Ordering number:EN4539 FP301 TR:NPN Epitaxial Planar Silicon Transistor SBD:Schottky Barrier Diode DC-DC Converter Applications Features Package Dimensions · Composite type with 2 devices (NPN transistor and Schottoky barrier diode) contained in one package, facilitating high-density mounting. · The FP301 is formed with a chip being equivalent to the 2SD1621 and a chip being equivalent to the SB07-03C placed in one package. unit:mm 2099A [FP301] 1:Base 2, 7:Collector 3:Emitter Common 4, 6:Collector 5:Base SANYO:PCP5 (Bottom view) Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Conditions Ratings Unit [TR] Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) VCBO VCEO 30 V 25 V VEBO IC 6 V 2 A ICP 5 400 A Base Current IB Collector Dissipation PC 0.8 W Junction Temperature Tj 150 ˚C VRRM VRSM 30 V 35 V IO 700 mA Mounted on ceramic board (250mm2×0.8mm) mA [SBD] Repetitive Peak Reverse Voltage Non-repetitive Peak Reverse Surge Voltage Average Rectified Current Surge Forward Current Junction Temperature IFSM Tj Storage Temperature Tstg Electrical Connection 50Hz sine wave, 1 cycle 5 A –55 to +125 ˚C –55 to +125 ˚C Continued on next page. 1:Base 2, 7:Collector 3:Emitter Common 4, 6:Collector 5:Base (Top view) SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 52098HA (KT)/53094TH (KOTO) BX-0215 No.4539-1/4 FP301 Continued from preceding page. Electrical Characteristics at Ta=25˚C Parameter Symbol Conditons Ratings min typ max Unit [TR] Collector Cutoff Current ICBO Emitter Cutoff Current IEBO DC Current Gain hFE1 Gain-Bandwidth Product hFE2 fT Output Capacitance Cob C-E Saturation Voltage B-E Saturation Voltage VCE(sat) VBE(sat) VCB=20V, IE=0 VEB=4V, IC=0 VCE=2V, IC=100mA VCE=2V, IC=1.5A 140 0.1 µA 0.1 µA 560 65 VCE=10V, IC=50mA 150 MHz VCE=10V, f=1MHz IC=1.5A, IB=75mA 0.18 0.4 V IC=1.5A, IB=75mA 0.85 1.2 V 19 pF C-B Breakdown Voltage V(BR)CBO IC=10µA, IE=0 30 V C-E Breakdown Voltage V(BR)CEO IC=1mA, RBE=∞ V(BR)EBO IE=10µA, IC=0 25 V E-B Breakdown Voltage Turn-ON Time Storage Time Fall Time 6 V ton tstg See specified Test Circuit 60 ns See specified Test Circuit 500 ns tf See specified Test Circuit 25 ns [SBD] Reverse Voltage VR VF IR=300µA IF=700mA VR=15V Interterminal Capacitance IR C Reverse Recovery Time trr Forward Voltage Reverse Current Thermal Resistance Rthj-a VR=10V, f=1MHz cycle IF=IR=100mA, See sepcified Test Circuit. Mounted on ceramic board (250mm2×0.8mm) 30 V 0.55 V 80 µA 28 pF 10 170 ns ˚C/W Marking:301 No.4539-2/4 FP301 No.4539-3/4 FP301 No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. Anyone purchasing any products described or contained herein for an above-mentioned use shall: Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: Not impose any responsibilty for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of May, 1998. Specifications and information herein are subject to change without notice. PS No.4539-4/4