VISHAY VSB2200S

New Product
VSB2200S
Vishay General Semiconductor
High-Voltage Trench MOS Barrier Schottky Rectifier
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power
losses
TMBS®
• High efficiency operation
• Solder dip 275 °C max. 10 s, per JESD 22-B106
DO-204AL (DO-41)
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
• Halogen-free according to IEC 61249-2-21
definition
PRIMARY CHARACTERISTICS
IF(AV)
2.0 A
VRRM
200 V
IFSM
40 A
VF at IF = 2.0 A
0.65 V
TJ max.
150 °C
TYPICAL APPLICATIONS
For use in high frequency rectifier of switching
mode power supplies, freewheeling diodes, DC/DC
converters or polarity protection application.
MECHANICAL DATA
Case: DO-204AL (DO-41)
Molding compound meets UL 94 V-0 flammability
rating
Base P/N-M3 - halogen-free, RoHS compliant, and
commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
Polarity: Color band denotes the cathode end
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (fig. 1)
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load
Voltage rate of change (rated VR)
Operating junction and storage temperature range
(1)
SYMBOL
VSB2200S
UNIT
VRRM
200
V
IF(AV)
2.0
A
IFSM
40
A
dV/dt
10 000
V/µs
TJ, TSTG
- 40 to + 150
°C
Note
(1)
Units mounted on PCB with 2 mm x 2 mm copper pad areas 0.375" (9.5 mm) lead length, free air
Document Number: 89142
Revision: 29-Sep-10
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
www.vishay.com
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New Product
VSB2200S
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
MAX.
UNIT
Breakdown voltage
IR = 1.0 mA
TA = 25 °C
VBR
200 (minimum)
-
Instantaneous forward voltage (1)
TA = 25 °C
TA = 125 °C
VF
0.97
0.65
1.23
0.73
V
IF = 2.0 A
Reverse current per diode (2)
VR = 200 V
TA = 25 °C
TA = 125 °C
IR
0.8
0.6
40
4
µA
mA
Typical juntion capacitance
4.0 V, 1 MHz
CJ
110
-
pF
Notes
(1)
(2)
Pulse test: 300 µs pulse width, 1 % duty cycle
Pulse test: Pulse width ≤ 40 ms
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
Typical thermal resistance (1)
SYMBOL
VSB2200S
UNIT
RθJA
RθJL
88
20
°C/W
Note
(1)
Units mounted on PCB with 2 mm x 2 mm copper pad areas 0.375" (9.5 mm) lead length, free air
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
VSB2200S-M3/54
0.34
54
5500
13" diameter paper tape and reel
VSB2200S-M3/73
0.34
73
3000
Ammo pack packaging
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
1.8
D = 0.8
Resistive or Inductive Load
0.375" (9.5 mm) Lead Length
2.0
1.6
1.2
0.8
D = 0.3 D = 0.5
1.6
Average Power Loss (W)
Average Forward Rectified Current (A)
2.4
1.4
D = 0.2
1.2
D = 0.1
D = 1.0
1.0
0.8
T
0.6
0.4
0.4
0.2
0
D = tp/T
tp
0
0
25
50
75
100
125
150
175
0
0.4
0.8
1.2
1.6
2.0
2.4
Ambient Temperature (°C)
Average Forward Current (A)
Figure 1. Maximum Forward Current Derating Curve
Figure 2. Forward Power Loss Characteristics
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For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
Document Number: 89142
Revision: 29-Sep-10
New Product
VSB2200S
Vishay General Semiconductor
1000
TA = 150 °C
Junction Capacitance (pF)
Instantaneous Forward Current (A)
10
TA = 125 °C
1
TA = 100 °C
0.1
100
TA = 25 °C
10
0.01
0.1
0.3
0.5
0.7
0.9
1.1
1.3
0.1
1.5
1
10
100
Instantaneous Forward Voltage (V)
Reverse Voltage (V)
Figure 3. Typical Instantaneous Forward Characteristics
Figure 5. Typical Junction Capacitance
10
100
Transient Thermal Impedance (°C/W)
Instantaneous Reverse Current (mA)
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
TA = 150 °C
1
TA = 125 °C
0.1
TA = 100 °C
0.01
0.001
TA = 25 °C
10
0.0001
20
30
40
50
60
70
80
90
Junction to Ambient
1
0.01
100
0.1
1
10
100
Percent of Rated Peak Reverse Voltage (%)
t - Pulse Duration (s)
Figure 4. Typical Reverse Characteristics
Figure 6. Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-204AL (DO-41)
1.0 (25.4)
MIN.
0.107 (2.7)
0.080 (2.0)
DIA.
0.205 (5.2)
0.160 (4.1)
1.0 (25.4)
MIN.
0.034 (0.86)
0.028 (0.71)
DIA.
Document Number: 89142
Revision: 29-Sep-10
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
www.vishay.com
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Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
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disclosure relating to any product.
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provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
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Document Number: 91000
Revision: 11-Mar-11
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