SANYO FC601

Ordering number:EN4658
FC601
TR:PNP Epitaxial Planar Silicon Transistor
SBD:Schottky Barrier Diode
DC-DC Converter Applications
Features
Package Dimensions
· Composed of a Shottky barrier diode and a PNP
transistor with built-in resistors, and contained in one
CP package, resulting in greatly improved circuitboard using efficiency.
· The FC601 is composed of an equivalent chip to the
SB007-03CP and an equivalent chip to the RA104C
(R1=10kΩ, R2=47kΩ).
unit:mm
2105A
[FC601]
1:Collector
2:Cathode
3:Anode
4:Emitter
5:Base
SANYO:CP5
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Symbol
Conditions
Ratings
Unit
[TR]
Collector-to-Base Voltage
VCBO
VCEO
–50
V
Collector-to-Emitter Voltage
–50
V
Emitter-to-Base Voltage
VEBO
–6
Collector Current
V
–100
mA
Collector Dissipation
IC
PC
200
mW
Junction Temperature
Tj
150
˚C
Storage Temperature
Tstg
–55 to +150
˚C
VRRM
VRSM
30
V
35
V
Average Output Current
IO
70
mA
Surge Forward Current
IFSM
2
A
Junction Temperature
Tj
–55 to +125
˚C
Storage Temperature
Tstg
–55 to +125
˚C
[SBD]
Repetitive Peak Reverse Voltage
Non-repetitive Peak Reverse Surge Voltage
50Hz sine wave, 1cycle
Continued on next page.
Marking:601
Electrical Connection
1:Collector
2:Cathode
3:Anode
4:Emitter
5:Base
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52098HA (KT)/41594TH (KOTO) B8-0026 No.4658-1/4
FC601
Continued from preceding page.
Electrical Characteristics at Ta=25˚C
Parameter
Symbol
Conditons
Ratings
min
typ
Unit
max
[TR]
Collector Cutoff Current
ICBO
Collector Cutoff Current
ICEO
Emitter Cutoff Current
IEBO
hFE
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
C-E Saturation Voltage
C-B Breakdown Voltage
C-E Breakdown Voltage
fT
Cob
VCB=–40V, IE=0
VCE=–40V, IB=0
VEB=–5V, IC=0
VCE=–5V, IC=–5mA
VCE=–10V, IC=–5mA
VI(off)
Input ON-State Voltage
VI(on)
Input Resistance
R1
Resistance Ratio
R1/R2
VCE=–5V, IC=–100µA
VCE=–0.2V, IC=–5mA
–88
µA
–0.5
µA
–125
µA
70
200
VCB=–10V, f=1MHz
VCE(sat) IC=–10mA, IB=–0.5mA
V(BR)CBO IC=–10µA, IE=0
V(BR)CEO IC=–100µA, RBE=∞
Input OFF-State Voltage
–67
–0.1
MHz
5.3
–0.1
pF
–0.3
–50
V
V
–50
V
–0.6
–0.8
–1.0
–0.7
–1.0
–2.0
7
10
13
V
V
kΩ
0.213
[SBD]
Reverse Voltage
VR
Forward Voltage
VF
IR
Reverse Current
Interterminal Capacitance
Reverse Recovery Time
Thermal Resistance
C
trr
Rthj-a
IR=20µA
IF=70mA
30
V
VR=15V
VR=10V, f=1MHz
0.55
V
5
µA
3.0
IF=IR=10mA, See specified Test Circuit
pF
10
620
ns
˚C/W
Trr Test Circuit
No.4658-2/4
FC601
No.4658-3/4
FC601
No products described or contained herein are intended for use in surgical implants, life-support systems,
aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and
the like, the failure of which may directly or indirectly cause injury, death or property loss.
Anyone purchasing any products described or contained herein for an above-mentioned use shall:
Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates,
subsidiaries and distributors and all their officers and employees, jointly and severally, against any
and all claims and litigation and all damages, cost and expenses associated with such use:
Not impose any responsibilty for any fault or negligence which may be cited in any such claim or
litigation on SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of
their officers and employees jointly or severally.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees
are made or implied regarding its use or any infringements of intellectual property rights or other rights of
third parties.
This catalog provides information as of May, 1998. Specifications and information herein are subject to
change without notice.
PS No.4658-4/4