Ordering number:EN4892 FX852 MOSFET:N-Channel Silicon MOSFET SBD:Schottky Barrier Diode DC-DC Converter Applications Features Package Dimensions · Composite type composed of a low ON-resistance Nchannel MOSFET for ultrahigh-speed switching and low-voltage driving and a fast-recovery, low forward -voltage Schottky barrier diode. Facilitates highdensity mounting. · The FX852 is formed with 2 chips, one being equivalent to the 2SK1467 and the other the SB0703P, placed in one package. unit:mm 2119 [FX852] 1:Gate 2:Source 3:No connection 4:Anode 5:Cathode 6:Drain Electrical Connection 1:Gate 2:Source 3:No connection 4:Anode 5:Cathode 6:Drain Specifications SANYO:XP6 (Bottom view) (Top view) Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Conditions Ratings Unit [MOSFET] Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) VDSS VGSS ID 30 V ±15 V 2 A Drain Current (Pulse) IDP PW≤10µs, duty cycle≤1% 8 A Allowable Power Dissipation PD PD Tc=25˚C 6 W 1.5 W Channel Temperature Tch 150 ˚C Storage Temperature Tstg –55 to +150 ˚C V Mounted on ceramic board (750mm2×0.8mm) [SBD] Repetitive Peak Reverse Voltage VRRM 30 Non-repetitive Peak Reverse Surge Voltage VRSM 35 V IO 700 mA Average Rectified Current Surge Forward Current IFSM Junction Temperature Tj Storage Temperature Tstg · Marking:852 50Hz sine wave, 1 cycle 5 A –55 to +125 ˚C –55 to +150 ˚C Continued on next page. SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 52098HA (KT)/71095MO (KOTO) TA-0117 No.4892-1/4 FX852 Continued from preceding page. Electrical Characteristics at Ta = 25˚C Parameter Symbol Conditions Ratings min typ max Unit [MOSFET] D-S Breakdown Voltage V(BR)DSS ID=1mA, VGS=0 Zero-Gate Voltage Drain Current IDSS VDS=30V, VGS=0 Gate-to-Source Leakage Current VGS=±12V, VDS=0 Forward Transfer Admittance IGSS VGS(off) | Yfs | Static Drain-to-Source ON-State Resistance RDS(on) ID=1A, VGS=10V RDS(on) Cutoff Voltage Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Diode Forward Voltage 30 V 100 µA ±10 µA 2.0 V 0.18 0.25 Ω ID=1A, VGS=4V 0.25 0.38 VDS=10V, f=1MHz VDS=10V, f=1MHz 170 pF VDS=10V, ID=1mA 1.0 VDS=10V, ID=1A 1.2 2.0 S Ω 100 pF 30 pF td(on) VDS=10V, f=1MHz See specified Test Circuit 7 ns tr See specified Test Circuit 11 ns td(off) See specified Test Circuit 35 ns tf See specified Test Circuit 25 ns IS=2A, VGS=0 1.0 V VSD [SBD] Reverse Voltage VR VF IR=300µA IF=700mA IR C VR=15V Interterminal Capacitance Reverse Recovery Time trr Forward Voltage Reverse Current Thermal Resistance Switching Time Test CIrcuit Rthj-a 30 VR=10V, f=1MHz Cycle IF=IR=100mA, See specified Test CIrcuit Trr Test Circuit V 80 µA 26 pF 10 Mounted on ceramic board (750mm2×0.8mm) [MOSFET] V 0.55 100 ns ˚C/W [SBD] No.4892-2/4 FX852 No.4892-3/4 FX852 No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. Anyone purchasing any products described or contained herein for an above-mentioned use shall: Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: Not impose any responsibilty for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of May, 1998. Specifications and information herein are subject to change without notice. PS No.4892-4/4