SANYO FH102

Ordering number : EN5874
NPN Epitaxial Planar Silicon Composite Transistor
FH102
High-Frequency Low-Noise Amp,
Differential Amp Applications
Features
Package Dimensions
• Composite type with 2 transistors contained in the MCP
unit: mm
package currently in use, improving the mounting
2149-MCP6
efficiency greatly.
• The FH102 is formed with two chips, being equivalent to
the 2SC5226, placed in one package.
• Optimal for differential amplification due to excellent
6
thermal equilibrium and pair capability.
5
0.15
0.2
0.425
[FH102]
0.25
4
1.25
2.1
0 ‘0.1
2
3
1 : Collector1
2 : Emitter1
3 : Collector2
4 : Emitter2
5 : Base2
6 : Base1
SANYO : MCP6
0.425
1
0.65
0.9
0.2
2.0
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Dissipation
Symbol
VCBO
VCEO
VEBO
IC
PC
Total Dissipation
PT
Junction Temperature
Storage Temperature
Tj
Tstg
Conditions
Ratings
Mounted on ceramic board
(250mm2×0.8mm), 1unit
Mounted on ceramic board
(250mm2×0.8mm)
20
10
2
70
300
Unit
V
V
V
mA
mW
500
mW
150
–55 to +150
°C
°C
Electrical Characteristics at Ta=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
DC Current Gain Ratio
Base-to-Emitter Voltage
Difference
Gain-Bandwidth Product
Output Capacitance
Reverse Transfer Capacitance
Symbol
Conditions
ICBO
IEBO
hFE
hFE(small/large)
VBE(small-large)
VCB=10V, IE=0
VEB=1V, IC=0
VCE=5V, IC=20mA
VCE=5V, IC=20mA
VCE=5V, IC=20mA
fT
Cob
Cre
VCE=5V, IC=20mA
VCB=10V, f=1MHz
VCB=10V, f=1MHz
Ratings
min
90
0.7
5
typ
max
1.0
10
200
0.95
1.0
7
0.75
0.5
Unit
µA
µA
mV
1.2
GHz
pF
pF
Continued on next page.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
51598TS (KOTO) TA-1130 No.5874-1/5
FH102
Continued from preceding page.
Parameter
Symbol
S2le2(1)
S2le2(2)
NF
Forward Transfer Gain
Noise Figure
Ratings
Conditions
min
9
VCE=5V, IC=20mA, f=1GHz
VCE=5V, IC=3mA, f=1GHz
VCE=5V, IC=7mA, f=1GHz
typ
12
8
1.0
Unit
max
dB
dB
dB
1.8
Note) The specifications shown above are for each individual transistor except the hFE (small/large) and VBE
(small-large) for which pair capability is also shown.
Marking : 102
Electrical Connection
B1
B2
E2
C1
E1
C2
hFE – I C
3
Gain-Bandwidth Product,fT – GHz
DC Current Gain, hFE
2
100
7
5
3
2
10
7
5
3
2
5 7 1.0
3
2
5 7 10
3
VCE=5V
10
7
5
3
2
1.0
7
5
7 1.0
2
5 7 100
fT – IC
2
VCE=5V
2
3
Collector Current,IC – mA
C ob – VCB
f=1MHz
Output Capacitance, Cob – pF
2
1.0
7
5
3
2
0.1
7
5
7 0.1
2
3
5
7 1.0
2
3
5
7 10
Collector-to-Base Voltage, VCB – V
7 10
2
3
5
7 100
2
2
3
Cre – VCB
3
Reverse Transfer Capacitance, Cre – pF
3
5
Collector Current,IC – mA
f=1MHz
2
1.0
7
5
3
2
0.1
7
5
7 0.1
2
3
5
7 1.0
2
3
5
7 10
2
3
Collector-to-Base Voltage, VCB – V
No.5874-2/5
FH102
NF – I C
VCE=5V
f=1GHz
– IC
f=1GHz
12
6
4
0
3
5
7 1.0
2
3
5
7 10
2
3
5
7 100
2
Collector Current,IC – mA
CE
=
V
CE
=2
V
5V
10
8
V
8
2
6
4
2
0
3
5
7 1.0
2
3
5 7 10
2
3
5 7 100
2
Collector Current,IC – mA
P D – Ta
600
Allowable Power Dissipation, PD – mW
2
2
Noise Figure, NF – dB
10
 S21e
14
Forward Transfer Gain, S21e – dB
12
500
400
To
tal
300
di
ss
ip
ati
on
1u
nit
200
100
0
0
Mounted on ceramic board (250mm2×0.8mm)
20
40
60
80
100
120
140
160
Ambient Temperature, Ta – °C
No.5874-3/5
FH102
S Parameters
f=100MHz, 200 to 2000MHz (200MHz step)
f=100MHz, 200 to 2000MHz (200MHz step)
j50
90°
0.1GHz
120°
j100
j25
j150
150°
j200
j250
j10
VCE =5V
IC =7mA
0.1GHz
2.0GHz
2.0GHz
2.0GHz
10
0
25
VCE =2V
IC =3mA
50
100
VCE =5V
IC =20mA
30°
VCE =2V
IC =3mA
0.1GHz
±180°
2.0GHz
4
8
12
16
20 0
VCE =5V
IC =7mA
0.1GHz
–j10
150 250 500
60°
VCE =5V
IC =20mA
0.1GHz –j250
0.1GHz
–j200
–30°
–150°
–j150
–j25
–j100
–60°
–120°
–j50
–90°
f=100MHz, 200 to 2000MHz (200MHz step)
f=100MHz, 200 to 2000MHz (200MHz step)
90°
2.0GHz
120°
j50
60°
VCE =5V
IC =20mA
2.0GHz
150°
j100
j25
2.0GHz
j150
30°
VCE =2V
IC =3mA
j200
j10
j250
VCE =5V
IC =7mA
0.1GHz
±180°
0.04
0.08
0.12
0.16
0.2 0
0
10
25
50
2.0GHz
–30°
2.0GHz
–90°
0.1GHz
–j250
–j200
VCE =2V
IC =3mA
–j25
–j150
–j100
–60°
–120°
150 250 500
VCE =5V
IC =20mA
VCE =5V
IC =7mA
–j10
–150°
100
2.0GHz
–j50
No products described or contained herein are intended for use in surgical implants, life-support systems,
aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and
the like, the failure of which may directly or indirectly cause injury, death or property loss.
Anyone purchasing any products described or contained herein for an above-mentioned use shall:
Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates,
subsidiaries and distributors and all their officers and employees, jointly and severally, against any
and all claims and litigation and all damages, cost and expenses associated with such use:
Not impose any responsibilty for any fault or negligence which may be cited in any such claim or
litigation on SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of
their officers and employees jointly or severally.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees
are made or implied regarding its use or any infringements of intellectual property rights or other rights of
third parties.
This catalog provides information as of May, 1998. Specifications and information herein are subject to
change without notice.
No.5874-4/5
FH102
S Parameters (Common emitter)
VCE=5V, IC=7mA, ZO=50Ω
Freq(MHz)
 S11
∠ S11
 S21
∠ S21
 S12
∠ S12
 S22
∠ S22
100
0.720
– 46.0
17.973
148.5
0.030
68.5
0.880
– 23.6
200
0.612
– 80.9
13.927
127.3
0.047
57.1
0.697
– 37.6
400
0.497
– 121.3
8.656
105.0
0.066
51.3
0.479
– 47.6
600
0.456
– 143.5
6.080
92.8
0.079
52.9
0.382
– 50.5
800
0.440
– 157.6
4.725
84.3
0.094
55.4
0.339
– 51.8
1000
0.436
– 167.5
3.864
77.0
0.110
56.8
0.323
– 53.4
1200
0.434
– 176.1
3.258
70.3
0.126
57.9
0.312
– 55.8
1400
0.433
176.6
2.847
64.5
0.143
58.4
0.304
– 58.3
1600
0.433
170.9
2.329
57.4
0.160
58.9
0.296
– 62.0
1800
0.434
165.0
2.252
54.2
0.178
58.6
0.293
– 65.0
2000
0.439
159.6
2.057
49.2
0.197
58.1
0.294
– 68.1
VCE=5V, IC=20mA, ZO=50Ω
Freq(MHz)
 S11
∠ S11
 S21
∠ S21
 S12
∠ S12
 S22
∠ S22
100
0.481
– 78.8
29.795
132.9
0.022
63.9
0.707
– 38.2
200
0.420
– 119.2
19.008
112.2
0.033
60.8
0.470
– 51.1
400
0.391
– 151.6
10.416
95.4
0.052
64.7
0.296
– 55.3
600
0.386
– 166.4
7.084
86.6
0.071
67.2
0.236
– 56.1
800
0.381
– 175.9
5.407
80.1
0.092
68.4
0.213
– 56.6
1000
0.382
178.2
4.401
74.1
0.114
67.8
0.208
– 57.9
1200
0.385
172.1
3.701
68.5
0.134
66.8
0.204
– 60.7
1400
0.388
166.7
3.217
63.6
0.156
65.6
0.202
– 63.5
1600
0.390
162.1
2.839
58.8
0.176
64.0
0.199
– 67.9
1800
0.391
156.7
2.534
54.3
0.197
62.4
0.197
– 71.2
2000
0.394
152.1
2.319
50.1
0.219
60.6
0.197
– 74.2
VCE=2V, IC=3mA, ZO=50Ω
Freq(MHz)
 S11
∠ S11
 S21
∠ S21
 S12
∠ S12
 S22
∠ S22
100
0.858
– 32.4
9.413
157.2
0.040
72.6
0.945
– 16.5
200
0.782
– 60.7
8.187
138.5
0.070
59.2
0.833
– 29.3
400
0.653
– 101.1
5.855
113.8
0.101
44.5
0.637
– 43.2
600
0.588
– 126.5
4.337
98.4
0.114
39.1
0.515
– 50.0
800
0.557
– 143.7
3.444
87.7
0.122
38.0
0.454
– 53.8
1000
0.543
– 156.3
2.871
78.5
0.130
38.6
0.426
– 57.1
1200
0.536
– 166.8
2.446
70.5
0.137
40.3
0.407
– 60.3
1400
0.533
– 175.5
2.145
63.5
0.146
42.5
0.393
– 63.8
1600
0.527
177.0
1.904
57.1
0.155
45.0
0.382
– 68.0
1800
0.525
170.3
1.714
51.7
0.168
47.3
0.379
– 72.0
2000
0.528
163.8
1.564
45.9
0.183
49.2
0.378
– 75.8
No.5874-5/5