2SC6021 Ordering number : ENN8343 2SC6021 NPN Epitaxial Planar Silicon Transistor DC / DC Converter Applications Applications • Relay drivers, lamp drivers, motor drivers, flash. Features • • • • • • Adoption of FBET and MBIT processes. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Narrow hFE range. High allowable power dissipation. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 15 V Collector-to-Emitter Voltage VCEO 15 V Emitter-to-Base Voltage VEBO 6 V IC 10 A ICP IB 13 A Base Current 1.2 A Collector Dissipation PC 1 W Junction Temperature Tj Storage Temperature Tstg Collector Current Collector Current (Pulse) Tc=25°C 15 W 150 °C --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Symbol ICBO IEBO hFE fT Conditions VCB=12V, IE=0A VEB=4V, IC=0A VCE=2V, IC=500mA Ratings min typ max 250 VCE=2V, IC=500mA Unit 0.1 µA 0.1 µA 400 280 MHz Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 61005EA MS IM TB-00001436 No.8343-1/4 2SC6021 Continued from preceding page. Parameter Symbol Output Capacitance Ratings Conditions min typ Unit max Cob VCB=10V, f=1MHz 50 Collector-to-Emitter Saturation Voltage VCE(sat) IC=3A, IB=60mA IC=4.5A, IB=90mA 95 145 mV 135 205 mV Base-to-Emitter Saturation Voltage VBE(sat) 0.85 1.2 Collector-to-Base Breakdown Voltage V(BR)CBO Collector-to-Emitter Breakdown Voltage V(BR)CEO Emitter-to-Base Breakdown Voltage V(BR)EBO Turn-ON Time IC=3A, IB=60mA IC=10µA, IE=0A Fall Time ns ns See specified Test Circuit. 25 ns 1.5 0.5 0.5 2.3 1 2 3 0 to 0.2 0.6 0.5 1 : Base 2 : Collector 3 : Emitter 4 : Collector 2.3 2.5 0.8 1.2 3 1.2 5.5 7.0 1.5 4 7.0 5.5 2.3 6.5 5.0 0.5 7.5 0.8 1.6 2 V 30 0.85 1 V 6 Package Dimensions unit : mm 7003-003 0.85 0.7 0.6 15 180 2.3 4 V See specified Test Circuit. Package Dimensions unit : mm 7518-003 6.5 5.0 V 15 IC=1mA, RBE=∞ IE=10µA, IC=0A See specified Test Circuit. ton tstg tf Storage Time pF 1.2 2.3 2.3 1 : Base 2 : Collector 3 : Emitter 4 : Collector SANYO : TP-FA SANYO : TP Switching Time Test Circuit IB1 PW=20µs D.C.≤1% IB2 INPUT OUTPUT RB VR 50Ω RL + + 100µF 470µF VBE= --5V VCC=5V IC=20IB1= --20IB2=3A IC -- VCE 50mA 40mA 20mA 6 5 10mA 4 3 5mA 2 8 7 6 5 4 3 2 --25°C 30mA 5°C 25°C 7 9 Collector Current, IC -- A 8 VCE=2V Ta= 7 A 8 0m 6 10 0m Collector Current, IC -- A 9 IC -- VBE 10 0mA A 10 1 1 IB=0mA 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Collector-to-Emitter Voltage, VCE -- V 0.9 1.0 IT09458 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 Base-to-Emitter Voltage, VBE -- V 1.0 1.1 IT09459 No.8343-2/4 2SC6021 hFE -- IC 1000 Gain-Bandwidth Product, f T -- MHz DC Current Gain, hFE Ta=75°C 25°C 3 --25°C 2 100 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 3 2 100 7 5 3 2 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V Output Capacitance, Cob -- pF 2 100 7 5 3 2 3 5 7 1.0 2 3 5 7 2 10 Collector-to-Base Voltage, VCB -- V 3 5 7 1.0 2 3 5 IT09461 3 2 0.1 7 5 3 75 = Ta 2 0.01 25 7 °C C 5° --2 °C 2 3 5 7 0.1 2 3 5 7 1.0 2 Base-to-Emitter Saturation Voltage, VBE(sat) -- V IC / IB=50 3 2 0.1 7 5 = Ta 3 25 C 5° °C --2 2 0.01 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 µs er at io op era tio 1.0 7 5 n (T c= 25 n( Ta = °C ) 25 °C 3 2 Collector Dissipation, PC -- W 0 50 DC 3 2 op ) 0.1 7 5 Tc=25°C Single pulse 0.01 0.01 2 3 5 7 0.1 75°C 25°C 5 3 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 IT09465 PC -- Ta 100µs 10µs D C Ta= --25°C 7 1.2 100ms 10ms 1ms IC=10A 1.0 Collector Current, IC -- A ASO ICP=13A 2 2 0.01 5 7 10 IT09464 Collector Current, IC -- A 5 7 10 IT09463 VBE(sat) -- IC 3 °C 75 3 Collector Current, IC -- A IT09462 IC / IB=50 5 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 2 VCE(sat) -- IC 3 0.01 3 VCE(sat) -- IC 7 Collector Current, IC -- A 7 0.1 5 2 0.1 3 2 5 IC / IB=20 3 10 7 5 3 5 f=1MHz 3 2 2 Collector Current, IC -- A Cob -- VCB 5 5 10 0.01 5 7 10 IT09460 Collector Current, IC -- A VCE=10V 7 7 5 f T -- IC 1000 VCE=2V 1.0 0.8 No 0.6 he at sin k 0.4 0.2 0 2 3 5 7 1.0 2 3 5 7 10 Collector-to-Emitter Voltage, VCE -- V 3 IT09474 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT09475 No.8343-3/4 2SC6021 PC -- Tc Collector Dissipation, PC -- W 18 16 15 14 12 10 8 6 4 2 0 0 20 40 60 80 100 120 Case Temperature, Tc -- °C 140 160 IT09476 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of June, 2005. Specifications and information herein are subject to change without notice. PS No.8343-4/4