SANYO FP104

Ordering number:EN4655
FP104
TR:PNP Epitaxial Planar Silicon Transistor
SBD:Schottky Barrier Diode
DC-DC Converter Applications
Features
Package Dimensions
· Composite type with 2devices (PNP transistor and
Shottky barrier diode) contained in one package,
facilitating high-density mounting.
· The FP104 is formed with a chips, one being
equivalent to the 2SA1729 and a chip being
eqivalent to the SB05-05CP placed in one package.
unit:mm
2088A
[FP104]
1:Base
2,4,6,7:Common
(Collcector, Cathode)
3:Emitter
5:Anode
SANYO:PCP4
(Bottom view)
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Symbol
Conditions
Ratings
Unit
[TR]
Collector-to-Base Voltage
VCBO
VCEO
–50
V
Collector-to-Emitter Voltage
–40
V
Emitter-to-Base Voltage
VEBO
–5
V
–1.5
A
Collector Current
IC
Collector Current (Pulse)
ICP
Base Current
IB
Collector Dissipation
PC
Junction Temperature
Tj
Storage Temperature
Tstg
–3
–300
Mounted on ceramic board (250mm2×0.8mm)
A
mA
1.3
W
150
˚C
–55 to +150
˚C
VRRM
VRSM
50
V
55
V
IO
500
mA
[SBD]
Repetitive Peak Reverse Voltage
Non-repetitive Peak Reverse Surge Voltage
Average Rectified Current
Surge Forward Current
IFSM
5
A
Junction Temperature
Tj
50Hz sine wave, 1cycle
–55 to +125
˚C
Storage Temperature
Tstg
–55 to +125
˚C
Marking:202
Electrical Connection
Continued on next page.
1:Base
2,4,6,7:Common
(Collcector, Cathode)
3:Emitter
5:Anode
(Top view)
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52098HA (KT)/53094TH (KOTO) A8-9345 No.4655-1/4
FP104
Continued from preceding page.
Electrical Characteristics at Ta=25˚C
.Parameter
Symbol
Conditons
Ratings
min
typ
max
Unit
[TR]
Collector Cutoff Current
ICBO
Emitter Cutoff Current
IEBO
hFE1
DC Current Gain
hFE2
Gain-Bandwidth Product
Output Capacitance
C-E Saturation Voltage
B-E Saturation Voltage
fT
Cob
VCE(sat)
VBE(sat)
VCB=–40V, IE=0
VEB=–3V, IC=0
VCE=–2V, IC=–100mA
VCE=–2V, IC=–1.5A
100
–1.0
µA
–1.0
µA
280
25
VCE=–2V, IC=–100mA
300
VCE=–10V, f=1MHz
MHz
18
pF
IC=–800mA, IB=–40mA
–0.3
–0.8
IC=–800mA, IB=–40mA
–0.9
–1.3
V
V
C-B Breakdown Voltage
V(BR)CBO IC=–10µA, IE=0
–50
V
C-E Breakdown Voltage
V(BR)CEO IC=–1mA, RBE=∞
V(BR)EBO IC=–10µA, IC=0
–40
V
E-B Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
–5
V
ton
tstg
See specified Test Circuit
50
ns
See specified Test Circuit
120
ns
tf
See specified Test Circuit
150
ns
[SBD]
Reverse Voltage
VR
Forward Voltage
VF
IR
Reverse Current
Interterminal Capacitance
Reverse Recovery Time
Thermal Resistance
C
trr
Rthj-a
IR=200µA
IF=500mA
50
V
VR=25V
VR=10V, f=1MHz
V
50
µA
22
IF=IR=100mA, See specified Test Circuit
Mounted on ceramic board (250mm2×0.8mm)
0.55
pF
10
120
ns
˚C/W
Switching Time Test Circuit
(TR)
(SBD)
No.4655-2/4
FP104
No.4655-3/4
FP104
No products described or contained herein are intended for use in surgical implants, life-support systems,
aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and
the like, the failure of which may directly or indirectly cause injury, death or property loss.
Anyone purchasing any products described or contained herein for an above-mentioned use shall:
Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates,
subsidiaries and distributors and all their officers and employees, jointly and severally, against any
and all claims and litigation and all damages, cost and expenses associated with such use:
Not impose any responsibilty for any fault or negligence which may be cited in any such claim or
litigation on SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of
their officers and employees jointly or severally.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees
are made or implied regarding its use or any infringements of intellectual property rights or other rights of
third parties.
This catalog provides information as of May, 1998. Specifications and information herein are subject to
change without notice.
PS No.4655-4/4