Ordering number:EN5099 FC154 NPN/PNP Epitaxial Planar Silicon Transistor High-Speed Switching, High-Frequency Amp Applications Features Package Dimensions · Composite type with NPN transistor and a PNP transistor contained in the conventional CP package, improving the mounting efficiency greatly. · The FC154 is formed with two chips, being equivalent to the 2SC4270 and the other the 2SA1699, placed in one package. unit:mm 2104A [FC154] Electrical Connection 1:Emitter 1 2:Base 1 3:Base 2 4:Collector 2 5:Emitter 2 6:Collector 1 1:Emitter 1 2:Base 1 3:Base 2 4:Collector 2 5:Emitter 2 6:Collector 1 SANYO:CP6 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Conditions Ratings Unit [TR1 (NPN Tr)] Collector-to-Base Voltage VCBO 25 V Collector-to-Emitter Voltage VCEO VEBO 15 V 3 V Collector Current IC 50 mA Collector Dissipation PC 200 mW VCBO VCEO –20 V –15 V VEBO IC –3 V –50 mA PC 200 mW Total Dissipation PT 300 mW Junction Temperature Tj 150 ˚C Storage Temperature Tstg –55 to +150 ˚C Emitter-to-Base Voltage [TR2 (PNPTr)] Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation [Common Ratings] Marking:154 Continued on next page. SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 52098HA (KT)/71095MO (KOTO) TA-0144 No.5099-1/7 FC154 Continued from Preceding page. Electrical Characteristics at Ta = 25˚C Parameter Symbol Conditons Ratings min typ max Unit [TR1 (NPN Tr)] Collector Cutoff Current ICBO Emitter Cutoff Current IEBO VCB=20V, IE=0 VEB=2V, IC=0 DC Current Gain Gain-Bandwidth Product hFE fT VCE=10V, IC=5mA VCE=10V, IC=10mA Output Capacitance Cob VCB=10V, f=1MHz 0.7 Power Gain PG 12 dB Noise Figure NF VCE=10V, IC=10mA, f=0.9GHz VCE=10V, IC=3mA, f=0.9GHz 3.0 dB 60 1.5 0.1 µA 10 µA 200 3.0 GHz 1.0 pF [TR2 (PNPTr)] Collector Cutoff Current ICBO VCB=–15V, IE=0 –0.1 µA Emitter Cutoff Current IEBO –0.1 µA DC Current Gain Gain-Bandwidth Product hFE fT VEB=–2V, IC=0 VCE=–10V, IC=–5mA Output Capacitance Cob Forward Transfer Gain Noise Figure | S2le | 2 NF VCE=–10V, IC=–5mA VCB=–10V, f=1MHz VCE=–10V, IC=–5mA, f=0.9GHz VCE=–10V, IC=–3mA, f=0.9GHz 20 1.5 100 3.0 1.0 5 GHz 1.5 pF dB 2.0 dB PG, NF Test Circuit No.5099-2/7 FC154 No.5099-3/7 FC154 No.5099-4/7 FC154 No.5099-5/7 FC154 No.5099-6/7 FC154 No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. Anyone purchasing any products described or contained herein for an above-mentioned use shall: Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: Not impose any responsibilty for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of May, 1998. Specifications and information herein are subject to change without notice. PS No.5099-7/7