SANYO FP102

Ordering number:EN3961A
FP102
PNP Epitaxial Planar Silicon Transistor/
Composite Schottky Barrier Diode
DC-DC Converter Applications
Features
Package Dimensions
· Composite type with a PNP transistor and a Shottky
barrier diode contained in one package, facilitating
high-density mounting.
· The FP102 is formed with 2chips, one being equivalent to the 2SB1396 and the other the SB07-03C,
placed in one package.
unit:mm
2088A
[FP102]
1:Base
2:Common
3:Emitter
4:Common
5:Anode
6:Common
7:Common
(Common:Collcector,
Cathode)
SANYO:PCP4
(Bottom view)
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Symbol
Conditions
Ratings
Unit
[TR]
Collector-to-Base Voltage
VCBO
VCEO
–15
V
Collector-to-Emitter Voltage
–11
V
Emitter-to-Base Voltage
VEBO
–7
V
IC
–3
A
I CP
–5
Collector Current
Collector Current (Pulse)
–600
A
Base Current
IB
Collector Dissipation
PC
1.3
W
Junction Temperature
Tj
150
˚C
VRRM
VRSM
30
V
35
V
IO
700
mA
Mounted on ceramic board (250mm2×0.8mm)
mA
[SBD]
Repetitive Peak Reverse Voltage
Non-repetitive Peak Reverse Surge Voltage
Average Rectified Current
Surge Forward Current
IFSM
Junction Temperature
Tj
Storage Temperature
Tstg
50Hz sine wave, 1cycle
5
A
–55 to +125
˚C
–55 to +125
˚C
Continued on next page.
Marking:102
Electrical Connection
1:Base
2:Common
3:Emitter
4:Common
5:Anode
6:Common
7:Common
(Common:Collcector, Cathode)
(Top view)
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52098HA (KT)/62094MT (KOTO) AX-8060 No.3961-1/4
FP102
Continued from preceding page.
Electrical Characteristics at Ta=25˚C
Parameter
Symbol
Conditons
Ratings
min
typ
max
Unit
[TR]
Collector Cutoff Current
ICBO
Emitter Cutoff Current
IEBO
hFE1
DC Current Gain
hFE2
Gain-Bandwidth Product
Output Capacitance
C-E Saturation Voltage
B-E Saturation Voltage
VCB=–12V, IE=0
VEB=–6V, IC=0
VCE=–2V, IC=–0.5A
VCE=–2V, IC=–3A
140
–0.1
µA
–0.1
µA
560
70
fT
VCE=–2V, IC=–0.3A
400
Cob
VCB=–10V, f=1MHz
26
MHz
VCE(sat)
VBE(sat)
IC=–1.5A, IB=–30mA
–0.22
–0.4
IC=–1.5A, IB=–30mA
–0.9
–1.2
pF
V
V
C-B Breakdown Voltage
V(BR)CBO IC=–10µA, IE=0
–15
V
C-E Breakdown Voltage
V(BR)CEO IC=–1mA, RBE=∞
V(BR)EBO IE=–10µA, IC=0
–11
V
E-B Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
–7
V
ton
tstg
See specified Test Circuit
25
ns
See specified Test Circuit
200
ns
tf
See specified Test Circuit
10
ns
[SBD]
Reverse Voltage
VR
Forward Voltage
VF
IR
IR=300µA
IF=700mA
VR=15V
C
VR=10V, f=1MHz
Reverse Current
Interterminal Capacitance
Reverse Recovery Time
Thermal Resistance
trr
Rthj-a
30
V
V
80
µA
28
IF=IR=100mA, See specified Test Circuit
Mounted on ceramic board (250mm2×0.8mm)
0.55
pF
10
120
ns
˚C/W
Switching Time Test Circuit
(TR)
(SBD)
No.3961-2/4
FP102
No.3961-3/4
FP102
No products described or contained herein are intended for use in surgical implants, life-support systems,
aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and
the like, the failure of which may directly or indirectly cause injury, death or property loss.
Anyone purchasing any products described or contained herein for an above-mentioned use shall:
Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates,
subsidiaries and distributors and all their officers and employees, jointly and severally, against any
and all claims and litigation and all damages, cost and expenses associated with such use:
Not impose any responsibilty for any fault or negligence which may be cited in any such claim or
litigation on SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of
their officers and employees jointly or severally.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees
are made or implied regarding its use or any infringements of intellectual property rights or other rights of
third parties.
This catalog provides information as of May, 1998. Specifications and information herein are subject to
change without notice.
PS No.3961-4/4