Ordering number:EN3082 FC114 NPN Epitaxial Planar Silicon Composite Transistor Switching Applications Features Package Dimensions · On-chip bias resistors (R1=10kΩ, R2=10kΩ) · Composite type with 2 transistors contained in the CP package currently in use, improving the mounting efficiency greatly. · The FC114 is formed with two chips, being equivalent to the 2SC3398, placed in one package. · Excellent in thermal equilibrium and pair capability. unit:mm 2067 [FC114] Electrical Connection E1:Emitter1 B1:Base1 C2:Collerctor2 E2:Emitter2 B2:Base2 C1:Collerctor1 SANYO:CP6 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Symbol Conditions Ratings Unit 50 V Collector-to-Emitter Voltage VCBO VCEO 50 V Emitter-to-Base Voltage VEBO 10 V IC 100 mA Collector Current Collector Current (Pulse) I CP Collector Dissipation PC Total Dissipation Junction Temperature PT Tj Storage Temperature Tstg 200 mA 200 mW 300 mW 150 ˚C –55 to+150 ˚C 1 unit Electrical Characteristics at Ta = 25˚C Parameter Symbol Conditions Ratings min typ max Unit Collector Cutoff Current ICBO VCB=40V, IE=0 0.1 µA Collector Cutoff Current ICEO 0.5 µA Emitter Cutoff Current IEBO hFE VCE=40V, IB=0 VEB=5V, IC=0 360 µA DC Current Gain Gain-Bandwidth Product Output Capacitance C-E Saturation Voltage C-B Breakdown Voltage C-E Breakdown Voltage fT Co b VI(off) Input ON-State Voltage VI(on) Input Resistance R1 R1/R2 VCE=5V, IC=100µA VCE=0.2V, IC=10mA 250 50 VCE=10V, IC=5mA VCB=10V, f=1MHz VCE(sat) IC=10mA. IB=0.5mA V(BR)CBO IC=10µA, IE=0 V(BR)CEO IC=100µA, RBE=∞ Input OFF-State Voltage Resistance Ratio VCE=5V, IC=10mA 170 250 MHz 3.3 0.1 pF 0.3 50 V V 50 V 0.8 1.1 1.5 1.0 2.0 4.0 V V 7.0 10 13 kΩ 0.9 1.0 1.1 Note: The specifications shown above are for each individual transistor. Marking:114 SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 52098HA (KT)/4139MO, TS No.3082-1/2 FC114 Sample Application Circuit No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. Anyone purchasing any products described or contained herein for an above-mentioned use shall: Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: Not impose any responsibilty for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of May, 1998. Specifications and information herein are subject to change without notice. PS No.3082-2/2