2SA2153 Ordering number : ENN8123 2SA2153 PNP Epitaxial Planar Silicon Transistor High-Current Switching Applications Applications • Voltage regulators, relay drivers, lamp drivers, electrical equipment. Features • • • Adoption of MBIT process. Low saturation voltage. High current capacity and wide ASO. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Conditions Ratings Unit --50 V Collector-to-Emitter Voltage VCBO VCEO --50 V Emitter-to-Base Voltage VEBO --6 V IC --2 A ICP --4 Collector Current Collector Current (Pulse) Base Current IB Collector Dissipation PC Junction Temperature Tj Storage Temperature Tstg A --400 mA Mounted on a ceramic board (450mm2✕0.8mm) 1.3 W Tc=25°C 3.5 W 150 °C --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings min typ Unit max Collector Cutoff Current ICBO VCB=--40V, IE=0 --1 µA Emitter Cutoff Current IEBO hFE1 VEB=--4V, IC=0 --1 µA VCE=--2V, IC=--100mA hFE2 VCE=--2V, IC=--1.5A fT Cob VCE=--10V, IC=--300mA VCB=--10V, f=1MHz 420 DC Current Gain Gain-Bandwidth Product Output Capacitance 200 560 40 MHz 16 pF Collector-to-Emitter Saturation Voltage VCE(sat) IC=--1A, IB=--50mA --0.2 --0.4 V Base-to-Emitter Saturation Voltage VBE(sat) IC=--1A, IB=--50mA --0.9 --1.2 V Marking : AZ Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 21805EA TS IM TB-00000664 No.8123-1/4 2SA2153 Continued from preceding page. Parameter Symbol Collector-to-Base Breakdown Voltage V(BR)CBO V(BR)CEO IC=--10µA, IE=0 IC=--1mA, RBE=∞ Turn-ON Time V(BR)EBO ton IE=--10µA, IC=0 See specified Test Circuit. Storage Time tstg tf Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Fall Time Ratings Conditions min typ max Unit --50 V --50 V --6 V 35 ns See specified Test Circuit. 200 ns See specified Test Circuit. 24 ns Package Dimensions Switching Time Test Circuit unit : mm 2038B 4.5 1.6 IB1 PW=20µs D.C.≤1% 1.5 IC IB2 OUTPUT INPUT 2.5 1.0 1 2 4.0 VR 50Ω RB RL + 100µF + 470µF 3 0.4 VBE=5V 0.4 0.5 VCC= --25V 10IB1= --10IB2= IC= --700mA 1.5 3.0 0.75 1 : Base 2 : Collector 3 : Emitter SANYO : PCP IC -- VCE --1.6 --1.4 --1.2 --10mA --1.0 --5mA --4mA --3mA --2mA --0.8 --0.6 --1.8 --0.4 --1.6 --1.4 --1.2 --1.0 --0.8 --0.6 5°C 25° C --25° C 0 --5 VCE= --2V Ta= 7 Collector Current, IC -- A mA --40 mA --30 mA --20 mA --60 --1.8 IC -- VBE --2.0 mA Collector Current, IC -- A --2.0 --0.4 --1mA --0.2 --0.2 IB=0 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 Collector-to-Emitter Voltage, VCE -- V --1.8 --2.0 IT08346 0 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 --1.1 Base-to-Emitter Voltage, VBE -- V IT08347 No.8123-2/4 2SA2153 hFE -- IC 7 Ta=75°C 3 25°C 2 --25°C Gain-Bandwidth Product, fT -- MHz DC Current Gain, hFE 5 100 7 5 3 2 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 Collector Current, IC -- A 3 10 7 5 7 --1.0 2 3 5 7 --10 2 3 5 7 --100 Collector-to-Base Voltage, VCB -- V 7 5 7 --0.1 2 3 5 7 --1.0 2 --0.1 7 3 °C 75 5°C --2 2 °C 25 = Ta 5 2 3 5 2 3 5 7 --1.0 2 3 ASO <10µs IC= --2A 50 s DC s op er 3 s 0m --1.0 7 5 0µ 1m 10 s m s 10 0µ Collector Current, IC -- A 5 IT08351 10 75°C 7 --0.1 ICP= --4A 2 7 5 3 Collector Current, IC -- A 2 Ta= --25°C 3 IT08349 5 7 5 --1.0 2 IC / IB=20 3 25°C 3 IT08350 IC / IB=20 5 2 VCE(sat) -- IC --0.01 --0.01 VBE(sat) -- IC 3 100 Collector Current, IC -- A Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 2 3 2 7 3 2 3 --1.0 5 5 --0.1 5 IT08348 f=1MHz Output Capacitance, Cob -- pF VCE= --10V 7 5 --0.01 5 Cob -- VCB 7 Base-to-Emitter Saturation Voltage, VBE(sat) -- V fT -- IC 1000 VCE= --2V ati 2 on --0.1 7 5 3 3 Tc=25°C Single pulse 2 2 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 Collector Current, IC -- A 3 5 --0.01 --0.1 3 5 7 --1.0 2 3 5 7 --10 2 3 Collector-to-Emitter Voltage, VCE -- V PC -- Ta 1.4 2 IT08352 5 7 IT08353 PC -- Tc 4.0 1.3 ou Collector Dissipation, PC -- W Collector Dissipation, PC -- W 3.5 M 1.2 nt 1.0 ed on ac er 0.8 am ic bo ar 0.6 d (4 50 m 0.4 m2 ✕ 0. 8m m ) 0.2 3.0 2.5 2.0 1.5 1.0 0.5 0 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT08354 0 20 40 60 80 100 120 Case Temperature, Tc -- °C 140 160 IT08355 No.8123-3/4 2SA2153 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of February, 2005. Specifications and information herein are subject to change without notice. PS No.8123-4/4