ECH8305 Ordering number : ENN8145 P-Channel Silicon MOSFET ECH8305 General-Purpose Switching Device Applications Features • • Low ON-resistance. 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --60 Gate-to-Source Voltage VGSS ±20 V --4 A Drain Current (DC) ID Drain Current (Pulse) IDP PD Allowable Power Dissipation V PW≤10µs, duty cycle≤1% --20 A Mounted on a ceramic board (900mm2✕0.8mm) 1.6 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current V(BR)DSS IDSS IGSS Conditions ID=--1mA, VGS=0 VDS=--60V, VGS=0 VGS(off) yfs VGS=±16V, VDS=0 VDS=--10V, ID=--1mA VDS=--10V, ID=--2A RDS(on)1 RDS(on)2 ID=--2A, VGS=--10V ID=--1A, VGS=--4V Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS=--20V, f=1MHz VDS=--20V, f=1MHz VDS=--20V, f=1MHz Turn-ON Delay Time td(on) tr td(off) tf Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Qg Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD Ratings min typ Unit max --60 V --1 ±10 --1.0 4.3 --2.4 7.3 µA µA V S 62 85 mΩ 82 115 mΩ 1680 pF 122 pF 102 pF See specified Test Circuit. 15 ns See specified Test Circuit. 17 ns See specified Test Circuit. 185 ns See specified Test Circuit. 65 ns VDS=--30V, VGS=--10V, ID=--4A VDS=--30V, VGS=--10V, ID=--4A 34 nC 4.5 nC VDS=--30V, VGS=--10V, ID=--4A IS=--4A, VGS=0 5.8 --0.81 nC --1.2 V Marking : JG Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 11205PE TS IM TB-00000547 No.8145-1/4 ECH8305 Package Dimensions unit : mm 2222A 0.25 8 1 0.25 4 0.65 6 5 0.15 2.3 5 7 1 : Source 2 : Source 3 : Source 4 : Gate 5 : Drain 6 : Drain 7 : Drain 8 : Drain 2.8 0.3 8 Electrical Connection 1 2.9 2 3 4 0.07 0.9 1 : Source 2 : Source 3 : Source 4 : Gate 5 : Drain 6 : Drain 7 : Drain 8 : Drain Top view SANYO : ECH8 Switching Time Test Circuit VDD= --30V VIN 0V --10V ID= --2A RL=15Ω VOUT VIN D PW=10µs D.C.≤1% G ECH8305 50Ω ID -- VDS .0V --3 VGS= --2.5V --2.0 --1.5 --1.0 --3 --2 --1 --25 25°C °C --2.5 Drain Current, ID -- A --10V --3.0 VDS= --10V --4.0 --3.5 ID -- VGS --4 V --5. 0 --8.0 V -6.0 V V --4.0 Drain Current, ID -- A S Ta=7 5°C P.G --2.0 --2.5 --0.5 0 0 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 Drain-to-Source Voltage, VDS -- V --0.9 --1.0 IT08424 0 --0.5 --1.0 --1.5 Gate-to-Source Voltage, VGS -- V --3.0 --3.5 IT08425 No.8145-2/4 ECH8305 RDS(on) -- VGS Ta=25°C 60 40 7 5 C 5° --2 = °C Ta 75 1.0 °C 25 7 5 2 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 Drain Current, ID -- A 5 7 --10 20 40 60 80 100 120 140 160 IT08427 IF -- VSD VGS=0 --1.0 7 5 3 2 --0.1 7 5 3 2 --0.001 --0.2 5 Ciss, Coss, Crss -- pF 5 3 td(on) --0.8 --0.9 --1.0 --1.1 IT08429 Ciss 1000 7 5 3 2 Coss 100 tr 10 --0.7 f=1MHz 2 tf 2 --0.6 3 100 7 --0.5 Ciss, Coss, Crss -- VDS 5 td(off) 2 --0.4 Diode Forward Voltage, VSD -- V VDD= --30V VGS= --10V 3 --0.3 IT08428 SW Time -- ID 7 Switching Time, SW Time -- ns 0 --0.01 7 5 3 2 3 0.1 --0.01 Crss 7 5 7 5 3 --0.1 2 3 2 --1.0 Drain Current, ID -- A 5 7 3 5 0 7 Drain Current, ID -- A --7 --6 --5 --4 --3 --2 --1 0 5 10 15 20 25 --30 --40 --50 --60 IT08431 ASO 5 3 2 --8 0 --20 Drain-to-Source Voltage, VDS -- V VDS= --30V ID= --4A --9 --10 IT08430 VGS -- Qg --10 Gate-to-Source Voltage, VGS -- V --20 5° C 10 2 --40 --10 7 5 3 2 VDS= --10V 3 20 Ambient Temperature, Ta -- °C yfs -- ID 2 40 0 --60 --4 --6 --8 --10 --12 --14 --16 --18 --20 Gate-to-Source Voltage, VGS -- V IT08426 3 60 Ta= 7 --2 0 80 C 80 --4V S= G V , V --1A --10 I D= S= VG , --2A I D= 100 --25° 100 120 C 120 140 25° --1A 20 Forward Transfer Admittance, yfs -- S Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ ID= --2A 140 RDS(on) -- Ta 160 Forward Current, IF -- A Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 160 30 Total Gate Charge, Qg -- nC 35 40 IT08432 --10 7 5 3 2 ID= --4A DC --1.0 7 5 3 2 --0.1 7 5 3 2 <10µs 10 0µ s 1m 10 s ms IDP= --20A 10 0m op s er ati Operation in this area is limited by RDS(on). on (T a= 25 °C ) Ta=25°C Single pulse Mounted on a ceramic board (900mm2✕0.8mm) --0.01 --0.01 2 3 5 7--0.1 2 3 5 7--1.0 2 3 5 7 --10 2 3 Drain-to-Source Voltage, VDS -- V 5 7--100 IT08433 No.8145-3/4 ECH8305 PD -- Ta Allowable Power Dissipation, PD -- W 1.8 1.6 M ou 1.4 nt 1.2 ed on ac er 1.0 am ic bo ar 0.8 d (9 00 m 0.6 m2 ✕ 0. 8m 0.4 m ) 0.2 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT08434 Note on usage : Since the ECH8305 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of January, 2005. Specifications and information herein are subject to change without notice. PS No.8145-4/4