Ordering number:EN4658 FC601 TR:PNP Epitaxial Planar Silicon Transistor SBD:Schottky Barrier Diode DC-DC Converter Applications Features Package Dimensions · Composed of a Shottky barrier diode and a PNP transistor with built-in resistors, and contained in one CP package, resulting in greatly improved circuitboard using efficiency. · The FC601 is composed of an equivalent chip to the SB007-03CP and an equivalent chip to the RA104C (R1=10kΩ, R2=47kΩ). unit:mm 2105A [FC601] 1:Collector 2:Cathode 3:Anode 4:Emitter 5:Base SANYO:CP5 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Conditions Ratings Unit [TR] Collector-to-Base Voltage VCBO VCEO –50 V Collector-to-Emitter Voltage –50 V Emitter-to-Base Voltage VEBO –6 Collector Current V –100 mA Collector Dissipation IC PC 200 mW Junction Temperature Tj 150 ˚C Storage Temperature Tstg –55 to +150 ˚C VRRM VRSM 30 V 35 V Average Output Current IO 70 mA Surge Forward Current IFSM 2 A Junction Temperature Tj –55 to +125 ˚C Storage Temperature Tstg –55 to +125 ˚C [SBD] Repetitive Peak Reverse Voltage Non-repetitive Peak Reverse Surge Voltage 50Hz sine wave, 1cycle Continued on next page. Marking:601 Electrical Connection 1:Collector 2:Cathode 3:Anode 4:Emitter 5:Base SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 52098HA (KT)/41594TH (KOTO) B8-0026 No.4658-1/4 FC601 Continued from preceding page. Electrical Characteristics at Ta=25˚C Parameter Symbol Conditons Ratings min typ Unit max [TR] Collector Cutoff Current ICBO Collector Cutoff Current ICEO Emitter Cutoff Current IEBO hFE DC Current Gain Gain-Bandwidth Product Output Capacitance C-E Saturation Voltage C-B Breakdown Voltage C-E Breakdown Voltage fT Cob VCB=–40V, IE=0 VCE=–40V, IB=0 VEB=–5V, IC=0 VCE=–5V, IC=–5mA VCE=–10V, IC=–5mA VI(off) Input ON-State Voltage VI(on) Input Resistance R1 Resistance Ratio R1/R2 VCE=–5V, IC=–100µA VCE=–0.2V, IC=–5mA –88 µA –0.5 µA –125 µA 70 200 VCB=–10V, f=1MHz VCE(sat) IC=–10mA, IB=–0.5mA V(BR)CBO IC=–10µA, IE=0 V(BR)CEO IC=–100µA, RBE=∞ Input OFF-State Voltage –67 –0.1 MHz 5.3 –0.1 pF –0.3 –50 V V –50 V –0.6 –0.8 –1.0 –0.7 –1.0 –2.0 7 10 13 V V kΩ 0.213 [SBD] Reverse Voltage VR Forward Voltage VF IR Reverse Current Interterminal Capacitance Reverse Recovery Time Thermal Resistance C trr Rthj-a IR=20µA IF=70mA 30 V VR=15V VR=10V, f=1MHz 0.55 V 5 µA 3.0 IF=IR=10mA, See specified Test Circuit pF 10 620 ns ˚C/W Trr Test Circuit No.4658-2/4 FC601 No.4658-3/4 FC601 No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. Anyone purchasing any products described or contained herein for an above-mentioned use shall: Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: Not impose any responsibilty for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of May, 1998. Specifications and information herein are subject to change without notice. PS No.4658-4/4