KSC2500 KSC2500 Medium Power Amplifier & Low Saturation TO-92L 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Ratings 30 Units V VCES VCEO Collector-Emitter Voltage 30 V Collector-Emitter Voltage 10 V VEBO Emitter-Base Voltage 6 V IC Collector Current (DC) 2 A ICP * Collector Current (Pulse) 5 A IB Base Current 0.5 A PC Collector Power Dissipation 900 mW TJ Junction Temperature 150 °C TSTG Storage Temperature -55 ~ 150 °C * PW≤10ms, Duty Cycle≤30% Electrical Characteristics Ta=25°C unless otherwise noted Symbol ICBO Parameter Collector Cut-off Current Test Condition VCB=30V, IE=0 Min. Typ. Max. 100 Units nA 100 nA IEBO Emitter Cut-off Current VEB=6V, IC=0 BVCBO Collector-Emitter Breakdown Voltage IC=10mA, IB=0 10 BVEBO Emitter-Base Breakdown Voltage IE=1mA, IC=0 6 hFE 1 hFE 2 DC Current Gain VCE=1V, IC=0.5A VCE=1V, IC=2A VCE (sat) Collector-Emitter Saturation Voltage IC=2A, IB=50mA 0.2 0.5 V VBE (on) Base-Emitter On Voltage VCE=1V, IC=2A 0.86 1.5 V fT Current Gain Bandwidth Product VCE=1V, IC=0.5A 150 MHz Cob Output Capacitance VCB=10V, IE=0, f=1MHz 27 pF 140 70 V V 600 200 hFE1 Classification Classification A B C D hFE1 140 ~ 240 200 ~ 330 300 ~ 450 420 ~ 600 ©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002 KSC2500 Typical Characteristics 5 10000 IB = 50mA EMITTER COMMON Ta=25 C IB = 30mA 4 hFE, DC CURRENT GAIN IC[A], COLLECTOR CURRENT EMITTER COMMON VCE=1V o IB = 40mA IB = 20mA 3 2 IB = 10mA IB = 5mA 1 1000 100 IB = 0mA 10 0.01 0 0 1 2 3 4 5 0.1 VCE[V], COLLECTOR-EMITTER VOLTAGE 10 IC[A], COLLECTOR CURRENT Figure 1. Static Characteristic Figure 2. DC current Gain 5 1 EMITTER COMMON IC/I B=40 EMITTER COMMON VCE=1V IC[A], COLLECTOR CURRENT VCE(sat)[V], SATURATION VOLTAGE 1 0.1 3 2 1 0 0.0 0.01 0.1 4 1 0.2 0.4 0.6 0.8 1.0 VBE[V], BASE-EMITTER VOLTAGE IC[A], COLLECTOR CURRENT Figure 3. Collector-Emitter Saturation Voltage Figure 4. Base-Emitter On Voltage 10 IC[A], COLLECTOR CURRENT DC 1 (T a =2 5 0m s s m 10 IC MAX. (Continuous) 10 IC MAX. (Pulse) o C) 0.1 0.01 0.1 1 10 100 VCE [V], COLLECTOR-EMITTER VOLTAGE Figure 5. Safe Operating Area ©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002 KSC2500 Package Dimensions TO-92L 0.70MAX. 1.00 ±0.10 1.70 ±0.20 13.50 ±0.40 8.00 ±0.20 4.90 ±0.20 0.80 ±0.10 1.00MAX. 0.50 ±0.10 1.27TYP [1.27 ±0.20] 0.45 ±0.10 3.90 ±0.20 0.45 ±0.10 3.90 ±0.20 1.45 ±0.20 2.54 TYP Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation Rev. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2002 Fairchild Semiconductor Corporation Rev. I1