MMBD4448 High Conductance Fast Diode Features Description • 350 mW Power Dissipation Package • High Breakdown Voltage, Fast Switching Speed • Typical Capacitance < 1.5 pF. The high breakdown voltage, fast switching speed and high forward conductance of the MMBD4448 diode packaged in a SOT-23 surface mount package makes it desirable a general-purpose diode. Connection Diagram 3 3 3 RAB 2 1 1 2 1 2NC SOT-23 Ordering Information Part Number Top Mark Package Packing Method MMBD4448 RAB SOT-23 3L Tape and Reel Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. Symbol VRRM Parameter Maximum Repetitive Reverse Voltage Value Unit 100 V Working Inverse Voltage 75 V IO Average Rectified Current 200 mA IF DC Forward Current 600 mA if Recurrent Peak Forward Current 700 mA WIV Pulse Width = 1.0 second 1.0 Pulse Width = 1.0 microsecond 2.0 IFSM Peak Forward Surge Current TSTG Storage Temperature Range -55 to +150 °C Operating Junction Temperature -55 to +150 °C TJ © 1997 Fairchild Semiconductor Corporation MMBD4448 Rev. 1.1.0 A www.fairchildsemi.com MMBD4448 — High Conductance Fast Diode November 2014 Values are at TA = 25°C unless otherwise noted. Symbol PD RθJA Parameter Value Unit Total Power Dissipation at TA = 25°C 350 mW Linear Derating Factor from TA = 25°C 2.8 mW/°C Thermal Resistance, Junction-to-Ambient 357 °C/W Electrical Characteristics Values are at TA = 25°C unless otherwise noted. Symbol Parameter VR Breakdown Voltage IR Reverse Current Conditions Min. IR = 5.0 μA 75 IR = 100 μA 100 Max. Unit V VR = 20 V 25 nA VR = 20 V, TA = 150°C 50 μA VR = 75 V 5.0 μA 720 mV IF = 5 mA 620 VF Forward Voltage IF = 100 mA 1.0 V CT Capacitance VR = 0 V, f = 1.0 MHz 2.0 pF TRR Reverse Recovery Time IF = 10 mA, IR = 10 mA, IRR = 1.0 mA, RL = 100 Ω 4.0 ns Peak Forward Recovery Voltage IF = 50 mA, Peak Square Wave 2.5 V VFRM © 1997 Fairchild Semiconductor Corporation MMBD4448 Rev. 1.1.0 www.fairchildsemi.com 2 MMBD4448 — High Conductance Fast Diode Thermal Characteristics 150 140 130 120 110 1 Ta= 25 ° C 300 Reverse Current, IR [nA] Reverse Voltage, V R [V] Ta= 25 °C 2 3 5 10 20 Reverse Current, IR [μA] 30 50 250 200 150 100 50 0 100 10 20 30 50 70 100 Reverse Voltage, VR [V] Figure 2. Reverse Current vs. Reverse Voltage IR - 10 to 100 V Figure 1. Reverse Voltage vs. Reverse Current BV - 1.0 to 100 μA Ta= 25 °C Ta= 25 ° C 700 Forward Voltage, VF [mV] Forward Voltage, VF [mV] 450 400 350 300 650 600 550 500 250 450 1 2 3 5 10 20 30 50 100 0.1 0.2 0.3 0.5 1 2 3 5 10 Forward Current, IF [mA] Forward Current, IF [ μA] Figure 3. Forward Voltage vs. Forward Current VF - 1.0 to 100 μA Figure 4. Forward Voltage vs. Forward Current VF - 0.1 to 10 mA 1.3 Ta= 25 ° C Ta= 25 ° C Total Capacitance [pF] Forward Voltage, VF [V] 1.4 1.2 1.0 0.8 0.6 10 20 30 50 100 200 300 1.1 1.0 500 0 Forw ard C urrent, I F [m A ] 2 4 6 8 10 12 14 R everse V oltage [V] Figure 5. Forward Voltage vs. Forward Current VF - 10 to 800 mA © 1997 Fairchild Semiconductor Corporation MMBD4448 Rev. 1.1.0 1.2 Figure 6. Total Capacitance vs. Reverse Voltage www.fairchildsemi.com 3 MMBD4448 — High Conductance Fast Diode Typical Performance Characteristics 400 Ta= 25 °C 3.5 300 3.0 Current [mA] Reverse Recovery Time [nS] 4.0 2.5 2.0 IF 200 (AV ) -A VE 100 RA GE RE CT IF IE 1.5 1.0 DC UR RE NT -m A 0 10 20 30 40 50 60 0 Reverse Current [mA] 50 100 150 Ambient Temperature, T A [ ° C] Figure 7. Reverse Recovery Time vs. Reverse Current TRR - IR 10 mA to 60 mA Figure 8. Average Rectified Current (IF(AV)) vs. Ambient Temperature (TA) Power Dissipation, PD [mW ] 500 400 300 SOT-23 Pkg 200 100 0 0 50 100 150 200 Average T em perature, I O [ ° C ] Figure 9. Power Derating Curve © 1997 Fairchild Semiconductor Corporation MMBD4448 Rev. 1.1.0 www.fairchildsemi.com 4 MMBD4448 — High Conductance Fast Diode Typical Performance Characteristics (Continued) MMBD4448 — High Conductance Fast Diode Physical Dimensions 0.95 2.92±0.20 3 1.40 1.30+0.20 -0.15 1 2.20 2 0.60 0.37 (0.29) 0.95 0.20 1.00 A B 1.90 1.90 LAND PATTERN RECOMMENDATION SEE DETAIL A 1.20 MAX 0.10 0.00 (0.93) 0.10 C C 2.40±0.30 NOTES: UNLESS OTHERWISE SPECIFIED GAGE PLANE 0.23 0.08 A) REFERENCE JEDEC REGISTRATION TO-236, VARIATION AB, ISSUE H. B) ALL DIMENSIONS ARE IN MILLIMETERS. C) DIMENSIONS ARE INCLUSIVE OF BURRS, MOLD FLASH AND TIE BAR EXTRUSIONS. D) DIMENSIONING AND TOLERANCING PER ASME Y14.5M - 1994. E) DRAWING FILE NAME: MA03DREV10 0.25 0.20 MIN (0.55) SEATING PLANE SCALE: 2X Figure 10. 3-LEAD, SOT23, JEDEC TO-236, LOW PROFILE © 1997 Fairchild Semiconductor Corporation MMBD4448 Rev. 1.1.0 www.fairchildsemi.com 5 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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