Ordering number:EN5387 FX901 PNP Epitaxial Planar Silicon Transistor N-Channel MOS Silicon FET Silicon Schottky Barrier Diode DC-DC Converter Applications Features Package Dimensions · Composite type with a PNP transistor and a 2.5V drive N-channel MOSFET with a built-in low forward-voltage Schottky barrier diode faciliteting high-density mounting. unit:mm 2133 [FX901] Electrical Connection 1:Base 2:Emitter 3:Anode, Source 4:Gate 5, 6:Common (Collector, Cathode, Drain) SANYO:XP5 (Bottom view) Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Allowable Power Dissipation Total Power Dissipation Storage Temperature Symbol Conditions P Tc=25˚C, 1 unit P Mounted on ceramic board (750mm2×0.8mm) 1 unit PT Tstg Ratings Unit Mounted on ceramic board (750mm2×0.8mm) 8 W 1.5 W 2 W –55 to +150 ˚C VCBO VCEO –15 V –11 V VEBO IC –7 V –3 A ICP –5 [TR] Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Junction Temperature IB Tj A –600 mA 150 ˚C [MOSFET] Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) VDSS VGSS ID Drain Current (Pulse) IDP Channel Temperature PW≤10µs, duty cycle≤1% 11 V ±10 V 2 A 8 A Tch 150 ˚C IO 500 mA [SBD] Average Rectified Current · Marking:901 Continued on next page. SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 52098HA (KT)/32996YK (KOTO) TA-0622 No.5387-1/5 FX901 Continued from preceding page. Electrical Characteristics at Ta = 25˚C Parameter Symbol Conditions Ratings min typ max Unit [TR] Collector Cutoff Current ICBO VCB=–12V, IE=0 –0.1 µA Emitter Cutoff Current IEBO VEB=–6V, IC=0 –0.1 µA DC Current Gain Gain-Bandwidth Product Output Capacitance C-E Saturation Voltage hFE(1) VCE=–2V, IC=–0.5A hFE(2) VCE=–2V, IC=–3A 560 70 fT VCE=–2V, IC=–0.3A 400 Cob VCB=–10V, f=1MHz IC=–1.5A, IB=–30mA 26 –0.22 –0.4 V IC=–1.5A, IB=–30mA –0.9 –1.2 V VCE(sat) VBE(sat) B-E Saturation Voltage 140 MHz pF C-B Breakdown Voltage V(BR)CBO IC=–10µA, IE=0 –15 V C-E Breakdown Voltage V(BR)CEO IC=–1mA, RBE=∞ –11 V E-B Breakdown Voltage V(BR)EBO IE=–10µA, IC=0 –7 V Turn-ON time ton See specified Test Citcuit 25 ns Storage Time tstg tf See specified Test Circuit 200 ns See specified Test Circuit 10 ns Fall Time [MOSFET] D-S Breakdown Voltage V(BR)DSS ID=1mA, VGS=0 11 V Zero-Gate Voltage Drain Current IDSS Gate-to-Source Leakage Current IGSS VGS(off) | Yfs | VGS=±8V, VDS=0 RDS(on) RDS(on) ID=1A, VGS=4V ID=500mA, VGS=2.5V 140 200 mΩ 200 320 mΩ Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source ON-Resistance VDS=10.4V, VGS=0 VDS=10V, ID=1mA 0.5 VDS=10V, ID=1A 1.8 400 µA ±10 µA 1.5 2.8 V S Input Capacitance Ciss VDS=10V, f=1MHz 185 pF Output Capacitance Coss 210 pF Reverse Transfer Capacitance Crss VDS=10V, f=1MHz VDS=10V, f=1MHz 40 pF Turn-ON Delay Time td(on) See specified Test Circuit 15 ns tr See specified Test Circuit 40 ns td(off) See specified Test Circuit 50 ns tf See specified Test Circuit 35 ns IF=500mA 0.4 0.45 V IF=500mA, di/dt=50A/µs 20 30 ns Rise Time Turn-OFF Delay TIme Fall Time [SBD] Forward Voltage Reverse Recovery Time Swithing Time Test CIrcuit VF trr [TR] Trr Test Circuit [MOSFET] No.5387-2/5 FX901 No.5387-3/5 FX901 No.5387-4/5 FX901 No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. Anyone purchasing any products described or contained herein for an above-mentioned use shall: Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: Not impose any responsibilty for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of May, 1998. Specifications and information herein are subject to change without notice. PS No.5387-5/5