STS5N150 N-CHANNEL 150V - 0.045 Ω - 5A SO-8 LOW GATE CHARGE STripFET™ POWER MOSFET TARGET DATA TYPE STS5N150 ■ ■ ■ VDSS RDS(on) ID 150 V <0.06 Ω 5A TYPICAL RDS(on) = 0.045 Ω EXTREMELY HIGH dv/dt CAPABILITY EXTREMELY LOW GATE CHARGE DESCRIPTION This MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced highefficiency, high-frequency isolated DC-DC converters for Telecom and Computer applications. It is also intended for any applications with low gate drive requirements. APPLICATIONS ■ HIGH-EFFICIENCY DC-DC CONVERTERS ■ UPS AND MOTOR CONTROL SO-8 INTERNAL SCHEMATIC DIAGRAM Ordering Information SALES TYPE STS5N150 MARKING S5N150 PACKAGE SO-8 PACKAGING TAPE & REEL ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS Parameter Value Unit Drain-source Voltage (VGS = 0) 150 V Drain-gate Voltage (RGS = 20 kΩ) 150 V Gate- source Voltage ± 20 V 5 A ID Drain Current (continuous) at TC = 25°C ID Drain Current (continuous) at TC = 100°C 3 A Drain Current (pulsed) 20 A Ptot Total Dissipation at TC = 25°C 2.5 W Tstg Storage Temperature -55 to 150 °C IDM(•) Tj Operating Junction Temperature (•) Pulse width limited by safe operating area. June 2003 This is preliminary information on a new product forseen to be developped. Details are subject to change without notice 1/6 STS5N150 THERMAL DATA Rthj-amb (*)Thermal Max Resistance Junction-ambient (*) When Mounted on 1 inch2 FR-4 board, 2 oz of Cu and t [ 50 °C/W 10 sec. ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified) OFF Symbol Parameter Test Conditions Drain-source Breakdown Voltage ID = 250 µA, VGS = 0 IDSS Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating VDS = Max Rating TC = 125°C IGSS Gate-body Leakage Current (VDS = 0) VGS = ± 20 V V(BR)DSS Min. Typ. Max. 150 Unit V 1 10 µA µA ±100 nA Max. Unit ON (*) Symbol Parameter Test Conditions VGS(th) Gate Threshold Voltage VDS = VGS RDS(on) Static Drain-source On Resistance VGS = 10 V ID = 250 µA Min. Typ. 2 ID = 2.5 A V 0.045 0.06 Ω Typ. Max. Unit DYNAMIC Symbol 2/6 Parameter Test Conditions gfs (*) Forward Transconductance VDS = 75 V Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25V, f = 1 MHz, VGS = 0 ID = 5 A Min. TBD S TBD TBD TBD pF pF pF STS5N150 ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) tr Turn-on Delay Time Rise Time ID = 2.5 A VDD = 75 V RG = 4.7 Ω VGS = 10 V (Resistive Load, Figure 1) TBD TBD Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD= 120V ID= 5A VGS= 10V TBD TBD TBD 28 nC nC nC Typ. Max. Unit (see test circuit, Figure 2) ns ns SWITCHING OFF Symbol td(off) tf Parameter Turn-off Delay Time Fall Time Test Conditions Min. ID = 2.5 A VDD = 75 V RG = 4.7Ω, VGS = 10 V (Resistive Load, Figure 1) TBD TBD ns ns SOURCE DRAIN DIODE Symbol Parameter ISD ISDM (•) Source-drain Current Source-drain Current (pulsed) VSD (*) Forward On Voltage ISD = 5 A Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current di/dt = 100A/µs ISD = 5 A VDD = 50 V Tj = 150°C (see test circuit, Figure 3) trr Qrr IRRM Test Conditions Min. Typ. VGS = 0 TBD TBD TBD Max. Unit 5 20 A A 1.2 V ns nC A (*)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. (•)Pulse width limited by safe operating area. 3/6 STS5N150 Fig. 1: Switching Times Test Circuits For Resistive Load Fig. 3: Test Circuit For Diode Recovery Behaviour 4/6 Fig. 2: Gate Charge test Circuit STS5N150 SO-8 MECHANICAL DATA mm DIM. MIN. TYP. A a1 MAX. MIN. TYP. 1.75 0.1 0.003 0.009 1.65 0.65 MAX. 0.068 0.25 a2 a3 inch 0.064 0.85 0.025 0.033 b 0.35 0.48 0.013 0.018 b1 0.19 0.25 0.007 0.010 C 0.25 0.5 0.010 0.019 c1 45 (typ.) D 4.8 5.0 0.188 0.196 E 5.8 6.2 0.228 0.244 e 1.27 0.050 e3 3.81 0.150 F 3.8 4.0 0.14 0.157 L 0.4 1.27 0.015 0.050 M S 0.6 0.023 8 (max.) 0016023 5/6 STS5N150 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is registered trademark of STMicroelectronics 2003 STMicroelectronics - All Rights Reserved All other names are the property of their respective owners. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 6/6