528 Byte Data
Address &
Data Input
11h
80h
Din
N
A0 ~ A7 & A9 ~ A27
528 Byte Data
Address &
Data Input
11h
tDBSY
Last Plane Input & Program
A0 ~ A7 A9 ~ A16 A17 ~ A24 A25 ~ A27
tDBSY
Ex.) Four-Plane Page Program into Plane 0~3 or Plane 4~7
Column
Address
Din
N
tWB
11h
Program
1 up to 528 Byte Data Command
(Dummy)
Serial Input
A0 ~ A7 A9 ~ A16 A17 ~ A24 A25 ~ A27
≈
≈ ≈
≈
≈ ≈
≈
≈
≈
≈
≈
≈
≈ ≈
tPROG
A0 ~ A7 & A9 ~ A27
528 Byte Data
Address &
Data Input
10h
Program Confirm
Command
(True)
80h
Din
527
tWB
≈
≈ ≈
≈
≈
≈
≈
≈
Multi-Plane Page Program Operation
tPROG
10h
I/O
71h
Read Multi-Plane
Status Command
71h
K9E2G08B0M
Advanced
FLASH MEMORY
Advanced
FLASH MEMORY
K9E2G08B0M
Multi-Plane Block Erase Operation into Plane 0~3 or Plane 4~7
CLE
CE
tWC
WE
tBERS
tWB
ALE
RE
I/OX
60h
A9 ~ A16 A17 ~ A24 A25 ~ A27
DOh
71h
I/O 0
Page(Row)
Address
Busy
R/B
Erase Setup Command
Erase Confirm Command
I/O0=0 Successful Erase
I/O0=1 Error in Erase
Read Multi-Plane
Status Command
Max. 4 times repeatable
* For Multi-Plane Erase operation, Block address to be erased should be repeated before "D0H" command.
Ex.) Four-Plane Block Erase Operation
R/B
I/O0~7
tBERS
60h
Address
60h
A9 ~ A27
60h
A9 ~ A27
60h
A9 ~ A27
24
A9 ~ A27
D0h
71h
Advanced
FLASH MEMORY
K9E2G08B0M
Read ID Operation (90 ID)
CLE
CE
WE
ALE
RE
tREA
I/OX
90h
Read ID Command
00h
ECh
71h
Maker Code Device Code
Address. 1cycle
ID Defintition Table
90 ID : Access command = 90H
1st Byte
2nd Byte
3rd Byte
4th Byte
Value
Description
ECh
71h
A5h
C0h
Maker Code
Device Code
Must be don’t -cared
Supports Multi Plane Operation
Read ID Operation (91 ID)
CLE
CE
WE
ALE
RE
tREA
I/OX
91h
Read ID Command
00h
Address. 1cycle
20h
Extended ID Code
25
A5h
C0h
Multi Plane Code
Advanced
FLASH MEMORY
K9E2G08B0M
≈ ≈ ≈ ≈
CLE
CE
tWC
WE
On K9E2G08B0M-Y,P or K9E2G08B0M-V,F
CE must be held low during tR
tWB
tWB tPROG
≈ ≈
ALE
≈≈ ≈ ≈ ≈ ≈ ≈
Copy-Back Program Operation
R/B
Page(Row)
Address
8Ah
A0~A7 A9~A16 A17~A24 A25~A27 10h
Column
Address
Busy
Page(Row)
Address
≈
A0~A7 A9~A16 A17~A24 A25~A27
Column
Address
70h
I/O0
Read Status
Command
Busy
≈
00h
≈
I/OX
≈
RE
≈≈
tR
Copy-Back Data
Input Command
26
I/O0=0 Successful Program
I/O0=1 Error in Program
Advanced
FLASH MEMORY
K9E2G08B0M
Device Operation
PAGE READ
Upon initial device power up, the device defaults to Read1 mode. This operation is also initiated by writing 00h to the command register along with four address cycles. Once the command is latched, it does not need to be written for the following page read operation.
Three types of operations are available : random read, serial page read and sequential row read.
The random read mode is enabled when the page address is changed. The 528 bytes of data within the selected page are transferred
to the data registers in less than 15µs(tR). The system controller can detect the completion of this data transfer(tR) by analyzing the
output of R/B pin. If CE goes high before the device returns to Ready, the random read operation is interrupted and Busy returns to
Ready as the defined by tCRY. Since the operation was aborted, the serial page read does not output valid data. Once the data in a
page is loaded into the registers, they may be read out in 50ns cycle time by sequentially pulsing RE. High to low transitions of the RE
clock output the data stating from the selected column address up to the last column address.
The way the Read1 and Read2 commands work is like a pointer set to either the main area or the spare area. The spare area of 512
to 527 byte may be selectively accessed by writing the Read2 command. Addresses A0 to A3 set the starting address of the spare
area while addresses A4 to A7 are ignored. The Read1 command(00h/01h) is needed to move the pointer back to the main area. Figures 8 to 10 show typical sequence and timings for each read operation.
After the data of last column address is clocked out, the next page is automatically selected for sequential row read. Waiting 12µs
again allows reading the selected page. The sequential row read operation is terminated by bringing CE high. Unless the operation
is aborted, the page address is automatically incremented for sequential row read as in Read1 operation and spare sixteen bytes of
each page may be sequentially read. The Sequential Read 1 and 2 operation is allowed only within a block and after the last page of
a block is readout, the sequential read operation must be terminated by bringing CE high. When the page address moves onto the
next block, read command and address must be given. Figures 9, 10 show typical sequence and timings for sequential row read
operation.
Figure 8-1. Read1 Operation
CLE
CE
WE
ALE
tR
R/B
RE
I/O0~7
00h
Data Output(Sequential)
Start Add.(4Cycle)
A0 ~ A7 & A9 ~ A27
(00h Command)
1)
(01h Command)
1st half array
Main array
Data Field
Spare Field
2st half array
Data Field
Spare Field
NOTE :
1) After data access on 2nd half array by 01h command, the start pointer is automatically moved to 1st half array (00h) at next cycle.
27
Advanced
FLASH MEMORY
K9E2G08B0M
Figure 8-2. Read2 Operation
CLE
On K9E2G08B0M-Y,P or K9E2G08B0M-V,F
CE must be held low during tR
CE
WE
ALE
tR
R/B
RE
50h
I/OX
Data Output(Sequential)
Start Add.(4Cycle)
A0 ~ A3 & A9 ~ A27
(A4 ~ A7 : Don’t care)
Spare Field
Main array
Data Field
Spare Field
Figure 9. Sequential Row Read1 Operation
I/OX
00h
01h
Start Add.(4Cycle)
Data Output
A0 ~ A7 & A9 ~ A27
1st
Data Output
Data Output
2nd
(528 Byte)
Nth
(528 Byte)
( 01h Command)
( 00h Command)
1st half array
tR
≈
tR
tR
R/B
2nd half array
1st half array
2nd half array
1st
2nd
Nth
Block
Data Field
1st
2nd
Nth
Data Field
Spare Field
Spare Field
The Sequential Read 1 and 2 operation is allowed only within a block and after the last page of a block is readout, the sequential read operation must be terminated by bringing CE high. When the page address moves onto
the next block, read command and address must be given.
28
Advanced
FLASH MEMORY
K9E2G08B0M
Figure 10. Sequential Row Read2 Operation
I/OX
50h
Start Add.(4Cycle)
≈
tR
tR
R/B
Data Output
A0 ~ A3 & A9 ~ A27
(A4 ~ A7 : Don’t Care)
1st
tR
Data Output
Data Output
2nd
(16Byte)
Nth
(16Byte)
1st
Block
Nth
Data Field
Spare Field
PAGE PROGRAM
The device is programmed basically on a page basis, but it does allow multiple partial page programing of a byte or consecutive bytes
up to 528 byte, in a single page program cycle. The number of consecutive partial page programming operation within the same page
without an intervening erase operation must not exceed 1 for main array and 2 for spare array. The addressing may be done in any
random order in a block. A page program cycle consists of a serial data loading period in which up to 528 bytes of data may be loaded
into the page register, followed by a non-volatile programming period where the loaded data is programmed into the appropriate cell.
Serial data loading can be started from 2nd half array by moving pointer. About the pointer operation, please refer to the attached
technical notes.
The serial data loading period begins by inputting the Serial Data Input command(80h), followed by the four cycle address input and
then serial data loading. The bytes other than those to be programmed do not need to be loaded.The Page Program confirm command(10h) initiates the programming process. Writing 10h alone without previously entering the serial data will not initiate the programming process. The internal write state control automatically executes the algorithms and timings necessary for program and
verify, thereby freeing the system controller for other tasks. Once the program process starts, the Read Status Register command
may be entered, with RE and CE low, to read the status register. The system controller can detect the completion of a program cycle
by monitoring the R/B output, or the Status bit(I/O 6) of the Status Register. Only the Read Status command and Reset command are
valid while programming is in progress. When the Page Program is complete, the Write Status Bit(I/O 0) may be checked(Figure 11).
The internal write verify detects only errors for "1"s that are not successfully programmed to "0"s. The command register remains in
Read Status command mode until another valid command is written to the command register.
Figure 11. Program & Read Status Operation
tPROG
R/B
I/O0~7
80h
Address & Data Input
10h
70h
I/O0
A0 ~ A7 & A9 ~ A27
528 Bytes Data
Fail
29
Pass
Advanced
FLASH MEMORY
K9E2G08B0M
BLOCK ERASE
The Erase operation is done on a block(16K Bytes) basis. Block address loading is accomplished in three cycles initiated by an
Erase Setup command(60h). Only address A14 to A27 is valid while A9 to A13 is ignored. The Erase Confirm command(D0h) following
the block address loading initiates the internal erasing process. This two-step sequence of setup followed by execution command
ensures that memory contents are not accidentally erased due to external noise conditions.
At the rising edge of WE after the erase confirm command input, the internal write controller handles erase and erase-verify. When
the erase operation is completed, the Write Status Bit(I/O 0) may be checked. Figure 12 details the sequence.
Figure 12. Block Erase Operation
tBERS
R/B
I/OX
60h
Address Input(3Cycle)
Pass
I/O0
70h
D0h
Block Add. : A14 ~ A27
Fail
Multi-Plane Page Program into Plane 0~3 or Plane 4~7
Multi-Plane Page Program is an extension of Page Program, which is executed for a single plane with 528 bytes page register. Since
the device is equipped with four memory planes, activating the four sets of 528 bytes page register enables a simultaneous programming of four pages. Partial activation of four planes is also permitted.
After writing the first set of data up to 528 byte into the selected page register, Dummy Page Program command (11h) instead of
actual Page Program (10h) is inputted to finish data-loading of the current plane and move to the next plane. Since no programming
process is involved, R/B remains in Busy state for a short period of time(tDBSY). Read Status command (standard 70h or alternate
71h) may be issued to find out when the device returns to Ready state by polling the Ready/Busy status bit(I/O 6). Then the next set
of data for one of the other planes is inputted with the same command and address sequences. After inputting data for the last plane,
actual True Page Program (10h) instead of dumy Page Program command (11h) must be followed to start the programming process.
The operation of R/B and Read Status is the same as that of Page Program. Since maximum four pages are programmed simultaneously, pass/fail status is available for each page when the program operation completes. The extended status bits (I/O1 through I/
O 4) are checked by inputting the Read Multi-Plane Status Register. Status bit of I/O 0 is set to "1" when any of the pages fails. MultiPlane page Program with "01h" pointer is not supported, thus prohibited.
Figure 13. Four-Plane Page Program
tDBSY
R/B
I/OX
80h
Address &
11h
Data Input
A0 ~ A7 & A9 ~ A27
tDBSY
80h
Address &
Data Input
tPROG
tDBSY
11h
80h
11h
80h
Address &
Data Input
11h
80h
11h
80h
Address &
Data Input
10h
528 bytes
Data
Input
80h
11h
Plane 0
(2,048 Blocks)
80h
Plane 2
(2,048 Blocks)
Plane 1
(2,048 Blocks)
10h
Plane 3
(2,048 Blocks)
Block 0
Block 1
Block 2
Block 3
Block 4
Block 5
Block 6
Block 7
Block 8,184
Block 8,188
Block 8,186
Block 8,190
Block 8,185
Block 8,189
30
Block 8,187
Block 8,191
71h
Advanced
FLASH MEMORY
K9E2G08B0M
Restriction in addressing with Multi Plane Page Program
While any block in each plane may be addressable for Multi-Plane Page Program, the five least significant addresses(A9-A13) for
the selected pages at one operation must be the same. Figure 14 shows an example where 2nd page of each addressed block is
selected for four planes. However, any arbitrary sequence is allowed in addressing multiple planes as shown in Figure15.
Figure 14. Multi-Plane Program & Read Status Operation
Block 0
Plane 3
(2,048 Blocks)
Plane 2
(2,048 Blocks)
Plane 1
(2,048 Blocks)
Plane 0
(2,048 Blocks)
Block 2
Block 1
Block 3
Page 0
Page 0
Page 0
Page 0
Page 1
Page 1
Page 1
Page 1
Page 30
Page 31
Page 30
Page 31
Page 30
Page 31
Page 30
Page 31
Figure 15. Addressing Multiple Planes
80h
Plane 2
11h
Plane 0
80h
80h
11h
Plane3
11h
80h
Plane 1
10h
Figure 16. Multi-Plane Page Program & Read Status Operation
tPROG
R/B
Last Plane input
I/O0~7
80h
Address & Data Input
10h
Pass
I/O
71h
A0 ~ A7 & A9 ~ A27
528 bytes
Fail
Multi-Plane Block Erase into Plane 0~3 or Plane 4~7
Basic concept of Multi-Plane Block Erase operation is identical to that of Multi-Plane Page Program. Up to four blocks, one from each
plane can be simultaneously erased. Standard Block Erase command sequences (Block Erase Setup command followed by three
address cycles) may be repeated up to four times for erasing up to four blocks. Only one block should be selected from each plane.
The Erase Confirm command initiates the actual erasing process. The completion is detected by analyzing R/B pin or Ready/Busy
status (I/O 6). Upon the erase completion, pass/fail status of each block is examined by reading extended pass/fail status(I/O 1
through I/O 4).
Figure 17. Four Block Erase Operation
R/B
I/OX
tBERS
60h
Address
(3 Cycle)
60h
Address
(3 Cycle)
60h
Address
(3 Cycle)
60h
Address
(3 Cycle)
D0h
71h
I/O
A0 ~ A7 & A9 ~ A27
Fail
31
Pass
Advanced
FLASH MEMORY
K9E2G08B0M
Copy-Back Program
The copy-back program is configured to quickly and efficiently rewrite data stored in one page within the plane to another page within
the same plane without utilizing an external memory. Since the time-consuming sequently-reading and its re-loading cycles are
removed, the system performance is improved. The benefit is especially obvious when a portion of a block is updated and the rest of
the block also need to be copied to the newly assigned free block. The operation for performing a copy-back program is a sequential
execution of page-read without burst-reading cycle and copying-program with the address of destination page. A normal read operation with "00h" command and the address of the source page moves the whole 528bytes data into the internal page registers. As
soon as the device returns to Ready state, Page-Copy Data-input command (8Ah) with the address cycles of destination page followed may be written. The Program Confirm command (10h) is required to actually begin the programming operation. Copy-Back
Program operation is allowed only within the same memory plane. Once the Copy-Back Program is finished, any additional partial
page programming into the copied pages is prohibited before erase. A14, A15 and A27 must be the same between source and target
page. Figure18 shows the command sequence for single plane operation. "When there is a program-failure at Copy-Back operation,
error is reported by pass/fail status. But, if Copy-Back operations are accumulated over time, bit error due to charge loss is not
checked by external error detection/correction scheme. For this reason, two bit error correction is recommended for the use of CopyBack operation."
Figure 18. 1-page Copy-Back program Operation
tR
R/B
I/OX
00h
Add.(4Cycles)
A0 ~ A7 & A9 ~ A27
Source Address
tPROG
8Ah
Add.(4Cycles)
A0 ~ A7 & A9 ~ A27
Destination Address
32
10h
70h
I/O0
Fail
Pass
Advanced
FLASH MEMORY
K9E2G08B0M
Multi-Plane Copy-Back Program
Multi-Plane Copy-Back Program is an extension of one page Copy-Back Program into four plane operation. Since the device is
equipped with four memory planes, activating the four sets of 528 bytes page registers enables a simultaneous Multi-Plane CopyBack programming of four pages. Partial activation of four planes is also permitted.
First, normal read operation with the "00h"command and address of the source page moves the whole 528 byte data into internal
page buffers. Any further read operation for transferring the addressed pages to the corresponding page register must be executed
with "03h" command instead of "00h" command. Any plane may be selected without regard to "00h" or "03h". Up to four planes may
be addressed. Data moved into the internal page registers are loaded into the destination plane addresses. After the input of command sequences for reading the source pages, the same procedure as Multi-Plane Page programming except for a replacement
address command with "8Ah" is executed. Since no programming process is involved during data loading at the destination plane
address , R/B remains in Busy state for a short period of time(tDBSY). Read Status command (standard 70h or alternate 71h) may
be issued to find out when the device returns to Ready state by polling the Ready/Busy status bit(I/O 6). After inputting data for the
last plane, actual True Page Program (10h) instead of dummy Page Program command (11h) must be followed to start the programming process. The operation of R/B and Read Status is the same as that of Page Program. Since maximum four pages are programmed simultaneously, pass/fail status is available for each page when the program operation completes. No pointer operation is
supported with Multi-Plane Copy-Back Program. Once the Multi-Plane Copy-Back Program is finished, any additional partial page
programming into the copied pages is prohibited before erase once the Multi-Plane Copy-Back Program is finished.
Figure 19. 4-plane Copy-Back Program
Max Three Times Repeatable
Source
Address
Input
00h
Plane 0
(2,048 Blocks)
Block 1
Block 5
4089
Block 8,185
Block 8,189
Block 8,184
Block 8,188
Plane 3
(2,048 Blocks)
Plane 2
(2,048 Blocks)
Plane 1
(2,048 Blocks)
Block 0
Block 4
03h
03h
03h
Block 2
Block 3
Block 6
Block 7
Block 8,187
Block 8,191
Block 8,186
Block 8,190
Max Three Times Repeatable
Destination
Address
Input
8Ah
11h
Plane 0
(2,048 Blocks)
Block 0
Block 4
Block 8,184
Block 8,188
8Ah
11h
Plane 1
(2,048 Blocks)
8Ah
11h
Plane 2
(2,048 Blocks)
8Ah
10h
Plane 3
(2,048 Blocks)
Block 1
Block 2
Block 3
Block 5
Block 6
Block 7
Block 8,185
Block 8,189
33
Block 8,186
Block 8,190
Block 8,187
Block 8,191
I/OX
00h
03h
tR
A0 ~ A7 & A9 ~ A27
Source Address
Add.( 4Cyc.)
03h
tR
A0 ~ A7 & A9 ~ A27
Source Address
Add.( 4Cyc.)
Max. 4 times ( 4 Cycle Source Address Input) repeatable
tR : Normal Read Busy
A0 ~ A7 & A9 ~ A27
Source Address
Add.(4Cyc.)
tR
≈
≈
R/B
tDBSY
Add.(4Cyc.)
11h
Max. 4 times (4 Cycle Destination Address Input) repeatable
tPROG
Add.(4Cyc.) 10h
A0 ~ A7 & A9 ~ A27
Destination Address
8Ah
tDBSY
A0 ~ A7 & A9 ~ A27
Destination Address
8Ah
tDBSY : Typical 1us, Max 10us
A0 ~ A7 & A9 ~ A27
Destination Address
Add.(4Cyc.) 11h
≈
≈
8Ah
≈
≈
Figure 20. Four-Plane Copy-Back Page Program (Continued)
71h
K9E2G08B0M
Advanced
FLASH MEMORY
34
Advanced
FLASH MEMORY
K9E2G08B0M
READ STATUS
The device contains a Status Register which may be read to find out whether program or erase operation is completed, and whether
the program or erase operation is completed successfully. After writing 70h command to the command register, a read cycle outputs
the content of the Status Register to the I/O pins on the falling edge of CE or RE, whichever occurs last. This two line control allows
the system to poll the progress of each device in multiple memory connections even when R/B pins are common-wired. RE or CE
does not need to be toggled for updated status. Refer to table 4 for specific Status Register definitions. The command register
remains in Status Read mode until further commands are issued to it. Therefore, if the status register is read during a random read
cycle, a read command(00h or 50h) should be given before sequential page read cycle.
For Read Status of Multi Plane Program/Erase, the Read Multi-Plane Status command(71h) should be used to find out whether
multi-plane program or erase operation is completed, and whether the program or erase operation is completed successfully. The
pass/fail status data must be checked only in the Ready condition after the completion of Multi-Plane program or erase operation.
Table4. Read Staus Register Definition
I/O No.
Status
Definition by 70h Command
I/O 0
Total Pass/Fail
I/O 1
Plane 0 Pass/Fail
I/O 2
Plane 1 Pass/Fail
I/O 3
I/O 4
Pass : "0"
Definition by 71h Command
Fail : "1"
Pass : "0"(1)
Fail : "1"
Must be don’t -cared
(2)
Pass : "0"
Fail : "1"
Must be don’t -cared
Pass : "0"(2)
Fail : "1"
Plane 2 Pass/Fail
Must be don’t -cared
(2)
Pass : "0"
Fail : "1"
Plane 3 Pass/Fail
Must be don’t -cared
Pass : "0"(2)
Fail : "1"
I/O 5
Reserved
I/O 6
Device Operation
Must be don’t -cared
I/O 7
Write Protect
Must be don’t-cared
Busy : "0"
Ready : "1"
Protected : "0"
Not Protected : "1"
Busy : "0"
Ready : "1"
Protected : "0"
Not Protected : "1"
NOTE : 1. I/O 0 describes combined Pass/Fail condition for all planes. If any of the selected multiple pages/blocks fails in Program/
Erase operation, it sets "Fail" flag.
2. The pass/fail status applies only to the corresponding plane.
Read ID
The device has 2 types of Read ID command, i.e. Read ID (1) command 90h and Read ID (2) command 91h.
The device contains a product identification mode, initiated by writing 90h to the command register, followed by an address input of
00h. Four read cycles sequentially output the manufacture code(ECh), and the device code (79h), Reserved(A5h), Multi plane operation code(C0h) respectively. A5h must be don’t-cared. C0h means that device supports Multi Plane operation. The command register remains in Read ID mode until further commands are issued to it.
Read ID (2) command 91h provides Multi-Plane(4-Plane) operations availability. If ID code read out by 91h is 20h, it indicates the
device has Multi-Plane(4-Plane) operations.
Figure 21-1 & 21-2 show the operation sequence.
Figure 21-1. Read ID (1) Operation
CLE
tCEA
CE
WE
tAR
ALE
RE
I/O0~7
tWHR
90h
00h
Address. 1cycle
tREA
ECh
Maker code
35
71h
Device code
A5h
C0h
Multi-Plane code
Advanced
FLASH MEMORY
K9E2G08B0M
Figure 21-2. Read ID (2) Operation
CLE
tCEA
CE
WE
tAR
ALE
RE
I/O0~7
tWHR
91h
00h
tREA
20h
Extended ID Code
Address. 1cycle
RESET
The device offers a reset feature, executed by writing FFh to the command register. When the device is in Busy state during random
read, program or erase mode, the reset operation will abort these operations. The contents of memory cells being altered are no
longer valid, as the data will be partially programmed or erased. The command register is cleared to wait for the next command, and
the Status Register is cleared to value C0h when WP is high. Refer to table 5 for device status after reset operation. If the device is
already in reset state a new reset command will not be accepted by the command register. The R/B pin transitions to low for tRST
after the Reset command is written. Refer to Figure 22 below.
Figure 22. RESET Operation
tRST
R/B
I/O0~7
FFh
Table5. Device Status
Operation Mode
After Power-up
After Reset
Read 1
Waiting for next command
36
Advanced
FLASH MEMORY
K9E2G08B0M
READY/BUSY
The device has a R/B output that provides a hardware method of indicating the completion of a page program, erase and random
read completion. The R/B pin is normally high but transitions to low after program or erase command is written to the command register or random read is started after address loading. It returns to high when the internal controller has finished the operation. The pin is
an open-drain driver thereby allowing two or more R/B outputs to be Or-tied. Because pull-up resistor value is related to tr(R/B) and
current drain during busy(ibusy) , an appropriate value can be obtained with the following reference chart(Fig 23). Its value can be
determined by the following guidance.
Rp
VCC
ibusy
Ready Vcc
R/B
open drain output
VOH
VOL : 0.4V, VOH : 2.4V
CL
VOL
Busy
tf
tr
GND
Device
300n
2.3
3m
Ibusy
200n
100n
2m
1.1
30
2.3
tr
tf
1K
0.75
2.3
2.3
2K
120
90
60
Ibusy [A]
tr,tf [s]
@ Vcc = 2.7V, Ta = 25°C , CL = 30pF
1m
2.3
0.55
4K
3K
Rp(ohm)
Fig 23 Rp vs tr ,tf & Rp vs ibusy
Rp value guidance
Rp(min) =
2.5V
VCC(Max.) - VOL(Max.)
IOL + ΣIL
=
8mA + ΣIL
where IL is the sum of the input currents of all devices tied to the R/B pin.
Rp(max) is determined by maximum permissible limit of tr
37
Advanced
FLASH MEMORY
K9E2G08B0M
Data Protection & Power-up sequence
The device is designed to offer protection from any involuntary program/erase during power-transitions. An internal voltage detector
disables all functions whenever Vcc is below about 1.8V. WP pin provides hardware protection and is recommended to be kept at VIL
during power-up and power-down. A recovery time of minimum 10µs is required before internal circuit gets ready for any command
sequences as shown in Figure 24. The two step command sequence for program/erase provides additional software protection.
≈
Figure 24. AC Waveforms for Power Transition
~ 2.0V
High
≈
VCC
WE
10µs
≈
≈
WP
38
~ 2.0V