SCH1311 Ordering number : ENN8102 P-Channel Silicon MOSFET SCH1311 General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --30 Gate-to-Source Voltage VGSS ±20 V ID --1.5 A Drain Current (DC) Drain Current (Pulse) IDP PD Allowable Power Dissipation PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2✕0.8mm) V --6.0 A 0.8 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance V(BR)DSS IDSS IGSS Unit max --30 V --1 µA ±10 µA RDS(on)1 RDS(on)2 ID=--0.8A, VGS=--10V ID=--0.4A, VGS=--4V 225 290 mΩ 375 525 mΩ VDS=--10V, f=1MHz VDS=--10V, f=1MHz 185 pF 30 pF VDS=--10V, f=1MHz See specified Test Circuit. 20 pF 7 ns See specified Test Circuit. 4 ns See specified Test Circuit. 22 ns See specified Test Circuit. 8 ns Output Capacitance Coss Reverse Transfer Capacitance Crss Turn-ON Delay Time td(on) tr Fall Time typ VGS=±16V, VDS=0 VDS=--10V, ID=--1mA VDS=--10V, ID=--0.8A Ciss Turn-OFF Delay Time ID=--1mA, VGS=0 VDS=--30V, VGS=0 Ratings min VGS(off) yfs Input Capacitance Rise Time Conditions td(off) tf --1.2 0.9 Marking : JL --2.6 1.5 V S Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN N1504PE TS IM TB-00000517 No.8102-1/4 SCH1311 Continued from preceding page. Parameter Symbol Ratings Conditions min typ Unit max Total Gate Charge Qg VDS=--10V, VGS=--10V, ID=--1.5A 4.7 nC Gate-to-Source Charge Qgs VDS=--10V, VGS=--10V, ID=--1.5A 0.8 nC Gate-to-Drain “Miller” Charge Qgd VDS=--10V, VGS=--10V, ID=--1.5A 0.7 Diode Forward Voltage VSD IS=--1.5A, VGS=0 Package Dimensions nC --0.89 --1.5 V Switching Time Test Circuit unit : mm 2221A VDD= --15V VIN 0V --10V 1.6 0.2 ID= --0.8A RL=18.7Ω VIN D 1.5 2 1 VOUT PW=10µs D.C.≤1% 3 0.5 G 0.56 0.05 1.6 0.05 0.2 6 5 4 0.25 1 : Drain 2 : Drain 3 : Gate 4 : Source 5 : Drain 6 : Drain SCH1311 P.G 50Ω S SANYO : SCH6 ID -- VDS V --1.8 VGS= --3V --1.0 --0.8 --0.6 --1.2 --1.0 --0.8 --0.6 --0.4 --0.4 --0.2 --0.2 0 0 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 Drain-to-Source Voltage, VDS -- V --0.9 0 --1.0 600 ID= --0.4A --0.8A 400 300 200 100 0 0 --1 --2 --3 --4 --5 --6 --7 --8 Gate-to-Source Voltage, VGS -- V --9 --10 IT02744 --1.5 --2.0 --2.5 --3.0 --3.5 --4.0 IT02743 RDS(on) -- Ta 600 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 700 --1.0 Gate-to-Source Voltage, VGS -- V Ta=25°C 500 --0.5 IT02742 RDS(on) -- VGS 800 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ --1.4 °C 25°C --1.2 5°C Drain Current, ID -- A V --1.4 Ta= 7 --4 --1.6 --10 Drain Current, ID -- A --1.6 VDS= --10V --25 --8V --1.8 ID -- VGS --2.0 --6 --5 V V --2.0 500 V --4 S= A, VG --0.4 I D= 400 V = --10 A, V GS 300 0.8 I D= -200 100 0 --60 --40 --20 0 20 40 60 80 100 Ambient Temperature, Ta -- °C 120 140 160 IT08152 No.8102-2/4 SCH1311 yfs -- ID 2 C 25° C 5° = Ta 7 --2 75 5 °C 3 2 2 3 5 7 --0.1 2 3 5 7 --1.0 2 --1.0 7 5 3 2 --0.1 7 5 3 3 5 0 7 tr 3 --1.4 IT02747 f=1MHz Ciss 2 100 7 5 2 1.0 3 Coss 2 Crss 10 3 5 7 2 --0.1 3 5 7 2 --1.0 Drain Current, ID -- A 0 3 --5 --10 --15 --20 --25 --10 7 5 VDS= --10V ID= --1.5A <10µs 10 2 --0.1 7 5 3.0 3.5 4.0 4.5 Total Gate Charge, Qg -- nC 5.0 IT02750 Operation in this area is limited by RDS(on). ) °C 2.5 25 a= (T 2.0 n 1.5 s io 1.0 0m at 0.5 s 10 er 3 2 1m s --1.0 7 5 3 0 m op --2 ID= --1.5A C --4 0µ s 10 D Drain Current, ID -- A 2 IT02749 ASO IDP= --6A 3 --8 --6 --30 Drain-to-Source Voltage, VDS -- V IT02748 VGS -- Qg --10 0 --1.2 3 Ciss, Coss, Crss -- pF tf 5 --1.0 5 2 td(on) --0.8 7 td(off) 7 --0.6 Ciss, Coss, Crss -- VDS 1000 5 10 --0.4 Diode Forward Voltage, VSD -- V VDD= --15V VGS= --10V 3 --0.2 IT02746 SW Time -- ID 100 Switching Time, SW Time -- ns 2 --0.01 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V 3 2 0.1 --0.01 Ta=25°C Single pulse Mounted on a ceramic board (900mm2✕0.8mm) --0.01 --0.01 2 3 5 7 --0.1 2 3 5 7--1.0 2 3 5 7 --10 Drain-to-Source Voltage, VDS -- V 2 3 5 IT08153 PD -- Ta 1.0 Allowable Power Dissipation, PD -- W VGS=0 Ta=75 °C 25°C --25°C 3 1.0 IF -- VSD --10 7 5 VDS= --10V Forward Drain Current, IF -- A Forward Transfer Admittance, yfs -- S 5 0.8 M ou nte do na 0.6 ce ram ic bo ard 0.4 (9 00 mm 2 ✕0 .8m 0.2 m) 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT08147 No.8102-3/4 SCH1311 Note on usage : Since the SCH1311 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. 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Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of November, 2004. Specifications and information herein are subject to change without notice. PS No.8102-4/4