2SK3489 Ordering number : EN7316A N-Channel Silicon MOSFET 2SK3489 General-Purpose Switching Device Applications Features • • Low ON-resistance. 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 30 Gate-to-Source Voltage VGSS ±20 V 8 A Drain Current (DC) ID Drain Current (Pulse) IDP V PW≤10µs, duty cycle≤1% 32 A Mounted on a ceramic board (250mm2×0.8mm) 1.5 W Allowable Power Dissipation PD 3.5 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Tc=25˚C Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage Ratings min typ ID=1mA, VGS=0V VDS=30V, VGS=0V VGS= ±16V, VDS=0V 30 VGS(off) yfs VDS=10V, ID=1mA VDS=10V, ID=4A 1.2 RDS(on)1 RDS(on)2 ID=4A, VGS=10V ID=2A, VGS=4V Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz Turn-ON Delay Time td(on) tr td(off) tf Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Rise Time Turn-OFF Delay Time Fall Time V(BR)DSS Conditions IDSS IGSS Unit max V 1 ±10 3.5 2.6 5.1 µA µA V S 37 48 mΩ 63 88 mΩ 460 pF 95 pF 75 pF See specified Test Circuit. 10 ns See specified Test Circuit. 12.5 ns See specified Test Circuit. 31 ns See specified Test Circuit. 19 ns Marking : LF Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN O3105PA MS IM TB-00001867 / 83002 TS IM TA-100189 No.7316-1/4 2SK3489 Continued from preceding page. Parameter Symbol Ratings Conditions min typ Unit max Total Gate Charge Qg VDS=10V, VGS=10V, ID=8A 8.5 nC Gate-to-Source Charge Qgs VDS=10V, VGS=10V, ID=8A 1.8 nC Gate-to-Drain “Miller” Charge Qgd VDS=10V, VGS=10V, ID=8A 1.3 Diode Forward Voltage VSD IS=8A, VGS=0V Package Dimensions unit : mm 7007-003 nC 0.89 1.2 V Switching Time Test Circuit VDD=15V VIN 10V 0V Top View 4.5 ID=4A RL=3.75Ω VIN 1.5 1.6 D VOUT 1 2 4.0 1.0 2.5 PW=10µs D.C.≤1% G 3 2SK3489 0.4 P.G 0.4 50Ω S 0.5 1.5 3.0 1 : Gate 2 : Drain 3 : Source Bottom View V .0V 2 4 3 2 VGS=2.0V 1 5 °C 3 6 25 1 0 0 0 0.2 0.4 0.6 0.8 Drain-to-Source Voltage, VDS -- V 1.0 IT05157 °C -25°C 2.5V 7 Ta= 75 4 8 Drain Current, ID -- A 10.0 V 5 VDS=10V 9 3.5 6.0V 6 ID -- VGS 10 3 8.0 V 7 4.0 V ID -- VDS 8 5 Drain Current, ID -- A SANYO : PCP 0 0.5 1.0 1.5 2.0 2.5 3.0 Drain-to-Source Voltage, VDS -- V 3.5 4.0 IT05158 No.7316-2/4 2SK3489 RDS(on) -- VGS 200 RDS(on) -- Ta 100 Static-Drain-to-Source On-State Resistance, RDS(on) -- mΩ 150 100 ID=4.0A 2.0A 1 2 3 4 5 7 6 8 9 25° = Ta 3 C °C 25 -- °C 75 2 0.1 7 5 3 2 0.01 0.001 --40 --20 0 20 40 5 70.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 100 120 140 IT05160 IS -- VSD VGS=0V 1.0 7 5 3 2 0.1 7 5 3 2 0.01 7 5 3 2 0 0.2 0.4 0.6 0.8 Ciss, Coss, Crss -- pF 5 td (off) 3 tf 2 f=1MHz Ciss 3 2 100 Coss 7 Crss 5 tr td(on) 10 3 5 7 2 1.0 3 5 Drain Current, ID -- A 3 7 0 10 IT05163 7 5 3 2 VDS=10V ID=8A Drain Current, ID -- A 8 6 4 2 0 2 3 4 5 6 Total Gate Charge, Qg -- nC 7 8 9 IT05165 5 10 15 20 25 Drain-to-Source Voltage, VDS -- V VGS -- Qg 10 1 1.4 IT05162 7 5 0.1 1.2 Ciss, Coss, Crss -- VDS 1000 7 2 1.0 Diode Forward Voltage, VSD -- V IT05161 VDD=15V VGS=10V Gate-to-Source Voltage, VGS -- V 80 10 7 5 3 2 5 7 SW Time -- ID 100 0 60 0.001 2 3 Drain Current, ID -- A Switching Time, SW Time -- ns 20 2 3 1.0 7 5 40 =10V VGS Case Temperature, Tc -- °C VDS=10V 2 .0A, I D=4 IT05159 yfs -- ID 10 7 5 10 Source Current, IS -- A Forward Transfer Admittance, yfs -- S Gate-to-Source Voltage, VGS -- V I D= 60 0 --60 0 0 4.0 S= , VG 2.0A 5°C 25°C --25° C 50 V 80 Ta= 7 Static-Drain-to-Source On-State Resistance, RDS(on) -- mΩ Ta=25°C ASO ≤10µs IDP=32A 10 0µ s ID=8A 10 7 5 3 2 1m s 10 DC 1.0 7 5 3 2 0.1 7 5 3 2 30 IT10366 100 op ms era Operation in this area is limited by RDS(on). ms tio n Ta=25°C Single pulse Mounted on a ceramic board (250mm2✕0.8mm) 0.01 0.1 2 3 5 7 1.0 2 3 5 7 10 2 Drain-to-Source Voltage, VDS -- V 3 5 IT05166 No.7316-3/4 2SK3489 PD -- Ta 1.5 M ou nte do na ce ram 1.0 ic bo ard PD -- Tc 4.0 Allowable Power Dissipation, PD -- W Allowable Power Dissipation, PD -- W 2.0 (2 50 mm 0.5 2 ✕0 .8m m) 0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT05167 0 20 40 60 80 100 140 120 Case Temperature, Tc -- °C 160 IT05168 Note on usage : Since the 2SK3489 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of October, 2005. Specifications and information herein are subject to change without notice. PS No.7316-4/4