KSA1201 KSA1201 Power Amplifier • • • • Collector-Emitter Voltage: VCEO= -120V fT=120MHz Collector Power Dissipation PC=1~2W : Mounted on Ceramic Board Complement to KSC2881 SOT-89 1 1. Base 2. Collector 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector Base Voltage Parameter VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Ratings -120 Units V -120 V -5 V Collector Current -800 mA IB Base Current -160 mA PC PC* Collector Power Dissipation 500 1,000 mW mW TJ Junction Temperature 150 °C TSTG Storage Temperature -55 ~ 150 °C * Mounted on Ceramic Board (250mm2 x 0.8mm) Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCEO Parameter Collector-Emitter Breakdown Voltage Test Condition IC= -10mA, IB=0 BVEBO Emitter-Base Breakdown Voltage IE= -1mA, IC=0 ICBO Collector Cut-off Current VCB= -120V, IE=0 IEBO Emitter Cut-off Current VBE= -5V, IC=0 hFE DC Current Gain VCE= -5V, IC= -100mA Min. -120 Typ. Max. Units V -100 nA -100 nA -5 V 80 240 VCE (sat) Collector-Emitter Saturation Voltage IC= -500mA, IB=-50mA -1.0 V VBE (on) Base-Emitter On Voltage VCE= -5V, IC= -500mA -1.0 V fT Current Gain Bandwidth Product VCE= -5V, IC= -100mA Cob Output Capacitance VCB= -10V, IE=0, f=1MHz 120 MHz 30 pF hFE Classification Classification O Y hFE 80 ~ 160 120 ~ 240 Marking SDX hFE grade ©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002 KSA1201 Typical Characteristics 1000 IB =-10mA VCE = -5V IB =-7mA -0.6 IB =-5mA hFE, DC CURRENT GAIN IC[A], COLLECTOR CURRENT -0.8 IB =-4mA -0.4 IB =-3mA IB =-2mA -0.2 IB =-1mA IB =0 -0 -4 -8 100 10 -12 -1 -16 -10 Figure 1. Static Characteristic Figure 2. DC current Gain -1.0 -1 VCE = -5V IC = 10 IB IC[A], COLLECTOR CURRENT VCE(sat)[V], SATURATION VOLTAGE -1000 IC[mA], COLLECTOR CURRENT VCE[V], COLLECTOR-EMITTER VOLTAGE -0.1 -0.8 -0.6 -0.4 -0.2 -0.01 -1 -10 -100 0 -1000 -0.2 Figure 3. Collector-Emitter Saturation Voltage -10000 ICMAX(DC) s 1m s 0m 10 s m 10 -100 VCEOMAX -1 -10 -100 VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 5. Safe Operating Area ©2002 Fairchild Semiconductor Corporation -1.0 1.4 PC[W], POWER DISSIPATION ICMAX(Pulse) -1 -0.1 -0.8 1.6 o -10 -0.6 Figure 4. Base-Emitter On Voltage Ta=25 C Single Pulse -1000 -0.4 VBE[V], BASE-EMITTER VOLTAGE IC[mA], COLLECTOR CURRENT IC[mA], COLLECTOR CURRENT -100 -1000 1.2 M ou 1.0 nt ed 0.8 on 0.6 Ce ra m ic 0.4 Bo a rd (2 5 0.2 0 25 50 75 100 0m m 2 X0 . 8m m 125 ) 150 175 200 o Ta[ C], AMBIENT TEMPERATURE Figure 6. Power Derating Rev. A2, September 2002 KSA1201 Package Dimensions SOT-89 1.50 ±0.20 4.50 ±0.20 (0.40) 4.10 (1.10) 2.50 ±0.20 C0.2 ±0.20 (0.50) 1.65 ±0.10 0.50 ±0.10 0.40 ±0.10 0.40 +0.10 –0.05 1.50 TYP 1.50 TYP Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation Rev. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2002 Fairchild Semiconductor Corporation Rev. I1