FUJI 7MBP75TEA120

7MBP75TEA120
1200V / 75A 7 in one-package
Econo IPM series
Features
· Temperature protection provided by directly detecting the junction
temperature of the IGBTs
· Low power loss and soft switching
· High performance and high reliability IGBT with overheating protection
· Higher reliability because of a big decrease in number of parts in
built-in control circuit
Maximum ratings and characteristics
Absolute maximum ratings(at Tc=25°C unless otherwise specified)
Item
Bus voltage
DC
Surge
Short operating
Collector-Emitter voltage *1
Collector current
Brake
Inverter
DC
1ms
DC
Collector power dissipation One transistor *3
Collector current
DC
1ms
Forward current diode
Collector power dissipation One transistor *3
Supply voltage of Pre-Driver *4
Input signal voltage *5
Input signal current
Alarm signal voltage *6
Alarm signal current *7
Junction temperature
Operating case temperature
Storage temperature
Solder temperature *8
Isolating voltage (Terminal to base, 50/60Hz sine wave 1min.)
Screw torque
Mounting (M5)
Symbol
Rating
Min.
Max.
VDC
0
0
400
0
-0.5
-0.5
-0.5
-20
-40
-
VDC(surge)
V SC
VCES
IC
ICP
-IC
PC
IC
ICP
IF
PC
V CC
Vin
Iin
VALM
IALM
Tj
Topr
Tstg
Tsol
Viso
900
1000
800
1200
75
150
75
368
25
50
25
212
20
Vcc+0.5
3
Vcc
20
150
100
125
260
AC2500
3.5
Unit
V
V
V
V
A
A
A
W
A
A
A
W
V
V
mA
V
mA
°C
°C
°C
°C
V
N·m
Note
*1 : Vces shall be applied to the input voltage between terminal P and U or ‚V or W or DB, N and U or V or W or DB
*2 : 125°C/FWD Rth(j-c)/(Ic x VF MAX)=125/0.61/(75 x 2.0) x 100>100%
*3 : Pc=125°C/IGBT Rth(j-c)=125/0.34=368W [Inverter]
Pc=125°C/IGBT Rth(j-c)=125/0.59=212W [Brake]
*4 : VCC shall be applied to the input voltage between terminal No.4 and 1, 8 and 5, 12 and 9, 14 and 13
*5 : Vin shall be applied to the input voltage between terminal No.3 and 1, 7 and 5, 11 and 9, 16,17,18 and 13.
*6 :VALM shall be applied to the voltage between terminal No.2 and 1, No6 and 5, No10 and 9, No.19 and 13.
*7 : IALMshall be applied to the input current to terminal No.2,6,10 and 19.
*8 : Immersion time 10±1sec.
7MBP75TEA120
IGBT-IPM
Electrical characteristics (at Tc=Tj=25°C, Vcc=15V unless otherwise specified.)
Main circuit
Inverter
Item
Collector current at off signal input
Collector-Emitter saturation voltage
Forward voltage of FWD
Brake
Collector current at off signal input
Collector-Emitter saturation voltage
Forward voltage of Diode
Turn-on time
Turn-off time
Reverse recovery time
Symbol
ICES
VCE(sat)
VF
ICES
VCE(sat)
VF
ton
toff
trr
Condition
Min.
VCE=1200V Vin terminal open.
Ic=75A
Terminal
Chip
-Ic=75A
Terminal
Chip
Typ.
Max.
2.2
1.6
1.9
2.3
-
1.0
3.1
2.0
1.0
2.6
3.7
3.6
0.3
1.2
-
VCE=1200V Vin terminal open.
Terminal
Ic=25A
Chip
Terminal
-Ic=25A
Chip
VDC=600V,Tj=125°C
IC=75A Fig.1, Fig.6
VDC=600V, IF=75A Fig.1, Fig.6
Unit
mA
V
V
mA
V
V
µs
Control circuit
Supply current of P-line side pre-driver(one unit)
Supply current of N-line side pre-driver
Input signal threshold voltage (on/off)
Item
Symbol
Iccp
ICCN
Vin(th)
Input zener voltage
Alarm signal hold time
VZ
tALM
Current limit resistor
RALM
Condition
Switching Frequency : 0 to 15kHz
Tc=-20 to 125°C Fig.7
ON
OFF
Rin=20k ohm
Tc=-20°C Fig.2
Tc=25°C Fig.2
Tc=125°C Fig.2
Alarm terminal
Min.
Typ.
Max.
15
45
1.00
1.35
1.70
1.25
1.60
1.95
8.0
1.1
2.0
4.0
1425
1500
1575
Unit
mA
mA
V
V
V
ms
ms
ms
ohm
Protection Section ( Vcc=15V)
Item
Over Current Protection Level of Inverter circuit
Over Current Protection Level of Brake circuit
Over Current Protection Delay time
SC Protection Delay time
IGBT Chip Over Heating
Protection Temperature Level
Over Heating Protection Hysteresis
Under Voltage Protection Level
Under Voltage Protection Hysteresis
Symbol
IOC
IOC
tDOC
tSC
TjOH
Condition
Tj=125°C
Tj=125°C
Tj=125°C
Tj=125°C Fig.4
Surface of IGBT chips
Min.
Typ.
Max.
113
38
150
5
-
8
-
20
0.5
12.5
-
-
TjH
V UV
VH
11.0
0.2
Thermal characteristics( Tc=25°C)
Item
Junction to Case thermal resistance *9
Inverter
Brake
IGBT
FWD
IGBT
Case to fin thermal resistance with compound
Symbol
Rth(j-c)
Rth(j-c)
Rth(j-c)
Rth(c-f)
Min.
-
Typ.
0.05
Max.
0.34
0.61
0.59
-
Unit
°C/W
°C/W
°C/W
°C/W
Min.
Typ.
Max.
Unit
*9 For 1device, Case is under the device
Noise Immunity ( VDC=300V, Vcc=15V, Test Circuit Fig.5)
Item
Common mode rectangular noise
Common mode lightning surge
Condition
Pulse width 1µs, polarity ±,10minuets
Judge : no over-current, no miss operating
Rise time 1.2µs, Fall time 50µs
Interval 20s, 10 times
Judge : no over-current, no miss operating
±2.0
-
-
kV
±5.0
-
-
kV
Symbol
V DC
V CC
-
Min.
13.5
2.5
Typ.
15.0
-
Max.
800
16.5
3.0
Unit
V
V
Nm
Symbol
Wt
Min.
-
Typ.
270
Max.
-
Unit
g
Recommendable value
Item
DC Bus Voltage
Operating Supply Voltage of Pre-Driver
Screw torque (M5)
Weight
Item
Weight
Unit
A
A
µs
µs
°C
°C
V
V
7MBP75TEA120
IGBT-IPM
Vin(th)
Vin
On
Vin(th)
trr
90%
50%
Ic
90%
10%
toff
ton
Figure 1. Switching Time Waveform Definitions
)
on
on
Gate On
Vge (Inside IPM )
Fault (Inside IPM
off
off
/Vin
Gate Off
normal
alarm
/ALM
tALM > Max.
1
tALM >
t ALM 2ms(typ.)
3
Max.
2
Fault : Over-current,Over-heat or Under-voltage
Figure 2. Input/Output Timing Diagram
tsc
Ic
Ic
Ic
I ALM
I ALM
I ALM
Figure.4 Definition of tsc
Vcc
PP
IPM
IPM
20 k
DC
15V
VccU
20k
DC
15V
VinU
P
IPM
DC
300V
600V
GND
N
Ic
U
Figure 6. Switching Characteristics Test Circuit
SW1
GNDU
V
20k
DC
15V
+
+
Vin
HCPL
4504
CT
L
SW2
Earth
Vcc
VinX
GND
AC200V
AC400V
+
W
Icc
A
4700p
N
Cooling
Fin
Vcc
P
Noise
DC
15V
IPM
U
Vin
V
P.G
+8V
fsw
W
GND
N
Figure 5. Noise Test Circuit
Figure 7. Icc Test Circuit
7MBP75TEA120
IGBT-IPM
Block diagram
P
VccU
4
VinU
3
Pre- Driver
ALMU 2
RALM 1.5k
Vz
GNDU 1
VccV
8
VinV
7
U
Pre- Driver
ALMV 6
RALM 1.5k
Vz
GNDV 5
VccW
12
VinW
11
ALMW
10
V
Pre- Driver
RALM 1.5k
Vz
GNDW 9
Vcc
14
VinX
16
W
Pre- Driver
Vz
GND
VinY
13
17
Pre- Driver
Vz
VinZ
Pre-drivers include following functions
1.Amplifier for driver
18
Pre- Driver
Vz
2.Short circuit protection
3.Under voltage lockout circuit
B
VinDB
15
ALM
19
4.Over current protection
5.IGBT chip over heating protection
Pre- Driver
RALM 1.5k
Vz
N
Outline drawings, mm
MBCFM
Package Type : P622
Mass : 270g
7MBP75TEA120
IGBT-IPM
Characteristics
Control circuit characteristics (Representative)
Power supply current vs. Switching frequency
Tc=125°C (typ.)
Input signal threshold voltage
vs. Power supply voltage (typ.)
2.5
P-side
N-side
40
Vcc=17V
Vcc=15V
30
Vcc=13V
20
Vcc=17V
Vcc=15V
Vcc=13V
10
Input signal threshold voltage
: Vin(on),Vin(off) (V)
Power supply current : Icc (mA)
50
0
0
5
10
15
20
Switching frequency : fsw (kHz)
12
10
8
6
4
2
1
0.5
13
14
15
16
17
Power supply voltage : Vcc (V)
18
40
60
80
100
120
0.8
0.6
0.4
0.2
0
20
140
Junction temperature : Tj (°C)
40
60
80
100
120
Junction temperature : Tj (°C)
140
Over heating characteristics
TjOH,TjH vs. Vcc (typ.)
Alarm hold time vs. Power supply voltage (typ.)
200
Over heating protection : TjOH (°C)
OH hysterisis : TjH (°C)
3
2.5
Tc=100°C
2
Tc=25°C
1.5
1
0.5
0
12
} Vin(on)
1.5
1
Under voltage hysterisis : VH (V)
Under voltage : VUVT (V)
} Vin(off)
Under voltage hysterisis vs. Jnction temperature (typ.)
14
0
20
2
0
12
25
Under voltage vs. Junction temperature (typ.)
Alarm hold time : tALM (mSec)
Tj=25°C
Tj=125°C
13
14
15
16
17
Power supply voltage : Vcc (V)
18
TjOH
150
100
50
TjH
0
12
13
14
15
16
17
Power supply voltage : Vcc (V)
18
7MBP75TEA120
IGBT-IPM
Main circuit characteristics (Representative)
Collector current vs. Collector-Emitter voltage (typ.)
Tj=25°C(Chip)
Collector current vs. Collector-Emitter voltage (typ.)
Tj=25°C(Terminal)
150
Vcc=15V
125
Collector Current : Ic (A)
Collector Current : Ic (A)
150
Vcc=17V
100
Vcc=13V
75
50
25
100
Vcc=17V
Vcc=13V
75
50
0
0
0.5
1
1.5
2
2.5
3
3.5
Collector-Emitter voltage : Vce (V)
4
Collector current vs. Collector-Emitter voltage (typ.)
Tj=125°C(Chip)
0
0.5
1
1.5
2
2.5
3
3.5
Collector-Emitter voltage : Vce (V)
4
Collector current vs. Collector-Emitter voltage (typ.)
Tj=125°C(Terminal)
150
125
Collector Current : Ic (A)
150
Collector Current : Ic (A)
Vcc=15V
25
0
Vcc=15V
100
Vcc=17V
75
Vcc=13V
50
25
125
Vcc=15V
100
Vcc=17V
Vcc=13V
75
50
25
0
0
0
0.5
1
1.5
2
2.5
3
3.5
4
Collector-Emitter voltage : Vce (V)
0
0.5
1
1.5
2
2.5
3
3.5
Collector-Emitter voltage : Vce (V)
Forward current vs. Forward voltage (typ.)
(Chip)
Forward current vs. Forward voltage (typ.)
(Terminal)
150
150
125
125
Forward Current : If (A)
Forward Current : If (A)
125
25°C
100
125°C
75
50
25
4
25°C
100
125°C
75
50
25
0
0
0
0.5
1
1.5
Forward voltage : Vf (V)
2
2.5
0
0.5
1
1.5
Forward voltage : Vf (V)
2
2.5
7MBP75TEA120
IGBT-IPM
35
30
25
Eon
20
15
Eoff
10
5
Err
Switching Loss vs. Collector Current (typ.)
Edc=600V,Vcc=15V,Tj=125°C
Switching loss : Eon,Eoff,Err (mJ/cycle)
Switching loss : Eon,Eoff,Err (mJ/cycle)
Switching Loss vs. Collector Current (typ.)
Edc=600V,Vcc=15V,Tj=25° C
35
Eon
30
25
20
15
Eoff
10
5
Err
0
0
0
25
50
75
100
0
125
25
50
75
100
125
Collector current : Ic (A)
Collector current : Ic (A)
R e ve rs ed bias ed sa fe ope ra ting a re a
Vcc =15 V,Tj<=1 25° C(m in .)
Transient therm al resistance (max.)
Thermal res istance : Rth(j-c) (°C/W )
700
600
C ollecto r curre nt : Ic (A)
500
400
S CSO A
(non-repetitive pulse)
300
200
100
R BSO A
(R epe titive puls e)
1
FW D
IGBT
0.1
0.01
0
0
20 0
400
60 0
800
1 00 0
1200
0.001
140 0
0.01
C olle ctor -Emitte r voltage : V ce ( V)
1
Pulse w idth :Pw (sec )
Power derating for IGBT (max.)
(per device)
Power derating for FWD (max.)
(per device)
500
250
Collecter Power Dissipation : Pc (W)
Collecter Power Dissipation : Pc (W)
0.1
400
300
200
100
0
200
150
100
50
0
0
20
40
60
80
100 120 140 160
Case Temperature : Tc (°C)
0
20
40
60
80
100 120 140 160
Case Temperature : Tc (°C)
7MBP75TEA120
IGBT-IPM
S w itchin g time vs. Collector current (typ.)
Edc=600V,Vcc=15V, Tj=125° C
Switching time vs. Collector current (typ.)
E dc=6 00V ,V cc=15V ,Tj=25 ° C
10000
Switching time : ton,toff,tf (nSec )
Switching time : ton,toff,tf (nSec )
10000
toff
1000
ton
100
tf
ton
1000
100
tf
10
10
0
20
40
60
80
100
Collector current : Ic (A)
120
140
trr125°C
trr25°C
Irr125°C
100
Irr25°C
10
1
0
20
40
60
80 100
Forward current:IF(A)
0
20
40
60
80
100
Collector current : Ic (A)
Reverse recovery characteristics (typ.)
trr,Irr vs.IF
Reverse recovery current:Irr(A)
Reverse recovery time:trr(nsec)
toff
120
140
120
140
7MBP75TEA120
IGBT-IPM
Characteristics
Dynamic Brake Characteristics (Representative)
Collector current vs. Collector-Emitter voltage (typ.)
Tj=25°C
Collector current vs. Collector-Emitter voltage (typ.)
Tj=125°C
80
Vcc=15V
Collector Current : Ic (A)
Collector Current : Ic (A)
80
60
Vcc=17V
Vcc=13V
40
20
0
Vcc=15V
60
Vcc=17V
40
Vcc=13V
20
0
0
0.5
1
1.5
2
2.5
3
Collector-Emitter voltage : Vce (V)
3.5
0
0.5
1
1.5
2
2.5
3
Collector-Emitter voltage : Vce (V)
R e ve rs ed bias ed sa fe ope ra ting a re a
Vcc=1 5V, Tj<= 125 °C (min .)
Transient therm al resistance (m ax.)
35 0
1
IG BT
30 0
25 0
C ollecto r curre nt : Ic (A)
Thermal resistance : Rth(j-c) (°C/W )
3.5
0.1
20 0
SC SO A
(non-repe titive puls e)
15 0
10 0
50
R BSO A
(R epetitive puls e)
0
0.01
0
0.0 01
0.01
0.1
20 0
400
60 0
800
1 00 0
1
C ollector -Emitte r v oltage : V c e ( V)
Pulse w idth :Pw (sec)
Power derating for IGBT (max.)
(per device)
Collecter Power Dissipation : Pc (W)
250
200
150
100
50
0
0
20
40
60
80
100 120 140 160
Case Temperature : Tc (°C)
1200
140 0