SEMTECH SC2616

SC2616
Complete DDR Power Solution
POWER MANAGEMENT
Description
Features
The SC2616 is a fully integrated DDR power solution providing power for the VDDQ and the VTT rails. The SC2616
also completely adheres to the ACPI sleep state power
requirements. A synchronous buck controller provides
the high current of the VDDQ at high efficiency, while a
linear sink/source regulator provides the termination
voltage with 2 Amp Source/Sink capability. This approach
makes the best trade-off between cost and performance. Additional logic and UVLOs complete the functionality of this single chip DDR power solution in compliance with S3 and S5 motherboard signals.
‹ High efficiency (90%) switcher for VDDQ supplies
20 Amps
‹ High current gate drives
‹ Single chip solution complies fully with ACPI power
sequencing specifications
‹ Internal S3 state LDO supplies high standby
VDDQ current (0.65Amp Min.)
‹
‹
‹
‹
‹
‹
The SC2616 is capable of sourcing up to 20A at the
switcher output, and 2A source/sink at the VTT output.
The MLP package provides excellent thermal impedance
while keeping small footprint. VDDQ current limit as well
as 3 independent thermal shutdown circuits assure safe
operation under all fault conditions.
ACPI sleep state controlled
2 Amp VTT source/sink capability
UVLO on 5V and 12V
Independent thermal shutdown for VDDQ and VTT
Fast transient response
18 pin MLP package
Applications
‹ Power solution for DDR memory per ACPI
motherboard specification
‹ High speed data line termination
‹ Memory cards
Typical Application Circuit
5V
12V
Cin
0.1uF
5V STBY
16
0.1uF
Suspend to RAM
Suspend to disk
4
S3
S5
11
10
18
17
0.1uF
1uF
10k 10k
12
3
12VCC
5VCC
5VSBY
TG
SLP_S3
BG
SLP_S5
PGND
SS/EN
VDDQSTBY
COMP
VDDQIN
AGND
FB
LGND
VTTSNS
VTT
VTT
9
L
Revision 3, March 2003
VDDQ
15
0.1uF
14
Cout
13
7
8
1
6
5
VTT
0.1uF
19
2
U4 SC2616
HSINKPAD
10uF
1
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SC2616
POWER MANAGEMENT
Dual 5V Typical Application Schematic
5V
Ins tantly Available
ACPI Controller
5V
Cin
5VSTBY
(SC1549)
12V
5V Dual
0.1uF
Cin
1uF
1uF
16
0.1uF
Suspend to RAM
Suspend to disk
10k
4
S3
S5
11
10
18
17
0.1uF
12
3
12VCC
5VCC
5VSBY
TG
SLP_S3
BG
SLP_S5
PGND
SS/EN
VDDQSTBY
COMP
VDDQIN
AGND
FB
LGND
VTTSNS
VTT
VTT
9
L
VDDQ
15
14
Cout
0.1uF
13
7
8
1
6
2 AMP
5
VTT
0.1uF
19
2
U4 SC2616
HSINKPAD
10k
5V STBY
Figure 1: ACPI controller supplies “always on” 5V supply, eliminating the need for back to back MOSFETs. (see
applications section)
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SC2616
POWER MANAGEMENT
Absolute Maximum Ratings
Exceeding the specifications below may result in permanent damage to the device, or device malfunction. Operation outside of the parameters specified
in the Electrical Characteristics section is not implied.
Parameter
Symbol
Maximum
Units
Supply Voltage, 5VCC to AGND
V 5V C C
7
V
Supply Voltage, 12VCC to AGND
V 12V C C
15
V
Standby Input Voltage
V 5V S B Y
7
V
I/O
5VSTBY +0.3, AGND -0.3
V
0.3
V
IO(VTT)
±2
A
Operating Ambient Temperature Range
TA
0 to 70
°C
Operating Junction Temperature
TJ
125
°C
Thermal Resistance Junction to Ambient *
θJA
25
°C/W
Thermal Resistance Junction to Case *
θJC
4
°C/W
Storage Temperature
TSTG
-65 to 150
°C
Lead Temperature (Soldering) 10seconds
TLEAD
300
°C
TG/BG DC Voltage
12Vcc + 0.3, AGND -0.5
V
TG/BG AC Voltage
12Vcc + 1.0, AGND -1.0
V
2
kV
Inputs
AGND to PGND or LGND
VTT Output Current
ESD Rating (Human Body Model)
ESD
Electrical Characteristics
* See Mounting Considerations.
Unless specified: TA = 25°C, 12VCC = 12V, 5VCC = 5V, 5VSBY = 5V.
Parameter
Symbol
Conditions
Min
Typ
Max
Units
5V Supply Voltage
V 5V C C
4.5
5
5.5
V
12V Supply Voltage
V 12V C C
10.8
12
13.2
V
5V Standby Voltage
V 5V S B Y
4.5
5
5.5
V
Quiescent Current
IQ(5VSBY)
S 0, S 5
1.8
2.5
S3
3.5
5.0
S3/S5 Threshold
TTL
mA
V
12VCC Under Voltage Lockout
UVLO12VCC
7
8.2
10
V
5VCC Under Voltage Lockout
UVLO5VCC
3.5
3.7
4
V
Feedback Reference
Feedback Current
1.25
VREF
VFB = 1.25V
IFB
V
2
µA
SS/EN Shutdown Threshold
VEN(TH)
0.3
V
Thermal Shutdown
TJ-SHDN
150
°C
Thermal Shutdown Hysteresis
TJ-HYST
10
°C
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SC2616
POWER MANAGEMENT
Electrical Characteristics (Cont.)
Unless specified: TA = 25°C, 12VCC = 12V, 5VCC = 5V, 5VSBY = 5V.
Parameter
Symbol
Conditions
Min
Typ
Max
Units
Sw itcher
Load Regulation
IVDDQ = 0A to 10A; S0; Fig 2:
Oscillator Frequency
fOSC
Soft Start Current
ISS
0.2
225
250
%
275
25
Duty Cycle
0
KHz
µA
80
%
70
%
Overcurrent Trip Voltage
VTRIP
% of VDDQ Setpoint
Top Gate Rise Time
TGR
Gate capacitance = 4000pF
25
nS
Top Gate Fall Time
TGF
Gate capacitance = 4000pF
25
nS
Bottom Gate Rise Time
BGR
Gate capacitance = 4000pF
35
nS
Bottom Gate Fall Time
BGF
Gate capacitance = 4000pF
35
nS
50
nS
0.8
mS
38
dB
5
MHz
± 60
µA
VIN = 5V
19
dB
IPWRGD = 1mA, sink
50
400
mV
VPWRGD = 5V; S0
0.1
2
µA
Dead Time
td
Error Amplifier Transconductance
gm
Error Amplifier Gain @ DC
A EA
Error Amplifier Bandwidth
GBW
50
20
RCOMP = open
Error Amplifier Source/Sink Current
Modulator Gain
AM
Power Good Low
Power Good High Leakage
60
S TB Y LD O
Output Current
IVDDQSTBY
DC current
∆V/∆I
IVDDQ = 0A to 750mA; S3; Fig1:
0.5
%
ILIM
S3 = 0, VTT floating
1
A
Output Voltage
VTT
VVDDQSTBY = 2.500V
Source and Sink Currents
IVTT
Load Regulation
Current Limit
750
mA
V TT LD O
Load Regulation
AEA_VTT
Current Limit
VTTILIM
 2003 Semtech Corp.
1.250
1.265
±1.8
∆VTT/ ∆I
Error Amplifier Gain
1.235
A
IVTT =+1.8A to -1.8A
S3 = high
4
V
±1
%
75
dB
3
A
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SC2616
POWER MANAGEMENT
Pin Configuration
Ordering Information
TOP VIEW
FB
1
18
SS/EN
VTTSNS
2
17
COMP
LGND
3
16
12VCC
5VSBY
4
15
TG
VTT
5
14
BG
VTT
6
13
PGND
VDDQSTBY
7
12
AGND
VDDQIN
8
11
SLP_S3
5VCC
9
10
SLP_S5
Part Numbers
P ackag e
SC2616MLTR(1)
MLP-18
Note:
(1) Only available in tape and reel packaging. A reel
contains 3000 devices.
(18 Pin MLP)
Note: Pin 19 is the thermal Pad on the bottom
of the device
Pin Descriptions
Pin #
Pin Name
1
FB
2
VTTSNS
3
LGND
VTT return. Connect to point of load return. The trace connecting to this pin must be able to carry
2 Amps.
4
5V S B Y
Bias supply for the chip. Connect to 5V standby.
5, 6
VTT
7
Pin Function
Feedback for the STBY LDO and the switcher for VDDQ.
VTT LDO feedback and remote sense input.
VTT return. Connect to point of load return. The trace connecting to this pin must be able to carry
2 Amps.
VDDQSTBY S3 VDDQ output. Provision must be made to prevent the VDDQSTBY supply from back feeding
the input supply (see typical application schematic). Traces connecting to this pin must be
capable of carring 1 Amp.
8
VDDQIN
9
5V C C
10
S LP _S 5
Connect to S5 signal from motherboard.
11
S LP _S 3
Connect to S3 signal from motherboard.
12
AGND
Analog ground.
13
PGND
Gate drive return. Keep this pin close to bottom FET source.
14
BG
Bottom gate drive.
15
TG
Top gate drive.
16
12V C C
Supply to the upper and lower gate drives.
17
COMP
Compensation pin for the PWM transconductance amplifier.
18
SS/EN
Soft start capacitor to GND. Pull low to less than 0.3V to disable controller.
19
TH_PAD
 2003 Semtech Corp.
VDDQ power input to VTT LDO. The trace connecting to this pin must be able to carry 2 Amps.
Supply to the lower gate drive.
Copper pad on bottom of chip used for heatsinking. This pin is internally connected to AGND.
5
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SC2616
POWER MANAGEMENT
Timing Diagram
5V, 12V
Rails
S3
S5
1.25V
1.0V
0.3V
SS/EN
PGOOD
TG
BG
STBY
VDDQ
VTT
Vssqsb
Vddqsw
VDDQ
S0
S3
S0
S5
S0
Block Diagram
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SC2616
POWER MANAGEMENT
Typical Characteristics
100%
40
35
80%
DUTY CYCLE (%)
Gain (dB)
30
25
20
15
10
60%
40%
20%
5
0%
0
1E+3
10E+3
100E+3
1.2
1E+6
1.3
1.4
1.5
1.6
1.7
VCOMP (V)
Frequency (Hz)
VCOMP vs Duty Cycle
Switching Section Error Amplifier Gain
Vo Error (%)
0.0%
-0.1%
-0.2%
0.0
2.0
4.0
6.0
8.0
10.0
12.0
Io (A)
VDDQ Load Regulation
1.0%
VTT Error (%)
0.5%
0.0%
-0.5%
-1.0%
-2.5
-2.0
-1.5
-1.0
-0.5
0.0
0.5
1.0
1.5
2.0
2.5
Io (A)
VTT Load Regulation, Source and Sink
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SC2616
POWER MANAGEMENT
Evaluation Board Schematic
+12V
J1
12V
C14
Place Jumper JP2 to have Silver
Box on at all times
C15
100uF
0.1uF
J3
5V
J2
GND
1500uF
1500uF
1500uF
1500uF
1500uF
C1
C2
C4
J5
5V STBY
10uF
C5
J4
GND
C16
R12
10k
R13
10k
*
*
*
5V
C18
C3
R4
2.2
R3
2.2
Q1
1uF
SOURCE TO SOURCE
CONFIGURATION
Q2
R9 10k
J6
GND
L1
2.8uH
U4 SC2616
5VSBY 4
J7
BF_CUT/S3
11
J11
10
PWR GD/S5
18
J12
SS/EN
17
C10
12
R6
33K
3
2
TBD
0.1uF
C12
1nF
5VCC
5VSBY
TG
SLP_S3
BG
SLP_S5
PGND
SS/EN
VDDQSTBY
COMP
VDDQIN
AGND
FB
LGND
VTTSNS
19
C11
12VCC
HSINKPAD
16
VTT
VTT
9
15
Q3
R11 2.2
14
J8
13
J9
VDDQ
J10
7
8
R5
10.0k/1%
1
6
5
VTT
C17
J13
VTT
R7
10.0k/1%
C13
0.1uF
330uF
J14
GND
J15
J18
GND
R10
J20
PWR_OK
1500uF
1500uF 1500uF
VDDQ
C7
C9
C6
C8
0.1uF
5VSBY
*
J16
GND
J17
Q4
2N2222
20K
R8
+12V
*
10k
JP2
5V
1
2
3.3V
3.3V
COM
5V
COM
5V
COM
PWR_OK
5VSB
12V
3.3V
-12V
COM
PS_ON
COM
COM
COM
-5V
5V
5V
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
MAN PS_ON
J19
ATX M/B MOLEX 39-29-9202
Figure 2
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SC2616
POWER MANAGEMENT
Evaluation Board Bill of Materials
Item
Quantity
Reference
1
8
C1,C2,C4,C5,C6,C7,C8,C18
2
1
C3
3
5
4
Part
1500uF
Manufacturer
Sanyo MX_CX
1uF
any
C9,C11,C15,C16,C17
0.1uF
any
1
C 10
TBD
5
1
C 12
1nf
6
1
C 13
330uF
any
7
1
C 14
100uF
any
8
1
JP 2
MAN PS_ON
9
19
10
J1,J2,J3,J4,J5,J6,J7,J8,J9,J10,J11,
J12,J13,J14,J15,J16,J17,J18,J20
E D 5052
1
J1 9
ATX M/B
11
1
L1
2.8uH
12
3
Q1,Q2,Q3
13
1
Q4
14
3
R3,R4,R11
15
2
R5,R7
16
1
17
F D B 7030B L
MOLEX P/N: 39-29-9202
FALCO P/N: T50168
(www.falco.com)
Fairchild P/N: FDB7030BL
2N2222
any
2.2
any
10.0k, 1%
any
R6
33k
any
4
R8,R9,R12,R13
10k
any
18
1
R10
20k
any
19
1
U4
S C 2616
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SC2616
POWER MANAGEMENT
Typical Characteristics (Cont.)
Figure 3: S3 to S0 state transition with 600mA load on VDDQ
Ch1: TG drive, Ch2: VDDQ w/2.5V offset, Ch3, S3, Ch4: SS/EN
Note: VDDQ changes 16mV between S0 and S3 states (see cursor).
Figure 4: S3 to S0 state transition with 800mA load on VDDQ
Ch1: TG drive, Ch12 VDDQ w/2.5V offset, Ch3, S3, Ch4: SS/EN
Note: VDDQ changes 22mV between S0 and S3 states (see cursor).
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SC2616
POWER MANAGEMENT
Applications Information
Description
The Semtech SC2616 DDR power supply controller is
the latest and most complete switching and linear
regulator combination, providing the necessary functions
to comply with S3 and S5 sleep state signals generated
by the Desktop Computer Motherboards. VDDQ supply,
and VTT termination voltage are supplied to the Memory
bus during S0 (normal operation) state. During S0, VDDQ
is supplied via the Switching regulator, sourcing high
output currents to the VDD bus as well as supplying the
termination supply current. The SC2616 is capable of
driving a 4000pf capacitor in 25ns (typical, top gate).
This drive capability allows 15-20A DC load on the VDDQ
supply. The VTT termination voltage is an internal sink/
source linear regulator, which during S0 state receives
its power from the VDDQ bus. It is capable of sourcing
and sinking 2 Amps (max). The current limit on this pin is
set to 3 Amps (typical).
Output Current and PCB layout
The current handling capacity of SC2616 depends upon
the amount of heat the PC board can sink from the
SC2616 thermal pad. (See mounting instructions). The
PC board layout must take into consideration the high
current paths, and ground returns for both the VDDQ
and VTT supply pins. VTT, LGND, VDDQ, 5VCC and PGND
traces must also be routed using wide traces to minimize
power loss and heat in these traces, based on the current
handling requirements.
S3 and S5 States
During S3 and S5 sleep states, the operation of the VDDQ
and VTT supplies is governed by the internal sequencing
logic in strict adherence with motherboard specifications.
The timing diagram demonstrates the state of the
controller, and each of the VDDQ and VTT supplies during
S3 and S5 transitions. When S3 is low, the VDDQ supplies
the “Suspend To RAM” current of 650 mA (min) to
maintain the information in memory while in standby
mode. The VTT termination voltage is not needed during
this state, and is thus tri-stated during S3. Once S3 goes
high, the VDDQ switcher recovers and takes control of
the VDDQ supply voltage. When S5 and S3 are pulled
low, all supplies shut down. The SS/EN pin must be pulled
low (<0.3V) and high again to restart the SC2616. This
can be achieved by cycling the input supplies, 5V and
 2003 Semtech Corp.
12V since both supplies have to be higher than their UVLO
thresholds for proper start-up.
Initial Conditions and Event Sequencing
The main switcher will start-up in Asynchronous Mode
when the voltage on SS/EN pin is greater than ~0.3V.
The SS/EN will go high only after the 5Vcc and 12Vcc are
higher than their respective UVLO thresholds. The switcher
achieves maximum duty cycle when SS/EN reaches 0.8V.
When the SS/EN equals 1.25V, the synchronous FET will
also be activated.
When the S5 and S3 go high for the first time, the VDDQ
is supplied by the switcher, thus removing the burden of
charging the output capacitors via the linear regulator.
An internal latch guarantees that the supply goes through
S0 state for the first time.
During a transition from S3 to S0, where the 5V and 12V
rails and subsequently the SS/EN pin go high, the internal
VDDQ standby supply will remain ”on” until SS/EN has
reached 1V, at which point only the switcher is supplying
VDDQ , andthe internal “power good” indicator goes high.
The “Memory” activity should be slaved off the “Power
OK” signal from the Silver Box supply, and since the “Power
OK” is asserted after all supplies are within close tolerance
of their final values, the VDDQ switcher should have
been running for some time before the memory is
activated. This is true for typical SS/EN capacitor values
(10nf to 220nf). Thus during transitions from S3 to S0,
the concern that the VDDQ Standby supply may have to
provide high currents before the switcher is activated is
alleviated.
The logic inputs to S3 and S5 pins must be defined before
application of power to the SC2616. This can be
guaranteed by pulling up the S3 and S5 inputs to
5VStandby. If the chipset that asserts these signals is
powered after the SC2616 powers up, and S3 and S5
are not pulled up, erroneous startup and operation can
result.
Care must be taken not to exceed the maximum voltage/
current specifications on to the interface supplying these
signals. The pullup voltage and resistor must be chosen
such that when high, the S3 and S5 do not “back drive”
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SC2616
POWER MANAGEMENT
Applications Information (Cont.)
the interface chipset (Southbridge, etc.) and the maximum
voltage applied to these pins do not exceed the chipsets
specifications. A separate lower pullup supply may be
necessary to avoid damage to the chipset.
“Back Feeding” the Input Supply
When in S3 state, VDDQ is supplied by the linear regulator
and current can flow back from the VDDQ supply through
the body diode of the Top switching MOSFET to the 5V
supply of the Silver Box, which is off during the S3 state.
This in turn shorts out the VDDQ supply and is not
desirable.
Thermal Shutdown
There are three independent Thermal Shutdown
protection circuits in the SC2616: the VDDQ linear
regulator, the VTT source regulator, and the VTT sink
regulator. If any of the three regulators’ temperature
rises above the threshold, that regulator will turn off
independently, until the temperature falls below the
thermal shutdown limit.
There are two approaches to avoiding this reverse current
flow. One method is to place a MOSFET in series with
the top switching MOSFET, but with the source and drain
reversed. (see typical application circuit). The MOSFETs
should be connected with sources connected to each
other, to prevent Gate Source (Vgs) break-down in the
even the inductor current flows in the negative direction,
which subsequenstly can give rise to the switching (Phase)
node voltage flying up to voltages higher than
VGS_Breakdown.
The connection of the MOSFETs in this manner places
the body diodes back to back, thus removing a current
path from VDDQ supply back into the input power source.
Another way is to use the Instantly available ACPI
controllers (such as Semtech SC1549). Such controllers
serve to provide a 5V bus to the user, irrespective of the
Status of S3 and S5 signals. Thus the 5V supply and the
5V Standby are multiplexed to provide an “always On”
5V to the VDDQ supply. Since the 5V supply is always
greater than VDDQ, the back to back MOSFET connection
is no longer necessary.
Current Limit
Current limit is implemented by sensing the VDDQ voltage
If it falls to 60% off its nominal voltage, as sensed by the
FB pin, the TG and BG pins are latched off and the
switcher and the linear converters are shut down. To
recover from the current limit condition, either the power
rails, 5VCC or 12VCC have to be recycled, or the SS/EN
pin must be pulled low and released to restart switcher
operation.
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SC2616
POWER MANAGEMENT
Applications Information (Cont.)
Compensation Components
Calculate the filter double pole frequency (Fp(lc))
Once the filter components have been determined, the
compensation components can be calculated. The goal
of compensation is to modify the frequency response
characteristics of the error amplifier to ensure that the
closed loop feedback system has the highest gain and
bandwidth possible while maintaining stability.
A simplified stability criteria states that the open loop
gain of the converter should fall through 0dB at 20dB/
decade at a frequency no higher than 20-25% of the
switching frequency.
This objective is most simply met by generating asymptotic bode plots of the small signal response of the various sections of the converter.
Fp(lc ) =
1
2π LCo
and calculate ESR Zero frequency (Fz(esr))
Fz( esr ) =
1
2π ⋅ Co ⋅ Re sr
Choose an open loop crossover frequency (Fco) no higher
than 20% of the switching frequency (Fs).
The proximity of Fz(esr) to the crossover frequency Fco
determines the type of compensation required, if
Fz(esr)>Fco/4, use type 3 compensation, otherwise use
type 2. Type 1 compensation is not appropriate and is
not discussed here.
It is convenient to split the converter into two sections,
the Error amp and compensation components being one
section and the Modulator, output filter and divider being the other.
Type 2 Example
First calculate the DC Filter + Modulator + Divider gain.
The DC filter gain is always 0dB, the Modulator gain is
19dB at 5V in and is proportional to Vin, so modulator
gain at any input voltage is.
The total Filter+Modulator+Divider DC Gain is:
V 
GMOD = 19 + 20 ⋅ Log IN 
 5 
As an example of type 2 compensation, we will use the
Evaluation board schematic.
8.06
5


GFMD = 19 + 20 ⋅ Log  + 20 ⋅ Log
 = 13.6dB
5
 6.98 + 8.06 
This is drawn as the line A-B in Figure 5.
the divider gain is given by
 RB 

G DIV = 20 ⋅ Log 
 R A + RB 
Fp(lc ) =
1
1
=
≈ 1.6kHz
−6
2π LCo 2π 3.3 ⋅ 10 ⋅ 3000 ⋅ 10−6
So the total Filter + Modulator + Divider DC Gain is
Vin=5V
SC2616 AND FETS
 RB 
V 

G FMD = 19 + 20 ⋅ Log  IN  + 20 ⋅ Log 
 5 
 R A + RB 
REF
FB
MODULATOR
+
EA
-
3.3uH
OUT
VOUT
6.98k
COMP
SC2610 AND FETS
3000uF
REF
Cs
MODULATOR
+
22mOhm
EA
FB
Cp
-
Rs
L
OUT
8.06k
VOUT
Ra
COMP
Zf
Co
Zs
Zp
 2003 Semtech Corp.
Resr
Rb
13
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SC2616
POWER MANAGEMENT
Applications Information (Cont.)
This is point B in Figure 5.
Fz( esr ) =
100
1
= 2.4kHz
2π ⋅ 3000 ⋅ 10 − 6 ⋅ 22 ⋅ 10 − 3
80
This is point C in Figure 5., the line joining B-C slopes at 40dB/decade, the line joining C-D slopes at -20dB/decade.
E
60
Compensated
Error Amp gain
Gain (dB)
40
For 600kHz switching frequency, crossover is designed
for 100kHz.
G
F
H
20
A
Fz1
B
Fp1
C
0
Total open
loop gain
Fp(lc)
Fz(esr)
-20
Filter+modulator
+divider gain
Since Fz(esr)<<Fco/4 Type 2 compensation is appropriate. Having plotted the line ABCD, and confirmed the
type of compensation necessary, compensation component values can be determined.
At Fco, the line ABCD shows a gain of -27.5dB and a
slope of -20dB/decade. In order for the total open loop
gain to be 0dB with a -20dB/decade slope at this frequency, the compensated error amp gain at Fco must be
+27.5dB with a 0dB slope. This is the line FG on the plot
below.
Since open loop DC gain should be as high as possible to
minimize errors, a zero is placed at F and to minimize
high frequency gain and switching interference a pole is
placed at G.
Fco
-40
-60
100.0E+0
1.0E+3
10.0E+3
100.0E+3
D
1.0E+6
Frequency (Hz)
Figure 5: Type 2 Error Amplifier Compensation
The zero at F should be no higher than Fco/4 and the
pole at G no lower than 4*Fco. The equations to set the
gain and the pole and zero locations allow Shutdown:
A
Rs =
10 20
where A = gain at Fco (in dB)
gm
Cs =
1
2 π ⋅ Fz1 ⋅ Rs
Cp =
1
2π ⋅ Fp1 ⋅ Rs
For this example, this results in the following values.
27.5
Rs =
10 20
= 29.6kΩ ≈ 30kΩ
0.8
Cs ≈
1
= 0.22nF
6 ⋅ 25 ⋅ 10 3 ⋅ 30 ⋅ 10 3
Cp ≈
1
= 14pF (unecessar y due to EA rolloff )
6 ⋅ 400 ⋅ 10 3 ⋅ 30 ⋅ 10 3
 2003 Semtech Corp.
14
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SC2616
POWER MANAGEMENT
Mounting Considerations
Description
The MLP18 is a leadless package whose electrical
connections are made by lands on the bottom surface
of the component. These lands are soldered directly to
the PC board. The MLP has an exposed die attach pad,
which enhances the thermal and electrical characteristics
enabling high power applications. Power handling capability
of the MLP package is typically >2x the power of other
common SMT packages, such as the TSSOP and SOIC
packages. In order to take full advantage of this feature
the exposed pad must be physically connected to the
PCB substrate with solder.
Thermal Pad Via Design
Thermal data for the MLP18 is based on a 4 layer PCB
incorporating vias which act as the thermal path to other
layers. (Ref: Jedec Specification JESD 51-5). Based on
thermal performance, four-layer PCB’s with vias are
recommended to effectively remove heat from the device.
Vias should be 0.3mm diameter on a 1.2mm pitch, and
should be plugged to prevent voids being formed between
the exposed pad and PCB thermal pad due to solder
escaping by capillary action. Plugging can be accomplished
by “tenting” the via during the solder mask process. The
via solder mask diameter should be 100µm larger than
the via diameter.
 2003 Semtech Corp.
Two layer boards have less copper and thus typically
require an increase in the PC board area for effective
heatsinking. The copper area immdiately surrounding
the thermal pad connection must not be interupted by
routing traces.
Exposed Pad Stencil Design
It is good practice to minimize the presence of voids within
the exposed pad inter-connection. Total elimination is
difficult but the design of the exposed pad stencil is
important, a single slotted rectangular pattern is
recommended. (If large exposed pads are screened with
excessive solder, the device may “float”, thus causing a
gap between the MLP terminal and the PCB land
metalization.) The proposed stencil designs enables outgassing of the solder paste during reflow as well as
controlling the finished solder thickness.
15
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SC2616
POWER MANAGEMENT
Outline Drawing - MLP-18
TERMINAL 1
IDENTIFIER
TOP VIEW
TERMINAL 1
BOTTOM VIEW
1 CONTROLLING DIMENSIONS: MILLIMETERS
 2003 Semtech Corp.
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SC2616
POWER MANAGEMENT
Land Pattern - MLP-18
Contact Information
Semtech Corporation
Power Management Products Division
200 Flynn Road, Camarillo, CA 93012
Phone: (805)498-2111 FAX (805)498-3804
 2003 Semtech Corp.
17
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