Ordering number:ENN5933 N-Channel Silicon MOSFET FSS212 DC/DC Converter Applications Features Package Dimensions · Low ON resistance. · 4V drive. unit:mm 2116 [FSS212] 5 4 1 : Source 2 : Source 0.2 3 : Source 4 : Gate 5 : Drain 6 : Drain 7 : Drain 8 : Drain SANYO : SOP8 1.8max 1 6.0 4.4 0.3 8 0.595 Specifications 1.27 0.43 0.1 1.5 5.0 Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Drain-to-Source Voltage Conditions Ratings VDSS VGSS Gate-to-Source Voltage Drain Current (DC) Unit 30 V ±24 V 8 A ID Drain Current (pulse) IDP PW≤10µs, duty cycle≤1% 52 A Allowable Power Dissipation Mounted on a ceramic board (1200mm2×0.8mm) 1.8 W Channel Temperature PD Tch 150 ˚C Storage Temperature Tstg –55 to +150 ˚C Electrical Characteristics at Ta = 25˚C Parameter Symbol Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance V(BR)DSS IDSS Conditions ID=1mA, VGS=0 VGS=±16V, VDS=0 RDS(on)1 ID=8A, VGS=10V ID=4A, VGS=4V RDS(on)2 Ciss Output Capacitance Reverse Transfer Capacitance typ max 30 VDS=10V, ID=1mA VDS=10V, ID=8A Unit V VDS=30V, VGS=0 IGSS VGS(off) | yfs | Input Capacitance Ratings min 10 µA ±10 µA 2.4 V 21 27 mΩ 42 58 mΩ 1.0 8 12 S 640 pF Coss VDS=10V, f=1MHz VDS=10V, f=1MHz 380 pF Crss VDS=10V, f=1MHz 180 pF Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 31000TS (KOTO) TA-2551 No.5933-1/4 FSS212 Continued from preceding page. Parameter Symbol Turn-ON Delay Time min typ Unit max td(on) See specified Test Circuit 15 ns tr See specified Test Circuit 180 ns td(off) See specified Test Circuit 70 ns tf See specified Test Circuit 80 ns Qg VDS=10V, ID=8A, VGS=10V 21 nC 5 nC 5 nC Rise Time Turn-OFF Delay Time Ratings Conditions Fall Time Total Gate Charge Gate-to-Source Charge Qgs Gate-to-Drain "Miller" Charge Qgd VDS=10V, ID=8A, VGS=10V VDS=10V, ID=8A, VGS=10V Diode Forward Voltage VSD IS=8A, VGS=0 0.85 1.2 V Switching Time Test Circuit VDD=15V VIN 10V 0V ID=8A RL=1.9Ω VIN PW=10µs D.C.≤1% D VOUT G FSS212 P.G 50Ω S ID - VDS 8 5 4 3V 3 6 5 4 3 2 2 1 1 0 7 75°C 3.5V 6 VGS=2.5V 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 0 0 1.0 0.5 Drain-to-Source Voltage, VDS – V yfs -- ID 100 7 5 3 2 10 7 5 Ta= C 75° 25° C 3 2 1.0 7 5 3 2 0.1 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 Drain Current, ID – A 3 1.5 2.0 2.5 3.0 3.5 4.0 5 7 10 2 3 R DS(on) - VGS 60 VDS=-10V °C -25 1.0 Gate-to-Source Voltage, VGS – V Static Drain-to-Source On-State Resistance, RDS(on) – mΩ Forward Transfer Admittance, | yfs | – S Ta=25°C 7 25°C 8 VDS=10V 9 6V Drain Current, ID – A 8V ID - VGS 10 4V 9 10V Drain Current, ID – A 10 Ta=25°C ID=8A 50 4A 40 30 20 10 0 0 2 4 6 8 10 12 14 16 18 20 Gate-to-Source Voltage, VGS – V No.5933-2/4 FSS212 10 7 5 60 I D=4A 50 =4V ,VGS 40 =10V I D=8A,V GS 30 20 1.0 7 5 3 2 0.1 7 5 0 -60 -40 -20 0 20 40 60 80 100 120 140 0.01 160 0 0.1 0.2 Ciss, Coss, Crss - VDS 10000 7 5 0.5 0.7 0.8 0.9 1.0 VDS=10V ID =8A 9 Gate-to-Source Voltage, VGS – V Ciss, Coss, Crss – pF 0.4 VGS - Q g 10 f = 1MHz 3 2 1000 7 5 Ciss 3 Coss 2 Crss 100 7 5 3 2 8 7 6 5 4 3 2 1 0 5 10 15 20 25 0 30 0 5 Drain-to-Source Voltage, VDS – V 100 7 5 3 2 VDD =15V VGS=10V 7 5 Drain Current, ID – A 3 2 td(off) 100 7 tf 5 tr 3 td(on) 2 10 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 Drain Current, ID – A PD - 2.0 1.8 15 20 25 10 7 5 3 2 1.0 7 5 3 2 A S O I DP = 5 2 A 100µs 1m s ID = 8 A 10 DC Operation in this area is limited by RDS(on). ms 10 0m s op er at io n 0.1 7 5 Ta=25°C 3 Single pulse 2 Mounted on a ceramic board (1200mm2×0.8mm) 0.01 2 3 5 7 1.0 2 3 5 7 10 2 0.01 2 3 5 7 0.1 3 5 Drain-to-Source Voltage, VDS – V Ta M ou nt 1.6 ed on ac er 1.2 am ic bo ar d (1 20 0.8 0m m2 ×0 .8 0.4 0 0 10 Total Gate Charge, Qg – nC SW Time - I D 1000 Switching Time, SW Time – ns 0.3 Diode Forward Voltage, VSD – V Ambient Temperature, Ta – ˚C Allowable Power Dissipation, PD – W 0.6 3 2 10 10 -25°C 70 3 2 °C 80 I F - VSD VGS= 0 25°C 90 Forward Current, IF – A Static Drain-to-Source On-State Resistance, RDS(on) – mΩ 100 Ta=7 5 R DS(on) - Ta m m ) 20 40 60 80 100 120 140 160 Ambient Temperature, Ta – ˚C No.5933-3/4 FSS212 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of March, 2000. Specifications and information herein are subject to change without notice. PS No.5933-4/4