STN7NF10 N-CHANNEL 100V - 0.055 Ω - 5A SOT-223 LOW GATE CHARGE STripFET™ II POWER MOSFET TYPE STN7NF10 ■ ■ VDSS RDS(on) ID 100 V < 0.065 Ω 5A TYPICAL RDS(on) = 0.055 Ω APPLICATION ORIENTED CHARACTERIZATION 2 1 2 3 SOT-223 DESCRIPTION This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency isolated DC-DC converters for Telecom and Computer application. It is also intended for any application with low gate charge drive requirements. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS HIGH-EFFICIENCY DC-DC CONVERTERS ■ UPS AND MOTOR CONTROL ■ ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS Parameter Value Unit Drain-source Voltage (VGS = 0) 100 V Drain-gate Voltage (RGS = 20 kΩ) 100 V Gate- source Voltage ±20 V ID Drain Current (continuous) at TC = 25°C 5 A ID Drain Current (continuous) at TC = 100°C 3.4 A IDM () PTOT Drain Current (pulsed) 20 A Total Dissipation at TC = 25°C 3.3 W 0.026 W/°C –55 to 150 °C Derating Factor Tstg Tj Storage Temperature Operating Junction Temperature (● ) Pulse width limited by safe operating area December 2002 1/8 STN7NF10 THERMAL DATA Rthj-PCB Thermal Resistance Junction-PCB Max(*) 38 °C/W Rthj-PCB Thermal Resistance Junction-PCB Max(**) 100 °C/W Maximum Lead Temperature For Soldering Purpose (1.6 mm from case,for 10s) 260 °C Tl Note: (*) When mounted on 1 in2 FR-4 BOARD,2 oz Cu, t<10s. Note: (**) When mounted on minimum footprint. ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol V(BR)DSS IDSS IGSS Parameter Test Conditions Min. Typ. Max. 100 Unit Drain-source Breakdown Voltage ID = 250 µA, VGS = 0 V Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating 1 µA VDS = Max Rating, TC = 125 °C 10 µA Gate-body Leakage Current (VDS = 0) VGS = ±20V ±100 nA Max. Unit ON (1) Symbol Parameter Test Conditions VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250µA RDS(on) Static Drain-source On Resistance VGS = 10V, ID = 1.5 A Min. 2 Typ. 3 4 V 0.055 0.065 Ω Typ. Max. Unit DYNAMIC Symbol gfs (1) 2/8 Parameter Test Conditions Min. Forward Transconductance VDS = 15 V , ID = 1.5 A 12 S VDS = 25 V, f = 1 MHz, VGS = 0 Ciss Input Capacitance 870 pF Coss Output Capacitance 125 pF Crss Reverse Transfer Capacitance 52 pF STN7NF10 ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON Symbol td(on) tr Qg Qgs Qgd Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions Min. VDD = 50 V, ID = 12 A RG = 4.7Ω VGS = 10 V (see test circuit, Figure 3) VDD = 80 V, ID = 24 A, VGS = 10 V Typ. Max. Unit 58 ns 45 ns 30 6 10 41 nC nC nC Typ. Max. Unit SWITCHING OFF Symbol td(off) tf Parameter Turn-off-Delay Time Fall Time Test Conditions Min. VDD = 50 V, ID = 12 A, RG = 4.7Ω, VGS = 10V (see test circuit, Figure 3) 49 17 ns ns SOURCE DRAIN DIODE Symbol ISD ISDM (1) VSD (2) trr Qrr IRRM Parameter Test Conditions Max. Unit Source-drain Current 5 A Source-drain Current (pulsed) 20 A Forward On Voltage ISD = 5 A, VGS = 0 Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 5 A, di/dt = 100A/µs, VDD = 30 V, Tj = 150°C (see test circuit, Figure 5) Min. Typ. 1.3 100 375 7.5 V ns nC A Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. 3/8 STN7NF10 Safe Operating Area Output Characteristics Transconductance 4/8 Thermal Impedence Transfer Characteristics Static Drain-source On Resistance STN7NF10 Gate Charge vs Gate-source Voltage Normalized Gate Thereshold Voltage vs Temp. Capacitance Variations Normalized On Resistance vs Temperature Source-drain Diode Forward Characteristics 5/8 STN7NF10 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/8 STN7NF10 SOT-223 MECHANICAL DATA mm DIM. MIN. TYP. A inch MAX. MIN. TYP. 1.80 MAX. 0.071 B 0.60 0.70 0.80 0.024 0.027 0.031 B1 2.90 3.00 3.10 0.114 0.118 0.122 c 0.24 0.26 0.32 0.009 0.010 0.013 D 6.30 6.50 6.70 0.248 0.256 0.264 e 2.30 0.090 e1 4.60 0.181 E 3.30 3.50 3.70 0.130 0.138 0.146 H 6.70 7.00 7.30 0.264 0.276 0.287 10o V A1 10o 0.02 P008B 7/8 STN7NF10 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. © The ST logo is a registered trademark of STMicroelectronics © 2002 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. © http://www.st.com 8/8