Ordering number : ENN7182 CPH6319 P-Channel Silicon MOSFET CPH6319 High-Speed Switching Applications Preliminary Features • • Package Dimensions Low ON-resistance. High-speed switching. 1.8V drive. unit : mm 2151A [CPH6319] 0.15 2.9 5 4 0.6 6 0.2 • 2.8 0.6 1.6 0.05 3 0.95 1 : Drain 2 : Drain 3 : Gate 4 : Source 5 : Drain 6 : Drain 0.2 2 0.7 0.9 1 0.4 Specifications Absolute Maximum Ratings at Ta=25°C Parameter SANYO : CPH6 Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --12 V Gate-to-Source Voltage VGSS ±8 V --5 A Drain Current (DC) ID IDP Drain Current (Pulse) PW≤10µs, duty cycle≤1% --20 A Mounted on a ceramic board (900mm2✕0.8mm) 1.5 W Allowable Power Dissipation PD 2.0 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Mounted on a FR4 board PW≤5s Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage V(BR)DSS Conditions ID=--1mA, VGS=0 VDS=--12V, VGS=0 Ratings min typ max --12 Unit V --10 µA ±10 µA --1.0 V Zero-Gate Voltage Drain Current IDSS Gate-to-Source Leakage Current VGS=±6.4V, VDS=0 VDS=--6V, ID=--1mA Forward Transfer Admittance IGSS VGS(off) yfs ID=--3A, VGS=--4.5V ID=--1.5A, VGS=--2.5V 36 Static Drain-to-Source On-State Resistance RDS(on)1 RDS(on)2 52 73 mΩ RDS(on)3 ID=--0.3A, VGS=--1.8V 72 105 mΩ Cutoff Voltage VDS=--6V, ID=--3A --0.3 5.8 Marking : JV 8.5 S 47 mΩ Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 41002 TS IM TA-3484 No.7182-1/4 CPH6319 Continued from preceding page. Parameter Symbol Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS=--6V, f=1MHz VDS=--6V, f=1MHz VDS=--6V, f=1MHz Turn-ON Delay Time td(on) Rise Time tr td(off) Turn-OFF Delay Time Fall Time tf Qg Total Gate Charge Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD Ratings Conditions min typ Unit max 940 pF 230 pF 180 pF See specified Test Circuit. 12 ns See specified Test Circuit. 143 ns See specified Test Circuit. 71 ns See specified Test Circuit. 89 ns VDS=--6V, VGS=--4.5V, ID=--5A VDS=--6V, VGS=--4.5V, ID=--5A 11 nC 1.6 nC VDS=--6V, VGS=--4.5V, ID=--5A IS=--5A, VGS=0 2.8 nC --0.85 --1.5 V Switching Time Test Circuit VDD= --6V VIN 0V --4.5V ID= --3A RL=2.0Ω VIN VOUT D PW=10µs D.C.≤1% G P.G 50Ω CPH6319 S ID -- VDS --2.5 --2.0 --1.5 --6 --5 --4 --3 --2 VGS= --1.0V --1.0 --1 --0.5 0 0 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 Drain-to-Source Voltage, VDS -- V 0 --1.0 --0.2 140 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 --1.8 IT03866 RDS(on) -- Ta 120 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Ta=25°C --0.4 Gate-to-Source Voltage, VGS -- V IT03865 RDS(on) -- VGS 160 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ --0.9 C --3.0 25° --3.5 --7 Ta= 75° --2 C 5°C Drain Current, ID -- A --4.0 VDS= --6V --8 Drain Current, ID -- A --4.5 ID -- VGS --9 --1 --1.8V .5V --2.5 V ---4.5V 3.5V -3.0V --5.0 100 --1.5A 120 100 --3.0A 80 ID= --0.3A 60 40 20 0 0 --1 --2 --3 --4 --5 --6 Gate-to-Source Voltage, VGS -- V --7 --8 IT03867 V = --1.8 , V GS A .3 0 I D= -= --2.5V .5A, V GS 1 -= ID 4.5V , VGS= -I D= --3.0A 80 60 40 20 0 --60 --40 --20 0 20 40 60 80 100 Ambient Temperature, Ta -- °C 120 140 160 IT03868 No.7182-2/4 CPH6319 5 5°C --2 Ta= 3 2 25° C °C 75 1.0 7 5 3 --1.0 7 5 3 2 --0.1 7 5 3 2 2 0.1 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 --0.01 --0.2 5 7 --10 IT03869 Drain Current, ID -- A --0.6 --0.8 --1.0 --1.2 IT03870 Ciss, Coss, Crss -- VDS 2 VDD= --6V VGS= --4.5V 7 --0.4 Diode Forward Voltage, VSD -- V SW Time -- ID 1000 f=1MHz 5 Ciss 1000 3 Ciss, Coss, Crss -- pF Switching Time, SW Time -- ns 3 2 25° C 7 VGS=0 Ta= 75° C 10 Forward Current, IF -- A Forward Transfer Admittance, yfs -- S VDS= --6V 2 IF -- VSD --10 7 5 --25° C yfs -- ID 3 2 td(off) 100 7 tf 5 tr 3 7 5 3 Coss Crss 2 2 td(on) 10 --0.1 100 2 3 5 7 2 --1.0 3 5 Drain Current, ID -- A Drain Current, ID -- A --3.0 --2.5 --2.0 --1.5 --10 7 5 3 2 8 10 Total Gate Charge, Qg -- nC 12 IT03873 PD -- Ta 2.5 --12 IT03872 <10µs 1m s 10 ID= --5A DC ms 10 0m s op era tio 3 2 --0.5 6 --10 IDP= --20A --1.0 7 5 --0.1 7 5 0 --8 ASO 3 2 --1.0 4 --6 5 3 2 2 --4 Drain-to-Source Voltage, VDS -- V --3.5 0 --2 IT03871 VDS= --6V ID= --5A --4.0 Allowable Power Dissipation, PD -- W 0 --10 VGS -- Qg --4.5 Gate-to-Source Voltage, VGS -- V 7 n Operation in this area is limited by RDS(on). Ta=25°C Single pulse Mounted on a ceramic board(900mm2✕0.8mm) --0.01 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 IT04300 Drain-to-Source Voltage, VDS -- V 2.0 M ou nt 1.5 Mo ed on aF un ted 1.0 on R4 ac bo ar era mi dP W cb oa 0.5 ≤5 s rd( 90 0m m2 ✕0 .8m 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C m) 140 160 IT04301 No.7182-3/4 CPH6319 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of April, 2002. Specifications and information herein are subject to change without notice. PS No.7182-4/4