RHRD660S9A_F085 Data Sheet July 2011 6A, 600V Hyperfast Diodes Features The RHRD660S9A_F085 is hyperfast diodes with soft recovery characteristics (trr < 30ns). It has half the recovery time of ultrafast diodes and are silicon nitride passivated ion-implanted epitaxial planar construction. • Hyperfast with Soft Recovery. . . . . . . . . . . . . . . . . . <30ns • Operating Temperature . . . . . . . . . . . . . . . . . . . . . . 175oC • Reverse Voltage Up To . . . . . . . . . . . . . . . . . . . . . . . . 600V This device is intended for use as freewheeling/ clamping diodes and rectifiers in a variety of switching power supplies and other power switching applications. Its low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors. • Avalanche Energy Rated Formerly developmental type TA49057. • General Purpose PART NUMBER Applications • Switching Power Supplies • Power Switching Circuits Packaging Ordering Information RHRD660S9A_F085 • Planar Construction PACKAGE BRAND TO-252 RHR660 JEDEC STYLE TO-252 CATHODE (FLANGE) CATHODE Symbol ANODE K A Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VRRM Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VRWM DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VR Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IF(AV) (TC = 152oC) Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFRM (Square Wave, 20kHz) Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFSM (Halfwave, 1 Phase, 60Hz) Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD Avalanche Energy (See Figures 10 and 11) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAVL Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TSTG, TJ Maximum Lead Temperature for Soldering (Leads at 0.063 in. (1.6mm) from case for 10s) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, see Tech Brief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TPKG ©2011 Fairchild Semiconductor Corporation RHRD660S9A_F085 600 600 600 6 UNITS V V V A 12 A 60 A 50 10 -65 to 175 W mJ oC 300 260 oC oC RHRD660S9A_F085 RHRD660S9A_F085 Electrical Specifications SYMBOL TC = 25oC, Unless Otherwise Specified TEST CONDITION MIN TYP MAX UNITS IF = 6A - - 2.1 V IF = 6A, TC = 150oC - - 1.7 V VR = 600V - - 100 µA VR = 600V, TC = 150oC - - 500 µA IF = 1A, dIF/dt = 200A/µs - - 30 ns IF = 6A, dIF/dt = 200A/µs - - 35 ns ta IF = 6A, dIF/dt = 200A/µs - 16 - ns tb IF = 6A, dIF/dt = 200A/µs - 8.5 - ns QRR IF = 6A, dIF/dt = 200A/µs - 45 - nC VR = 10V, IF = 0A - 20 - pF - - 3 oC/W VF IR trr CJ RθJC DEFINITIONS VF = Instantaneous forward voltage (pw = 300µs, D = 2%). IR = Instantaneous reverse current. trr = Reverse recovery time (See Figure 9), summation of ta + tb. ta = Time to reach peak reverse current (See Figure 9). tb = Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 9). QRR = Reverse recovery charge. CJ = Junction capacitance. RθJC = Thermal resistance junction to case. pw = Pulse width. D = Duty cycle. Typical Performance Curves 30 1000 IR , REVERSE CURRENT (µA) IF , FORWARD CURRENT (A) 175oC 10 175oC 100oC 25oC 1 0.5 0 0.5 1 1.5 2 2.5 VF , FORWARD VOLTAGE (V) FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE ©2011 Fairchild Semiconductor Corporation 3 100 100oC 10 1 0.1 25oC 0.01 0 100 200 300 400 500 600 VR , REVERSE VOLTAGE (V) FIGURE 2. REVERSE CURRENT vs REVERSE RHRD660S9A_F085 RHRD66 RHRD660S9A_F085 Typical Performance Curves (Continued) 30 50 TC = 25oC, dIF/dt = 200A/µs TC = 100oC, dIF/dt = 200A/µs t, RECOVERY TIMES (ns) t, RECOVERY TIMES (ns) 25 trr 20 15 ta 10 tb 5 0 0.5 1 40 trr 30 ta 20 tb 10 0 0.5 6 1 IF , FORWARD CURRENT (A) IF , FORWARD CURRENT (A) FIGURE 3. trr, ta AND tb CURVES vs FORWARD CURRENT FIGURE 4. trr, ta AND tb CURVES vs FORWARD CURRENT IF(AV) , AVERAGE FORWARD CURRENT (A) 75 t, RECOVERY TIMES (ns) TC = 175oC, dIF/dt = 200A/µs 60 trr 45 30 ta tb 15 0 0.5 1 6 6 6 5 DC 4 SQ. WAVE 3 2 1 0 140 145 150 155 160 165 170 175 TC , CASE TEMPERATURE (oC) IF , FORWARD CURRENT (A) FIGURE 5. trr, ta AND tb CURVES vs FORWARD CURRENT FIGURE 6. CURRENT DERATING CURVE CJ , JUNCTION CAPACITANCE (pF) 50 40 30 20 10 0 0 50 100 150 200 VR , REVERSE VOLTAGE (V) FIGURE 7. JUNCTION CAPACITANCE vs REVERSE VOLTAGE ©2011 Fairchild Semiconductor Corporation RHRD660S9A_F085 RHRD660S9A_F085 Test Circuits and Waveforms VGE AMPLITUDE AND RG CONTROL dIF/dt t1 AND t2 CONTROL IF L DUT CURRENT SENSE RG IF + VGE - IGBT t1 VDD dIF trr dt ta tb 0 0.25 IRM t2 IRM FIGURE 8. trr TEST CIRCUIT FIGURE 9. trr WAVEFORMS AND DEFINITIONS IMAX = 1A L = 20mH R < 0.1Ω EAVL = 1/2LI2 [VR(AVL) /(VR(AVL) - VDD)] Q1 = IGBT (BVCES > DUT VR(AVL)) VAVL L CURRENT SENSE R + VDD IL IL I V Q1 VDD DUT t0 FIGURE 10. AVALANCHE ENERGY TEST CIRCUIT ©2011 Fairchild Semiconductor Corporation t1 t2 t FIGURE 11. AVALANCHE CURRENT AND VOLTAGE WAVEFORMS RHRD660S9A_F085 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. FPS™ Power-SPM™ AccuPower™ The Power Franchise® The Right Technology for Your Success™ F-PFS™ PowerTrench® Auto-SPM™ ® PowerXS™ FRFET® AX-CAP™* Programmable Active Droop™ Global Power ResourceSM BitSiC® ® Build it Now™ Green FPS™ QFET TinyBoost™ QS™ CorePLUS™ Green FPS™ e-Series™ TinyBuck™ Quiet Series™ CorePOWER™ Gmax™ TinyCalc™ RapidConfigure™ CROSSVOLT™ GTO™ TinyLogic® ™ CTL™ IntelliMAX™ TINYOPTO™ Current Transfer Logic™ ISOPLANAR™ TinyPower™ Saving our world, 1mW/W/kW at a time™ DEUXPEED® MegaBuck™ TinyPWM™ Dual Cool™ SignalWise™ MICROCOUPLER™ TinyWire™ EcoSPARK® SmartMax™ MicroFET™ TranSiC® EfficentMax™ SMART START™ MicroPak™ TriFault Detect™ ® ESBC™ SPM MicroPak2™ TRUECURRENT®* STEALTH™ MillerDrive™ ® μSerDes™ ® SuperFET MotionMax™ SuperSOT™-3 Motion-SPM™ Fairchild® SuperSOT™-6 mWSaver™ Fairchild Semiconductor® UHC® SuperSOT™-8 OptiHiT™ FACT Quiet Series™ ® Ultra FRFET™ SupreMOS® OPTOLOGIC FACT® UniFET™ OPTOPLANAR® SyncFET™ FAST® ® VCX™ Sync-Lock™ FastvCore™ VisualMax™ ®* FETBench™ XS™ FlashWriter® * PDP SPM™ tm tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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