SANYO 2SC5310-5

Ordering number:ENN5613
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1973/2SC5310
DC/DC Converter Applications
Package Dimensions
· Adoption of FBET, MBIT processes.
· Large current capacitance.
· Low collector-to-emitter saturation voltage.
· High-speed switching.
· Ultrasmall package facilitates miniaturization in end
products.
unit:mm
2018B
[2SA1973/2SC5310]
0.4
0.5
Features
3
0.16
0.95 0.95 2
1.9
2.9
2.5
1 : Base
2 : Emitter
3 : Collector
SANYO : CP
0.8
1.1
1
0.5
1.5
0 to 0.1
Specifications
( ) : 2SA1973
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Symbol
Conditions
Ratings
Unit
Collector-to-Base Voltage
VCBO
(–)30
V
Collector-to-Emitter Voltage
VCEO
VEBO
(–)25
V
(–)6
V
IC
(–)1
A
Collector Current (Pulse)
ICP
(–)3
Base Current
(–)200
mA
Collector Dissipation
IB
PC
250
mW
Junction Temperature
Tj
150
˚C
Storage Temperature
Tstg
–55 to +150
˚C
Emitter-to-Base Voltage
Collector Current
Mounted on a glass-epoxy board (20×30×1.6mm)
A
Electrical Characteristics at Ta = 25˚C
Parameter
Symbol
Conditions
Ratings
min
typ
max
Unit
Collector Cutoff Current
ICBO
VCB=(–)20V, IE=0
(–)0.1
µA
Emitter Cutoff Current
IEBO
VEB=(–)3V, IC=0
(–)0.1
µA
DC Current Gain
hFE
VCE=(–)2V, IC=(–)100mA
135*
* : The 2SA1973/2SC5310 are classified by 100mA hFE as follows :
Rank
hFE
5
135
to
400*
Continued on next page.
6
270
200
to
400
Marking : 2SA1973 : NS
2SC5310 : NN
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
60100TS (KOTO) TA-1556 No.5613–1/4
2SA1973/2SC5310
Continued on preceding page.
Parameter
Symbol
Gain-Bandwidth Product
fT
Cob
Output Capacitance
typ
Base-to-Emitter Saturation Voltage
VBE(sat)
IC=(–)500mA, IB=(–)25mA
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
V(BR)EBO
MHz
(32)19
IC=(–)500mA, IB=(–)25mA
V(BR)CBO IC=(–)10µA, IE=0
V(BR)CEO IC=(–)1mA, RBE=∞
Unit
max
150
VCB=(–)10V, f=1MHz
VCE(sat)
(–150)
IE=(–)10µA, IC=0
pF
(–300)
mV
100
200
mV
(–)0.85
(–)1.2
ton
See specified Test Circuit
Storage Time
tstg
See specified Test Circuit
tf
See specified Test Circuit
V
(–)30
V
(–)25
V
(–)6
Turn-ON Time
Fall Time
min
VCE=(–)10V, IC=(–)50mA
Collector-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Ratings
Conditions
V
(60)60
ns
(350)
ns
500
ns
(25)25
ns
Switching Time Test Circuit
IB1
PW=20µs
D.C.≤1%
INPUT
IB2
OUTPUT
1kΩ
RL
VR
+
+
50Ω
100µF
470µF
VBE=--5V
VCC=12V
20IB1= --20IB2= IC=500mA
(For PNP, the polarity is reversed.)
IC -- VCE
Collector Current, IC – A
--0.8
--0.6
--6mA
--0.4
--4mA
--0.2
--2mA
--0.4
--0.8
--1.2
4mA
0.4
2mA
IB=0
0
0.4
0.8
--600
Ta=7
5°C
25°C
--25°C
--200
0
1.6
2.0
ITR08235
IC -- VBE
1000
--800
1.2
Collector-to-Emitter Voltage, VCE – V
ITR08234
2SA1973
VCE=--2V
Pulse
Collector Current, IC – mA
0.6
--2.0
IC -- VBE
--400
6mA
0
--1.6
Collector-to-Emitter Voltage, VCE – V
--1000
0.8
2SC5310
VCE=2V
Pulse
800
600
Ta=75
°C
25°C
--25°C
0
2SC5310
Pulse
0.2
IB=0
0
IC -- VCE
1.0
2SA1973
Pulse
Collector Current, IC – mA
Collector Current, IC – A
--1.0
400
200
0
0
--0.2
--0.4
--0.6
--0.8
--1.0
Base-to-Emitter Voltage, VBE – V
--1.2
ITR08236
0
0.2
0.4
0.6
0.8
Base-to-Emitter Voltage, VBE – V
1.0
1.2
ITR08237
No.5613–2/4
2SA1973/2SC5310
hFE -- IC
1000
2SA1973
VCE=--2V
Pulse
7
2SC5310
VCE=2V
Pulse
3
3
Ta=75°C
25°C
2
--25°C
DC Current Gain, hFE
5
DC Current Gain, hFE
hFE -- IC
5
Ta=75°C
25°C
2
--25°C
100
100
7
7
5
5
7 --0.01
2
3
5
7 --0.1
2
3
5
7 --1.0
Collector Current, IC – A
3
5
3
2
100
7
5
3
2
2
3
5
7
2
--100
3
5
Collector Current, IC – mA
2
3
5
7 1.0
2
3
ITR08239
f T -- IC
2SC5310
VCE=10V
Pulse
5
3
2
100
7
5
3
2
2
10
3
5
Output Capacitance, Cob – pF
5
3
2
7
2
100
3
5
Collector Current, IC – mA
7 1000
ITR08241
Cob -- VCB
100
2SA1973
f=1MHz
10
2SC5310
f=1MHz
7
5
3
2
10
7
--1.0
2
3
5
7
2
--10
Collector-to-Base Voltage, VCB -- V
3
5
7
VCE(sat) -- IC
5
2SA1973
IC / IB=20
Pulse
3
2
--100
7
5
5°C
3
7
Ta=
2
5°C
--2
C
25°
--10
7
7 --0.01
2
3
1.0
ITR08242
Collector-to-Emitter
Saturation Voltage, VCE (sat) – mV
Collector-to-Emitter
Saturation Voltage, VCE (sat) – mV
7 0.1
7
7 --1000
ITR08240
7
5
5
1000
Cob -- VCB
100
7
3
10
10
--10
--1000
2
Collector Current, IC – A
Gain-Bandwidth Product, fT – MHz
2SA1973
VCE=--10V
Pulse
7
Output Capacitance, Cob – pF
7 0.01
ITR08238
f T -- IC
1000
Gain-Bandwidth Product, fT – MHz
2
3
2
3
5
7
2
10
Collector-to-Base Voltage, VCB -- V
3
5
ITR08243
VCE(sat) -- IC
2SC5310
IC / IB=20
Pulse
2
100
7
5
°C
75
5 °C
--2
5°C
=
Ta
3
2
2
10
7
5
7 --0.1
2
3
5
Collector Current, IC – A
7 --1.0
2
3
ITR08244
7 0.01
2
3
5
7 0.1
2
3
5
Collector Current, IC – A
7 1.0
2
3
ITR08245
No.5613–3/4
2SA1973/2SC5310
VBE(sat) -- IC
2
--1.0
--25°C
7
Ta=75°C
25°C
5
3
3
5
7 --0.1
2
3
5
Collector Current, IC – A
7 --1.0
2
2
1.0
--25°C
7
Ta=75°C
25°C
5
3
7 0.01
Collector Dissipation, PC – mW
s
s
DC
3
2
ms
0µ
10
1m
1.0
7
5
op
era
tio
0.1
7
5
n
Ta=25°C
Single pulse
Mounted on a glass-epoxy board
(20×30×1.6mm)
For PNP, the minus sign (–) is omitted.
2
3
5
7
1.0
2
3
5
7
3
5
7 0.1
2
3
5
Collector Current, IC – A
7 1.0
2
3
ITR08247
PC -- Ta
280
0
=1
PT
IC
2
ITR08246
2SA1973 / 2SC5310
ICP
3
2
Collector Current, IC – A
2
ASO
7
5
0.01
7
5
2SC5310
IC / IB=20
Pulse
3
7 --0.01
3
2
VBE(sat) -- IC
3
2SA1973
IC / IB=20
Pulse
Base-to-Emitter
Saturation Voltage, VBE (sat) – V
Base-to-Emitter
Saturation Voltage, VBE (sat) – V
3
2SA1785 / 2SC5310
2SC4645
2SA1973
250
240
M
ou
nt
200
ed
on
ag
las
s-e
po
160
xy
bo
ar
120
d
(2
0×
30
80
×1
.
6m
m
)
40
0
10
2
Collector-to-Emitter Voltage, VCE – V
3
5
ITR08248
0
20
40
60
80
100
120
Ambient Temperature, Ta – ˚C
140
160
ITR08249
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be expor ted without obtaining the expor t license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of June, 2000. Specifications and information herein are subject to
change without notice.
PS No.5613–4/4