STMICROELECTRONICS STN7NF10

STN7NF10
N-CHANNEL 100V - 0.055 Ω - 5A SOT-223
LOW GATE CHARGE STripFET™ II POWER MOSFET
TYPE
STN7NF10
■
■
VDSS
RDS(on)
ID
100 V
< 0.065 Ω
5A
TYPICAL RDS(on) = 0.055 Ω
APPLICATION ORIENTED
CHARACTERIZATION
2
1
2
3
SOT-223
DESCRIPTION
This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and
gate charge. It is therefore suitable as primary
switch in advanced high-efficiency isolated DC-DC
converters for Telecom and Computer application. It
is also intended for any application with low gate
charge drive requirements.
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
HIGH-EFFICIENCY DC-DC CONVERTERS
■ UPS AND MOTOR CONTROL
■
ABSOLUTE MAXIMUM RATINGS
Symbol
VDS
VDGR
VGS
Parameter
Value
Unit
Drain-source Voltage (VGS = 0)
100
V
Drain-gate Voltage (RGS = 20 kΩ)
100
V
Gate- source Voltage
±20
V
ID
Drain Current (continuous) at TC = 25°C
5
A
ID
Drain Current (continuous) at TC = 100°C
3.4
A
IDM ()
PTOT
Drain Current (pulsed)
20
A
Total Dissipation at TC = 25°C
3.3
W
0.026
W/°C
–55 to 150
°C
Derating Factor
Tstg
Tj
Storage Temperature
Operating Junction Temperature
(● ) Pulse width limited by safe operating area
December 2002
1/8
STN7NF10
THERMAL DATA
Rthj-PCB
Thermal Resistance Junction-PCB Max(*)
38
°C/W
Rthj-PCB
Thermal Resistance Junction-PCB Max(**)
100
°C/W
Maximum Lead Temperature For Soldering Purpose
(1.6 mm from case,for 10s)
260
°C
Tl
Note: (*) When mounted on 1 in2 FR-4 BOARD,2 oz Cu, t<10s.
Note: (**) When mounted on minimum footprint.
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
V(BR)DSS
IDSS
IGSS
Parameter
Test Conditions
Min.
Typ.
Max.
100
Unit
Drain-source
Breakdown Voltage
ID = 250 µA, VGS = 0
V
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
1
µA
VDS = Max Rating, TC = 125 °C
10
µA
Gate-body Leakage
Current (VDS = 0)
VGS = ±20V
±100
nA
Max.
Unit
ON (1)
Symbol
Parameter
Test Conditions
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250µA
RDS(on)
Static Drain-source On
Resistance
VGS = 10V, ID = 1.5 A
Min.
2
Typ.
3
4
V
0.055
0.065
Ω
Typ.
Max.
Unit
DYNAMIC
Symbol
gfs (1)
2/8
Parameter
Test Conditions
Min.
Forward Transconductance
VDS = 15 V , ID = 1.5 A
12
S
VDS = 25 V, f = 1 MHz, VGS = 0
Ciss
Input Capacitance
870
pF
Coss
Output Capacitance
125
pF
Crss
Reverse Transfer
Capacitance
52
pF
STN7NF10
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol
td(on)
tr
Qg
Qgs
Qgd
Parameter
Turn-on Delay Time
Rise Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Test Conditions
Min.
VDD = 50 V, ID = 12 A
RG = 4.7Ω VGS = 10 V
(see test circuit, Figure 3)
VDD = 80 V, ID = 24 A,
VGS = 10 V
Typ.
Max.
Unit
58
ns
45
ns
30
6
10
41
nC
nC
nC
Typ.
Max.
Unit
SWITCHING OFF
Symbol
td(off)
tf
Parameter
Turn-off-Delay Time
Fall Time
Test Conditions
Min.
VDD = 50 V, ID = 12 A,
RG = 4.7Ω, VGS = 10V
(see test circuit, Figure 3)
49
17
ns
ns
SOURCE DRAIN DIODE
Symbol
ISD
ISDM (1)
VSD (2)
trr
Qrr
IRRM
Parameter
Test Conditions
Max.
Unit
Source-drain Current
5
A
Source-drain Current (pulsed)
20
A
Forward On Voltage
ISD = 5 A, VGS = 0
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 5 A, di/dt = 100A/µs,
VDD = 30 V, Tj = 150°C
(see test circuit, Figure 5)
Min.
Typ.
1.3
100
375
7.5
V
ns
nC
A
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
3/8
STN7NF10
Safe Operating Area
Output Characteristics
Transconductance
4/8
Thermal Impedence
Transfer Characteristics
Static Drain-source On Resistance
STN7NF10
Gate Charge vs Gate-source Voltage
Normalized Gate Thereshold Voltage vs Temp.
Capacitance Variations
Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
5/8
STN7NF10
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuit For
Resistive Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
6/8
STN7NF10
SOT-223 MECHANICAL DATA
mm
DIM.
MIN.
TYP.
A
inch
MAX.
MIN.
TYP.
1.80
MAX.
0.071
B
0.60
0.70
0.80
0.024
0.027
0.031
B1
2.90
3.00
3.10
0.114
0.118
0.122
c
0.24
0.26
0.32
0.009
0.010
0.013
D
6.30
6.50
6.70
0.248
0.256
0.264
e
2.30
0.090
e1
4.60
0.181
E
3.30
3.50
3.70
0.130
0.138
0.146
H
6.70
7.00
7.30
0.264
0.276
0.287
10o
V
A1
10o
0.02
P008B
7/8
STN7NF10
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or
systems without express written approval of STMicroelectronics.
© The ST logo is a registered trademark of STMicroelectronics
© 2002 STMicroelectronics - Printed in Italy - All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco
Singapore - Spain - Sweden - Switzerland - United Kingdom - United States.
© http://www.st.com
8/8