Ordering number : ENN7130 MCH3206 NPN Silicon Epitaxial Planar Transistor MCH3206 DC / DC Converter Applications Applications Package Dimensions Relay drivers, lamp drivers, motor drivers, strobes. unit : mm 2194A Features • • • 0.25 0.15 1.6 • 0.3 3 2 0.25 • [MCH3206] Adoption of MBIT processes. High current capacitance. Low collector-to-emitter saturation voltage. High speed switching. Ultrasmall package facilitates miniaturization in end products (0.85mm). High allowable power dissipation. 2.1 • 1 0.65 0.07 • 2.0 3 1 : Base (Bottom view) 0.85 2 : Emitter 3 : Collector Specifications 1 Absolute Maximum Ratings at Ta=25°C Parameter Symbol 2 SANYO : MCPH3 (Top view) Conditions Ratings Unit Collector-to-Base Voltage VCBO 15 V Collector-to-Emitter Voltage VCEO 15 V Emitter-to-Base Voltage VEBO 5 V IC 3 A Collector Current Collector Current (Pulse) Base Current ICP IB Collector Dissipation PC Junction Temperature Tj Storage Temperature Tstg 5 600 Mounted on a ceramic board(600mm2✕0.8mm) A mA 0.8 W 150 °C --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Symbol ICBO IEBO Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product hFE fT Output Capacitance Cob Conditions VCB=12V, IE=0 VEB=4V, IC=0 VCE=2V, IC=500mA Ratings min typ max 200 VCE=2V, IC=500mA VCB=10V, f=1MHz Marking : CF Unit 0.1 µA 0.1 µA 560 380 MHz 13 pF Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN N3001 TS IM TA-3369 No.7130-1/4 MCH3206 Continued from preceding page. Parameter Symbol VCE(sat)1 VCE(sat)2 Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage VBE(sat) V(BR)CBO Collector-to-Emitter Breakdown Voltage V(BR)CEO Emitter-to-Base Breakdown Voltage V(BR)EBO Turn-ON Time ton tstg tf Storage Time Fall Time Ratings Conditions min typ IC=1.5A, IB=30mA IC=3A, IB=60mA IC=1.5A, IB=30mA IC=10µA, IE=0 IC=1mA, RBE=∞ Unit max 100 150 mV 180 270 mV 0.85 1.2 15 IE=10µA, IC=0 See specified Test Circuit. V V 15 V 5 V 30 ns See specified Test Circuit. 210 ns See specified Test Circuit. 11 ns Switching Time Test Circuit IB1 PW=20µs DC≤1% INPUT OUTPUT IB2 1kΩ VR RL 50Ω + 220µF VBE= --5V + 470µF VCC=5V IC=20IB1= --20IB2=1.5A IC -- VCE A A 25mA 4 20mA 15mA 3 25mA 40m 40m 10mA 2 5mA 1 20mA 4 15mA 3 10mA 2 5mA 1 IB=0 1mA IB=0 1mA 2mA 0 2mA 0 0 0.2 0.4 0.6 0.8 Collector-to-Emitter Voltage, VCE -- V 0 1.0 4 6 8 10 IT03983 hFE -- IC 1000 VCE=2V 5.5 2 Collector-to-Emitter Voltage, VCE -- V IT03982 IC -- VBE 6.0 VCE=2V 7 5.0 DC Current Gain, hFE 4.5 4.0 3.5 3.0 2.5 Ta=75 °C 25°C --25°C Collector Current, IC -- A IC -- VCE 5 Collector Current, IC -- A Collector Current, IC -- A 60 mA 5 2.0 1.5 Ta=75°C 5 25°C --25°C 3 2 1.0 0.5 0 0 0.2 0.4 0.6 0.8 Base-to-Emitter Voltage, VBE -- V 1.0 IT03984 100 0.01 2 3 5 7 0.1 2 3 5 7 1.0 Collector Current, IC -- A 2 3 5 7 10 IT03985 No.7130-2/4 MCH3206 VCE(sat) -- IC IC / IB=50 IC / IB=20 3 2 100 7 5 C 5° 7 = Ta 3 2 25 C 5° °C --2 10 7 5 2 3 5 7 0.1 2 3 5 7 1.0 2 3 100 7 C 5° =7 C a T 5° --2 5 3 25 °C 2 2 3 5 7 0.1 2 3 5 7 1.0 2 3 IT03987 Cob -- VCB 100 IC / IB=50 7 f=1MHz Output Capacitance, Cob -- pF 5 3 2 1.0 Ta= --25°C 7 75°C 5 5 7 10 Collector Current, IC -- A IT03986 VBE(sat) -- IC 10 Base-to-Emitter Saturation Voltage, VBE(sat) -- V 2 7 0.01 5 7 10 Collector Current, IC -- A 25°C 3 7 5 3 2 2 0.1 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 10 1.0 5 7 10 Collector Current, IC -- A 10 7 5 7 3 2 3 5 7 0.1 2 3 5 7 1.0 Collector Current, IC -- A 2 3 5 IT03990 PC -- Ta 1.0 ASO ICP=5A IC=3A 100µs DC 1.0 7 5 10 0m s op era tio n 3 2 0.1 7 5 Ta=25°C Single pulse Mounted on a ceramic board (600mm2✕0.8mm) 0.01 0.1 2 3 5 7 1.0 2 3 5 7 10 Collector-to-Emitter Voltage, VCE -- V 2 3 IT03991 ed nt ou M 0.8 5 IT03989 s Collector Current, IC -- A 3 2 3 2 5 3 s 0µ 7 2 10 50 100 7 s 10m 2 5 1m 5 3 3 Collector-to-Base Voltage, VCB -- V VCE=2V 7 0.01 2 IT03988 f T -- IC 1000 Gain-Bandwidth Product, f T -- MHz 3 10 3 0.01 on 0.6 ic m a er ac a bo 0.4 rd 2✕ m m 00 (6 0.2 ) m m 8 0. Collector Dissipation, PC -- W VCE(sat) -- IC 5 Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV 5 0 0 50 100 150 Ambient Temperature, Ta -- °C 200 IT03992 No.7130-3/4 MCH3206 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of November, 2001. Specifications and information herein are subject to change without notice. PS No.7130-4/4