New Product VSB2200S Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses TMBS® • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 DO-204AL (DO-41) • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free according to IEC 61249-2-21 definition PRIMARY CHARACTERISTICS IF(AV) 2.0 A VRRM 200 V IFSM 40 A VF at IF = 2.0 A 0.65 V TJ max. 150 °C TYPICAL APPLICATIONS For use in high frequency rectifier of switching mode power supplies, freewheeling diodes, DC/DC converters or polarity protection application. MECHANICAL DATA Case: DO-204AL (DO-41) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS compliant, and commercial grade Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test Polarity: Color band denotes the cathode end MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Maximum repetitive peak reverse voltage Maximum average forward rectified current (fig. 1) Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load Voltage rate of change (rated VR) Operating junction and storage temperature range (1) SYMBOL VSB2200S UNIT VRRM 200 V IF(AV) 2.0 A IFSM 40 A dV/dt 10 000 V/µs TJ, TSTG - 40 to + 150 °C Note (1) Units mounted on PCB with 2 mm x 2 mm copper pad areas 0.375" (9.5 mm) lead length, free air Document Number: 89142 Revision: 29-Sep-10 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 1 New Product VSB2200S Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT Breakdown voltage IR = 1.0 mA TA = 25 °C VBR 200 (minimum) - Instantaneous forward voltage (1) TA = 25 °C TA = 125 °C VF 0.97 0.65 1.23 0.73 V IF = 2.0 A Reverse current per diode (2) VR = 200 V TA = 25 °C TA = 125 °C IR 0.8 0.6 40 4 µA mA Typical juntion capacitance 4.0 V, 1 MHz CJ 110 - pF Notes (1) (2) Pulse test: 300 µs pulse width, 1 % duty cycle Pulse test: Pulse width ≤ 40 ms THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Typical thermal resistance (1) SYMBOL VSB2200S UNIT RθJA RθJL 88 20 °C/W Note (1) Units mounted on PCB with 2 mm x 2 mm copper pad areas 0.375" (9.5 mm) lead length, free air ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE VSB2200S-M3/54 0.34 54 5500 13" diameter paper tape and reel VSB2200S-M3/73 0.34 73 3000 Ammo pack packaging RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 1.8 D = 0.8 Resistive or Inductive Load 0.375" (9.5 mm) Lead Length 2.0 1.6 1.2 0.8 D = 0.3 D = 0.5 1.6 Average Power Loss (W) Average Forward Rectified Current (A) 2.4 1.4 D = 0.2 1.2 D = 0.1 D = 1.0 1.0 0.8 T 0.6 0.4 0.4 0.2 0 D = tp/T tp 0 0 25 50 75 100 125 150 175 0 0.4 0.8 1.2 1.6 2.0 2.4 Ambient Temperature (°C) Average Forward Current (A) Figure 1. Maximum Forward Current Derating Curve Figure 2. Forward Power Loss Characteristics www.vishay.com 2 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] Document Number: 89142 Revision: 29-Sep-10 New Product VSB2200S Vishay General Semiconductor 1000 TA = 150 °C Junction Capacitance (pF) Instantaneous Forward Current (A) 10 TA = 125 °C 1 TA = 100 °C 0.1 100 TA = 25 °C 10 0.01 0.1 0.3 0.5 0.7 0.9 1.1 1.3 0.1 1.5 1 10 100 Instantaneous Forward Voltage (V) Reverse Voltage (V) Figure 3. Typical Instantaneous Forward Characteristics Figure 5. Typical Junction Capacitance 10 100 Transient Thermal Impedance (°C/W) Instantaneous Reverse Current (mA) TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p TA = 150 °C 1 TA = 125 °C 0.1 TA = 100 °C 0.01 0.001 TA = 25 °C 10 0.0001 20 30 40 50 60 70 80 90 Junction to Ambient 1 0.01 100 0.1 1 10 100 Percent of Rated Peak Reverse Voltage (%) t - Pulse Duration (s) Figure 4. Typical Reverse Characteristics Figure 6. Typical Transient Thermal Impedance PACKAGE OUTLINE DIMENSIONS in inches (millimeters) DO-204AL (DO-41) 1.0 (25.4) MIN. 0.107 (2.7) 0.080 (2.0) DIA. 0.205 (5.2) 0.160 (4.1) 1.0 (25.4) MIN. 0.034 (0.86) 0.028 (0.71) DIA. Document Number: 89142 Revision: 29-Sep-10 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 3 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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