SANYO FX901

Ordering number:EN5387
FX901
PNP Epitaxial Planar Silicon Transistor
N-Channel MOS Silicon FET
Silicon Schottky Barrier Diode
DC-DC Converter Applications
Features
Package Dimensions
· Composite type with a PNP transistor and a 2.5V
drive N-channel MOSFET with a built-in low
forward-voltage Schottky barrier diode faciliteting
high-density mounting.
unit:mm
2133
[FX901]
Electrical Connection
1:Base
2:Emitter
3:Anode, Source
4:Gate
5, 6:Common
(Collector, Cathode, Drain)
SANYO:XP5
(Bottom view)
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Allowable Power Dissipation
Total Power Dissipation
Storage Temperature
Symbol
Conditions
P
Tc=25˚C, 1 unit
P
Mounted on ceramic board (750mm2×0.8mm) 1 unit
PT
Tstg
Ratings
Unit
Mounted on ceramic board (750mm2×0.8mm)
8
W
1.5
W
2
W
–55 to +150
˚C
VCBO
VCEO
–15
V
–11
V
VEBO
IC
–7
V
–3
A
ICP
–5
[TR]
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Junction Temperature
IB
Tj
A
–600
mA
150
˚C
[MOSFET]
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
VDSS
VGSS
ID
Drain Current (Pulse)
IDP
Channel Temperature
PW≤10µs, duty cycle≤1%
11
V
±10
V
2
A
8
A
Tch
150
˚C
IO
500
mA
[SBD]
Average Rectified Current
· Marking:901
Continued on next page.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52098HA (KT)/32996YK (KOTO) TA-0622 No.5387-1/5
FX901
Continued from preceding page.
Electrical Characteristics at Ta = 25˚C
Parameter
Symbol
Conditions
Ratings
min
typ
max
Unit
[TR]
Collector Cutoff Current
ICBO
VCB=–12V, IE=0
–0.1
µA
Emitter Cutoff Current
IEBO
VEB=–6V, IC=0
–0.1
µA
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
C-E Saturation Voltage
hFE(1)
VCE=–2V, IC=–0.5A
hFE(2)
VCE=–2V, IC=–3A
560
70
fT
VCE=–2V, IC=–0.3A
400
Cob
VCB=–10V, f=1MHz
IC=–1.5A, IB=–30mA
26
–0.22
–0.4
V
IC=–1.5A, IB=–30mA
–0.9
–1.2
V
VCE(sat)
VBE(sat)
B-E Saturation Voltage
140
MHz
pF
C-B Breakdown Voltage
V(BR)CBO IC=–10µA, IE=0
–15
V
C-E Breakdown Voltage
V(BR)CEO IC=–1mA, RBE=∞
–11
V
E-B Breakdown Voltage
V(BR)EBO
IE=–10µA, IC=0
–7
V
Turn-ON time
ton
See specified Test Citcuit
25
ns
Storage Time
tstg
tf
See specified Test Circuit
200
ns
See specified Test Circuit
10
ns
Fall Time
[MOSFET]
D-S Breakdown Voltage
V(BR)DSS
ID=1mA, VGS=0
11
V
Zero-Gate Voltage Drain Current
IDSS
Gate-to-Source Leakage Current
IGSS
VGS(off)
| Yfs |
VGS=±8V, VDS=0
RDS(on)
RDS(on)
ID=1A, VGS=4V
ID=500mA, VGS=2.5V
140
200
mΩ
200
320
mΩ
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source ON-Resistance
VDS=10.4V, VGS=0
VDS=10V, ID=1mA
0.5
VDS=10V, ID=1A
1.8
400
µA
±10
µA
1.5
2.8
V
S
Input Capacitance
Ciss
VDS=10V, f=1MHz
185
pF
Output Capacitance
Coss
210
pF
Reverse Transfer Capacitance
Crss
VDS=10V, f=1MHz
VDS=10V, f=1MHz
40
pF
Turn-ON Delay Time
td(on)
See specified Test Circuit
15
ns
tr
See specified Test Circuit
40
ns
td(off)
See specified Test Circuit
50
ns
tf
See specified Test Circuit
35
ns
IF=500mA
0.4
0.45
V
IF=500mA, di/dt=50A/µs
20
30
ns
Rise Time
Turn-OFF Delay TIme
Fall Time
[SBD]
Forward Voltage
Reverse Recovery Time
Swithing Time Test CIrcuit
VF
trr
[TR]
Trr Test Circuit
[MOSFET]
No.5387-2/5
FX901
No.5387-3/5
FX901
No.5387-4/5
FX901
No products described or contained herein are intended for use in surgical implants, life-support systems,
aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and
the like, the failure of which may directly or indirectly cause injury, death or property loss.
Anyone purchasing any products described or contained herein for an above-mentioned use shall:
Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates,
subsidiaries and distributors and all their officers and employees, jointly and severally, against any
and all claims and litigation and all damages, cost and expenses associated with such use:
Not impose any responsibilty for any fault or negligence which may be cited in any such claim or
litigation on SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of
their officers and employees jointly or severally.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees
are made or implied regarding its use or any infringements of intellectual property rights or other rights of
third parties.
This catalog provides information as of May, 1998. Specifications and information herein are subject to
change without notice.
PS No.5387-5/5