Ordering number : ENN5507B 2SA1875 / 2SC4976 PNP / NPN Epitaxial Planar Silicon Transistors 2SA1875 / 2SC4976 High-Definition CRT Display Video Output Applications 1.5 2.3 0.5 1.2 7.5 5.5 0.8 1.6 0.85 0.7 0.6 0.5 1 2 1 : Base 2 : Collector 3 : Emitter 4 : Collector 3 2.3 SANYO : TP 2.3 unit : mm 2044B [2SA1875 / 2SC4976] 6.5 5.0 4 2.3 1.5 0.5 0.5 0.85 1 0.6 2.3 2 1.2 • [2SA1875 / 2SC4976] 6.5 5.0 4 7.0 • unit : mm 2045B 5.5 • High fT : fT=400MHz(typ). High breakdown voltage : VCEO≥200V(min). Large current capacitance. Small reverse transfer capacitance and excellent high -frequency characteristic : Cre=3.4pF(NPN), 4.2pF(PNP). Adoption of FBET process. 2.5 • Package Dimensions 0.8 • 7.0 Features 3 1.2 0 to 0.2 1 : Base 2 : Collector 3 : Emitter 4 : Collector SANYO : TP-FA 2.3 Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 52101 TS IM TA-9766 No.5507-1/5 2SA1875 / 2SC4976 Specifications ( ) : 2SA1875 Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO (--)200 V Collector-to-Emitter Voltage VCEO (--)200 V Emitter-to-Base Voltage VEBO (--)3 Collector Current V IC (--)300 ICP IB (--)600 mA Base Current (--)30 mA Collector Dissipation PC Collector Current (Pulse) Junction Temperature Tj Storage Temperature Tstg mA 0.8 W 12 W 150 °C --55 to +150 °C Tc=25°C Electrical Characteristics at Ta=25°C Parameter Symbol Collector Cutoff Current ICBO IEBO Emitter Cutoff Current Gain-Bandwidth Product Output Capacitance fT Cob Reverse Transfer Capacitance Cre min VCB=(--)150V, IE=0 VEB=(--)2V, IC=0 VCE=(--)10V, IC=(--)50mA hFE1 hFE2 DC Current Gain Ratings Conditions Base-to-Emitter Saturation Voltage VBE(sat) V(BR)CBO Collector-to-Emitter Breakdown Voltage V(BR)CEO IC=(--)10µA, IE=0 IC=(--)1mA, RBE=∞ Emitter-to-Base Breakdown Voltage V(BR)EBO IE=(--)100µA, IC=0 µA µA 320* 400 MHz (5.0)4.2 pF (4.2)3.4 IC=(--)50mA, IB=(--)5mA IC=(--)50mA, IB=(--)5mA Collector-to-Base Breakdown Voltage (--)0.1 (--)1.0 20 VCB=(--)30V, f=1MHz VCB=(--)30V, f=1MHz VCE(sat) Unit max 60* VCE=(--)10V, IC=(--)250mA VCE=(--)10V, IC=(--)100mA Collector-to-Emitter Saturation Voltage typ pF (--)1.0 V (--)1.0 V (--)200 V (--)200 V (--)3 V * : The 2SA1875 / 2SC4976 are classified by 50mA hFE as follows 60 to 120 E F 100 to 200 160 to 320 IC -- VBE --350 --150 --100 25°C --25°C --200 --50 2SC4976 VCE=10V 300 Collector Current, IC -- mA --250 Ta=75°C Collector Current, IC -- mA --300 IC -- VBE 350 2SA1875 VCE= --10V 250 200 150 25°C --25°C D hFE Ta=75°C Rank 100 50 0 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 Base-to-Emitter Voltage, VBE -- V --1.2 IT03431 0 0.2 0.4 0.6 0.8 Base-to-Emitter Voltage, VBE -- V 1.0 1.2 IT03432 No.5507-2/5 2SA1875 / 2SC4976 hFE -- IC 5 3 DC Current Gain, hFE DC Current Gain, hFE 2 Ta=75°C 25°C 100 --25°C 7 5 3 2 100 7 5 3 10 3 5 7 2 --10 3 5 7 --100 2 Collector Current, IC -- mA 3 5 3 25°C 7 3 2 75°C Ta= --25 ° C 5 5°C Ta=7 C --25° 25°C 5 3 5 7 2 --10 3 7 2 --100 3 5 IT03434 1.0 7 5 3 5°C 7 Ta= 2 25°C °C --25 0.1 3 5 7 25°C 75°C 3 2 2 10 3 5 7 2 100 Collector Current, IC -- mA --0.1 3 5 IT03436 VBE(sat) -- IC 5 2 5 2 100 VCE(sat) -- IC IT03435 Base-to-Emitter Saturation Voltage, VBE(sat) -- V 3 7 7 2SC4976 IC / IB=10 2 3 2SA1875 IC / IB=10 Ta= --25°C 5 5 5 VBE(sat) -- IC --1.0 3 7 Collector Current, IC -- mA 5 2 10 Collector Current, IC -- mA Collector-to-Emitter Saturation Voltage, VCE(sat) -- V --1.0 7 7 3 2SA1875 IC / IB=10 --0.1 5 IT03433 VCE(sat) -- IC 2 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V Ta=75°C 25°C --25°C 2 10 Base-to-Emitter Saturation Voltage, VBE(sat) -- V 2SC4976 VCE=10V 3 2 2SC4976 IC / IB=10 3 2 1.0 25°C Ta= --25°C 7 75°C 5 3 2 0.1 3 5 7 2 --10 3 5 7 --100 2 Collector Current, IC -- mA 3 5 3 7 7 5 3 2 1.0 3 5 7 2 100 3 5 IT03438 Cob -- VCB 3 2SC4976 f=1MHz 2 Output Capacitance, Cob -- pF 10 2 10 Collector Current, IC -- mA 2SA1875 f=1MHz 2 5 IT03437 Cob -- VCB 3 Output Capacitance, Cob -- pF hFE -- IC 5 2SA1875 VCE= --10V 10 7 5 3 2 1.0 7 --1.0 2 3 5 7 --10 2 3 5 Collector-to-Base Voltage, VCB -- 7 --100 2 V ITR04480 7 1.0 2 3 5 7 10 2 3 5 7 100 2 ITR04481 Collector-to-Base Voltage, VCB -- V No.5507-3/5 2SA1875 / 2SC4976 Cre -- VCB 2 10 7 5 3 2 1.0 2SC4976 f=1MHz 2 10 7 5 3 2 1.0 7 --1.0 2 3 5 7 --10 2 3 5 Collector-to-Base Voltage, VCB -- 7 1.0 7 --100 2 V ITR04482 1000 7 5 3 2 100 7 5 3 2 3 5 7 10 2 3 5 7 100 2 ITR04483 f T -- IC 2 Gain-Brandwidth Product, f T -- MHz 2SA1875 VCE= --10V 2 Collector-to-Base Voltage, VCB -- V f T -- IC 2 Gain-Brandwidth Product, f T -- MHz Cre -- VCB 3 2SA1875 f=1MHz Reverse Transfer Capacitance, Cre -- pF Reverse Transfer Capacitance, Cre -- pF 3 10 2SC4976 VCE=10V 1000 7 5 3 2 100 7 5 3 2 10 7 --1.0 2 3 5 7 --10 2 3 5 7 --100 2 Collector Current, IC -- mA 3 5 7 1.0 5 7 10 2 3 5 7 100 2 3 5 ITR04485 PC -- Ta 1.0 ICP=600mA 7 3 Collector Current, IC -- mA ASO 1000 2 ITR04484 DC op era op 100 ati 25 3 °C 2 on 5 nT a= er tio 7 s 1m s m 10 2 Collector Dissipation, PC -- W IC=300mA 3 DC Collector Current, IC -- mA 5 P C =0 .8W 10 Tc=25°C Single pulse For PNP, minus sign is omitted 7 5 3 3 5 7 2 10 3 0.8 0.6 No he at sin k 0.4 0.2 0 5 7 100 2 Collector-to-Emitter Voltage, VCE -- V 3 ITR08231 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 ITR08232 PC -- Tc 14 Collector Dissipation, PC -- W 12 10 8 6 4 2 0 0 20 40 60 80 100 120 Case Temperature, Tc -- °C 140 160 ITR08233 No.5507-4/5 2SA1875 / 2SC4976 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of May, 2001. Specifications and information herein are subject to change without notice. PS No.5507-5/5