ECH8601 Ordering number : ENN7288B N-Channel Silicon MOSFET ECH8601 General-Purpose Switching Device Applications Features • • • • Low ON-resistance. Suitable for lithim-ion battery use. Drain common specification. 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 20 Gate-to-Source Voltage VGSS ±12 V 7 A Drain Current (DC) ID Drain Current (Pulse) IDP PD Allowable Power Dissipation Total Dissipation Channel Temperature PT Tch Storage Temperature Tstg V PW≤10µs, duty cycle≤1% 40 A Mounted on a ceramic board (900mm2✕0.8mm)1unit 1.4 W Mounted on a ceramic board (900mm2✕0.8mm) 1.5 W 150 °C --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Conditions V(BR)DSS IDSS IGSS ID=1mA, VGS=0 VDS=20V, VGS=0 VGS(off) yfs VGS=±8V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=3.5A RDS(on)1 RDS(on)2 Ratings min typ Unit max 20 V 0.5 1 µA ±10 µA 1.3 V 7.7 11 ID=4A, VGS=4.5V ID=4A, VGS=4.0V 14 17 23 mΩ 15 18 24 mΩ RDS(on)3 RDS(on)4 ID=4A, VGS=3.1V ID=2A, VGS=2.5V 17 20 30 mΩ 21 24 35 mΩ Input Capacitance Ciss 910 Output Capacitance Coss VDS=10V, f=1MHz VDS=10V, f=1MHz 350 pF Reverse Transfer Capacitance Crss VDS=10V, f=1MHz 170 pF Static Drain-to-Source On-State Resistance Marking : KC S pF Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN N1504 TS IM TB-00000096 / 22503 TS IM TA-100363 / O1002 TS IM TA-3673 No.7288-1/4 ECH8601 Continued from preceding page. Parameter Symbol Ratings Conditions min typ Unit max Turn-ON Delay Time td(on) See specified Test Circuit. 15 ns Rise Time tr td(off) See specified Test Circuit. 100 ns See specified Test Circuit. 61 ns tf See specified Test Circuit. 90 ns Turn-OFF Delay Time Fall Time Total Gate Charge Qg VDS=10V, VGS=10V, ID=7A 23 nC Gate-to-Source Charge Qgs VDS=10V, VGS=10V, ID=7A 1.3 nC Gate-to-Drain “Miller” Charge Qgd VDS=10V, VGS=10V, ID=7A Diode Forward Voltage VSD IS=7A, VGS=0 Package Dimensions unit : mm 2206B 3.4 0.25 0.3 5 1.2 VDD=10V 4V 0V 0.15 ID=3.5A RL=2.86Ω VOUT VIN 2.8 D 2.3 V Switching Time Test Circuit VIN 8 nC 0.83 PW=10µs D.C.≤1% G 1 0.25 4 0.65 ECH8601 2.9 0.07 0.9 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 P.G 50Ω S SANYO : ECH8 Electrical Connection 8 7 6 5 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 1 2 3 4 Top view No.7288-2/4 ECH8601 ID -- VDS 9 1.5V 8 5 4 3 5 4 25°C 6 6 °C 7 7 --25°C 8 Ta=7 5 Drain Current, ID -- A 9 VDS=10V 4.0V Drain Current, ID -- A 10 ID -- VGS 10 2.5V 11 2.0V 3.5V 3.0V 12 3 2 2 1 1 VGS=1.0V 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 0 Drain-to-Source Voltage, VDS -- V 0 RDS(on) -- VGS 50 0.5 1.0 1.5 2.0 Gate-to-Source Voltage, VGS -- V IT03626 IT03627 RDS(on) -- Ta 40 4A ID=2A 20 15 6 4 8 Gate-to-Source Voltage, VGS -- V 5 --2 5 Forward Current, IF -- A Forward Transfer Admittance, yfs -- S = Ta °C °C C 75 25° 3 3 5 7 0.1 2 5 3 7 10 Drain Current, ID -- A 3 1.0 7 5 3 2 0.1 7 5 3 2 0.4 0.5 0.6 0.7 100 125 150 IT03629 0.8 0.9 1.0 1.1 1.2 IT03631 Ciss, Coss, Crss -- VDS 3 f=1MHz 2 100 Ciss, Coss, Crss -- pF 2 td(off) 7 tf tr 3 2 td(on) Ciss 1000 7 5 Coss 3 Crss 2 100 10 7 0.1 75 Diode Forward Voltage, VSD -- V VDD=10V VGS=4V 5 50 10 7 5 3 2 IT03630 SW Time -- ID 5 3 2 25 VGS=0 0.01 7 5 3 2 0.001 0.3 2 2 0 IF -- VSD 3 2 2 7 --25 Ambient Temperature, Ta -- °C 3 10 15 IT03628 VDS=10V 1.0 0.1 Switching Time, SW Time -- ns 10 yfs -- ID 5 I D= 20 5°C 2 V =4.0 VGS 4A, 10 --50 10 0 , 2A I D= 25 Ta= 7 25 5V =2. V GS C 30 30 C 35 35 --25 ° 40 25° 45 Static Drain-to-Source On-State Resistance, RDS(on) -- Ω Static Drain-to-Source On-State Resistance, RDS(on) -- Ω Ta=25°C 7 5 2 3 5 7 1.0 2 3 Drain Current, ID -- A 5 7 2 10 IT03632 0 2 4 6 8 10 12 14 16 Drain-to-Source Voltage, VDS -- V 18 20 IT03633 No.7288-3/4 ECH8601 VGS -- Qg 10 9 8 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V 100 7 5 3 2 VDS=10V ID=3.5A 7 6 5 4 3 2 1.5 1 0 0 5 10 15 20 25 Total Gate Charge, Qg -- nC PD -- Ta 1.8 Allowable Power Dissipation, PD -- W IT03634 10 7 5 3 2 ASO 1m ID=7A s 10 ms 10 DC 0m s op era 1.0 7 5 3 2 0.1 7 5 3 2 <10µs IDP=40A tio n Operation in this area is limited by RDS(on). Ta=25°C Single pulse Mounted on a ceramic board (900mm2✕0.8mm) 0.01 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 Drain-to-Source Voltage, VDS -- V 2 3 IT03635 1.6 1.5 1.4 1.2 To ta lD 1.0 iss 1u 0.8 ipa ni t tio n 0.6 0.4 0.2 0 Mounted on a ceramic board (900mm2✕0.8mm) 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT03636 Note on usage : Since the ECH8601 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of November, 2004. Specifications and information herein are subject to change without notice. PS No.7288-4/4