FDPF12N50UT N-Channel UniFETTM Ultra FRFETTM MOSFET 500 V, 10 A, 800 m Features Description • RDS(on) = 650 m (Typ.) @ VGS = 10 V, ID = 5 A UniFETTM MOSFET is Fairchild Semiconductor®’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. UniFET Ultra FRFETTM MOSFET has much superior body diode reverse recovery performance. Its trr is less than 50nsec and the reverse dv/dt immunity is 20V/nsec while normal planar MOSFETs have over 200nsec and 4.5V/nsec respectively. Therefore UniFET Ultra FRFET MOSFET can remove additional component and improve system reliability in certain applications that require performance improvement of the MOSFET’s body diode. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts. • Low Gate Charge (Typ. 21 nC) • Low Crss (Typ. 11 pF) • 100% Avalanche Tested • Improved dv/dt Capability • RoHS Compliant Applications • LCD/LED/PDP TV • Lighting • Uninterruptible Power Supply D G G D S TO-220F S MOSFET Maximum Ratings TC = 25oC unless otherwise noted* Symbol VDSS Drain to Source Voltage Parameter VGSS Gate to Source Voltage ID Drain Current - Continuous (TC = 25oC) Unit V ±30 V 10* - Continuous (TC = 100oC) - Pulsed FDPF12N50UT 500 6* A IDM Drain Current EAS Single Pulsed Avalanche Energy IAR Avalanche Current (Note 1) 10 A EAR Repetitive Avalanche Energy (Note 1) 16.5 mJ dv/dt Peak Diode Recovery dv/dt 20 V/ns 40* A (Note 2) 456 mJ (Note 3) (TC = 25oC) PD Power Dissipation TJ, TSTG Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds TL (Note 1) - Derate above 25oC 42 W 0.3 W/oC -55 to +150 o C 300 oC FDPF12N50UT Unit *Drain current limited by maximum junction temperature Thermal Characteristics Symbol Parameter RJC Thermal Resistance, Junction to Case, Max. 3.0 RJA Thermal Resistance, Junction to Ambient, Max. 62.5 ©2012 Fairchild Semiconductor Corporation FDPF12N50UT Rev.C1 1 oC/W www.fairchildsemi.com FDPF12N50UT N-Channel UniFETTM Ultra FRFETTM MOSFET March 2013 Device Marking FDPF12N50UT Device FDPF12N50UT Package TO-220F Reel Size - Tape Width - Quantity 50 Electrical Characteristics Symbol Parameter Test Conditions Min. Typ. Max. Unit ID = 250A, VGS = 0V, TJ = 25oC 500 - - V ID = 250A, Referenced to 25oC - 0.7 - V/oC VDS = 500V, VGS = 0V Off Characteristics BVDSS BVDSS TJ Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSS Gate to Body Leakage Current - - 25 VDS = 400V, TC = 125oC - - 250 VGS = ±30V, VDS = 0V - - ±100 A nA On Characteristics VGS(th) RDS(on) Gate Threshold Voltage VGS = VDS, ID = 250A 3.0 - 5.0 V Static Drain to Source On Resistance VGS = 10V, ID = 5A - 0.65 0.8 gFS Forward Transconductance VDS = 40V, ID = 5A - 11 - S VDS = 25V, VGS = 0V f = 1MHz - 1050 1395 pF - 140 190 pF - 11 17 pF - 21 30 nC - 6 - nC - 9 - nC Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg(tot) Total Gate Charge at 10V Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge VDS = 400V, ID = 10A VGS = 10V (Note 4) Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time VDD = 250V, ID = 10A RG = 25 (Note 4) - 35 80 ns - 45 100 ns - 60 130 ns - 35 80 ns Drain-Source Diode Characteristics IS Maximum Continuous Drain to Source Diode Forward Current - - 10 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 40 A VSD Drain to Source Diode Forward Voltage VGS = 0V, ISD = 10A - - 1.6 V trr Reverse Recovery Time - 65 - ns Qrr Reverse Recovery Charge VGS = 0V, ISD = 10A dIF/dt = 100A/s - 0.1 - C Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 9mH, IAS = 10A, VDD = 50V, RG = 25, Starting TJ = 25C 3. ISD 10A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C 4. Essentially Independent of Operating Temperature Typical Characteristics ©2012 Fairchild Semiconductor Corporation FDPF12N50UT Rev.C1 2 www.fairchildsemi.com FDPF12N50UT N-Channel UniFETTM Ultra FRFETTM MOSFET Package Marking and Ordering Information TC = 25oC unless otherwise noted Figure 1. On-Region Characteristics VGS = 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V 10 Figure 2. Transfer Characteristics 30 ID,Drain Current[A] ID,Drain Current[A] 30 10 o 150 C o 25 C *Notes: 1. 250s Pulse Test *Notes: 1. VDS = 20V 2. 250s Pulse Test o 1 2. TC = 25 C 1 10 VDS,Drain-Source Voltage[V] 1 4.0 20 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 7.0 100 1.2 IS, Reverse Drain Current [A] RDS(ON) [], Drain-Source On-Resistance 5.0 5.5 6.0 6.5 VGS,Gate-Source Voltage[V] Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 1.4 1.0 VGS = 10V VGS = 20V 0.8 0.6 o 150 C o 25 C 10 *Notes: 1. VGS = 0V o *Note: TJ = 25 C 0 5 10 15 ID, Drain Current [A] 20 1 0.0 25 Figure 5. Capacitance Characteristics Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 1500 Ciss *Note: 1. VGS = 0V 2. f = 1MHz 1000 Coss 500 Crss 0 0.1 1 10 VDS, Drain-Source Voltage [V] ©2012 Fairchild Semiconductor Corporation FDPF12N50UT Rev.C1 2. 250s Pulse Test 0.5 1.0 1.5 2.0 VSD, Body Diode Forward Voltage [V] 2.5 Figure 6. Gate Charge Characteristics 10 VGS, Gate-Source Voltage [V] 2000 Capacitances [pF] 4.5 6 4 2 0 30 3 VDS = 100V VDS = 250V VDS = 400V 8 *Note: ID = 10A 0 5 10 15 20 Qg, Total Gate Charge [nC] 25 www.fairchildsemi.com FDPF12N50UT N-Channel UniFETTM Ultra FRFETTM MOSFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. Maximum Safe Operating Area - FDPF12N50UT 80 1.1 1.0 20s 100s 10 ID, Drain Current [A] BVDSS, [Normalized] Drain-Source Breakdown Voltage 1.2 1ms 10ms 1 Operation in This Area is Limited by R DS(on) DC *Notes: 0.1 0.9 o *Notes: 1. VGS = 0V 2. ID = 250A 0.8 -100 -50 0 50 100 150 o TJ, Junction Temperature [ C] 1. TC = 25 C o 0.01 200 2. TJ = 150 C 3. Single Pulse 1 10 100 VDS, Drain-Source Voltage [V] 800 Figure 9. Maximum Drain Current vs. Case Temperature - FDPF12N50UT 12 ID, Drain Current [A] 10 8 6 4 2 0 25 50 75 100 125 o TC, Case Temperature [ C] 150 Figure 10. Transient Thermal Response Curve - FDPF12N50UT Thermal Response [ZJC] 5 1 0.5 0.2 0.1 0.1 0.05 PDM 0.02 t1 0.01 0.01 Single pulse 1E-3 -5 10 ©2012 Fairchild Semiconductor Corporation FDPF12N50UT Rev.C1 t2 *Notes: o 1. ZJC(t) = 3.0 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZJC(t) -4 10 -3 -2 -1 0 10 10 10 10 Rectangular Pulse Duration [sec] 4 1 10 2 10 www.fairchildsemi.com FDPF12N50UT N-Channel UniFETTM Ultra FRFETTM MOSFET Typical Performance Characteristics (Continued) FDPF12N50UT N-Channel UniFETTM Ultra FRFETTM MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms ©2012 Fairchild Semiconductor Corporation FDPF12N50UT Rev.C1 5 www.fairchildsemi.com FDPF12N50UT N-Channel UniFETTM Ultra FRFETTM MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VDD VSD Body Diode Forward Voltage Drop ©2012 Fairchild Semiconductor Corporation FDPF12N50UT Rev.C1 6 www.fairchildsemi.com FDPF12N50UT N-Channel UniFETTM Ultra FRFETTM MOSFET Package Dimensions TO-220M03 Dimensions in Millimeters ©2012 Fairchild Semiconductor Corporation FDPF12N50UT Rev.C1 7 www.fairchildsemi.com tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I64 ©2012 Fairchild Semiconductor Corporation FDPF12N50UT Rev.C1 8 www.fairchildsemi.com FDPF12N50UT N-Channel UniFETTM Ultra FRFETTM MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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