6MBP50TEA120 1200V / 50A 6 in one-package Econo IPM series Features · Temperature protection provided by directly detecting the junction temperature of the IGBTs · Low power loss and soft switching · High performance and high reliability IGBT with overheating protection · Higher reliability because of a big decrease in number of parts in built-in control circuit Maximum ratings and characteristics Absolute maximum ratings(at Tc=25°C unless otherwise specified) Item Bus voltage DC Surge Short operating Collector-Emitter voltage *1 Collector current Inverter DC 1ms DC Collector power dissipation One transistor *3 Supply voltage of Pre-Driver *4 Input signal voltage *5 Input signal current Alarm signal voltage *6 Alarm signal current *7 Junction temperature Operating case temperature Storage temperature Solder temperature *8 Isolating voltage (Terminal to base, 50/60Hz sine wave 1min.) Screw torque Mounting (M5) Symbol Rating Min. Max. VDC VDC(surge) V SC VCES IC ICP -IC PC V CC Vin Iin VALM IALM Tj Topr Tstg Tsol Viso 0 0 400 0 -0.5 -0.5 -0.5 -20 -40 - 900 1000 800 1200 50 100 50 287 20 Vcc+0.5 3 Vcc 20 150 100 125 260 AC2500 3.5 Unit V V V V A A A W V V mA V mA °C °C °C °C V N·m Note *1 : Vces shall be applied to the input voltage between terminal P and U or ‚V or W, N and U or V or W *2 : 125°C/FWD Rth(j-c)/(Ic x VF MAX)=125/0.86/(50 x 2.0) x 100>100% *3 : Pc=125°C/IGBT Rth(j-c)=125/0.44=287W [Inverter] *4 : VCC shall be applied to the input voltage between terminal No.4 and 1, 8 and 5, 12 and 9, 14 and 13 *5 : Vin shall be applied to the input voltage between terminal No.3 and 1, 7 and 5, 11 and 9, 16,17,18 and 13. *6 :VALM shall be applied to the voltage between terminal No.2 and 1, No6 and 5, No10 and 9, No.19 and 13. *7 : IALMshall be applied to the input current to terminal No.2,6,10 and 19. *8 : Immersion time 10±1sec. 6MBP50TEA120 IGBT-IPM Electrical characteristics (at Tc=Tj=25°C, Vcc=15V unless otherwise specified.) Main circuit Inverter Item Collector current at off signal input Collector-Emitter saturation voltage Forward voltage of FWD Turn-on time Turn-off time Reverse recovery time Symbol ICES VCE(sat) VF ton toff trr Condition Min. Typ. Max. Unit 1.2 - 2.2 1.6 - 1.0 3.1 2.0 3.6 0.3 mA V VCE=1200V Vin terminal open. Ic=50A Terminal Chip -Ic=50A Terminal Chip VDC=600V,Tj=125°C IC=50A Fig.1, Fig.6 VDC=600V, IF=50A Fig.1, Fig.6 V µs Control circuit Item Supply current of P-line side pre-driver(one unit) Supply current of N-line side pre-driver Input signal threshold voltage (on/off) Symbol Iccp ICCN Vin(th) Input zener voltage Alarm signal hold time VZ tALM Current limit resistor RALM Condition Switching Frequency : 0 to 15kHz Tc=-20 to 125°C Fig.7 ON OFF Rin=20k ohm Tc=-20°C Fig.2 Tc=25°C Fig.2 Tc=125°C Fig.2 Alarm terminal Min. Typ. Max. 15 45 1.00 1.35 1.70 1.25 1.60 1.95 8.0 1.1 2.0 4.0 1425 1500 1575 Unit mA mA V V V ms ms ms ohm Protection Section ( Vcc=15V) Item Over Current Protection Level of Inverter circuit Over Current Protection Delay time SC Protection Delay time IGBT Chip Over Heating Protection Temperature Level Over Heating Protection Hysteresis Under Voltage Protection Level Under Voltage Protection Hysteresis Symbol IOC tDOC tSC TjOH Condition Tj=125°C Tj=125°C Tj=125°C Fig.4 Surface of IGBT chips Min. Typ. Max. 75 150 5 - 8 - A µs µs °C 20 0.5 12.5 - °C V V - TjH V UV VH 11.0 0.2 Thermal characteristics( Tc=25°C) Item Junction to Case thermal resistance *9 Inverter IGBT FWD Case to fin thermal resistance with compound Symbol Rth(j-c) Rth(j-c) Rth(c-f) Min. - Typ. 0.05 Max. 0.44 0.86 - Unit °C/W °C/W °C/W Min. Typ. Max. Unit *9 : (For 1 device, Case is under the device) Noise Immunity ( VDC=300V, Vcc=15V, Test Circuit Fig.5) Item Common mode rectangular noise Common mode lightning surge Condition Pulse width 1µs, polarity ±,10minuets Judge : no over-current, no miss operating Rise time 1.2µs, Fall time 50µs ±2.0 - - kV ±5.0 - - kV Symbol V DC V CC - Min. 13.5 2.5 Typ. 15.0 - Max. 800 16.5 3.0 Unit V V Nm Symbol Wt Min. - Typ. 270 Max. - Unit g Interval 20s, 10 times Judge : no over-current, no miss operating Recommendable value Item DC Bus Voltage Operating Supply Voltage of Pre-Driver Screw torque (M5) Weight Item Weight Unit 6MBP50TEA120 IGBT-IPM Vin(th) Vin On Vin(th) trr 90% 50% Ic 90% 10% toff ton Figure 1. Switching Time Waveform Definitions on on Gate On Vge (Inside IPM ) Fault (Inside IPM off off /Vin ) Gate Off normal alarm /ALM tALM > Max. 1 tALM > t ALM 2ms(typ.) 3 Max. 2 Fault : Over-current,Over-heat or Under-voltage Figure 2. Input/Output Timing Diagram tsc Ic Ic Ic I ALM I ALM I ALM Figure.4 Definition of tsc Vcc 20 k DC 15V 20k DC 15V VinU SW1 P IPM SW2 Earth GND DC 300V 600V + + N Ic Figure 6. Switching Characteristics Test Circuit U AC200V AC400V V DC 15V GND CT GNDU Vcc 20k VinX L Vin HCPL 4504 VccU PP IPM IPM + Icc A Vcc P W 4700p N Cooling Fin Noise DC 15V IPM U Vin V P.G +8V fsw W GND N Figure 5. Noise Test Circuit Figure 7. Icc Test Circuit 6MBP50TEA120 IGBT-IPM Block diagram P VccU 4 VinU 3 AL MU 2 Pre- Driver R ALM 1.5k GNDU 1 Vcc V 8 VinV 7 AL MV 6 U Pre- Driver R ALM 1.5k GNDV Vz 5 VccW 12 VinW 11 AL MW 10 V Pre- Driver R ALM 1.5k GNDW Vz Vz 9 Vcc 14 VinX 16 W Pre- Driver Vz GND VinY 13 17 Pre- Driver Vz VinZ Pre-drivers include following functions 1.Amplifier for driver 2.Short circuit protection 3.Under voltage lockout circuit 18 Pre- Driver Vz NC VinDB 15 AL M 19 4.Over current protection 5.IGBT chip over heating protection B NC R ALM 1.5k N Outline drawings, mm MBCFM Package type : P622 Dimensions in mm Mass : 270g 6MBP50TEA120 IGBT-IPM Characteristics Control circuit characteristics (Representative) Input signal threshold voltage vs. Power supply voltage (typ.) Power supply current vs. Switching frequency Tc=125°C (typ.) 2.5 P-side N-side 40 Vcc=17V Vcc=15V Vcc=13V 30 20 Vcc=17V Vcc=15V Vcc=13V 10 Input signal threshold voltage : Vin(on),Vin(off) (V) Power supply current : Icc (mA) 50 0 0 5 10 15 20 Switching frequency : fsw (kHz) 12 10 8 6 4 2 1 0.5 13 14 15 16 17 Power supply voltage : Vcc (V) 18 40 60 80 100 120 0.8 0.6 0.4 0.2 0 20 140 Junction temperature : Tj (°C) 40 60 80 100 120 Junction temperature : Tj (°C) 140 Over heating characteristics TjOH,TjH vs. Vcc (typ.) Alarm hold time vs. Power supply voltage (typ.) 200 Over heating protection : TjOH (°C) OH hysterisis : TjH (°C) 3 2.5 Tc=100°C 2 Tc=25°C 1.5 1 0.5 0 12 } Vin(on) 1.5 1 Under voltage hysterisis : VH (V) Under voltage : VUVT (V) } Vin(off) Under voltage hysterisis vs. Jnction temperature (typ.) 14 0 20 2 0 12 25 Under voltage vs. Junction temperature (typ.) Alarm hold time : tALM (mSec) Tj=25°C Tj=125°C 13 14 15 16 17 Power supply voltage : Vcc (V) 18 TjOH 150 100 50 TjH 0 12 13 14 15 16 17 Power supply voltage : Vcc (V) 18 6MBP50TEA120 IGBT-IPM Main circuit characteristics (Representative) Collector current vs. Collector-Emitter voltage (typ.) Tj=25°C / Chip Collector current vs. Collector-Emitter voltage (typ.) Tj=25°C / Terminal 100 Vcc=15V 80 Collector Current : Ic (A) Collector Current : Ic (A) 100 Vcc=17V 60 Vcc=13V 40 20 60 Vcc=17V Vcc=13V 40 0 0 0.5 1 1.5 2 2.5 3 Collector-Emitter voltage : Vce (V) 3.5 Collector current vs. Collector-Emitter voltage (typ.) Tj=125°C / Chip 0 0.5 1 1.5 2 2.5 3 Collector-Emitter voltage : Vce (V) 3.5 Collector current vs. Collector-Emitter voltage (typ.) Tj=125°C / Terminal 100 80 Collector Current : Ic (A) 100 Collector Current : Ic (A) Vcc=15V 20 0 Vcc=15V Vcc=17V 60 Vcc=13V 40 20 80 Vcc=15V Vcc=17V 60 Vcc=13V 40 20 0 0 0 0.5 1 1.5 2 2.5 3 3.5 Collector-Emitter voltage : Vce (V) 0 0.5 1 1.5 2 2.5 3 Collector-Emitter voltage : Vce (V) Forward current vs. Forward voltage (typ.) Chip Forward current vs. Forward voltage (typ.) Terminal 100 100 80 80 25°C Forward Current : If (A) Forward Current : If (A) 80 125°C 60 40 25°C 60 20 0 0 0.5 1 1.5 Forward voltage : Vf (V) 2 2.5 125°C 40 20 0 3.5 0 0.5 1 1.5 Forward voltage : Vf (V) 2 2.5 6MBP50TEA120 IGBT-IPM 20 15 Eon 10 Eoff 5 Switching Loss vs. Collector Current (typ.) Edc=600V,Vcc=15V,Tj=125°C Switching loss : Eon,Eoff,Err (mJ/cycle) Switching loss : Eon,Eoff,Err (mJ/cycle) Switching Loss vs. Collector Current (typ.) Edc=600V,Vcc=15V,Tj=25° C Err 20 Eon 15 10 Eoff 5 Err 0 0 0 20 40 60 80 0 100 20 60 80 100 Collector current : Ic (A) Collector current : Ic (A) R e ve rs ed bias ed sa fe ope ra ting a re a Vc c=1 5V, Tj<= 125 °C (m in .) Transient therm al resistance (m ax.) 1 Thermal resistance : Rth(j-c) (°C/W ) 70 0 60 0 50 0 C ollecto r curre nt : Ic (A) 40 40 0 SC SO A (non-repe titive puls e) 30 0 20 0 10 0 FW D IG BT 0.1 R BSO A (R epe titive puls e) 0.01 0 0 20 0 400 60 0 800 1 00 0 1200 0.0 01 140 0 0.01 Colle ctor- Emitter voltage : V ce (V) 1 Pulse w idth :Pw (sec) Power derating for IG BT (m ax.) (per dev ice) Power derating for FW D (max.) (per dev ice) 500 200 Collecter Power Dissipation : Pc (W ) Collecter Power Dissipation : Pc (W ) 0.1 400 300 200 100 0 150 100 50 0 0 20 40 60 80 100 120 Case Tem perature : Tc (°C) 140 160 0 20 40 60 80 100 120 Case Tem perature : Tc (°C) 140 160 6MBP50TEA120 IGBT-IPM Switching tim e vs. Collector current (typ.) Edc=600V,Vcc=15V,Tj=25° C 10000 Switching time : ton,toff,tf (nSec ) Switching time : ton,toff,tf (nSec ) 10000 toff 1000 ton 100 tf 10 toff ton 1000 tf 100 10 0 10 20 30 40 50 60 Collector current : Ic (A) 70 80 trr125°C trr25°C 100 Irr125°C Irr25°C 10 1 0 10 20 30 40 50 60 Forward current:IF(A) 0 10 20 30 40 50 60 Collector current : Ic (A) Reverse recovery characteristics trr,Irr vs.IF (typ.) Reverse recovery current:Irr(A) Reverse recovery time:trr(nsec) Switching tim e vs. Collector current (typ.) Edc=600V,Vcc=15V,Tj= 125° C 70 80 70 80